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    Growth and integration of epitaxial gallium nitride films with silicon-based devices
    4.
    发明申请
    Growth and integration of epitaxial gallium nitride films with silicon-based devices 有权
    外延氮化镓薄膜与硅基器件的生长和集成

    公开(公告)号：US20050124161A1

    公开(公告)日：2005-06-09

    申请号：US10970773

    申请日：2004-10-21

    申请人： Thomas Rawdanowicz ,  Jagdish Narayan

    发明人： Thomas Rawdanowicz ,  Jagdish Narayan

    IPC分类号： C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/338 ,  H01L21/302 ,  H01L21/461

    CPC分类号： C30B25/18 ,  C30B23/02 ,  C30B29/40 ,  H01L21/8258

    摘要： Epitaxial gallium nitride is grown on a silicon substrate while reducing or suppressing the formation of a buffer layer. The gallium nitride may be grown directly on the silicon substrate, for example using domain epitaxy. Alternatively, less than one complete monolayer of silicon nitride may be formed between the silicon and the gallium nitride. Subsequent to formation of the gallium nitride, an interfacial layer of silicon nitride may be formed between the silicon and the gallium nitride.

    摘要翻译： 在减少或抑制缓冲层的形成的同时，在硅衬底上生长外延氮化镓。 可以直接在硅衬底上生长氮化镓，例如使用畴外延。 或者，可以在硅和氮化镓之间形成少于一个完整的氮化硅单层。 在形成氮化镓之后，可以在硅和氮化镓之间形成氮化硅的界面层。

    Single crystal titanium nitride epitaxial on silicon
    5.
    发明授权
    Single crystal titanium nitride epitaxial on silicon 失效
    在硅上外延的单晶氮化钛

    公开(公告)号：US5406123A

    公开(公告)日：1995-04-11

    申请号：US897033

    申请日：1992-06-11

    申请人： Jagdish Narayan

    发明人： Jagdish Narayan

    IPC分类号： H01L21/285 ,  H01L29/45 ,  H01L29/12 ,  H01L29/161 ,  H01L29/40

    CPC分类号： H01L21/28575 ,  H01L29/452 ,  H01L29/456 ,  Y10S257/913

    摘要： Epitaxial growth of films on single crystal substrates having a lattice mismatch of at least 10% through domain matching is achieved by maintaining na.sub.1 within 5% of ma.sub.2, wherein a.sub.1 is the lattice constant of the substrate, a.sub.2 is the lattice constant of the epitaxial layer and n and m are integers. The epitaxial layer can be TiN and the substrate can be Si or GaAs. For instance, epitaxial TiN films having low resistivity can be provided on (100) silicon and (100) GaAs substrates using a pulsed laser deposition method. The TiN films were characterized using X-ray diffraction (XRD), Rutherford back scattering (RBS), four-point-probe ac resistivity, high resolution transmission electron microscopy (TEM) and scanning electron microscopy (SEM) techniques. Epitaxial relationship was found to be TiN aligned with Si. TiN films showed 10-20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Four-point probe measurements show characteristic metallic behavior of these TiN films as a function of temperature with a typical resistivity of about 15 .mu..OMEGA.-cm at room temperature.

    摘要翻译： 通过将n1保持在ma2的5％以内，其中a1是衬底的晶格常数，a2是外延层的晶格常数，实现通过畴匹配具有至少10％的晶格失配的单晶衬底上的膜的外延生长 n和m是整数。 外延层可以是TiN，衬底可以是Si或GaAs。 例如，可以使用脉冲激光沉积法在（100）硅和（100）GaAs衬底上提供具有低电阻率的外延TiN膜。 使用X射线衍射（XRD），卢瑟福背散射（RBS），四点探针交流电阻率，高分辨率透射电子显微镜（TEM）和扫描电子显微镜（SEM）技术对TiN膜进行了表征。 发现外延关系为＆lt; 100＆gt; TiN与<100> Si对准。 TiN膜显示10-20％的通道产率。 在平面上，TiN的四个单位电池与三个单位的硅单元相匹配，其中小于4.0％的失配。 该域匹配外延提供了具有大晶格失配的系统中外延生长的新机制。 四点探针测量显示这些TiN膜的特征金属性质作为温度的函数，在室温下的典型电阻率为约15μmOMEGA-cm。

    Laser method for forming low-resistance ohmic contacts on semiconducting oxides
    7.
    发明授权
    Laser method for forming low-resistance ohmic contacts on semiconducting oxides 失效
    用于在半导体氧化物上形成低电阻欧姆接触的激光方法

    公开(公告)号：US4261764A

    公开(公告)日：1981-04-14

    申请号：US80725

    申请日：1979-10-01

    申请人： Jagdish Narayan

    发明人： Jagdish Narayan

    IPC分类号： H01L21/28 ,  H01C17/18 ,  H01C17/28 ,  H01L21/263 ,  B23K9/00 ,  H01L7/18

    CPC分类号： H01C17/18 ,  H01C17/28 ,  Y10S148/093 ,  Y10S148/094

    摘要： This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead.This method is safe, rapid, reproducible, and relatively inexpensive.

