公开(公告)号：US06605549B2

公开(公告)日：2003-08-12

申请号：US09968212

申请日：2001-09-29

申请人： Jihperng Leu ,  Chih-I Wu ,  Ying Zhou ,  Grant M. Kloster

发明人： Jihperng Leu ,  Chih-I Wu ,  Ying Zhou ,  Grant M. Kloster

IPC分类号： H01L2131

CPC分类号： H01L21/32051 ,  C23C16/02 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874

摘要： A method to improve nucleation and/or adhesion of a CVD or ALD-deposited film/layer onto a low-dielectric constant (low-k) dielectric layer, such as a polymeric dielectric or a carbon-doped oxide. In an embodiment, the method includes providing a substrate into a deposition chamber. A dielectric layer having a reactive component is formed over the substrate. The formed dielectric layer having the reactive component is then processed to produce polar groups or polar sites at least on a surface of the formed dielectric layer. The present invention forms a low-k organic polymer dielectric layer or an organic-doped oxide dielectric layer having improved nucleation and/or adhesion properties for a subsequently deposited layer such as a barrier material layer.

摘要翻译： 改善CVD或ALD沉积膜/层在低介电常数（低k）电介质层（例如聚合物电介质或碳掺杂氧化物）上的成核和/或粘附的方法。 在一个实施例中，该方法包括将衬底提供到沉积室中。 在基板上形成具有反应成分的电介质层。 然后将形成的具有反应性组分的介电层至少在形成的介电层的表面上进行处理以产生极性基团或极性位点。 本发明形成低k有机聚合物介电层或有机掺杂的氧化物介电层，其具有改进的成核和/或粘合性能，用于随后沉积的层例如阻挡材料层。

公开(公告)号：US07239019B2

公开(公告)日：2007-07-03

申请号：US11170322

申请日：2005-06-28

申请人： Jihperng Leu ,  Grant M. Kloster ,  David H. Gracias ,  Lee D. Rockford ,  Peter K. Moon ,  Chris E. Barns

发明人： Jihperng Leu ,  Grant M. Kloster ,  David H. Gracias ,  Lee D. Rockford ,  Peter K. Moon ,  Chris E. Barns

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76835 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682

摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

摘要翻译： 公开了一种层间电介质结构及其制造方法。 形成初始包含多孔基质和致孔剂的复合介电层。 在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。 所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。 复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

公开(公告)号：US06943121B2

公开(公告)日：2005-09-13

申请号：US10302073

申请日：2002-11-21

申请人： Jihperng Leu ,  Grant M. Kloster ,  David H. Gracias ,  Lee D. Rockford ,  Peter K. Moon ,  Chris E. Barns

发明人： Jihperng Leu ,  Grant M. Kloster ,  David H. Gracias ,  Lee D. Rockford ,  Peter K. Moon ,  Chris E. Barns

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/302 ,  H01L21/31 ,  H01L21/461 ,  H01L21/469

CPC分类号： H01L21/76835 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682

摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

公开(公告)号：US06903461B2

公开(公告)日：2005-06-07

申请号：US10739778

申请日：2003-12-18

申请人： Grant M. Kloster ,  Jihperng Leu ,  Hyun-Mog Park

发明人： Grant M. Kloster ,  Jihperng Leu ,  Hyun-Mog Park

IPC分类号： H01L21/764 ,  H01L21/768 ,  H01L23/485

CPC分类号： H01L21/76811 ,  H01L21/764 ,  H01L21/7682 ,  H01L2221/1036

摘要： An ultraviolet sensitive material may be formed within a semiconductor structure covered with a suitable hard mask. At an appropriate time, the underlying ultraviolet sensitive material may be exposed to ultraviolet radiation, causing the material to exhaust through the overlying hard mask. As a result, an air gap may be created having desirable characteristics as a dielectric.

摘要翻译： 可以在被合适的硬掩模覆盖的半导体结构内形成紫外线敏感材料。 在适当的时间，底层紫外线敏感材料可能暴露于紫外线辐射，导致材料通过上覆的硬掩模排出。 结果，可以产生具有作为电介质的期望特性的气隙。

公开(公告)号：US06734118B2

公开(公告)日：2004-05-11

申请号：US10252295

申请日：2002-09-23

申请人： Grant M. Kloster ,  David W. Staines ,  Jihperng Leu

发明人： Grant M. Kloster ,  David W. Staines ,  Jihperng Leu

IPC分类号： H01L2131

CPC分类号： H01L21/31058 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826

摘要： Treatment of dielectric material includes using a directed energy to break bonds in a dielectric material and a reactive gas to repair those bonds with an element of the reactive gas. The treated dielectric material may exhibit greater mechanical strength without a significantly greater dielectric constant. A treatment reactor including a directed energy source apparatus and a delivery mechanism to deliver the reactive gas is also described.

