Optoelectronic circuit with diodes and waveguides
    1.
    发明授权
    Optoelectronic circuit with diodes and waveguides 失效
    具有二极管和波导的光电路

    公开(公告)号:US5065207A

    公开(公告)日:1991-11-12

    申请号:US655138

    申请日:1991-02-05

    申请人: Jochen Heinen

    发明人: Jochen Heinen

    CPC分类号: G02B6/125

    摘要: Optoelectronic circuit in a semiconductor component having a branching waveguide. A respective optical amplifier constructed as a diode is integrated in each branch of this waveguide and the doping of the materials surrounding the active layer of these diodes is selected such that each diode can also be separately operated as a photodetector without transverse currents arising between the diodes.

    摘要翻译: 具有分支波导的半导体元件中的光电子电路。 构成二极管的相应的光放大器集成在该波导的每个分支中,并且选择围绕这些二极管的有源层的材料的掺杂,使得每个二极管也可以单独地作为光电检测器工作,而不会在二极管之间产生横向电流 。

    Tunable semiconductor laser
    2.
    发明授权
    Tunable semiconductor laser 失效
    可调谐半导体激光器

    公开(公告)号:US5008893A

    公开(公告)日:1991-04-16

    申请号:US480825

    申请日:1990-02-15

    CPC分类号: H01S5/06206 H01S5/12

    摘要: A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser.

    摘要翻译: 一种可调谐半导体激光器,其形成在基板2上,该基板2在一个表面上具有第一触点14,并且在相对表面上具有第三触点16,以便通过阻挡层提供侧向限制于激光活性条纹的工作电流 并且在脊波导11,12,13上包括第二接触15,以便将电荷载流子注入安装在有源层6附近的调谐层9中,并通过高度掺杂的中心层10与有源层分离,以便 以允许调谐激光。

    Semiconductor light source formed of layer stack with total thickness of
50 microns
    3.
    发明授权
    Semiconductor light source formed of layer stack with total thickness of 50 microns 有权
    半导体光源由层叠堆叠形成,总厚度为50微米

    公开(公告)号:US6111272A

    公开(公告)日:2000-08-29

    申请号:US162689

    申请日:1998-09-28

    申请人: Jochen Heinen

    发明人: Jochen Heinen

    摘要: A semiconductor light source with low photon absorption is not only structurally simple, but is also easy to produce. The light source is formed of a layer stack with a total thickness of 50 .mu.m which is secured at a separate carrier body and connected to contacts of the carrier body with this thickness alone i.e. without intimate connection to a substrate, by a separate connecting structure. The diode is advantageous for realizing IREDs and LEDs of high optical performance.

    摘要翻译: 低光子吸收的半导体光源不仅结构简单,而且易于制造。 光源由总层厚度为50μm的层叠层形成,其固定在单独的载体上,并且以这种厚度单独地连接到载体主体的触点,即不与基底紧密连接,通过单独的连接结构 。 该二极管有利于实现高光学性能的IRED和LED。

    Semiconductor laser diode with buried hetero-structure
    4.
    发明授权
    Semiconductor laser diode with buried hetero-structure 失效
    具有埋入异质结构的半导体激光二极管

    公开(公告)号:US4683574A

    公开(公告)日:1987-07-28

    申请号:US775399

    申请日:1985-09-12

    申请人: Jochen Heinen

    发明人: Jochen Heinen

    摘要: A laser diode and a method of making the same, the diode having a semiconductor substrate, and a plurality of strip shaped heterogenous layers sequentially arranged vertically on the substrate, the heterogenous layers between them providing a strip shaped laser active zone. Additional doped semiconductor structures having a lower refractive index than the heterogenous layers are disposed laterally adjacent to the strip shaped heterogenous layers. A zone adjacent to the additional structure exists laterally of the heterogenous layers, this zone having a conductivity type different from that of the additional structures, and having a conductivity of the lowermost of the heterogenous layers, thereby providing a blocking pn junction at the sides of the heterogenous layers at the boundary between the lowermost layer and the additional structures. The zone has its dopant confined to the direction of the boundary surface between the adjacent zone and the adjoining additional structures, the dopant being diffused only from the boundary surface between the adjacent zone and the additional structures, and not being diffused from the additional structures.

