公开(公告)号：US6018187A

公开(公告)日：2000-01-25

申请号：US174718

申请日：1998-10-19

申请人： Jeremy A. Theil ,  Min Cao ,  Dietrich W. Vook ,  Frederick A. Perner ,  Xin Sun ,  Shawming Ma ,  Gary W. Ray

发明人： Jeremy A. Theil ,  Min Cao ,  Dietrich W. Vook ,  Frederick A. Perner ,  Xin Sun ,  Shawming Ma ,  Gary W. Ray

IPC分类号： H04N5/335 ,  H01L27/146 ,  H01L31/02 ,  H01L31/00 ,  H01L31/075 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L27/14632 ,  H01L27/14643 ,  H01L31/02002

摘要： An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. Each photo sensor includes an individual pixel electrode. An I-layer is formed over all of the pixel electrodes. A transparent electrode is formed over the I-layer. An inner surface of the transparent electrode is electrically connected to the I-layer and the interconnect structure.

摘要翻译： 有源像素传感器。 有源像素传感器包括衬底，与衬底相邻的互连结构以及与互连结构相邻的至少一个光电传感器。 每个光传感器包括单独的像素电极。 在所有像素电极上形成I层。 在I层上形成透明电极。 透明电极的内表面与I层和互连结构电连接。

公开(公告)号：US6114739A

公开(公告)日：2000-09-05

申请号：US174717

申请日：1998-10-19

申请人： Jeremy A. Theil ,  Min Cao ,  Dietrich W. Vook ,  Frederick A. Perner ,  Xin Sun ,  Shawming Ma ,  Gary W. Ray ,  Wayne M. Greene ,  Kit M. Cham ,  Steven A. Lupi

发明人： Jeremy A. Theil ,  Min Cao ,  Dietrich W. Vook ,  Frederick A. Perner ,  Xin Sun ,  Shawming Ma ,  Gary W. Ray ,  Wayne M. Greene ,  Kit M. Cham ,  Steven A. Lupi

IPC分类号： H01L27/146 ,  H01L31/02 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14643 ,  H01L27/14632 ,  H01L31/02005

摘要： An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. At least one photo sensor is formed adjacent to the interconnect structure. Each photo sensor includes a pixel electrode which includes a patterned doped semiconductor layer. An I-layer is formed adjacent to the patterned doped semiconductor layer. A transparent electrode is formed adjacent to the I-layer. A method of forming the active pixel sensor includes forming an interconnect structure over a substrate. Next, a doped semiconductor layer is deposited over the interconnect structure. The doped semiconductor layer is etched forming pixel electrode. An I-layer is deposited over the pixel electrodes. Finally, a transparent conductive layer is deposited over the I-layer.

摘要翻译： 有源像素传感器。 有源像素传感器包括衬底，与衬底相邻的互连结构以及与互连结构相邻的至少一个光电传感器。 在互连结构附近形成至少一个光电传感器。 每个光传感器包括包括图案化掺杂半导体层的像素电极。 在图案化掺杂半导体层附近形成I层。 形成与I层相邻的透明电极。 形成有源像素传感器的方法包括在衬底上形成互连结构。 接下来，在互连结构上沉积掺杂半导体层。 蚀刻形成像素电极的掺杂半导体层。 I层沉积在像素电极上。 最后，透明导电层沉积在I层上。

公开(公告)号：US06586812B1

公开(公告)日：2003-07-01

申请号：US09290443

申请日：1999-04-13

申请人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

发明人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

IPC分类号： H01L3120

CPC分类号： H01L27/14601 ,  H01L27/14665

摘要： An array of image sensors that includes ion implantation regions that provide physical isolation between the pixel electrode regions. The physical isolation reduces coupling and cross-talk between the image sensors. The array of isolated image sensors can be formed by a simple fabrication process.

