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公开(公告)号：US4631105A
公开(公告)日：1986-12-23
申请号：US725802
申请日：1985-04-22
IPC分类号： H01J37/32 , B44C1/22 , C03C15/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/32633
摘要： Apparatus for processing semiconductor wafers and the like in an ionized gas plasma. A reaction chamber is divided into two separate regions, and driven and grounded electrodes are positioned outside the reaction chamber adjacent to respective ones of the regions. Wafers or other workpieces to be processed are placed in the region adjacent to the grounded electrode, and the gas to be ionized is introduced into the region adjacent to the driven electrode. The ionization of the gas is confined to the region adjacent to the driven electrode, and the active species pass through the perforated shield to the wafers or other workpieces.
摘要翻译： 用于在电离气体等离子体中处理半导体晶片等的装置。 反应室被分成两个分开的区域，并且驱动和接地的电极位于邻近各个区域的反应室外部。 要处理的晶片或其他工件被放置在与接地电极相邻的区域中，并且待离子化的气体被引入到与驱动电极相邻的区域中。 气体的电离被限制在与被驱动电极相邻的区域，并且活性物质通过穿孔屏蔽件到达晶片或其它工件。
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公开(公告)号：US07017514B1
公开(公告)日：2006-03-28
申请号：US10006100
申请日：2001-12-03
IPC分类号： C23C16/511 , C23F1/00 , H01L21/306
CPC分类号： C23C16/452 , C23C16/45565 , C23C16/511 , H01J37/32357 , H01J37/32633 , H01L21/31116
摘要： An apparatus for managing plasma in wafer processing operations is disclosed which includes a housing having an internal region defined by an inner wall. The housing has an input port for supplying a plasma into the housing at a first end and an output port at a second end. The apparatus includes a hollow tube contained in the internal region within the housing. The hollow tube is defined by a wall that extends between the first end and the second end and contains a plurality of orifices generating a plurality of fluid paths through the wall. A fluid input is included supplying fluid into the internal region of the housing. The supplied fluid is capable of passing through the plurality of orifices, and the plasma supplied through the input port is capable of being mixed within the hollow tube with the supplied fluid. The output port at the second end of the housing enables the mixed plasma and fluid supply to exit the housing.
摘要翻译： 公开了一种用于在晶片处理操作中管理等离子体的装置，其包括具有由内壁限定的内部区域的壳体。 壳体具有用于在第一端处将等离子体供应到壳体中的输入端口和在第二端处的输出端口。 该装置包括容纳在壳体内的内部区域中的中空管。 中空管由在第一端和第二端之间延伸的壁限定，并且包含多个孔，其产生穿过壁的多个流体路径。 流体输入包括将流体供应到壳体的内部区域。 所提供的流体能够通过多个孔，并且通过输入端口供应的等离子体能够与所提供的流体在中空管内混合。 壳体第二端的输出端口可使混合的等离子体和液体供应离开外壳。
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公开(公告)号：US5914278A
公开(公告)日：1999-06-22
申请号：US788601
申请日：1997-01-23
IPC分类号： H01L21/00
CPC分类号： H01L21/67017
摘要： A modular semiconductor wafer processing system comprises a chamber with a wafer support and gas manifold structure that supplies reactive gases through a showerhead delivery system to one side of a wafer-being-processed and that exhausts both the reactive gases and a non-reactive gas flow. The other side of the wafer is protected from the reactive gases by evenly delivering the non-reactive gases from a platen close to the wafer. The gap between the wafer and platen, and the choice of non-reactive gas and its flow rate are adjusted to optimize the protection afforded to the wafer's one side while still allowing, for example, the stripping of a silicon nitride film from the wafer's other side.
摘要翻译： 模块化半导体晶片处理系统包括具有晶片支撑件和气体歧管结构的腔室，其将反应性气体通过喷头输送系统提供给待处理的晶片的一侧，并且排出反应性气体和非反应性气体流 。 通过从靠近晶片的压板均匀输送非反应性气体来保护晶片的另一侧免受反应气体的影响。 调整晶片和压板之间的间隙以及非反应性气体的选择及其流速，以优化对晶片一侧的保护，同时还允许例如从晶片的另一侧剥离氮化硅膜 侧。
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公开(公告)号：US06867086B1
公开(公告)日：2005-03-15
申请号：US10389164
申请日：2003-03-13
IPC分类号： C23C16/04 , C23C16/40 , H01L21/311 , H01L21/316 , H01L21/762 , H01L21/338 , H01L21/31 , H01L21/336 , H01L21/76 , H01L21/439
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/402 , H01L21/02274 , H01L21/02301 , H01L21/31116 , H01L21/31612 , H01L21/76224
摘要： High density plasma chemical vapor deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots are provided. This deposition part of the process may involve the use of any suitable high density plasma chemical vapor deposition (HDP CVD) chemistry. The etch back part of the process involves an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality gap fill operations.
摘要翻译： 高密度等离子体化学气相沉积和回蚀工艺，其可以填充高纵横比（通常至少5:1，例如6:1），窄宽度（通常小于0.13微米，例如0.1微米或更小）的间隙，显着降低 提供了空隙或弱点的发生。 该方法的该沉积部分可以涉及使用任何合适的高密度等离子体化学气相沉积（HDP CVD）化学。 该方法的回蚀部分涉及包括各向异性干蚀刻以及各向同性干法蚀刻的集成多步骤（例如两步）程序。 在单一工具中的全部干沉积和回蚀工艺增加了生产量并减少了晶片的处理，从而产生了更有效和更高质量的间隙填充操作。
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