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公开(公告)号：US09217209B2
公开(公告)日：2015-12-22
申请号：US13410596
申请日：2012-03-02
申请人： Jingyan Zhang , Er-Xuan Ping
发明人： Jingyan Zhang , Er-Xuan Ping
摘要： Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.
摘要翻译： 提供清洗衬底并在其上生长外延硅的方法。 在外延硅生长之前，将晶片暴露于等离子体足够的时间，以便清洁晶片。 该方法表现出增强的选择性和减少外延硅的横向生长。 晶片可以具有通过将晶片暴露于等离子体而钝化的电介质区域。
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公开(公告)号：US20060243196A1
公开(公告)日：2006-11-02
申请号：US11478401
申请日：2006-06-29
申请人： Jingyan Zhang , Er-Xuan Ping
发明人： Jingyan Zhang , Er-Xuan Ping
摘要： Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.
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3.发明授权Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same 有权具有具有减小的横截面积的碳开关材料的存储单元及其形成方法公开(公告)号：US08471360B2
公开(公告)日：2013-06-25
申请号：US12760156
申请日：2010-04-14
申请人： Franz Kreupl , Er-Xuan Ping , Jingyan Zhang , Huiwen Xu
发明人： Franz Kreupl , Er-Xuan Ping , Jingyan Zhang , Huiwen Xu
IPC分类号： H01L29/92
CPC分类号： H01L45/149 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/124 , H01L45/1253 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1691
摘要： In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.
摘要翻译： 在第一方面中，提供了形成金属 - 绝缘体 - 金属（“MIM”）叠层的方法，所述方法包括：（1）在开口内形成具有开口的电介质材料和第一导电碳层; （2）在开口中形成间隔物; （3）在间隔件的侧壁上形成碳基开关材料; 和（4）在碳基开关材料上形成第二导电碳层。 介电材料中的开口的横截面积与间隔件侧壁上的碳基开关材料的横截面积的比率至少为5.许多其它方面。
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公开(公告)号：US20120180716A1
公开(公告)日：2012-07-19
申请号：US13410596
申请日：2012-03-02
申请人： Jingyan Zhang , Er-Xuan Ping
发明人： Jingyan Zhang , Er-Xuan Ping
摘要： Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.
摘要翻译： 提供清洗衬底并在其上生长外延硅的方法。 在外延硅生长之前，将晶片暴露于等离子体足够的时间，以便清洁晶片。 该方法表现出增强的选择性和减少外延硅的横向生长。 晶片可以具有通过将晶片暴露于等离子体而钝化的电介质区域。
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公开(公告)号：US08152918B2
公开(公告)日：2012-04-10
申请号：US11478401
申请日：2006-06-29
申请人： Jingyan Zhang , Er-Xuan Ping
发明人： Jingyan Zhang , Er-Xuan Ping
IPC分类号： C30B21/02
摘要： Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.
摘要翻译： 提供清洗衬底并在其上生长外延硅的方法。 在外延硅生长之前，将晶片暴露于等离子体足够的时间，以便清洁晶片。 该方法表现出增强的选择性和减少外延硅的横向生长。 晶片可以具有通过将晶片暴露于等离子体而钝化的电介质区域。
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6.发明申请MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-SECTIONAL AREA AND METHODS FOR FORMING THE SAME 有权具有减少的交叉区域的碳开关材料的存储单元及其形成方法公开(公告)号：US20110254126A1
公开(公告)日：2011-10-20
申请号：US12760156
申请日：2010-04-14
申请人： Franz Kreupl , Er-Xuan Ping , Jingyan Zhang , Huiwen Xu
发明人： Franz Kreupl , Er-Xuan Ping , Jingyan Zhang , Huiwen Xu
CPC分类号： H01L45/149 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/124 , H01L45/1253 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1691
摘要： In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.
摘要翻译： 在第一方面中，提供了形成金属 - 绝缘体 - 金属（“MIM”）叠层的方法，所述方法包括：（1）在开口内形成具有开口的电介质材料和第一导电碳层; （2）在开口中形成间隔物; （3）在间隔件的侧壁上形成碳基开关材料; 和（4）在碳基开关材料上形成第二导电碳层。 介电材料中的开口的横截面积与间隔件侧壁上的碳基开关材料的横截面积的比率至少为5.许多其它方面。
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公开(公告)号：US07101435B2
公开(公告)日：2006-09-05
申请号：US10448687
申请日：2003-05-30
申请人： Jingyan Zhang , Er-Xuan Ping
发明人： Jingyan Zhang , Er-Xuan Ping
IPC分类号： C30B25/16
摘要： Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.
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公开(公告)号：US08520424B2
公开(公告)日：2013-08-27
申请号：US13157204
申请日：2011-06-09
申请人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S. Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
发明人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S. Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
IPC分类号： G11C11/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。 每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。 第一和第二电阻切换层都可以具有双极或单极开关特性。 在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机构。 由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。 提供了用于RSME不同层的材料和材料的组合。
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9.发明授权Memory cell with silicon-containing carbon switching layer and methods for forming the same 有权具有含硅碳交换层的记忆单元及其形成方法公开(公告)号：US08237146B2
公开(公告)日：2012-08-07
申请号：US12711810
申请日：2010-02-24
申请人： Franz Kreupl , Jingyan Zhang , Huiwen Xu
发明人： Franz Kreupl , Jingyan Zhang , Huiwen Xu
CPC分类号： H01L45/149 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1675
摘要： In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (MIM) stack, the MIM stack including (a) a first conductive carbon layer; (b) a low-hydrogen, silicon-containing carbon layer above the first conductive carbon layer; and (c) a second conductive carbon layer above the low-hydrogen, silicon-containing carbon layer; and (2) forming a steering element coupled to the MIM stack. Numerous other aspects are provided.
摘要翻译： 在第一方面，提供一种形成存储单元的方法，其包括：（1）形成金属 - 绝缘体 - 金属（MIM）堆叠，所述MIM堆叠包括（a）第一导电碳层; （b）在第一导电碳层之上的低氢含硅碳层; 和（c）低于含氢的碳层之上的第二导电碳层; 和（2）形成耦合到所述MIM堆叠的操纵元件。 提供了许多其他方面。
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10.发明授权Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same 有权采用选择性制造的碳纳米管可逆电阻切换元件的记忆单元及其形成方法公开(公告)号：US08878235B2
公开(公告)日：2014-11-04
申请号：US13235409
申请日：2011-09-18
申请人： April D. Schricker , Wu-Yi Chien , Kun Hou , Raghuveer S. Makala , Jingyan Zhang , Yibo Nian
发明人： April D. Schricker , Wu-Yi Chien , Kun Hou , Raghuveer S. Makala , Jingyan Zhang , Yibo Nian
IPC分类号： H01L27/08 , H01L29/96 , H01L21/332 , B82Y10/00 , H01L45/00 , H01L27/10 , H01L27/24 , G11C13/00 , G11C5/02 , G11C11/54 , B82Y20/00 , G11C13/02
CPC分类号： B82Y10/00 , B82Y20/00 , G11C5/02 , G11C11/54 , G11C13/0014 , G11C13/025 , G11C2213/35 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616
摘要： In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (“CNT”) material above the substrate, wherein the CNT material comprises a single CNT. Numerous other aspects are provided.
摘要翻译： 在一些方面，提供一种制造存储单元的方法，其包括在基板上制造操纵元件，以及通过选择性地制造上述碳纳米管（“CNT”）材料制造耦合到转向元件的可逆电阻开关元件 所述基板，其中所述CNT材料包括单个CNT。 提供了许多其他方面。
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