利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.012 秒)

    Method of fabricating a coherent superconducting oscillator
    1.
    发明授权
    Method of fabricating a coherent superconducting oscillator 失效
    制造相干超导振荡器的方法

    公开(公告)号：US3778893A

    公开(公告)日：1973-12-18

    申请号：US15188571

    申请日：1971-06-10

    申请人： IBM

    发明人： THOMPSON W

    IPC分类号： H01L39/22 ,  H01S3/16 ,  H01S5/30 ,  H03B15/00 ,  H01V11/00 ,  H01L7/18

    CPC分类号： H03B15/00 ,  H01L39/2493 ,  H01S1/02 ,  H01S3/1683 ,  Y10S505/854 ,  Y10S505/922 ,  Y10T29/49014

    摘要： A superconducting oscillator for generating millimeter and infrared radiation and a method for fabricating these oscillators. A Josephson junction (weak link or tunneling juntion) is located between electrodes which furnish DC current to the junction and also define a resonant cavity for electromagnetic radiation from the junction. Thus, an internal cavity is provided and increased power outputs over a wide frequency range are possible. The oscillator is produced by spark erosion between the electrodes at liquid helium temperatures, which forms a very small junction and cavity resonator.

    摘要翻译： 一种用于产生毫米波和红外辐射的超导振荡器和一种用于制造这些振荡器的方法。 约瑟夫逊结（弱连接或隧道连接）位于向连接处提供直流电流的电极之间，并且还限定了用于来自结的电磁辐射的谐振腔。 因此，提供内部空腔并且可以在较宽的频率范围内增加功率输出。 振荡器由电极之间在液氦温度下的火花腐蚀产生，形成非常小的结和空腔谐振器。

    Laser method for forming low-resistance ohmic contacts on semiconducting oxides
    4.
    发明授权
    Laser method for forming low-resistance ohmic contacts on semiconducting oxides 失效
    用于在半导体氧化物上形成低电阻欧姆接触的激光方法

    公开(公告)号：US4261764A

    公开(公告)日：1981-04-14

    申请号：US80725

    申请日：1979-10-01

    申请人： Jagdish Narayan

    发明人： Jagdish Narayan

    IPC分类号： H01L21/28 ,  H01C17/18 ,  H01C17/28 ,  H01L21/263 ,  B23K9/00 ,  H01L7/18

    CPC分类号： H01C17/18 ,  H01C17/28 ,  Y10S148/093 ,  Y10S148/094

    摘要： This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead.This method is safe, rapid, reproducible, and relatively inexpensive.

    摘要翻译： 本发明是在宽带隙半导体氧化物上形成高质量欧姆接触的新方法。 如在含有pn结的n型BaTiO 3上形成欧姆接触所示例的，本发明要求在BaTiO3表面上沉积金属电镀材料的膜，并用Q开关激光脉冲照射该膜，完全熔化 薄膜和局部熔化立即在薄膜下面的氧化物表面层。 所得到的固化金属接触是欧姆的，具有非常低的接触电阻，并且即使在升高的温度下也是热稳定的。 在连接任何合适的电线之前，触点不需要清洁。 这种方法是安全，快速，可重复，而且相对便宜的。

    Formation of composite oxides on III-V semiconductors
    5.
    发明授权
    Formation of composite oxides on III-V semiconductors 失效
    在III-V族半导体上形成复合氧化物

    公开(公告)号：US3882000A

    公开(公告)日：1975-05-06

    申请号：US46842374

    申请日：1974-05-09

    申请人： BELL TELEPHONE LABOR INC

    发明人： SCHWARTZ BERTRAM ,  SPITZER STUART MARSHALL ,  WEIGLE GREGORY DYETT

    IPC分类号： C25D11/32 ,  H01L21/316 ,  C23F17/00 ,  H01L7/18

    CPC分类号： C25D11/32 ,  H01L21/31687

    摘要： A method of forming a composite oxide on III-V compound semiconductors is disclosed. An oxidizable metal such as Al, Ni, Ta, Ti, Zn or alloys including said metals is deposited on the surface of the semiconductor or on a native oxide grown on the semiconductor. The structure is subjected to an electrolytic oxidation so that all the metal is oxidized and a native oxide is grown into the surface resulting in a composite oxide comprising the native oxide and the metal oxide. This composite oxide can serve to passivate the semiconductor as well as provide a stable mask for etching and diffusion processes. In addition, the composite oxide appears to have a high dielectric strength for use in MOS devices.

