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12 条记录 (耗时 0.021 秒)

    Showerhead with branched gas receiving channel and apparatus including the same for use in manufacturing semiconductor substrates
    1.
    发明申请
    Showerhead with branched gas receiving channel and apparatus including the same for use in manufacturing semiconductor substrates 审中-公开
    具有分支气体接收通道的喷头及其制造方法，用于制造半导体基板

    公开(公告)号：US20060011298A1

    公开(公告)日：2006-01-19

    申请号：US11177890

    申请日：2005-07-08

    申请人： Ji-Eun Lim ,  Byoung-Jae Bae ,  Young-Bae Choi

    发明人： Ji-Eun Lim ,  Byoung-Jae Bae ,  Young-Bae Choi

    IPC分类号： C23F1/00 ,  C23C16/00

    CPC分类号： C23C16/45514 ,  C23C16/45565 ,  C23C16/45574

    摘要： Showerheads for use in an apparatus for manufacturing a semiconductor substrate include an injection plate defining a bottom face of a gas receiving space in the showerhead and a gas receiving channel extending within the injection plate. A plurality of exhausting holes in the injection plate are coupled to the gas receiving channel. The exhausting holes are configured to exhaust gas from the gas receiving channel to the bottom face of the gas receiving space. A plurality of channels extend through the injection plate from the bottom face of the gas receiving space configured to flow gas from the bottom face of the gas receiving space out of the space.

    摘要翻译： 用于制造半导体衬底的装置的喷头包括限定喷淋头中的气体接收空间的底面的注射板和在注射板内延伸的气体接收通道。 喷射板中的多个排气孔联接到气体接收通道。 排气孔被构造成将气体从气体接收通道排出到气体接收空间的底面。 多个通道从气体容纳空间的底面延伸穿过注射板，该气体接收空间配置成使气体从气体接收空间的底面流出空间。

    Deposition apparatus and related methods including a pulse fluid supplier having a buffer
    2.
    发明申请
    Deposition apparatus and related methods including a pulse fluid supplier having a buffer 审中-公开
    沉积装置及相关方法，包括具有缓冲器的脉冲流体供应器

    公开(公告)号：US20050155551A1

    公开(公告)日：2005-07-21

    申请号：US10952323

    申请日：2004-09-28

    申请人： Byoung-Jae Bae ,  Young-Bae Choi ,  Ji-Eun Lim

    发明人： Byoung-Jae Bae ,  Young-Bae Choi ,  Ji-Eun Lim

    IPC分类号： C23C16/455 ,  C23C16/448 ,  C23C16/00

    CPC分类号： C23C16/4481

    摘要： A deposition apparatus for depositing a predetermined material on a semiconductor substrate includes a chamber configured to perform a deposition process and a source gas supplier having a pulse fluid supplier configured to cyclically supply a source of a source gas to the chamber. The pulse fluid supplier includes a buffer configured to provide a space in which a fluid is received and a body including a first supply port connected to a source supplier, a second supply port connected to a carrier gas supply pipe, and a discharge port connected to a fluid supply pipe. The fluid supply pipe is configured such that fluid in the buffer flows through the fluid supply pipe to the chamber. The pulse fluid supplier includes a controller configured to selectively allow or prevent a source fluid supplied by the first supply port and a carrier gas supplied by the second supply port to flow to/from the buffer, and to allow or prevent a fluid in the buffer to flow to/from the fluid supply pipe.

    摘要翻译： 用于在半导体衬底上沉积预定材料的沉积装置包括构造成执行沉积工艺的腔室和具有脉冲流体供应器的源气体供应器，所述脉冲流体供应器构造成将源气体源循环地供应到腔室。 脉冲流体供给器包括缓冲器，该缓冲器被构造成提供容纳流体的空间和包括连接到源供应器的第一供应端口的主体，连接到载气供应管的第二供应端口和连接到 流体供应管。 流体供给管构造成使得缓冲液中的流体流过流体供应管至腔室。 脉冲流体供应器包括：控制器，其被配置为选择性地允许或防止由第一供应口供应的源流体和由第二供应口提供的载气流向缓冲器或从缓冲器流出，并允许或防止缓冲器中的流体 流向/从流体供应管流出。

    Method for depositing ferroelectric thin films using a mixed oxidant gas
    4.
    发明申请
    Method for depositing ferroelectric thin films using a mixed oxidant gas 审中-公开
    使用混合氧化剂气体沉积铁电薄膜的方法

