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158 条记录 (耗时 0.023 秒)

    Semiconductor ridge waveguide laser with lateral current injection
    1.
    发明授权
    Semiconductor ridge waveguide laser with lateral current injection 失效
    半导体脊波导激光器横向电流注入

    公开(公告)号：US5563902A

    公开(公告)日：1996-10-08

    申请号：US425670

    申请日：1995-04-18

    申请人： Jingming Xu ,  Michael Shur ,  Boris Gelmont

    发明人： Jingming Xu ,  Michael Shur ,  Boris Gelmont

    IPC分类号： H01S5/042 ,  H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/183 ,  H01S5/42 ,  H01S3/19 ,  H01S3/10

    CPC分类号： H01S5/18327 ,  H01S5/0424 ,  H01S5/06203 ,  H01S5/101 ,  H01S5/1017 ,  H01S5/12 ,  H01S5/1237 ,  H01S5/18341 ,  H01S5/423

    摘要： A semiconductor laser device is provided in which an active layer is sandwiched between and upper and lower cladding layer, the lower cladding layer being situated on a semi-insulating substrate. The upper cladding layer includes a raised ridge section running from end to end between the facets or end surfaces of the laser cavity. The ridge section aids in optical confinement. A p+ contact region and an n+ contact region are formed extending though the upper cladding layer, the active region and the lower cladding layer on both sides of the ridge to provide lateral injection of charge carriers into the active region of the laser.

    摘要翻译： 提供半导体激光器件，其中有源层夹在上下包层之间，下包层位于半绝缘衬底上。 上包层包括在激光腔的小面或端面之间从端到端延伸的凸脊部分。 脊部分有助于光学限制。 通过在脊的两侧延伸穿过上包层，有源区和下包层形成p +接触区和n +接触区，以提供电荷载流子向激光器的有源区域的横向注入。

    Double-base hot carrier transistor
    4.
    发明授权
    Double-base hot carrier transistor 失效
    双基热载流子晶体管

    公开(公告)号：US4901122A

    公开(公告)日：1990-02-13

    申请号：US327381

    申请日：1989-03-22

    申请人： Jingming Xu ,  Michael Shur

    发明人： Jingming Xu ,  Michael Shur

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7606

    摘要： A hot electron transistor includes two base regions between the emitter and collector, with the first and second bases separated by a base-base barrier. The emitter injects high energy electrons across an emitter barrier into the first base, which acts as an electron gun to focus and accelerate the electrons and inject them across the base-base barrier into the second base. An input signal is applied to the second base, to modulate the flow of electrons from the second base across a collector barrier and into the collector.

    摘要翻译： 热电子晶体管包括在发射极和集电极之间的两个基极区域，第一和第二基极由碱基阻挡层隔开。 发射极将高能电子穿过发射器势垒注入第一基极，第一基极充当电子枪以聚焦和加速电子并将它们注入穿过基底势垒进入第二基极。 输入信号被施加到第二基座，以便调制来自第二基极的电子流通过集电极屏障并进入收集器。

    Tunneling emitter bipolar transistor
    5.
    发明授权
    Tunneling emitter bipolar transistor 失效
    隧道发射极双极晶体管

    公开(公告)号：US4845541A

    公开(公告)日：1989-07-04

    申请号：US204959

    申请日：1988-06-06

    申请人： Jingming Xu ,  Michael Shur

    发明人： Jingming Xu ,  Michael Shur

    IPC分类号： H01L29/08 ,  H01L29/205

    CPC分类号： H01L29/205 ,  H01L29/0895

    摘要： A bipolar transistor has a barrier layer interposed between its base and its emitter. The barrier layer is formed of a different, wider band gap, semiconductor material than the base and the emitter and has the same conductivity type as the emitter. The barrier layer exhibits a large difference in the effective electron mass and the effective whole mass, and presents a small barrier to majority carriers. The tunneling emitter bipolar transistor exhibits a comparable current gain while having better temperature stability, less light sensitivity, and a much lower emitter resistance (leading to a much higher cut-off frequency) than conventional heterojunction bipolar transistors.

