公开(公告)号：US20090075472A1

公开(公告)日：2009-03-19

申请号：US11857760

申请日：2007-09-19

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

摘要翻译： 提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。 等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。 以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽 用于形成线沟槽和通孔腔的离子蚀刻。 减少的线偏压对金属互连结构的电产量具有有益的影响。

公开(公告)号：US20120329269A1

公开(公告)日：2012-12-27

申请号：US13602119

申请日：2012-09-01

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

摘要翻译： 提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。 等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。 以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽 用于形成线沟槽和通孔腔的离子蚀刻。 减少的线偏压对金属互连结构的电产量具有有益的影响。

公开(公告)号：US08481423B2

公开(公告)日：2013-07-09

申请号：US11857760

申请日：2007-09-19

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

公开(公告)号：US08470706B2

公开(公告)日：2013-06-25

申请号：US13602119

申请日：2012-09-01

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

摘要翻译： 提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。 等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。 以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽 用于形成线沟槽和通孔腔的离子蚀刻。 减少的线偏压对金属互连结构的电产量具有有益的影响。

公开(公告)号：US08491987B2

公开(公告)日：2013-07-23

申请号：US12164647

申请日：2008-06-30

申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L23/58 ,  C08L53/00

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。

公开(公告)号：US07948051B2

公开(公告)日：2011-05-24

申请号：US12164599

申请日：2008-06-30

申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L21/70

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。

公开(公告)号：US20080265415A1

公开(公告)日：2008-10-30

申请号：US12164599

申请日：2008-06-30

申请人： Matthew E. Colburn ,  Stephen M. Gates ,  Jeffrey C. Hedrick ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E. Colburn ,  Stephen M. Gates ,  Jeffrey C. Hedrick ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L23/52

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

公开(公告)号：US06641899B1

公开(公告)日：2003-11-04

申请号：US10287935

申请日：2002-11-05

申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： B32B300

CPC分类号： H01L21/76849 ,  B82Y30/00 ,  G03F7/165 ,  H01L21/0331 ,  H01L21/31058 ,  H05K3/0079 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method. Compositions for practicing the method.

公开(公告)号：US07485341B2

公开(公告)日：2009-02-03

申请号：US10421306

申请日：2003-04-23

申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： B05D1/32

CPC分类号： H01L21/76849 ,  B82Y30/00 ,  G03F7/165 ,  H01L21/0331 ,  H01L21/31058 ,  H05K3/0079 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method. Compositions for practicing the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括将掩模材料的涂层施加到衬底上; 并且允许掩模材料的至少一部分优先地附着到现有图案的部分上。 该图案由具有第一原子组成的基底的第一组区域和具有不同于第一组成的第二原子组成的基底的第二组区域组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 掩模材料可以包含含有选择性结合图案部分的反应性接枝位点的聚合物。 掩蔽材料可以包括聚合物，其结合图案的部分以提供适于聚合起始的官能团层，具有适用于聚合扩展的官能团的反应性分子或反应性分子，其中反应性分子与 图案的部分产生具有反应性基团的层，其参与步骤生长聚合。 结构按照方法。 组合练习方法。

公开(公告)号：US20080265382A1

公开(公告)日：2008-10-30

申请号：US12164647

申请日：2008-06-30

申请人： Matthew E. Colburn ,  Stephen M. Gates ,  Jeffrey C. Hedrick ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E. Colburn ,  Stephen M. Gates ,  Jeffrey C. Hedrick ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L23/58 ,  C08L53/00

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。