公开(公告)号：US20110068419A1

公开(公告)日：2011-03-24

申请号：US12873912

申请日：2010-09-01

申请人： Jochen Reinmuth ,  Jens Frey ,  Christian Bierhoff

发明人： Jochen Reinmuth ,  Jens Frey ,  Christian Bierhoff

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00039

摘要： A micromechanical system includes a substrate, a first conductive layer situated above the substrate and a second conductive layer situated above the first conductive layer. The first conductive layer and the second conductive layer are conductively interconnected by a connecting element. The connecting element has a conductive edge surrounding a nonconductive region.

摘要翻译： 微机械系统包括衬底，位于衬底上方的第一导电层和位于第一导电层上方的第二导电层。 第一导电层和第二导电层通过连接元件导电互连。 连接元件具有围绕非导电区域的导电边缘。

公开(公告)号：US09153523B2

公开(公告)日：2015-10-06

申请号：US14307108

申请日：2014-06-17

申请人： Heribert Weber ,  Hartmut Kueppers ,  Jochen Reinmuth ,  Neil Davies ,  Jens Frey

发明人： Heribert Weber ,  Hartmut Kueppers ,  Jochen Reinmuth ,  Neil Davies ,  Jens Frey

IPC分类号： H01L23/52 ,  H01L23/48 ,  B81C3/00

CPC分类号： H01L23/481 ,  B81C1/00238 ,  B81C3/001 ,  B81C2203/0109 ,  B81C2203/0792 ,  G01C19/5783 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an ASIC element, vias are integrated into the CMOS processing of an ASIC substrate. The ASIC element includes an active front side in which the circuit functions are implemented. The at least one via is intended to establish an electrical connection between the active front side and the rear side of the element. The front side of the via is defined by at least one front-side trench which is completely filled, and the rear side is defined by at least one rear-side trench which is not completely filled. The rear-side trench opens into the filled front-side trench.

摘要翻译： 在ASIC元件中，通孔被集成到ASIC基板的CMOS处理中。 ASIC元件包括其中实现电路功能的主动正面。 该至少一个通孔旨在在元件的主动前侧和后侧之间建立电连接。 通孔的前侧由完全填充的至少一个前侧沟槽限定，并且后侧由未完全填充的至少一个后侧沟槽限定。 后侧沟槽穿过填充的前侧沟槽。

公开(公告)号：US20140117472A1

公开(公告)日：2014-05-01

申请号：US14061887

申请日：2013-10-24

申请人： Julian Gonska ,  Jochen Reinmuth ,  Kathrin Gutsche ,  Jens Frey ,  Heribert Weber

发明人： Julian Gonska ,  Jochen Reinmuth ,  Kathrin Gutsche ,  Jens Frey ,  Heribert Weber

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81C1/00285 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/096 ,  B81C2203/0118 ,  B81C2203/035

摘要： A micromechanical component includes a first space in which a first sensor is situated and a second space in which a second sensor is situated, different pressures prevailing in the first and second spaces, one of the two spaces extending via a third space to a first lattice structure which is situated in an edge region of the component and is essentially hermetically sealed.

摘要翻译： 微机械部件包括第一传感器所在的第一空间和第二传感器所在的第二空间，在第一和第二空间中存在不同的压力，两个空间中的一个通过第三空间延伸到第一格子 结构位于组件的边缘区域中，并且基本上被气密地密封。

公开(公告)号：US09034757B2

公开(公告)日：2015-05-19

申请号：US13923035

申请日：2013-06-20

申请人： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

发明人： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

IPC分类号： H01L21/44 ,  H01L21/762 ,  H01L23/48 ,  B81B7/00 ,  B81C1/00 ,  H01L23/00

CPC分类号： H01L21/76224 ,  B81B7/007 ,  B81B2207/096 ,  B81C1/00095 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/05009 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2224/0231 ,  H01L2224/83 ,  H01L21/78 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for manufacturing a component having an electrical through-connection is described. The method includes the following steps: providing a semiconductor substrate having a front side and a back side opposite from the front side, producing an insulating trench, which annularly surrounds a contact area, on the front side of the semiconductor substrate, filling the insulating trench with an insulating material, producing an electrical contact structure on the front side of the semiconductor substrate by depositing an electrically conductive material in the contact area, removing the semiconductor material remaining in the contact area on the back side of the semiconductor substrate in order to produce a contact hole which opens up the bottom side of the contact structure, and depositing a metallic material in the contact hole in order to electrically connect the electrical contact structure to the back side of the semiconductor substrate.

