公开(公告)号：US20070257283A1

公开(公告)日：2007-11-08

申请号：US11416875

申请日：2006-05-03

申请人： Jiunn-Yih Chyan ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Jiunn-Yih Chyan ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/113

CPC分类号： H01L31/1085 ,  H01L27/14621 ,  H01L27/14625 ,  H01L31/02327

摘要： An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.

摘要翻译： 图像传感器装置包括具有感光区域的半导体衬底和嵌入衬底内的第一和第二电极。 第一和第二电极形成狭缝阵列，狭缝阵列被配置为允许光的波长通过光感测区域。 一种用于制造图像传感器的方法包括提供半导体衬底，在半导体衬底上形成多个像素，以及形成嵌入多个像素内的多个狭缝。 多个狭缝被配置为允许光的波长通过多个像素中的每一个。

公开(公告)号：US08053853B2

公开(公告)日：2011-11-08

申请号：US11416875

申请日：2006-05-03

申请人： Jiunn-Yih Chyan ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Jiunn-Yih Chyan ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/113

CPC分类号： H01L31/1085 ,  H01L27/14621 ,  H01L27/14625 ,  H01L31/02327

摘要： An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.

摘要翻译： 图像传感器装置包括具有感光区域的半导体衬底和嵌入衬底内的第一和第二电极。 第一和第二电极形成狭缝阵列，狭缝阵列被配置为允许光的波长通过光感测区域。 一种用于制造图像传感器的方法包括提供半导体衬底，在半导体衬底上形成多个像素，以及形成嵌入多个像素内的多个狭缝。 多个狭缝被配置为允许光的波长通过多个像素中的每一个。

公开(公告)号：US20120015143A1

公开(公告)日：2012-01-19

申请号：US13067710

申请日：2011-06-22

申请人： Jiunn-Yih Chyan ,  Jer-Liang Yeh ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Jiunn-Yih Chyan ,  Jer-Liang Yeh ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： B32B3/00 ,  C23F1/00 ,  H01L21/467 ,  H01L21/308 ,  B82Y40/00

CPC分类号： C30B29/60 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02521 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3086 ,  Y10T428/24355

摘要： The invention provides an epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, the crystalline substrate has an epitaxial surface which is nano-rugged and non-patterned. The epitaxial substrate according to the invention thereon benefits a compound semiconductor material in growth of epitaxy films with excellent quality. Moreover, the fabrication of the epitaxial substrate according to the invention has advantages of low cost and rapid production.

摘要翻译： 本发明提供一种外延衬底及其制造。 根据本发明的外延衬底包括晶体衬底。 特别地，晶体衬底具有纳米凹凸和非图案化的外延表面。 根据本发明的外延衬底有益于化合物半导体材料在外延薄膜生长中的优良品质。 此外，根据本发明的外延衬底的制造具有成本低且生产快速的优点。

公开(公告)号：US08203136B2

公开(公告)日：2012-06-19

申请号：US13024226

申请日：2011-02-09

申请人： Jiunn-Yih Chyan ,  Hung-Chi Chien ,  Kun-Lin Yang ,  Wen-Ching Hsu

发明人： Jiunn-Yih Chyan ,  Hung-Chi Chien ,  Kun-Lin Yang ,  Wen-Ching Hsu

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  C30B25/186 ,  C30B29/403 ,  H01L33/12 ,  Y10S977/811 ,  Y10T428/24355 ,  Y10T428/24612

摘要： The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.

摘要翻译： 本发明提供外延衬底，使用这种外延衬底的半导体发光器件及其制造。 根据本发明的外延衬底包括晶体衬底。 特别地，其上的晶体衬底的晶体表面具有多个随机布置的纳米棒。 多个纳米棒由不同于形成晶体衬底的材料的氧化物形成。

公开(公告)号：US09051664B2

公开(公告)日：2015-06-09

申请号：US13353488

申请日：2012-01-19

申请人： Jiunn-Yih Chyan ,  Jian-Jhih Li ,  Kun-Lin Yang ,  Wen-Ching Hsu

发明人： Jiunn-Yih Chyan ,  Jian-Jhih Li ,  Kun-Lin Yang ,  Wen-Ching Hsu

IPC分类号： H01L21/306 ,  B82Y30/00 ,  H01L29/30 ,  C30B33/10 ,  C30B29/06 ,  C30B33/00

CPC分类号： H01L29/16 ,  C30B29/06 ,  C30B33/00 ,  C30B33/10 ,  Y10T428/24777

摘要： The instant disclosure relates to a nanostructuring process for an ingot surface prior to the slicing operation. A surface treatment step is performed for at least one surface of the ingot in forming a nanostructure layer thereon. The nanostructure layer is capable of enhancing the mechanical strength of the ingot surface to reduce the chipping ratio of the wafer during slicing.

摘要翻译： 本公开涉及在切片操作之前的锭表面的纳米结构化方法。 在其上形成纳米结构层的锭的至少一个表面进行表面处理步骤。 纳米结构层能够增强锭表面的机械强度，以降低切片期间晶片的切屑比。

公开(公告)号：US20120112158A1

公开(公告)日：2012-05-10

申请号：US13024226

申请日：2011-02-09

申请人： Jiunn-Yih Chyan ,  Hung-Chi Chien ,  Kun-Lin Yang ,  Wen-Ching Hsu

发明人： Jiunn-Yih Chyan ,  Hung-Chi Chien ,  Kun-Lin Yang ,  Wen-Ching Hsu

IPC分类号： H01L33/06 ,  H01L33/28 ,  B32B3/00 ,  C30B1/10 ,  B32B3/30

CPC分类号： H01L33/007 ,  C30B25/186 ,  C30B29/403 ,  H01L33/12 ,  Y10S977/811 ,  Y10T428/24355 ,  Y10T428/24612

摘要： The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.

摘要翻译： 本发明提供外延衬底，使用这种外延衬底的半导体发光器件及其制造。 根据本发明的外延衬底包括晶体衬底。 特别地，其上的晶体衬底的晶体表面具有多个随机布置的纳米棒。 多个纳米棒由不同于形成晶体衬底的材料的氧化物形成。