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1.发明申请公开(公告)号：US20120133026A1
公开(公告)日：2012-05-31
申请号：US13121133
申请日：2008-10-29
CPC分类号： H01L27/10 , H01L21/2254 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1658 , H01L45/1675
摘要： An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.
摘要翻译： 电驱动装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。 该器件还包括位于i）第一电极和有源区之间的界面处的掺杂剂引发剂或掺杂剂中的至少一种，或ii）第二电极和有源区，或iii）活性区和第一和 第二电极。
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2.发明授权公开(公告)号：US08766228B2
公开(公告)日：2014-07-01
申请号：US13121133
申请日：2008-10-29
IPC分类号： H01L21/00
CPC分类号： H01L27/10 , H01L21/2254 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1658 , H01L45/1675
摘要： An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.
摘要翻译： 电驱动装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。 该器件还包括位于i）第一电极和有源区之间的界面处的掺杂剂引发剂或掺杂剂中的至少一种，或ii）第二电极和有源区，或iii）活性区和第一和 第二电极。
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3.发明授权Analyte stages including tunable resonant cavities and Raman signal-enhancing structures 有权分析物级包括可调谐共振腔和拉曼信号增强结构公开(公告)号：US07511808B2
公开(公告)日：2009-03-31
申请号：US11414077
申请日：2006-04-27
IPC分类号： G01J3/44
CPC分类号： G01N21/658 , G01J3/26 , G01J3/44 , G01N2021/651
摘要： An analyte stage for use in a spectroscopy system includes a tunable resonant cavity that is capable of resonating electromagnetic radiation having wavelengths less than about 10,000 nanometers, a substrate at least partially disposed within the cavity, and a Raman signal-enhancing structure at least partially disposed within the tunable resonant cavity. A spectroscopy system includes such an analyte stage, a radiation source, and a radiation detector. Methods for performing Raman spectroscopy include using such analyte stages and systems to tune a resonant cavity to resonate Raman scattered radiation that is scattered by an analyte.
摘要翻译： 用于光谱系统的分析物级包括能够谐振具有小于约10,000纳米的波长的电磁辐射的可调谐谐振腔，至少部分地设置在空腔内的衬底和至少部分地布置的拉曼信号增强结构 在可调谐谐振腔内。 光谱系统包括这样的分析物级，辐射源和辐射检测器。 执行拉曼光谱的方法包括使用这些分析物级和系统来调谐谐振腔以共振被分析物散射的拉曼散射辐射。
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公开(公告)号：US20110267870A1
公开(公告)日：2011-11-03
申请号：US13142580
申请日：2009-01-30
CPC分类号： G11C8/10 , G11C13/0007 , G11C13/0023 , G11C2213/32 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A decoding structure employs a main terminal (130), a first memristive switch (112) connected between the main terminal (130) and a first addressable terminal (132), and a second memristive switch (114) connected between the main terminal (130) and a second addressable terminal (134). The second memristive switch (114) is oriented so that a voltage polarity on the main terminal (130) that tends to turn the first memristive switch (112) on tends to turn the second memristive switch (114) off.
摘要翻译： 解码结构采用主端子（130），连接在主端子（130）和第一可寻址端子（132）之间的第一忆阻开关（112）和连接在主端子（130）之间的第二忆阻开关（114） ）和第二可寻址终端（134）。 第二忆阻开关（114）的取向使得倾向于使第一忆阻开关（112）转动的主端子（130）上的电压极性倾向于使第二忆阻开关（114）转动。
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公开(公告)号：US08437172B2
公开(公告)日：2013-05-07
申请号：US13142580
申请日：2009-01-30
IPC分类号： G11C8/10
CPC分类号： G11C8/10 , G11C13/0007 , G11C13/0023 , G11C2213/32 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A decoding structure employs a main terminal (130), a first memristive switch (112) connected between the main terminal (130) and a first addressable terminal (132), and a second memristive switch (114) connected between the main terminal (130) and a second addressable terminal (134). The second memristive switch (114) is oriented so that a voltage polarity on the main terminal (130) that tends to turn the first memristive switch (112) on tends to turn the second memristive switch (114) off.
摘要翻译： 解码结构采用主端子（130），连接在主端子（130）和第一可寻址端子（132）之间的第一忆阻开关（112）和连接在主端子（130）之间的第二忆阻开关（114） ）和第二可寻址终端（134）。 第二忆阻开关（114）的取向使得倾向于使第一忆阻开关（112）转动的主端子（130）上的电压极性倾向于使第二忆阻开关（114）转动。
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公开(公告)号：US07763552B2
公开(公告)日：2010-07-27
申请号：US11413476
申请日：2006-04-28
申请人： William M. Tong , Duncan Stewart , R. Stanley Williams , Manish Sharma , Zhiyong Li , Gary A. Gibson
发明人： William M. Tong , Duncan Stewart , R. Stanley Williams , Manish Sharma , Zhiyong Li , Gary A. Gibson
IPC分类号： H01L21/768 , H01L21/62
CPC分类号： H01L21/76892 , H01L21/76823 , H01L23/5254 , H01L27/1052 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A method of forming an electrical interconnect, which includes a first electrode, an interlayer of a programmable material disposed over at least a portion of the first electrode, and a second electrode disposed over the programmable material at a non-zero angle relative to the first electrode. The interlayer includes a modified region having differing electrical properties than the rest of the interlayer, sandwiched at the junction of the first electrode and the second electrode. The interlayer may be exposed to a focused beam to form the modified region.