摘要翻译： 包括在像素电极区域之间提供物理隔离的离子注入区域的图像传感器阵列。 物理隔离减少了图像传感器之间的耦合和串扰。 隔离图像传感器的阵列可以通过简单的制造工艺形成。

公开(公告)号：US06759724B2

公开(公告)日：2004-07-06

申请号：US10349447

申请日：2003-01-22

申请人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

发明人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

IPC分类号： H01L3120

CPC分类号： H01L27/14601 ,  H01L27/14665

摘要： An image sensor. The image sensor array includes a substrate. An interconnect structure is formed adjacent to the substrate. An amorphous silicon electrode layer is adjacent to the interconnect structure. The amorphous silicon electrode layer includes electrode ion implantation regions between pixel electrode regions. The pixel electrode regions define cathodes of an array of image sensors. The electrode ion implantation regions provide physical isolation between the pixel electrode regions. The cathodes are electrically connected to the interconnect structure. An amorphous silicon I-layer is adjacent to the amorphous silicon electrode layer. The amorphous silicon I-layer forms an inner layer of each of the image sensors. A transparent electrode layer is formed adjacent to the image sensors. An inner surface of the transparent electrode is electrically connected to anodes of the image sensors and the interconnect structure. The amorphous silicon I-layer region can further include I-layer ion implantation regions that provide physical isolation between the inner layers of the image sensors. The I-layer ion implantation regions align with the electrode ion implantation regions. An amorphous silicon P-layer can be formed adjacent to the amorphous silicon I-layer. The amorphous silicon P-layer forms an outer layer of each of the image sensors. The amorphous silicon P-layer region can include P-layer ion implantation regions that provide physical isolation between the outer layers of the image sensors.

摘要翻译： 图像传感器。 图像传感器阵列包括基板。 在衬底附近形成互连结构。 非晶硅电极层与互连结构相邻。 非晶硅电极层包括像素电极区域之间的电极离子注入区域。 像素电极区域限定图像传感器阵列的阴极。 电极离子注入区域提供像素电极区域之间的物理隔离。 阴极电连接到互连结构。 非晶硅I层与非晶硅电极层相邻。 非晶硅I层形成每个图像传感器的内层。 形成与图像传感器相邻的透明电极层。 透明电极的内表面电连接到图像传感器和互连结构的阳极。 非晶硅I层区域还可以包括在图像传感器的内层之间提供物理隔离的I层离子注入区域。 I层离子注入区域与电极离子注入区域对准。 非晶硅P层可以与非晶硅I层相邻地形成。 非晶硅P层形成每个图像传感器的外层。 非晶硅P层区域可以包括在图像传感器的外层之间提供物理隔离的P层离子注入区域。

公开(公告)号：US07038242B2

公开(公告)日：2006-05-02

申请号：US09795608

申请日：2001-02-28

申请人： Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook ,  Min Cao

发明人： Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook ,  Min Cao

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L31/0376 ,  H01L27/14681 ,  Y02E10/50

摘要： An array of light-sensitive sensors utilizes bipolar phototransistors that are formed of multiple amorphous semiconductor layers, such as silicon. In the preferred embodiment, the bipolar transistors are open base devices. In this preferred embodiment, the holes that are generated by reception of incoming photons to a particular open base phototransistor provide current injection to the base region of the phototransistor. The collector region is preferably an intrinsic amorphous silicon layer. The phototransistors may be operated in either an integrating mode in which bipolar current is integrated or a static mode in which a light-responsive voltage is monitored.

公开(公告)号：US06111300A

公开(公告)日：2000-08-29

申请号：US203445

申请日：1998-12-01

申请人： Min Cao ,  Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook

发明人： Min Cao ,  Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook

IPC分类号： H01L31/10 ,  H01L27/146 ,  H01L31/00 ,  H01L31/075 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L27/14609 ,  H01L27/14647

摘要： A color detection active pixel sensor. The color detection active pixel sensor includes a substrate. A diode is electrically connected to a first doped region of the substrate. The diode conducts charge when the diode receives photons having a first range of wavelengths. The substrate includes a second doped region. The second doped region conducts charge when receiving photons having a second range of wavelengths. The photons having the second range of wavelengths passing through the diode substantially undetected by the diode. The substrate can include a doped well within the substrate. The doped well conducts charge when receiving photons having a third range of wavelengths. The photons having the third range of wavelengths pass through the diode substantially undetected by the diode.