摘要翻译： 描述了一种用于制造具有电穿通连接的部件的方法。 该方法包括以下步骤：提供具有与前侧相反的前侧和后侧的半导体衬底，在半导体衬底的正面上产生环形地包围接触区域的绝缘沟槽，填充绝缘沟槽 具有绝缘材料，通过在接触区域中沉积导电材料，在半导体衬底的正面上产生电接触结构，去除残留在半导体衬底背面接触区域中的半导体材料，以便产生 接触孔，其向开放接触结构的底侧开口，并且在接触孔中沉积金属材料，以将电接触结构电连接到半导体衬底的背面。

公开(公告)号：US09114978B2

公开(公告)日：2015-08-25

申请号：US13921419

申请日：2013-06-19

申请人： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

发明人： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

IPC分类号： H01L29/84 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC分类号： B81C1/00134 ,  B81B3/0018 ,  B81B7/007 ,  B81B2207/095

摘要： A method for manufacturing a component having an electrical through-connection includes: providing a semiconductor substrate having a front side and a back side opposite from the front side; producing, on the front side of the semiconductor substrate, an insulating trench which annularly surrounds a contact area; introducing an insulating material into the insulating trench; producing a contact hole on the front side of the semiconductor substrate by removing the semiconductor material surrounded by the insulating trench in the contact area; and depositing a metallic material in the contact hole.

摘要翻译： 一种用于制造具有电穿通连接的部件的方法包括：提供具有前侧和与前侧相对的后侧的半导体衬底; 在所述半导体衬底的前侧产生环形地围绕接触区域的绝缘沟槽; 将绝缘材料引入绝缘沟槽中; 通过去除由接触区域中的绝缘沟槽围绕的半导体材料，在半导体衬底的正面上产生接触孔; 以及在所述接触孔中沉积金属材料。

公开(公告)号：US09123716B2

公开(公告)日：2015-09-01

申请号：US13719799

申请日：2012-12-19

申请人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

发明人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

IPC分类号： H01L21/00 ,  H01L23/48 ,  H01L21/50 ,  H01L23/488 ,  H01L21/18 ,  B81C1/00 ,  H01L23/00

CPC分类号： H01L21/50 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/185 ,  H01L21/187 ,  H01L23/488 ,  H01L24/94 ,  H01L2224/83805 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/16251 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

摘要翻译： 一种用于接合两个硅衬底和两个硅衬底的对应系统的方法。 该方法包括：提供第一和第二硅衬底; 在第一硅衬底的第一接合表面上沉积具有0.1至5％铜含量的纯铝或铝 - 铜的第一接合层; 在所述第一接合表面上方或第二硅衬底的第二接合表面上方沉积锗的第二接合层; 随后接合第一和第二硅衬底，使得第一和第二接合表面彼此相对; 并且在第一硅衬底和第二硅衬底之间实现热处理步骤以形成铝锗或含有铝 - 锗的共晶结合层作为主要组分，最小含有铝并延伸到第一硅中的尖峰 衬底，至少形成在第一结合表面上。

公开(公告)号：US08647961B2

公开(公告)日：2014-02-11

申请号：US13198651

申请日：2011-08-04

申请人： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

发明人： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC分类号： H01L21/76

CPC分类号： H01L21/76898 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is described for filling cavities in wafers, the cavities being open to a predetermined surface of the wafer, including the following steps: applying a lacquer-like filling material to the predetermined surface of the wafer; heating the wafer at a first temperature; driving out gas bubbles enclosed in the filling material by heating the wafer under vacuum at a second temperature which is equal to or higher than the first temperature; and curing the filling material by heating the wafer at a third temperature which is higher than the second temperature. Furthermore, also described is a blind hole filled using such a method and general 3D cavities as well as a wafer having insulation trenches of a silicon via filled using such a method.

摘要翻译： 描述了一种用于在晶片中填充空腔的方法，空腔朝向晶片的预定表面开放，包括以下步骤：将漆状填充材料施加到晶片的预定表面; 在第一温度下加热晶片; 通过在等于或高于第一温度的第二温度下在真空下加热晶片来驱除封闭在填充材料中的气泡; 以及通过在高于第二温度的第三温度下加热晶片来固化填充材料。 此外，还描述了使用这种方法和一般3D空腔填充的盲孔以及具有使用这种方法填充的硅通孔的绝缘沟槽的晶片。

公开(公告)号：US09266720B2

公开(公告)日：2016-02-23

申请号：US14059202

申请日：2013-10-21

申请人： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner ,  Mirko Hattass ,  Daniel Christoph Meisel

发明人： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner ,  Mirko Hattass ,  Daniel Christoph Meisel

