-
1.发明授权SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn 失效SixSnyGe1-x-y和基于Si，Ge和Sn的相关合金异质结构公开(公告)号：US07598513B2
公开(公告)日：2009-10-06
申请号：US10559979
申请日：2004-06-14
Applicant: John Kouvetakis , Matthew Bauer , John Tolle
Inventor： John Kouvetakis , Matthew Bauer , John Tolle
IPC: H01L29/06 , H01L21/336
CPC classification number: H01L31/028 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0259 , H01L21/0262 , H01L29/161 , H01L29/165 , Y02E10/547 , Y10S148/169 , Y10S438/936
Abstract: A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD4 with SiH3GeH3. Using the method, single-phase SixSnyGe1-x-y semiconductors (x≦0.25, y≦0.11) are grown on Si via Ge1-xSnx buffer layers The Ge1-xSnx buffer layers facilitate heteroepitaxial growth of the SixSnyGe1-x-y films and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiH3GeH3 species was prepared using a new and high yield method that provided high purity semiconductor grade material.
Abstract translation: 在Si-Ge-Sn系统中合成器件质量合金和有序相的新方法使用特高压CVD法和SnD4与SiH3GeH3的反应。 使用该方法，通过Ge1-xSnx缓冲层在Si上生长单相SixSnyGe1-xy半导体（x <= 0.25，y <= 0.11）。Ge1-xSnx缓冲层促进SixSnyGe1-xy膜的异质外延生长，并作为 可以在结构上符合并吸收由更刚性的Si和Si-Ge-Sn材料施加的微分应变。 使用提供高纯度半导体级材料的新的高产率方法制备SiH 3 GeH 3物质。
-
2.发明授权GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon 失效GeSn合金和直接在硅上生长的直接可调带隙的有序相公开(公告)号：US07589003B2
公开(公告)日：2009-09-15
申请号：US10559981
申请日：2004-06-14
Applicant: John Kouvetakis , Matthew Bauer , Jose Menendez , Chang Wu Hu , Ignatius S. T. Tsong , John Tolle
Inventor： John Kouvetakis , Matthew Bauer , Jose Menendez , Chang Wu Hu , Ignatius S. T. Tsong , John Tolle
IPC: H01L21/00
CPC classification number: C30B29/40 , B82Y10/00 , C30B25/02 , H01L21/02381 , H01L21/02532 , H01L21/02535 , H01L21/0262
Abstract: A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.
Abstract translation: 在CVD反应室中在衬底上沉积外延Ge-Sn层的方法包括在衬底上形成外延Ge-Sn层的条件下将包含SnD4的气态前体引入室中。 气态前体包含约15-20体积％的SnD4和高纯度H2。 气体前体在约250℃至约350℃的温度下引入。使用具有可调带隙的工艺装置质量的Sn-Ge材料可直接在Si衬底上生长。
-
3.发明授权Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs 有权Ge1-x-ySnxEy（E = P，As，Sb）半导体及相关Si-Ge-Sn-E和Si-Ge-E类似物的制备方法公开(公告)号：US07238596B2
公开(公告)日：2007-07-03
申请号：US10559980
申请日：2004-06-14
Applicant: John Kouvetakis , Matthew Bauer , John Tolle , Candi Cook
Inventor： John Kouvetakis , Matthew Bauer , John Tolle , Candi Cook
CPC classification number: H01L21/2252 , C23C16/22 , C30B25/02 , C30B29/08 , C30B29/52
Abstract: A process for is provided for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH3Br and [CH3)3Si]3E are combined under conditions whereby E(GeH3)3 is obtained. The E(GeH3)3 is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH3)3 can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.
Abstract translation: 提供了用于合成具有式E（GeH 3 3）3的化合物的方法，其中E选自砷（As），锑（Sb） 和磷（P）。 GeH 3 Br和[CH 3 3] 3 Si] 3 E在条件下合并，其中E（GeH 3） 3＆lt; 3＆gt; 3＆lt; 3＆gt;。 通过捕获阱捕获分级分离纯化E（GeH 3 N 3）3。 可以获得约70％至约76％的产率。 E（GeH 3 3）3 3可以用作在化学气相沉积反应中掺杂包含Ge，SnGe，SiGe和SiGeSn的半导体材料的区域的气态前体 房间。
-
4.发明申请Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon 失效Gesn合金和直接在硅上生长的直接可调带隙的有序相公开(公告)号：US20070020891A1
公开(公告)日：2007-01-25
申请号：US10559981
申请日：2004-06-14
Applicant: John Kouvetakis , Matthew Bauer , Jose Menendez , Chang Hu , Ignatius Tsong , John Tolle
Inventor： John Kouvetakis , Matthew Bauer , Jose Menendez , Chang Hu , Ignatius Tsong , John Tolle
IPC: H01L21/20
CPC classification number: C30B29/40 , B82Y10/00 , C30B25/02 , H01L21/02381 , H01L21/02532 , H01L21/02535 , H01L21/0262
Abstract: A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.