    公开(公告)号：US20070058415A1

    公开(公告)日：2007-03-15

    申请号：US11520623

    申请日：2006-09-14

    申请人： Dong-Hyun Im ,  Byoung-Jae Bae ,  Ji-Eun Lim ,  Dong-Chul Yoo ,  Yeon-Kyu Jung

    发明人： Dong-Hyun Im ,  Byoung-Jae Bae ,  Ji-Eun Lim ,  Dong-Chul Yoo ,  Yeon-Kyu Jung

    IPC分类号： G11C11/22

    CPC分类号： H01L28/55 ,  C23C16/409 ,  H01L27/11502 ,  H01L28/65

    摘要： Disclosed are methods of forming ferroelectric material layers introducing a plurality of metallorganic source compounds into the reaction chamber, the source compounds being supplied in an appropriate ratio for forming the ferroelectric material. These metallorganic source compounds are, in turn, reacted with a NyOx/O2 oxidant gas mixture in which the NyOxcomponent(s) represents at least 50 volume percent of the oxidant gas. This mixture of metallorganic source compounds and oxidant gas mixture(s) are maintained at a deposition temperature and deposition pressure within the reaction chamber suitable for causing a reaction between the metallorganic source compounds and the oxidant gas for a deposition period sufficient to form the ferroelectric material layer. The resulting ferroelectric material layers exhibit improved uniformity, for example, near the interface with the bottom electrode.

    摘要翻译： 公开了形成将多个金属有机源化合物引入反应室的铁电材料层的方法，以适当的比例供给源化合物以形成铁电体材料。 这些金属有机源化合物又与N 2 O 2 O 2 / O 2 O 2氧化剂气体混合物反应，其中N“ y O x分量代表氧化剂气体的至少50体积％。 金属有机源化合物和氧化剂气体混合物的混合物保持在反应室内的沉积温度和沉积压力，适于在金属有机源化合物和氧化剂气体之间产生足以形成铁电材料的沉积时间 层。 所得到的铁电材料层表现出改善的均匀性，例如在与底部电极的界面附近。

    Phase change memory device including resistant material
    5.
    发明授权
    Phase change memory device including resistant material 失效
    相变记忆装置，包括耐磨材料

    公开(公告)号：US07759667B2

    公开(公告)日：2010-07-20

    申请号：US11762801

    申请日：2007-06-14

    申请人： Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-il Lee ,  Hye-Young Park ,  Ji-Eun Lim

    发明人： Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-il Lee ,  Hye-Young Park ,  Ji-Eun Lim

    IPC分类号： H01L29/04

    CPC分类号： H01L45/148 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1691

    摘要： A phase change memory device includes a lower electrode provided on a substrate, an interlayer insulating layer including a contact hole exposing the lower electrode, and covering the substrate, a resistant material pattern filling the contact hole, a phase change pattern interposed between the resistant material pattern and the interlayer insulating layer, and extending between the resistant material pattern and the lower electrode, wherein the resistant material pattern has a higher resistance than the phase change pattern, and an upper electrode in contact with the phase change pattern, the upper electrode being electrically connected to the lower electrode through the phase change pattern.

    摘要翻译： 相变存储器件包括设置在基板上的下电极，包括暴露下电极的接触孔并覆盖基板的层间绝缘层，填充接触孔的电阻材料图案，插入在电阻材料之间的相变图案 图案和层间绝缘层，并且在电阻材料图案和下电极之间延伸，其中电阻材料图案具有比相变图案更高的电阻，以及与相变图案接触的上电极，上电极为 通过相变图案电连接到下电极。

    High-density probe array
    6.
    发明授权
    High-density probe array 失效
    高密度探头阵列

    公开(公告)号：US07583095B2

    公开(公告)日：2009-09-01

    申请号：US11464571

    申请日：2006-08-15

    申请人： Dong-Chul Yoo ,  Byoung-Jae Bae ,  Jang-Eun Heo ,  Ji-Eun Lim ,  Dong-Hyun Im

    发明人： Dong-Chul Yoo ,  Byoung-Jae Bae ,  Jang-Eun Heo ,  Ji-Eun Lim ,  Dong-Hyun Im

    IPC分类号： G01R31/02

    CPC分类号： G01R3/00 ,  Y10T29/49151

    摘要： A probe array may be fabricated by forming probes arranged on a sacrificial substrate, forming a probe substrate above the probes, and removing the sacrificial substrate. In one embodiment, first probes may be two-dimensionally formed in row and column directions on a sacrificial substrate. Second probes may be formed between the first probes arranged in the row direction such that a distance between the first and second probes is smaller than the resolution limit in a lithography process. A probe substrate may be formed on the sacrificial substrate having the first and second probes, and the sacrificial substrate may be removed.