    摘要翻译： 双极晶体管具有介于其基极和发射极之间的阻挡层。 阻挡层由与基极和发射极不同的较宽的带隙，半导体材料形成，并具有与发射极相同的导电类型。 阻挡层在有效电子质量和有效整体质量上表现出很大的差异，并且对多数载体呈现小的阻挡。 隧道射极双极晶体管具有相当的电流增益，同时具有比传统异质结双极晶体管更好的温度稳定性，更低的光灵敏度和更低的发射极电阻（导致更高的截止频率）。

    SMART VISUAL DISPLAY
    6.
    发明公开
    SMART VISUAL DISPLAY 审中-公开

    公开(公告)号：US20240231729A9

    公开(公告)日：2024-07-11

    申请号：US17769475

    申请日：2020-10-21

    申请人： Michael Shur

    发明人： Michael Shur

    IPC分类号： G06F3/14 ,  G09G3/32

    CPC分类号： G06F3/14 ,  G09G3/32 ,  G09G2320/0666 ,  G09G2320/0686 ,  G09G2320/0693 ,  G09G2354/00 ,  G09G2360/144 ,  G09G2370/04

    摘要： One embodiment provides a computing device. The computing device is configured to couple to a display. The computing device includes an ambient detection module configured to detect a characteristic of ambient light relative to at least a portion of a display area of the display. The computing device further includes a displayed image optimization module configured to optimize a feature of at least a portion of a displayed image based, at least in part, on the characteristic of the ambient light.

    Ohmic contact to semiconductor
    7.
    发明授权
    Ohmic contact to semiconductor 有权
    欧姆接触半导体

    公开(公告)号：US09263538B2

    公开(公告)日：2016-02-16

    申请号：US13296581

    申请日：2011-11-15

    申请人： Remigijus Gaska ,  Michael Shur

    发明人： Remigijus Gaska ,  Michael Shur

    IPC分类号： H01L29/45 ,  H01L33/38 ,  H01L33/40

    CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

    摘要： An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.

    摘要翻译： 提供了与包括异质结构阻挡层和邻近异质结构阻挡层的金属层的半导体层的欧姆接触。 异质结构阻挡层可以在异质结构阻挡层和半导体层的异质界面处形成用于接触的二维自由载气。 金属层被配置成与二维无载体气体形成接触。

    Deep ultraviolet light emitting diode
    8.
    发明授权
    Deep ultraviolet light emitting diode 有权
    深紫外线发光二极管

    公开(公告)号：US08907322B2

    公开(公告)日：2014-12-09

    申请号：US13161961

    申请日：2011-06-16

    申请人： Remigijus Gaska ,  Maxim S. Shatalov ,  Michael Shur

    发明人： Remigijus Gaska ,  Maxim S. Shatalov ,  Michael Shur

    IPC分类号： H01L31/00 ,  H01L33/10 ,  H01L33/04 ,  H01L33/00 ,  H01L33/40 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38

    CPC分类号： H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L33/22 ,  H01L33/385 ,  H01L33/405

    摘要： A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure. The diode can include a composite contact, including an adhesion layer, which is at least partially transparent to light generated by the light generating structure and a reflecting metal layer configured to reflect at least a portion of the light generated by the light generating structure.

    摘要翻译： 提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。 光产生结构包括一组量子阱。 接触层和发光结构可以被配置为使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量 生成结构。 另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。 二极管可以包括阻挡层，其被配置为使得阻挡层的能量与量子阱的电子基态能量之间的差异大于光生成结构的材料中的极化光学声子的能量 。 二极管可以包括复合触点，其包括对由光产生结构产生的光至少部分透明的粘附层和被配置为反射由光产生结构产生的光的至少一部分的反射金属层。

    Emitting Device with Improved Extraction
    10.
    发明申请
    Emitting Device with Improved Extraction 有权
    发射装置改进提取

    公开(公告)号：US20140008675A1

    公开(公告)日：2014-01-09

    申请号：US13517711

    申请日：2012-06-14

    申请人： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

    发明人： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

    IPC分类号： H01L33/60 ,  F21V5/00

    CPC分类号： H01L33/60 ,  F21V5/002 ,  H01L33/0045 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0083 ,  Y10T29/49

    摘要： A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

    摘要翻译： 提供了用于改善辐射通过界面的传播的异型表面。 成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。 成形表面还包括一​​组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。