摘要翻译： 介电材料的处理包括使用定向能量破坏电介质材料和反应气体中的键，以修复与反应气体的元素的这些键。 经处理的介电材料可以表现出更大的机械强度而没有显着更大的介电常数。 还描述了包括定向能量源装置和用于输送反应性气体的输送机构的处理反应器。

公开(公告)号：US06846755B2

公开(公告)日：2005-01-25

申请号：US10369931

申请日：2003-02-18

申请人： Grant M. Kloster ,  Jihperng Leu

发明人： Grant M. Kloster ,  Jihperng Leu

IPC分类号： H01L21/316 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02145 ,  H01L21/02142 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/31695

摘要： A dielectric material is strengthened by bonding a metal component to the dielectric matrix. The metal component may be a metal oxide or metal oxide precursor. The metal component may be deposited on the substrate with the dielectric material, or sol-gel chemistry may be used and the liquid solution spin-coated on a substrate.

摘要翻译： 电介质材料通过将金属组分键合到电介质基体而得到增强。 金属成分可以是金属氧化物或金属氧化物前体。 金属组分可以用电介质材料沉积在衬底上，或者可以使用溶胶 - 凝胶化学，并将液体溶液旋涂在衬底上。

公开(公告)号：US07018918B2

公开(公告)日：2006-03-28

申请号：US10701251

申请日：2003-11-03

申请人： Grant M. Kloster ,  Kevin P. O'brien ,  Michael D. Goodner ,  Jihperng Leu ,  David H. Gracias ,  Lee D. Rockford ,  Peter K. Moon ,  Chris E. Barns

发明人： Grant M. Kloster ,  Kevin P. O'brien ,  Michael D. Goodner ,  Jihperng Leu ,  David H. Gracias ,  Lee D. Rockford ,  Peter K. Moon ,  Chris E. Barns

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/312 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02362 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76835 ,  H01L2221/1036 ,  H01L2221/1047

摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

摘要翻译： 公开了一种层间电介质结构及其制造方法。 形成初始包含多孔基质和致孔剂的复合介电层。 在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。 所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。 复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

公开(公告)号：US20050272248A1

公开(公告)日：2005-12-08

申请号：US11185190

申请日：2005-07-19

申请人： Grant M. Kloster ,  Xiarong Morrow ,  Jihperng Leu

发明人： Grant M. Kloster ,  Xiarong Morrow ,  Jihperng Leu

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/76

CPC分类号： H01L23/5329 ,  H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a suitable porous or low density permeable material. At an appropriate time, the underlying sacrificial material is decomposed and diffused away through the overlying permeable material. As a result, at least one void is created, contributing to desirable dielectric characteristics.

摘要翻译： 在由适当的多孔或低密度可渗透材料覆盖的微电子结构内形成低k电介质牺牲材料。 在适当的时间，潜在的牺牲材料通过上覆的可渗透材料分解和扩散。 结果，产生至少一个空隙，有助于所需的介电特性。

公开(公告)号：US06734094B2

公开(公告)日：2004-05-11

申请号：US10134264

申请日：2002-04-29

申请人： Grant M. Kloster ,  Jihperng Leu ,  Hyun-Mog Park

发明人： Grant M. Kloster ,  Jihperng Leu ,  Hyun-Mog Park

IPC分类号： H01L21764

CPC分类号： H01L21/76811 ,  H01L21/764 ,  H01L21/7682 ,  H01L2221/1036

摘要： An ultraviolet sensitive material may be formed within a semiconductor structure covered with a suitable hard mask. At an appropriate time, the underlying ultraviolet sensitive material may be exposed to ultraviolet radiation, causing the material to exhaust through the overlying hard mask. As a result, an air gap may be created having desirable characteristics as a dielectric.

摘要翻译： 可以在被合适的硬掩模覆盖的半导体结构内形成紫外线敏感材料。 在适当的时间，底层紫外线敏感材料可能暴露于紫外线辐射，导致材料通过上覆的硬掩模排出。 结果，可以产生具有作为电介质的期望特性的气隙。

公开(公告)号：US07294934B2

公开(公告)日：2007-11-13

申请号：US10301957

申请日：2002-11-21

申请人： Grant M. Kloster ,  Xiarong Morrow ,  Jihperng Leu

发明人： Grant M. Kloster ,  Xiarong Morrow ,  Jihperng Leu

IPC分类号： H01L23/52

CPC分类号： H01L23/5329 ,  H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a suitable porous or low density permeable material. At an appropriate time, the underlying sacrificial material is decomposed and diffused away through the overlying permeable material. As a result, at least one void is created, contributing to desirable dielectric characteristics.

摘要翻译： 在由适当的多孔或低密度可渗透材料覆盖的微电子结构内形成低k电介质牺牲材料。 在适当的时间，潜在的牺牲材料通过上覆的可渗透材料分解和扩散。 结果，产生至少一个空隙，有助于所需的介电特性。