IPC分类号： B81C1/00

CPC分类号： B81C1/00246 ,  B81C1/0023 ,  B81C2203/075 ,  B81C2203/0771 ,  H01L2224/48463

摘要： A component has at least one MEMS element and at least one cap made of a semiconductor material. The cap, in addition to its mechanical function as a terminus of a cavity and protection of the micromechanical structure, is provided with an electrical functionality. The micromechanical structure of the MEMS element of the component is situated in a cavity between a carrier and the cap, and includes at least one structural element which is deflectable out of the component plane within the cavity. The cap includes at least one section extending over the entire thickness of the cap, which is electrically insulated from the adjoining semiconductor material in such a way that it may be electrically contacted independently from the remaining sections of the cap.

摘要翻译： 元件具有至少一个MEMS元件和由半导体材料制成的至少一个盖。 盖子除了作为空腔的终端的机械功能以及微机械结构的保护之外，还具有电功能。 元件的MEMS元件的微机械结构位于载体和盖之间的空腔中，并且包括至少一个结构元件，其可在空腔内偏离组件平面。 该帽包括至少一个在盖的整个厚度上延伸的部分，其与相邻的半导体材料电绝缘，使得其可以独立于帽的其余部分电接触。

公开(公告)号：US09040336B2

公开(公告)日：2015-05-26

申请号：US14058806

申请日：2013-10-21

申请人： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

发明人： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

IPC分类号： H01L21/00 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC分类号： B81C1/00015 ,  B81B3/0018 ,  B81B7/0058

摘要： A manufacturing method for a cap, for a hybrid vertically integrated component having a MEMS component a relatively large cavern volume having a low cavern internal pressure, and a reliable overload protection for the micromechanical structure of the MEMS component. A cap structure is produced in a flat cap substrate in a multistep anisotropic etching, and includes at least one mounting frame having at least one mounting surface and a stop structure, on the cap inner side, having at least one stop surface, the surface of the cap substrate being masked for the multistep anisotropic etching with at least two masking layers made of different materials, and the layouts of the masking layers and the number and duration of the etching steps being selected so that the mounting surface, the stop surface, and the cap inner side are situated at different surface levels of the cap structure.

摘要翻译： 一种用于具有MEMS部件的混合垂直集成部件的盖的制造方法，具有较低的洞穴内部压力的相对较大的洞穴体积以及用于MEMS部件的微机械结构的可靠的过载保护。 在多步骤各向异性蚀刻中，在平盖基板中制造盖结构，并且包括至少一个安装框架，该安装框架具有至少一个安装表面和止动结构，在盖内侧具有至少一个止动表面， 掩模基板被掩模用于具有由不同材料制成的至少两个掩模层的多步各向异性蚀刻，并且选择掩模层的布局以及蚀刻步骤的数量和持续时间，使得安装表面，止动表面和 帽内侧位于帽结构的不同表面水平处。

公开(公告)号：US08748998B2

公开(公告)日：2014-06-10

申请号：US13206024

申请日：2011-08-09

申请人： Jens Frey ,  Heribert Weber ,  Eckhard Graf

发明人： Jens Frey ,  Heribert Weber ,  Eckhard Graf

IPC分类号： H01L29/84

CPC分类号： G01P15/125 ,  B81B7/02 ,  B81B2207/07 ,  B81B2207/095 ,  B81B2207/096 ,  B81B2207/097 ,  B81C2203/0118 ,  B81C2203/035 ,  G01L9/0048 ,  G01L9/0052 ,  G01L9/0073 ,  G01L19/0076 ,  G01L19/0092 ,  G01P15/0802 ,  G01R33/0286

摘要： A sensor module includes a substrate system which has multiple substrates situated one on top of the other and connected in each case via a wafer bond connection. The substrate system includes at least one first sensor substrate and at least one second sensor substrate, the first sensor substrate having a first sensor structure and the second sensor substrate having a second sensor structure. The first and second sensor structures are designed for detecting different characteristics. At least the first sensor structure includes a micromechanical functional structure. Moreover, a method for manufacturing such a sensor module is disclosed.

摘要翻译： 传感器模块包括具有多个基板的基板系统，该基板一个在另一个之上并且通过晶片接合连接在每种情况下连接。 衬底系统包括至少一个第一传感器衬底和至少一个第二传感器衬底，第一传感器衬底具有第一传感器结构，第二传感器衬底具有第二传感器结构。 第一和第二传感器结构被设计用于检测不同的特性。 至少第一传感器结构包括微机械功能结构。 此外，公开了一种用于制造这种传感器模块的方法。