利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.026 秒)

    Semiconductor ridge waveguide laser with lateral current injection
    3.
    发明授权
    Semiconductor ridge waveguide laser with lateral current injection 失效
    半导体脊波导激光器横向电流注入

    公开(公告)号：US5563902A

    公开(公告)日：1996-10-08

    申请号：US425670

    申请日：1995-04-18

    申请人： Jingming Xu ,  Michael Shur ,  Boris Gelmont

    发明人： Jingming Xu ,  Michael Shur ,  Boris Gelmont

    IPC分类号： H01S5/042 ,  H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/183 ,  H01S5/42 ,  H01S3/19 ,  H01S3/10

    CPC分类号： H01S5/18327 ,  H01S5/0424 ,  H01S5/06203 ,  H01S5/101 ,  H01S5/1017 ,  H01S5/12 ,  H01S5/1237 ,  H01S5/18341 ,  H01S5/423

    摘要： A semiconductor laser device is provided in which an active layer is sandwiched between and upper and lower cladding layer, the lower cladding layer being situated on a semi-insulating substrate. The upper cladding layer includes a raised ridge section running from end to end between the facets or end surfaces of the laser cavity. The ridge section aids in optical confinement. A p+ contact region and an n+ contact region are formed extending though the upper cladding layer, the active region and the lower cladding layer on both sides of the ridge to provide lateral injection of charge carriers into the active region of the laser.

    摘要翻译： 提供半导体激光器件，其中有源层夹在上下包层之间，下包层位于半绝缘衬底上。 上包层包括在激光腔的小面或端面之间从端到端延伸的凸脊部分。 脊部分有助于光学限制。 通过在脊的两侧延伸穿过上包层，有源区和下包层形成p +接触区和n +接触区，以提供电荷载流子向激光器的有源区域的横向注入。

    Double-base hot carrier transistor
    4.
    发明授权
    Double-base hot carrier transistor 失效
    双基热载流子晶体管

    公开(公告)号：US4901122A

    公开(公告)日：1990-02-13

    申请号：US327381

    申请日：1989-03-22

    申请人： Jingming Xu ,  Michael Shur

    发明人： Jingming Xu ,  Michael Shur

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7606

    摘要： A hot electron transistor includes two base regions between the emitter and collector, with the first and second bases separated by a base-base barrier. The emitter injects high energy electrons across an emitter barrier into the first base, which acts as an electron gun to focus and accelerate the electrons and inject them across the base-base barrier into the second base. An input signal is applied to the second base, to modulate the flow of electrons from the second base across a collector barrier and into the collector.

    摘要翻译： 热电子晶体管包括在发射极和集电极之间的两个基极区域，第一和第二基极由碱基阻挡层隔开。 发射极将高能电子穿过发射器势垒注入第一基极，第一基极充当电子枪以聚焦和加速电子并将它们注入穿过基底势垒进入第二基极。 输入信号被施加到第二基座，以便调制来自第二基极的电子流通过集电极屏障并进入收集器。

    Tunneling emitter bipolar transistor
    5.
    发明授权
    Tunneling emitter bipolar transistor 失效
    隧道发射极双极晶体管

    公开(公告)号：US4845541A

    公开(公告)日：1989-07-04

    申请号：US204959

    申请日：1988-06-06

    申请人： Jingming Xu ,  Michael Shur

    发明人： Jingming Xu ,  Michael Shur

    IPC分类号： H01L29/08 ,  H01L29/205

    CPC分类号： H01L29/205 ,  H01L29/0895

    摘要： A bipolar transistor has a barrier layer interposed between its base and its emitter. The barrier layer is formed of a different, wider band gap, semiconductor material than the base and the emitter and has the same conductivity type as the emitter. The barrier layer exhibits a large difference in the effective electron mass and the effective whole mass, and presents a small barrier to majority carriers. The tunneling emitter bipolar transistor exhibits a comparable current gain while having better temperature stability, less light sensitivity, and a much lower emitter resistance (leading to a much higher cut-off frequency) than conventional heterojunction bipolar transistors.

