摘要:
Optoelectronic circuit in a semiconductor component having a branching waveguide. A respective optical amplifier constructed as a diode is integrated in each branch of this waveguide and the doping of the materials surrounding the active layer of these diodes is selected such that each diode can also be separately operated as a photodetector without transverse currents arising between the diodes.
摘要:
A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser.
摘要:
A semiconductor light source with low photon absorption is not only structurally simple, but is also easy to produce. The light source is formed of a layer stack with a total thickness of 50 .mu.m which is secured at a separate carrier body and connected to contacts of the carrier body with this thickness alone i.e. without intimate connection to a substrate, by a separate connecting structure. The diode is advantageous for realizing IREDs and LEDs of high optical performance.
摘要:
A laser diode and a method of making the same, the diode having a semiconductor substrate, and a plurality of strip shaped heterogenous layers sequentially arranged vertically on the substrate, the heterogenous layers between them providing a strip shaped laser active zone. Additional doped semiconductor structures having a lower refractive index than the heterogenous layers are disposed laterally adjacent to the strip shaped heterogenous layers. A zone adjacent to the additional structure exists laterally of the heterogenous layers, this zone having a conductivity type different from that of the additional structures, and having a conductivity of the lowermost of the heterogenous layers, thereby providing a blocking pn junction at the sides of the heterogenous layers at the boundary between the lowermost layer and the additional structures. The zone has its dopant confined to the direction of the boundary surface between the adjacent zone and the adjoining additional structures, the dopant being diffused only from the boundary surface between the adjacent zone and the additional structures, and not being diffused from the additional structures.
摘要:
An optoelectronic device for outfeed and infeed of radiation into and out of a waveguide having the waveguide disposed on a substrate and provided with a mirror for reflecting the light through the substrate. The device includes at least a plano-convex lens being integrated on a surface of the substrate lying opposite the waveguide. In one embodiment, a second substrate is secured on the first substrate and one of the substrates has a recess for receiving the lens and the second substrate can have a recess aligned with the lens for receiving an end of an optical fiber.
摘要:
A light-emitting diode has a lens secured in self-adjusted fashion to a mesa surface of a semiconductor body by means of adhesive. The mesa surface is substantially perpendicular and centered with an emission axis of the light-emitting diode. Preferably, the lens is spherical and the mesa surface has a diameter comparable to or smaller than a diameter of the lens.
摘要:
A device for simultaneously producing a plurality of substrate disks each having a plurality of different layers by a liquid phase epitaxy as each substrate disk is moved sequentially through different melts contained in the liquid phase characterized by a first unit having tongues slidably received therein and a plurality of chambers spaced along the direction of sliding of said tongues, a second unit having a crucible for each of said chambers being disposed for relatively movement on the first unit from a position with the crucible out of communication with the chamber to a position in communication for transferring the melt from the crucible to the chamber and each of the said tongues having aligned recesses for receiving the substrate disk so that a row of substrate disks can be passed from one chamber to the next following chamber so that the disks in each row receive epitaxial layers sequentially.
摘要:
A laser transmitter arrangement includes a plurality of laterally coupled semiconductor lasers along with drive components integrated on a single semiconductor body. The drive components include drop resistors, an inductance element, a capacitance element and are all applied to an insulating layer on the surface of the semiconductor body. The resistors are formed by interconnects, while the inductance element is a spiral interconnect and the capacitance element is formed by interconnects lying over one another with an intervening dielectric material. Electrical connection from contact surfaces of the semiconductor lasers to the drive components is provided by the interconnects. The semiconductor body also contains external contacting surfaces for a DC source and for a high frequency source.
摘要:
A light-emitting diode has a lens secured in self-adjusted fashion to a mesa surface of a semiconductor body by means of adhesive. The mesa surface is substantially perpendicular and centered with an emission axis of the light-emitting diode. Preferably, the lens is spherical and the mesa surface has a diameter comparable to or smaller than a diameter of the lens.
摘要:
An arrangement of two coupled laser diodes comprises first and second two-layer structures, each structure having a strip-shaped laser-active zone, and a middle layer. The first and second two-layer structures are symmetrically constructed relative to the middle layer at opposite sides thereof and directly across from each other so that the strip-shaped laser-active zones in each of the two-layer structures are positioned at a defined spacing directly across from each other and in symmetrical manner with respect to the middle layer. The middle layer is epitaxially deposited with a precisely dimensioned thickness relative to the two coupled laser diodes being employed.