公开(公告)号：US20070257283A1

公开(公告)日：2007-11-08

申请号：US11416875

申请日：2006-05-03

申请人： Jiunn-Yih Chyan ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Jiunn-Yih Chyan ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/113

CPC分类号： H01L31/1085 ,  H01L27/14621 ,  H01L27/14625 ,  H01L31/02327

摘要： An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.

摘要翻译： 图像传感器装置包括具有感光区域的半导体衬底和嵌入衬底内的第一和第二电极。 第一和第二电极形成狭缝阵列，狭缝阵列被配置为允许光的波长通过光感测区域。 一种用于制造图像传感器的方法包括提供半导体衬底，在半导体衬底上形成多个像素，以及形成嵌入多个像素内的多个狭缝。 多个狭缝被配置为允许光的波长通过多个像素中的每一个。

公开(公告)号：US08053853B2

公开(公告)日：2011-11-08

申请号：US11416875

申请日：2006-05-03

申请人： Jiunn-Yih Chyan ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Jiunn-Yih Chyan ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/113

CPC分类号： H01L31/1085 ,  H01L27/14621 ,  H01L27/14625 ,  H01L31/02327

摘要： An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.

摘要翻译： 图像传感器装置包括具有感光区域的半导体衬底和嵌入衬底内的第一和第二电极。 第一和第二电极形成狭缝阵列，狭缝阵列被配置为允许光的波长通过光感测区域。 一种用于制造图像传感器的方法包括提供半导体衬底，在半导体衬底上形成多个像素，以及形成嵌入多个像素内的多个狭缝。 多个狭缝被配置为允许光的波长通过多个像素中的每一个。

公开(公告)号：US07863067B2

公开(公告)日：2011-01-04

申请号：US11686108

申请日：2007-03-14

申请人： Gwo-Yuh Shiau ,  Ming Chyi Liu ,  Tzu-Hsuan Hsu ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Ming Chyi Liu ,  Tzu-Hsuan Hsu ,  Chia-Shiung Tsai

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  H01L27/1464 ,  H01L27/14683

摘要： The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one imaging sensor is located adjacent the first surface, activating a dopant layer in the semiconductor substrate adjacent the second surface using a localized annealing process, and etching the dopant layer.

摘要翻译： 本公开提供一种制造半导体器件的方法，包括提供包括第一表面和第二表面的半导体衬底，其中至少一个成像传感器位于第一表面附近，激活邻近第二表面的半导体衬底中的掺杂剂层 使用局部退火工艺，并蚀刻掺杂剂层。

公开(公告)号：US20080194076A1

公开(公告)日：2008-08-14

申请号：US11673652

申请日：2007-02-12

申请人： Fa-Yuan Chang ,  Tsung-Mu Lai ,  Kai-Chih Liang ,  Hua-Shu Wu ,  Chin-Hsiung Ho ,  Gwo-Yuh Shiau ,  Chu-Wei Chang ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Chia-Shiung Tsai ,  Nick Y. M. Shen ,  Ching-Chung Pai

发明人： Fa-Yuan Chang ,  Tsung-Mu Lai ,  Kai-Chih Liang ,  Hua-Shu Wu ,  Chin-Hsiung Ho ,  Gwo-Yuh Shiau ,  Chu-Wei Chang ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Chia-Shiung Tsai ,  Nick Y. M. Shen ,  Ching-Chung Pai

IPC分类号： H01L21/98

CPC分类号： H01L23/585 ,  B81C1/0038 ,  B81C1/00611 ,  B81C2201/0125 ,  H01L21/31053 ,  H01L21/31056 ,  H01L27/1464 ,  H01L27/14687 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

摘要： The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a top metal layer on a first substrate, in which the top metal layer has a plurality of interconnect features and a first dummy feature; forming a first dielectric layer over the top metal layer; etching the first dielectric layer in a target region substantially vertically aligned to the plurality of interconnect features and the first dummy feature of the top metal layer; performing a chemical mechanical polishing (CMP) process over the first dielectric layer; and thereafter bonding the first substrate to a second substrate.

摘要翻译： 本公开提供了一种制造微电子器件的方法。 该方法包括在第一衬底上形成顶部金属层，其中顶部金属层具有多个互连特征和第一虚拟特征; 在顶部金属层上形成第一介电层; 在与多个互连特征和顶部金属层的第一虚拟特征基本上垂直对准的目标区域中蚀刻第一介电层; 在第一介电层上进行化学机械抛光（CMP）工艺; 然后将第一基板接合到第二基板。

公开(公告)号：US07144773B1

公开(公告)日：2006-12-05

申请号：US11141902

申请日：2005-06-01

申请人： Shih-Chang Liu ,  Chi-Hsin Lo ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Shih-Chang Liu ,  Chi-Hsin Lo ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H04L21/336 ,  H04L21/8242 ,  H04L29/788 ,  H04L29/76

CPC分类号： H01L21/76224 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521

摘要： A method for forming a split gate flash device is provided. In one embodiment, a semiconductor substrate with a dielectric layer formed thereover is provided. A conductor layer is formed overlying the dielectric layer. A masking layer is deposited overlying the conductor layer. A light sensitive layer is formed overlying the masking layer. The light sensitive layer is patterned and etched to form a pattern of openings therein. The masking layer and the conductor layer are etched according to the pattern of openings in the light sensitive layer. The conductor layer is etched at the outer surface area between the conductor layer and the dielectric layer to form undercuts. The dielectric layer is etched to form a notch profile at the outer surface area between the conductor layer and the dielectric layer and portions of the substrate are etched to form a plurality of trenches. An isolation layer is filled over the plurality of trenches and the masking layer. The masking layer and portions of the conductor layer and isolation layer are etched away, wherein a portion of the isolation layer is preserved in the notch profile.