    摘要翻译: 一种激光二极管及其制造方法,二极管具有半导体衬底,以及多个条状异相层,其顺序地布置在衬底上,其间的异质层提供带状激光活性区。 具有比异质层更低的折射率的附加掺杂半导体结构被布置成横向邻近带状异种层。 与附加结构相邻的区域在异质层的侧面存在,该区域具有与附加结构的导电类型不同的导电类型,并且具有最外层的非均匀层的导电性,从而在 在最下层和附加结构之间的边界处的异质层。 该区域的掺杂剂限制在相邻区域和相邻附加结构之间的边界表面的方向上,掺杂剂仅从相邻区域和附加结构之间的边界表面扩散,并且不会从附加结构扩散。

    Optoelectronic device for outfeed and infeed of radiation
    5.
    发明授权
    Optoelectronic device for outfeed and infeed of radiation 失效
    用于外加和辐射的光电装置

    公开(公告)号:US5195150A

    公开(公告)日:1993-03-16

    申请号:US826433

    申请日:1992-01-27

    摘要: An optoelectronic device for outfeed and infeed of radiation into and out of a waveguide having the waveguide disposed on a substrate and provided with a mirror for reflecting the light through the substrate. The device includes at least a plano-convex lens being integrated on a surface of the substrate lying opposite the waveguide. In one embodiment, a second substrate is secured on the first substrate and one of the substrates has a recess for receiving the lens and the second substrate can have a recess aligned with the lens for receiving an end of an optical fiber.

    摘要翻译: 一种用于辐射进出波导的光电子装置,其具有布置在基板上的波导,并且设置有用于将光反射通过基板的反射镜。 该装置包括至少一个平凸透镜,其集成在与波导相对的基板的表面上。 在一个实施例中,第二基板被固定在第一基板上,并且其中一个基板具有用于接收透镜的凹部,并且第二基板可以具有与透镜对准的凹部,用于接收光纤的端部。

    Method of making a light-emitting-diode (led) with spherical lens
    6.
    发明授权
    Method of making a light-emitting-diode (led) with spherical lens 失效
    制造具有球面透镜的发光二极管(led)的方法

    公开(公告)号:US4740259A

    公开(公告)日:1988-04-26

    申请号:US906900

    申请日:1986-09-15

    申请人: Jochen Heinen

    发明人: Jochen Heinen

    摘要: A light-emitting diode has a lens secured in self-adjusted fashion to a mesa surface of a semiconductor body by means of adhesive. The mesa surface is substantially perpendicular and centered with an emission axis of the light-emitting diode. Preferably, the lens is spherical and the mesa surface has a diameter comparable to or smaller than a diameter of the lens.

    摘要翻译: 发光二极管具有通过粘合剂以自调节方式固定到半导体主体的台面的透镜。 台面表面基本垂直并且与发光二极管的发射轴对准。 优选地,透镜是球形的,并且台面表面具有与透镜的直径相当或者更小的直径。

    Device for epitaxial depositing layers from a liquid phase
    7.
    发明授权
    Device for epitaxial depositing layers from a liquid phase 失效
    用于从液相外延沉积层的装置

    公开(公告)号:US4406245A

    公开(公告)日:1983-09-27

    申请号:US298594

    申请日:1981-09-02

    申请人: Jochen Heinen

    发明人: Jochen Heinen

    CPC分类号: C30B19/063

    摘要: A device for simultaneously producing a plurality of substrate disks each having a plurality of different layers by a liquid phase epitaxy as each substrate disk is moved sequentially through different melts contained in the liquid phase characterized by a first unit having tongues slidably received therein and a plurality of chambers spaced along the direction of sliding of said tongues, a second unit having a crucible for each of said chambers being disposed for relatively movement on the first unit from a position with the crucible out of communication with the chamber to a position in communication for transferring the melt from the crucible to the chamber and each of the said tongues having aligned recesses for receiving the substrate disk so that a row of substrate disks can be passed from one chamber to the next following chamber so that the disks in each row receive epitaxial layers sequentially.