    摘要翻译： 本发明是在宽带隙半导体氧化物上形成高质量欧姆接触的新方法。 如在含有pn结的n型BaTiO 3上形成欧姆接触所示例的，本发明要求在BaTiO3表面上沉积金属电镀材料的膜，并用Q开关激光脉冲照射该膜，完全熔化 薄膜和局部熔化立即在薄膜下面的氧化物表面层。 所得到的固化金属接触是欧姆的，具有非常低的接触电阻，并且即使在升高的温度下也是热稳定的。 在连接任何合适的电线之前，触点不需要清洁。 这种方法是安全，快速，可重复，而且相对便宜的。

    Method for forming p-n junctions and solar-cells by laser-beam processing
    8.
    发明授权
    Method for forming p-n junctions and solar-cells by laser-beam processing 失效
    通过激光束处理形成p-n结和太阳能电池的方法

    公开(公告)号：US4147563A

    公开(公告)日：1979-04-03

    申请号：US932154

    申请日：1978-08-09

    申请人： Jagdish Narayan ,  Rosa T. Young

    发明人： Jagdish Narayan ,  Rosa T. Young

    IPC分类号： H01L31/04 ,  H01L21/22 ,  H01L21/225 ,  H01L21/268 ,  H01L31/18 ,  H01L21/26

    CPC分类号： H01L21/268 ,  H01L21/2254 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S148/09 ,  Y10S148/092 ,  Y10S148/153

    摘要： This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

    摘要翻译： 本发明是用于制备诸如二极管和太阳能电池的p-n结器件的改进方法。 通过利用波长为约0.3〜1.1μm，能量面积密度为约1.0〜2.0J / cm 2的激光脉冲，将所选择的掺杂剂激光扩散到硅中，制备高质量结。 持续时间为约20至60纳秒。 最初，掺杂剂作为表面层沉积在硅上，优选为厚度为约50至100A的厚度。根据应用，选择上述脉冲参数的值以产生熔融 硅深度在约1000A至1μm的范围内。 本发明已经用于生产具有10.6％的一次太阳转换效率的太阳能电池，这些电池没有抗反射涂层或背表面场。

    Methods Of Forming Alpha And Beta Tantalum Films With Controlled And New Microstructures
    9.
    发明申请
    Methods Of Forming Alpha And Beta Tantalum Films With Controlled And New Microstructures 审中-公开
    用控制和新的微结构形成α和β钽薄膜的方法

    公开(公告)号：US20070280848A1

    公开(公告)日：2007-12-06

    申请号：US10593809

    申请日：2005-03-24

    申请人： Jagdish Narayan ,  Prabhat Kumar ,  Richard Wu

    发明人： Jagdish Narayan ,  Prabhat Kumar ,  Richard Wu

    IPC分类号： B05D5/12 ,  C22C27/02

    CPC分类号： C23C16/06 ,  C23C14/16 ,  C23C14/548

    摘要： Thin tantalum films having novel microstructures are provided. The films have microstructures such as nanocrystalline, single crystal and amorphous. These films provide excellent diffusion barrier properties and are useful in microelectronic devices. Methods of forming the films using pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) deposition methods are also provided, as are microelectronic devices incorporating these films.

    摘要翻译： 提供具有新颖微结构的薄钽薄膜。 该膜具有微结构，如纳米晶体，单晶和无定形。 这些膜提供优异的扩散阻挡性能并且在微电子器件中是有用的。 还提供了使用脉冲激光沉积（PLD）和分子束外延（MBE）沉积方法形成膜的方法，以及包含这些膜的微电子器件也是如此。

    Method for making defect-free zone by laser-annealing of doped silicon
    10.
    发明授权
    Method for making defect-free zone by laser-annealing of doped silicon 失效
    通过激光退火掺杂硅制造无缺陷区的方法

    公开(公告)号：US4181538A

    公开(公告)日：1980-01-01

    申请号：US945925

    申请日：1978-09-26

    申请人： Jagdish Narayan ,  Clark W. White ,  Rosa T. Young

    发明人： Jagdish Narayan ,  Clark W. White ,  Rosa T. Young

    IPC分类号： H01L21/263 ,  H01L21/268 ,  H01L21/26

    CPC分类号： H01L21/268 ,  H01L21/2636 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/092 ,  Y10S148/093 ,  Y10S148/097

    摘要： This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

    摘要翻译： 本发明是改善硅半导体材料的电性能的方法。 该方法包括用以波长，能级和持续时间的特殊组合为特征的大功率激光脉冲照射半导体材料的选定表面层。 这种组合会使层的熔化而不降低电性能，如少数载流子扩散长度。 该方法适用于改善待掺杂以在其中形成电连接的n型和p型硅的电性能。 该方法的另一个重要应用是从离子注入或扩散掺杂的硅衬底中实际上完全去除掺杂诱导的缺陷。