    摘要翻译： 可以通过形成设置在牺牲衬底上的探针，在探针上方形成探针衬底，以及去除牺牲衬底来制造探针阵列。 在一个实施例中，第一探针可以在牺牲衬底上在行和列方向上二维地形成。 可以在布置在行方向上的第一探针之间形成第二探针，使得第一和第二探针之间的距离小于光刻工艺中的分辨率极限。 可以在具有第一和第二探针的牺牲衬底上形成探针衬底，并且可以去除牺牲衬底。

    Apparatus for manufacturing semiconductor device
    7.
    发明申请
    Apparatus for manufacturing semiconductor device 审中-公开
    半导体器件制造装置

    公开(公告)号：US20060174827A1

    公开(公告)日：2006-08-10

    申请号：US11329451

    申请日：2006-01-10

    申请人： Byoung-Jae Bae ,  Ji-Eun Lim ,  Yeon-Kyu Jung

    发明人： Byoung-Jae Bae ,  Ji-Eun Lim ,  Yeon-Kyu Jung

    IPC分类号： C30B11/00

    CPC分类号： C23C16/45589 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45591 ,  C30B35/00 ,  Y10T117/10

    摘要： A deposition apparatus is provided that has a reaction-chamber, a wafer support, gas supply line, an ejection unit and a diffusion unit. The ejection unit includes a bottom portion spaced apart from a top wall of the reaction chamber to form a space. The diffusion unit is positioned below the gas supply line and includes a planar portion having upwardly extending flanges forming an upwardly open space below the gas supply line. Gas flowing from the gas supply line flows into the upwardly open space and ascends the upwardly extending flanges to diffuse the gas into the space.

    摘要翻译： 提供一种沉积设备，其具有反应室，晶片支撑件，气体供应管线，喷射单元和扩散单元。 喷射单元包括与反应室的顶壁间隔开的底部，以形成空间。 扩散单元位于气体供应管线的下方并且包括具有向上延伸的凸缘的平面部分，其在气体供应管线下方形成向上开放的空间。 从气体供应管线流出的气体流入向上开放的空间并向上延伸的凸缘上升，以将气体扩散到空间中。

    SEMICONDUCTOR DEVICE HAVING METAL PLUG AND METHOD OF FORMING THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE HAVING METAL PLUG AND METHOD OF FORMING THE SAME 有权
    具有金属插件的半导体器件及其形成方法

    公开(公告)号：US20120299072A1

    公开(公告)日：2012-11-29

    申请号：US13425906

    申请日：2012-03-21

    申请人： WAN-DON KIM ,  Seung-Hwan Lee ,  Beom-Seok Kim ,  Kyu-Ho Cho ,  Oh-Seong Kwon ,  Geun-Kyu Choi ,  Ji-Eun Lim ,  Yong-Suk Tak

    发明人： WAN-DON KIM ,  Seung-Hwan Lee ,  Beom-Seok Kim ,  Kyu-Ho Cho ,  Oh-Seong Kwon ,  Geun-Kyu Choi ,  Ji-Eun Lim ,  Yong-Suk Tak

    IPC分类号： H01L27/06

    CPC分类号： H01L21/823475 ,  H01L21/823456

    摘要： Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.

    摘要翻译： 提供了包括第一，第二和第三源极/漏极区域的半导体器件。 提供了与第一源/漏区接触的第一导电插塞，具有第一宽度和第一高度，并且包括第一材料。 设置覆盖第一导电插塞和基板的层间绝缘层。 提供垂直穿过层间绝缘层以与具有第二宽度和第二高度并且包括第二材料的第二源/漏区接触的第二导电插塞。 设置垂直贯穿层间绝缘层与第三源极/漏极区域接触的第三导电插塞，具有第三宽度和第三高度，并且包括第三材料。 第二种材料包括贵金属，贵金属氧化物或钙钛矿型导电氧化物。