    摘要翻译: 一种用于通过液相外延同时制造多个基板盘的装置,每个基板盘顺序地通过液相中所含的不同熔体而移动,其特征在于具有可滑动地容纳在其中的舌片的第一单元, 沿着所述舌片的滑动方向间隔开的腔室,具有用于每个所述腔室的坩埚的第二单元被设置成用于相对于所述第一单元上的相对运动,所述坩埚与所述坩埚脱离与所述腔室连通的位置, 将熔体从坩埚转移到室,并且每个所述舌部具有对准的凹部,用于接收基板盘,使得一排基板盘可以从一个室传递到下一个后续室,使得每行中的盘接收外延 层顺序。

    Laser transmitter arrangement
    8.
    发明授权
    Laser transmitter arrangement 失效
    激光发射器布置

    公开(公告)号:US4845723A

    公开(公告)日:1989-07-04

    申请号:US158749

    申请日:1988-02-22

    摘要: A laser transmitter arrangement includes a plurality of laterally coupled semiconductor lasers along with drive components integrated on a single semiconductor body. The drive components include drop resistors, an inductance element, a capacitance element and are all applied to an insulating layer on the surface of the semiconductor body. The resistors are formed by interconnects, while the inductance element is a spiral interconnect and the capacitance element is formed by interconnects lying over one another with an intervening dielectric material. Electrical connection from contact surfaces of the semiconductor lasers to the drive components is provided by the interconnects. The semiconductor body also contains external contacting surfaces for a DC source and for a high frequency source.

    摘要翻译: 激光发射器装置包括多个横向耦合的半导体激光器以及集成在单个半导体主体上的驱动部件。 驱动部件包括分接电阻器,电感元件,电容元件,并且都被施加到半导体主体的表面上的绝缘层。 电阻器由互连形成,而电感元件是螺旋形互连,并且电容元件由互相放置在彼此之间并具有中间介电材料形成。 通过互连提供从半导体激光器的接触表面到驱动部件的电连接。 半导体主体还包含用于DC源和高频源的外部接触表面。

    Light-emitting-diode (LED) with spherical lens
    9.
    发明授权
    Light-emitting-diode (LED) with spherical lens 失效
    发光二极管(LED),带球面透镜

    公开(公告)号:US4841344A

    公开(公告)日:1989-06-20

    申请号:US129178

    申请日:1987-12-07

    申请人: Jochen Heinen

    发明人: Jochen Heinen

    摘要: A light-emitting diode has a lens secured in self-adjusted fashion to a mesa surface of a semiconductor body by means of adhesive. The mesa surface is substantially perpendicular and centered with an emission axis of the light-emitting diode. Preferably, the lens is spherical and the mesa surface has a diameter comparable to or smaller than a diameter of the lens.

    摘要翻译: 发光二极管具有通过粘合剂以自调节方式固定到半导体主体的台面的透镜。 台面表面基本垂直并且与发光二极管的发射轴对准。 优选地,透镜是球形的,并且台面表面具有与透镜的直径相当或者更小的直径。

    Coupled laser diode arrangement
    10.
    发明授权
    Coupled laser diode arrangement 失效
    耦合激光二极管布置

    公开(公告)号:US4742525A

    公开(公告)日:1988-05-03

    申请号:US773018

    申请日:1985-09-06

    IPC分类号: H01S5/00 H01S5/40 H01S3/18

    CPC分类号: H01S5/4043

    摘要: An arrangement of two coupled laser diodes comprises first and second two-layer structures, each structure having a strip-shaped laser-active zone, and a middle layer. The first and second two-layer structures are symmetrically constructed relative to the middle layer at opposite sides thereof and directly across from each other so that the strip-shaped laser-active zones in each of the two-layer structures are positioned at a defined spacing directly across from each other and in symmetrical manner with respect to the middle layer. The middle layer is epitaxially deposited with a precisely dimensioned thickness relative to the two coupled laser diodes being employed.

    摘要翻译: 两个耦合激光二极管的布置包括第一和第二两层结构,每个结构具有带状激光活性区和中间层。 第一和第二两层结构相对于中间层在其相对侧处对称地构造并且彼此直接相交,使得两层结构中的每一个中的带状激光活性区域以限定的间隔 直接相对于中间层相对并且以对称的方式。 相对于所采用的两个耦合的激光二极管,中间层被外延沉积成具有精确尺寸的厚度。