    摘要翻译： 双极晶体管具有介于其基极和发射极之间的阻挡层。 阻挡层由与基极和发射极不同的较宽的带隙，半导体材料形成，并具有与发射极相同的导电类型。 阻挡层在有效电子质量和有效整体质量上表现出很大的差异，并且对多数载体呈现小的阻挡。 隧道射极双极晶体管具有相当的电流增益，同时具有比传统异质结双极晶体管更好的温度稳定性，更低的光灵敏度和更低的发射极电阻（导致更高的截止频率）。

    Semiconductor laser device
    9.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5491711A

    公开(公告)日：1996-02-13

    申请号：US145835

    申请日：1993-11-04

    申请人： Ranjit S. Mand ,  Tetsuro Ijichi ,  Jingming Xu

    发明人： Ranjit S. Mand ,  Tetsuro Ijichi ,  Jingming Xu

    IPC分类号： H01S5/028 ,  H01S5/16 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/164 ,  H01S5/028 ,  H01S5/162 ,  H01S5/32333

    摘要： A semiconductor laser device having a body with opposed facets and including an active region with aluminum diffused into the active region along the facets thereof. Adding aluminum to the portions of the active region along the facets increases the bandgap of the active region along the facets and provides a semiconductor laser device having an increased catastrophic optical damage (COD) level. The semiconductor laser device is produced by depositing a thin film of aluminum on the facets of the semiconductor laser device and then heat treating to cause diffusion of the aluminum film or phosphorus into the body of the semiconductor laser device along the facets thereof, thereby changing the composition of the semiconductor laser device body along the facets. Alternatively, phosphorus may be diffused into the body of the semiconductor laser device along the facets thereof.

    摘要翻译： 一种半导体激光器件，具有具有相对面并具有铝的有源区的主体沿其小面扩散到有源区中。 沿着刻面向有源区域的部分添加铝增加沿着刻面的有源区的带隙，并提供具有增加的灾难性光学损伤（COD）水平的半导体激光器件。 半导体激光器件通过在半导体激光器件的小面上沉积铝薄膜然后进行热处理以使铝膜或磷沿着其半面扩散到半导体激光器件的主体中而产生，从而改变 半导体激光器件本体沿着刻面的组成。 或者，磷可以沿其小面扩散到半导体激光器件的主体中。

    Semiconductor laser device
    10.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5394424A

    公开(公告)日：1995-02-28

    申请号：US91719

    申请日：1993-07-14

    申请人： Tetsuro Ijichi ,  Michinori Irikawa ,  Ranjit S. Mand ,  Jingming Xu

    发明人： Tetsuro Ijichi ,  Michinori Irikawa ,  Ranjit S. Mand ,  Jingming Xu

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231

    摘要： There is provided a semiconductor laser device capable of emitting a laser beam having stable transverse modes. A ridge type semiconductor laser device comprises an upper clad layer 15 left on its active layer to a thickness (d) between 0.25 and 0.50 m in order to ensure a stable production of fundamental transverse modes for laser operation and a rib-shaped clad layer 16 having a bottom width (W) between 2.0 .mu.m and 3.5 .mu.m and projecting from the upper clad layer in juxtaposition with the light emitting region of the active layer 13. When d and W are found within the respective ranges, the device emits a laser beam having stable transverse modes.

    摘要翻译： 提供了能够发射具有稳定的横向模式的激光束的半导体激光装置。 脊型半导体激光器件包括在其有源层上留下的上覆层15至厚度（d）在0.25和0.50μm之间，以确保稳定地产生用于激光器操作的基本横模和肋形覆层16 具有2.0μm和3.5μm之间的底部宽度（W）并且从上部包覆层与有源层13的发光区域并置突出。当在相应的范围内发现d和W时，器件发射 激光束具有稳定的横向模式。