    摘要翻译： 公开了在III-V族化合物半导体上形成复合氧化物的方法。 可氧化金属如Al，Ni，Ta，Ti，Zn或包含所述金属的合金沉积在半导体的表面上或在半导体上生长的天然氧化物上。 对该结构进行电解氧化，使得所有的金属被氧化，并且将天然氧化物生长到表面中，产生包含天然氧化物和金属氧化物的复合氧化物。 该复合氧化物可用于钝化半导体，并为蚀刻和扩散工艺提供稳定的掩模。 此外，复合氧化物似乎具有用于MOS器件的高介电强度。

    Method for making and using a group IV-VI semiconductor
    8.
    发明授权
    Method for making and using a group IV-VI semiconductor 失效
    制造和使用第IV组的方法[14 VI半导体

    公开(公告)号：US4080723A

    公开(公告)日：1978-03-28

    申请号：US781377

    申请日：1977-03-25

    申请人： Henry Holloway

    发明人： Henry Holloway

    IPC分类号： H01L31/04 ,  H01L31/032 ,  H01L31/103 ,  H01L7/18 ,  H01L27/14

    CPC分类号： H01L31/1037 ,  H01L31/0324 ,  Y10S438/93

    摘要： A method for making and using a group IV-VI photovoltaic semiconductor diode such that its capacitance is reduced substantially with respect to its capacitance if made and used according to prior art techniques. The capacitance reduction may be obtained without detrimental effect to the detectivity and noise levels of the diode. In the currently preferred form of the method, a thin film of p conductivity type semiconductor material, PbTe, is applied to (epitaxially grown on) a cleaved BaF.sub.2 substrate. A layer of Pb is deposited on the semiconductor material to form a diode having an n+ conductivity type region in the semiconductor material and a depletion region. When the PbTe semiconductor material is applied to the BaF.sub.2 substrate, its thickness is limited such that the depletion region extends to the boundary formed between the PbTe and BaF.sub.2 materials, either when the diode is formed or, preferably, when a backbias voltage, less than the diode reverse breakdown voltage, is applied across the p-n junction. The diode is particularly suitable for use as an infrared detector typically operated at 80.degree. K.

    摘要翻译： 一种用于制造和使用IV-VI族光伏半导体二极管的方法，使得如果根据现有技术制造和使用，其电容相对于其电容基本上减小。 可以获得电容减小，而不会对二极管的检测性和噪声水平产生不利影响。 在本方法的当前优选形式中，将p导电型半导体材料的薄膜PbTe施加到（外延生长）切割的BaF 2衬底上。 一层Pb沉积在半导体材料上以形成在半导体材料中具有n +导电类型区域的二极管和耗尽区域。 当将PbTe半导体材料施加到BaF 2衬底时，其厚度被限制，使得耗尽区延伸到形成于PbTe和BaF 2材料之间的边界，或者当二极管形成时，或者优选地，当反向电压小于 二极管反向击穿电压施加在pn结上。 二极管特别适用于通常在80°K工作的红外探测器。

    Time-delay solenoid
    9.
    发明授权
    Time-delay solenoid 失效
    时间延迟电磁阀

    公开(公告)号：US3643193A

    公开(公告)日：1972-02-15

    申请号：US3643193D

    申请日：1970-10-19

    申请人： ESSEX INTERNATIONAL INC

    发明人： PROUTY ROBERT E

    IPC分类号： H01F7/08 ,  H01L7/18

    CPC分类号： H01F7/088

    摘要： A time-delay solenoid includes a cylindrical permanent magnet and a coil wound cylindrical bobbin mounted within a single housing and adapted to exert opposite forces on a plunger. The plunger having a ball check valve connected to one end thereof is slidably secured for movement inside a tube within the solenoid. The valve acts to impede movement of the plunger in one direction through a viscous fluid in the tube.

    摘要翻译： 时间延迟螺线管包括圆柱形永磁体和安装在单个壳体内并适于在柱塞上施加相反力的线圈缠绕圆筒形筒管。 具有连接到其一端的球止回阀的柱塞可滑动地固定以在螺线管内的管内移动。 该阀用于阻止柱塞沿一个方向移动通过管中的粘性流体。