摘要翻译： 颜色检测有源像素传感器。 颜色检测有源像素传感器包括基板。 二极管电连接到衬底的第一掺杂区域。 当二极管接收具有第一波长范围的光子时，二极管导通电荷。 衬底包括第二掺杂区域。 当接收具有第二波长范围的光子时，第二掺杂区域传导电荷。 具有基本上不被二极管检测到的通过二极管的第二波长范围的光子。 衬底可以包括衬底内的掺杂阱。 当接收具有第三波长范围的光子时，掺杂阱导电。 具有第三波长范围的光子通过基本上不被二极管检测的二极管。

公开(公告)号：US06759262B2

公开(公告)日：2004-07-06

申请号：US10032023

申请日：2001-12-18

申请人： Jeremy A. Theil ,  Dietrich W. Vook ,  Homayoon Haddad

发明人： Jeremy A. Theil ,  Dietrich W. Vook ,  Homayoon Haddad

IPC分类号： H01L2100

CPC分类号： H01L31/105 ,  H01L27/14609 ,  H01L27/1463

摘要： An image sensor and method of manufacture therefor includes a substrate having pixel control circuitry. Dielectric layers on the substrate include interconnects in contact with the pixel control circuitry and with pixel electrodes. An intrinsic layer is over the pixel electrodes and has a gap provided between the pixel electrodes. An intrinsic-layer covering layer is over the intrinsic layer and a transparent contact layer over the intrinsic-layer covering and the interconnects. The intrinsic, intrinsic-layer covering, and transparent contact layer interact in different combinations to provide a pixel isolation system for the image sensor.

摘要翻译： 图像传感器及其制造方法包括具有像素控制电路的基板。 衬底上的介电层包括与像素控制电路和像素电极接触的互连。 本征层在像素电极之上，并且在像素电极之间具有间隙。 本征层覆盖层在本征层之上，并且在本征层覆盖物和互连之上形成透明接触层。 固有的本征层覆盖层和透明接触层以不同的组合相互作用以提供用于图像传感器的像素隔离系统。

公开(公告)号：US06229191B1

公开(公告)日：2001-05-08

申请号：US09443960

申请日：1999-11-19

申请人： Min Cao ,  Wayne M. Greene ,  Dietrich W. Vook

发明人： Min Cao ,  Wayne M. Greene ,  Dietrich W. Vook

IPC分类号： H01L310376

CPC分类号： H01L27/14643 ,  H01L27/14632

摘要： An array of active pixel sensors. The array of active pixel sensors includes a substrate that includes electronic circuitry. An interconnect structure is formed adjacent to the substrate. The interconnect structure includes a plurality of conductive vias. A plurality of conductive guard rings are formed adjacent to the interconnect structure. Each conductive guard ring is electrically connected to the substrate through at least one of the conductive vias. A plurality of photo diode sensors are formed adjacent to the interconnect structure. Each photo diode sensor is surrounded by at least one of the conductive guard rings. Each photo diode sensor includes a pixel electrode. The pixel electrode is electrically connected to the substrate through a corresponding conductive via. An I-layer is formed adjacent to the pixel electrode. The array of active pixel sensors further includes a transparent conductive layer formed adjacent to the photo diode sensors. An inner surface of the conductive layer is physically connected to the photo diode sensors, and electrically connected to the substrate through a conductive via. The electronic circuitry biases the photo diode sensors and controls a guard voltage potential of the conductive guard rings.

摘要翻译： 一组有源像素传感器。 有源像素传感器的阵列包括包括电子电路的衬底。 在衬底附近形成互连结构。 互连结构包括多个导电通孔。 在互连结构附近形成多个导电保护环。 每个导电保护环通过至少一个导电通孔与衬底电连接。 在互连结构附近形成多个光电二极管传感器。 每个光电二极管传感器被至少一个导电保护环包围。 每个光电二极管传感器包括像素电极。 像素电极通过相应的导电通孔电连接到衬底。 在像素电极附近形成I层。 有源像素传感器阵列还包括邻近光电二极管传感器形成的透明导电层。 导电层的内表面物理地连接到光电二极管传感器，并且通过导电通孔与衬底电连接。 电子电路偏置光电二极管传感器并控制导电保护环的保护电压电位。