摘要翻译： 一种形成电互连的方法，包括第一电极，设置在第一电极的至少一部分上的可编程材料的中间层，以及设置在可编程材料上的第二电极，相对于第一电极以非零角度 电极。 中间层包括夹在第一电极和第二电极的接合处的与中间层的其余部分不同的电特性的改性区域。 中间层可以暴露于聚焦光束以形成改质区域。
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公开(公告)号：US07639355B2
公开(公告)日：2009-12-29
申请号：US11823281
申请日：2007-06-26
IPC分类号： G01J3/44
CPC分类号： G02B6/1226 , B82Y15/00 , B82Y20/00 , G01N21/35 , G01N21/554 , G01N21/658 , G02B5/008
摘要： Various aspects of the present invention are directed to electric-field-enhancement structures and detection apparatuses that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure includes a substrate having a surface. The substrate is capable of supporting a planar mode having a planar-mode frequency. A plurality of nanofeatures is associated with the surface, and each of nanofeatures exhibits a localized-surface-plasmon mode having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.
摘要翻译： 本发明的各个方面涉及采用这种电场增强结构的电场增强结构和检测装置。 在本发明的一个方面中，电场增强结构包括具有表面的基板。 基板能够支持具有平面模式频率的平面模式。 多个纳米尺度与表面相关联，并且每个纳米尺度表现出具有近似等于平面模式频率的局部表面等离子体激元频率的局部表面等离子体模式。
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公开(公告)号：US20090002701A1
公开(公告)日：2009-01-01
申请号：US11823281
申请日：2007-06-26
CPC分类号： G02B6/1226 , B82Y15/00 , B82Y20/00 , G01N21/35 , G01N21/554 , G01N21/658 , G02B5/008
摘要： Various aspects of the present invention are directed to electric-field-enhancement structures and detection apparatuses that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure includes a substrate having a surface. The substrate is capable of supporting a planar mode having a planar-mode frequency. A plurality of nanofeatures is associated with the surface, and each of nanofeatures exhibits a localized-surface-plasmon mode having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.
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公开(公告)号：US08471234B2
公开(公告)日：2013-06-25
申请号：US13130815
申请日：2009-01-20
IPC分类号： H01L47/00
CPC分类号： H01L21/26586 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/165
摘要： A multilayer memristive device includes a first electrode; a second electrode; a first memristive region and a second memristive region which created by directional ion implantation of dopant ions and are interposed between the first electrode and the second electrode; and mobile dopants which move within the first memristive region and the second memristive region in response to an applied electrical field.
摘要翻译： 多层记忆装置包括第一电极; 第二电极; 通过定向离子注入掺杂剂离子而形成的第一忆阻区和第二忆阻区，并且介于第一电极和第二电极之间; 以及响应于施加的电场在第一忆阻区域和第二忆阻区域内移动的移动掺杂剂。
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公开(公告)号：US20160358742A1
公开(公告)日：2016-12-08
申请号：US14052610
申请日：2013-10-11
申请人： William M. Tong , Alan D. Brodie , Jeffrey Elam , Anil Mane
发明人： William M. Tong , Alan D. Brodie , Jeffrey Elam , Anil Mane
IPC分类号： H01J37/06 , H01J37/12 , C23C16/32 , C23C16/40 , C23C16/34 , H01J37/317 , C23C16/455
CPC分类号： C23C16/45529 , B81B3/0008 , C23C16/32 , C23C16/34 , C23C16/40 , C23C16/402 , C23C16/403 , C23C16/405 , H01J37/026 , H01J37/06 , H01J37/12 , H01J37/3174 , H01J2237/1205 , H01J2237/31794
摘要： A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.
摘要翻译： 公开了一种与电荷放电涂层相关的系统和方法。 可以将电荷漏极涂层施加到电子 - 光学器件的表面以排出与电荷漏极涂层接触的电子，使得电子 - 电子器件的性能不会受到电子电荷积聚的阻碍。 电荷漏极涂层可以包括聚集成嵌入高介电绝缘材料中的簇的掺杂材料。 电荷漏极涂层可以沉积到电子 - 光学器件的小透镜的内表面上。
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