摘要翻译： 提供了一种用于形成分离栅极闪光装置的方法。 在一个实施例中，提供了其上形成介电层的半导体衬底。 形成覆盖在电介质层上的导体层。 掩蔽层沉积在导体层上。 形成覆盖掩模层的光敏层。 对感光层进行图案化和蚀刻以在其中形成开口图案。 掩模层和导体层根据光敏层中的开口图案进行蚀刻。 在导体层和电介质层之间的外表面区域处蚀刻导体层以形成底切。 蚀刻电介质层以在导体层和电介质层之间的外表面区域形成切口轮廓，并且蚀刻衬底的部分以形成多个沟槽。 隔离层填充在多个沟槽和掩蔽层上。 掩模层和导体层和隔离层的部分被蚀刻掉，其中隔离层的一部分保留在凹口轮廓中。

公开(公告)号：US20100151615A1

公开(公告)日：2010-06-17

申请号：US12710441

申请日：2010-02-23

申请人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

IPC分类号： H01L31/18

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

摘要： Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

摘要翻译： 提供了图像传感器装置及其制造方法。 图像传感器装置的示例性实施例包括支撑衬底。 在支撑衬底上形成钝化结构。 在钝化结构上形成互连结构。 第一半导体层形成在互连结构上，具有第一和第二表面，其中第一和第二表面是相对的表面。 至少一个感光装置从其第一表面形成在第一半导体层之上/之中。 滤色器层从其第二表面形成在第一半导体层上。 在滤色器层上形成至少一个微透镜。

公开(公告)号：US20090020842A1

公开(公告)日：2009-01-22

申请号：US11778183

申请日：2007-07-16

申请人： Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/00

CPC分类号： H01L27/1463 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2224/04042 ,  H01L2924/13091 ,  H01L2924/00

摘要： The present disclosure provide a microelectronic device. The microelectronic device includes a sensing element formed in the semiconductor substrate; a trench isolation feature formed in the semiconductor substrate; a bonding pad formed at least partially in the trench isolation feature; and interconnect features formed over the sensing element and the trench isolation feature, being coupled to the sensing element and the bonding pad, and isolated from each other by interlayer dielectric.

摘要翻译： 本公开提供了一种微电子器件。 微电子器件包括形成在半导体衬底中的感测元件; 形成在半导体衬底中的沟槽隔离特征; 至少部分地形成在所述沟槽隔离特征中的接合焊盘; 以及形成在感测元件上的互连特征和沟槽隔离特征，耦合到感测元件和接合焊盘，并且通过层间电介质彼此隔离。

公开(公告)号：US20080061330A1

公开(公告)日：2008-03-13

申请号：US11531290

申请日：2006-09-13

申请人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

IPC分类号： H01L31/062

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

摘要： Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

摘要翻译： 提供了图像传感器装置及其制造方法。 图像传感器装置的示例性实施例包括支撑衬底。 在支撑衬底上形成钝化结构。 在钝化结构上形成互连结构。 第一半导体层形成在互连结构上，具有第一和第二表面，其中第一和第二表面是相对的表面。 至少一个感光装置从其第一表面形成在第一半导体层之上/之中。 滤色器层从其第二表面形成在第一半导体层上。 在滤色器层上形成至少一个微透镜。

公开(公告)号：US20050274968A1

公开(公告)日：2005-12-15

申请号：US10982978

申请日：2004-11-05

申请人： Ching-Sen Kuo ,  Feng-Jia Shiu ,  Gwo-Yuh Shiau ,  Jieh-Jang Chen ,  Shih-Chi Fu ,  Chien Tseng ,  Chia-Shiung Tsai ,  Yuan-Hung Liu ,  Yeur-Luen Tu ,  Chih-Ta Wu ,  Chi-Hsin Lo

发明人： Ching-Sen Kuo ,  Feng-Jia Shiu ,  Gwo-Yuh Shiau ,  Jieh-Jang Chen ,  Shih-Chi Fu ,  Chien Tseng ,  Chia-Shiung Tsai ,  Yuan-Hung Liu ,  Yeur-Luen Tu ,  Chih-Ta Wu ,  Chi-Hsin Lo

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/22 ,  H01L29/227 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L33/00 ,  H01L47/02

CPC分类号： H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.

摘要翻译： 图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。 内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。 内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。 可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。 热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。 感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

公开(公告)号：US08710560B2

公开(公告)日：2014-04-29

申请号：US11835814

申请日：2007-08-08

申请人： Yuan-Chih Hsieh ,  Shih-Chang Liu ,  Shih-Chi Fu ,  Tzu-Hsuan Hsu ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Yuan-Chih Hsieh ,  Shih-Chang Liu ,  Shih-Chi Fu ,  Tzu-Hsuan Hsu ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/062

CPC分类号： H01L27/14643 ,  H01L24/05 ,  H01L27/14636 ,  H01L2224/05556 ,  H01L2924/12043 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a front surface and a back surface, elements formed on the substrate, interconnect metal layers formed over the front surface of the substrate, including a topmost interconnect metal layer, an inter-metal dielectric for insulating each of the plurality of interconnect metal layers, and a bonding pad disposed within the inter-metal dielectric, the bonding pad in contact with one of the interconnect metal layers other than the topmost interconnect metal layer.

摘要翻译： 半导体器件包括具有前表面和后表面的半导体衬底，形成在衬底上的元件，形成在衬底的前表面上的互连金属层，包括最上面的互连金属层，用于绝缘的金属间电介质 所述多个互连金属层和设置在所述金属间电介质内的接合焊盘，所述接合焊盘与所述互连金属层中的一个互连金属层之外的最上面的互连金属层接触。