公开(公告)号：US06940061B2

公开(公告)日：2005-09-06

申请号：US10086125

申请日：2002-02-27

申请人： Izhak Baharav ,  Philippe Longere ,  Dietrich W. Vook

发明人： Izhak Baharav ,  Philippe Longere ,  Dietrich W. Vook

IPC分类号： H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N9/04 ,  G01J3/50

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H04N9/045 ,  H04N2209/046 ,  H04N2209/047

摘要： A two-color photo-detector capable of sensing two colors at a single photo-detector location is provided having a lower photo-detector element resident in the bulk silicon and an upper photo-detector element elevated above the lower photo-detector element. The color sensitivity of each of the photo-detector elements is determined according to the absorption curve of the upper photo-detector element, the thickness of the upper photo-detector element and the color filter array, if any. The elevated upper photo-detector element overlies the circuitry needed for both the upper photo-detector element and the lower photo-detector element. In order to accurately sample color within an array of two-color photo-detectors without a color filter array, two different thicknesses for the upper photo-detector elements of adjacent two-color photo-detectors are used. Therefore, each pair of two-color photo-detectors within the array senses four different colors (i.e., blue and the complement of blue and red and the complement of red). To process the raw color values for compression and storage, a simple color-conversion matrix can be used on a 2×2 block of two-color photo-detectors to convert the four colors (eight color values) to a new color space, such as YCbCr (4:1:1), without traditional demosaicing neighborhood operations.

摘要翻译： 提供了能够在单个光检测器位置感测两种颜色的双色光电检测器，其具有驻留在体硅中的下部光检测器元件和在下部光检测器元件上方升高的上部光检测器元件。 根据上部光检测元件的吸收曲线，上部光检测元件和滤色器阵列的厚度（如果有的话）来确定每个光检测器元件的颜色灵敏度。 升高的上部光电检测器元件覆盖上部光电检测器元件和下部光检测器元件所需的电路。 为了在没有滤色器阵列的双色光电检测器的阵列内准确地采样颜色，使用了相邻双色光检测器的上部光检测器元件的两个不同厚度。 因此，阵列内的每对双色光电检测器都会感测到四种不同的颜色（即蓝色和蓝色和红色的补码以及红色的补码）。 为了处理压缩和存储的原始颜色值，可以在2x2块双色光电检测器上使用简单的颜色转换矩阵，将四种颜色（八种颜色值）转换为新的颜色空间，如YCbCr （4：1：1），没有传统的去马赛克社区行动。

公开(公告)号：US5420454A

公开(公告)日：1995-05-30

申请号：US269992

申请日：1994-07-01

申请人： Dietrich W. Vook ,  Hsin H. Wang

发明人： Dietrich W. Vook ,  Hsin H. Wang

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/72

CPC分类号： H01L29/66287 ,  H01L29/1004

摘要： In a bipolar device, selective epitaxial silicon provides an improved intrinsic-extrinsic base link. A trench physically separates an intrinsic and extrinsic base portion. The trench includes sidewalls having a thin oxide layer formed thereon. The bottom of the trench is exposed during processing. A shallow link between the intrinsic-extrinsic regions of a bipolar transistor base is formed by depositing a heavily boron doped layer of silicon on the exposed portion of the trench. During subsequent processing, including rapid thermal anneal, there is some boron out-diffusion which forms a shallow diffused intrinsic-extrinsic base link.

摘要翻译： 在双极器件中，选择性外延硅提供了改进的本征 - 外在基极连接。 沟槽物理地分离固有和非本征基部分。 沟槽包括其上形成有薄氧化物层的侧壁。 沟槽的底部在加工过程中暴露。 通过在沟槽的暴露部分上沉积重硼掺杂的硅层来形成双极晶体管基极的本征 - 非本征区域之间的浅连接。 在随后的处理过程中，包括快速热退火，有一些硼外扩散形成了浅扩散的固有 - 外在基极。