Abstract translation: 在CVD反应室中在衬底上沉积外延Ge-Sn层的方法包括在衬底上形成外延Ge-Sn层的条件下将包含SnD4的气态前体引入室中。 气态前体包含约15-20体积％的SnD4和高纯度H2。 气体前体在约250℃至约350℃的温度下引入。使用具有可调带隙的工艺装置质量的Sn-Ge材料可直接在Si衬底上生长。
-
5.发明申请Method for preparing ge1-x-ysnxey (e=p, as, sb) semiconductors and related si-ge-sn-e and si-ge-e analogs 有权制备ge1-x-ysnxey（e = p，as，sb）半导体及相关si-ge-sn-e和si-ge-e类似物的方法公开(公告)号：US20060134895A1
公开(公告)日：2006-06-22
申请号：US10559980
申请日：2004-06-14
Applicant: John Kouvetakis , Matthew Bauer , John Tolle , Candi Cook
Inventor： John Kouvetakis , Matthew Bauer , John Tolle , Candi Cook
IPC: H01L21/22
CPC classification number: H01L21/2252 , C23C16/22 , C30B25/02 , C30B29/08 , C30B29/52
Abstract: A process for is provided for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH3Br and [CH3)3Si]3E are combined under conditions whereby E(GeH3)3 is obtained. The E(GeH3)3 is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH3)3 can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.
Abstract translation: 提供了用于合成具有式E（GeH 3 3）3的化合物的方法，其中E选自砷（As），锑（Sb） 和磷（P）。 GeH 3 Br和[CH 3 3] 3 Si] 3 E在条件下合并，其中E（GeH 3） 3＆lt; 3＆gt; 3＆lt; 3＆gt;。 通过捕获阱捕获分级分离纯化E（GeH 3 N 3）3。 可以获得约70％至约76％的产率。 E（GeH 3 3）3 3可以用作在化学气相沉积反应中掺杂包含Ge，SnGe，SiGe和SiGeSn的半导体材料的区域的气态前体 房间。
-
Patent Agency Ranking
6.发明授权Hydride compounds with silicon and germanium core atoms and method of synthesizing same 失效具有硅和锗核心原子的氢化物化合物及其合成方法公开(公告)号：US08568681B2
公开(公告)日：2013-10-29
申请号：US13180961
申请日：2011-07-12
Applicant: John Kouvetakis , Cole J. Ritter , John Tolle
Inventor： John Kouvetakis , Cole J. Ritter , John Tolle
IPC: C01B33/00
CPC classification number: C01B33/04 , C01B6/06 , Y10S148/058
Abstract: A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
Abstract translation: 提供了一种用于合成式（H3Ge）4-xSiHx的硅 - 锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配位体的化合物组合， 形成硅 - 锗氢化物。 具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。 三氟甲磺酸硅烷可以是H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。 该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。 三氟甲磺酸硅烷可以包括H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括将H3GeSiH 2（OSO 2 CF 3）与KGeH 3组合， 形成了。
-
7.发明授权Hydride compounds with silicon and germanium core atoms and method of synthesizing same 有权具有硅和锗核心原子的氢化物化合物及其合成方法公开(公告)号：US07981392B2
公开(公告)日：2011-07-19
申请号：US11662722
申请日：2004-12-31
Applicant: John Kouvetakis , Cole J. Ritter, III , John Tolle
Inventor： John Kouvetakis , Cole J. Ritter, III , John Tolle
IPC: C01B33/00
CPC classification number: C01B33/04 , C01B6/06 , Y10S148/058
Abstract: A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-XSiHX, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HXSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HXSi(OSO2CF3)4-x or HXSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
Abstract translation: 提供了一种用于合成式（H3Ge）4-XSiHX的硅锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配体的化合物组合， 形成硅 - 锗氢化物。 具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。 三氟甲磺酸硅烷可以是HXSi（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。 该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。 三氟甲磺酸硅烷可以包括HXSi（OSO 2 CF 3）4-x或HXSi（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括在下列条件下组合H3GeSiH 2（OSO 2 CF 3）与KGeH 3：（H3Ge）2 Si 形成了。
-
8.发明申请Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon 失效基于Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件公开(公告)号：US20080277647A1
公开(公告)日：2008-11-13
申请号：US11663024
申请日：2005-09-16
Applicant: John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
Inventor： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC: H01L31/0264
CPC classification number: G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
Abstract: A semiconductor structure including a single quantum well Ge1−x1−ySix1Sn/Ge1−x2Six2 heterostructure grown strain-free on Si(100) via a Sn1−xGex buffer layer is shown.
Abstract translation: 包括单量子阱的半导体结构Ge 1-x1-y Si 1 Sn 1 / x 1 x 2 Si x 2 x 2 示出了在Si（100）上通过Sn 1-x N Ge x S x缓冲层生长无应变的异质结构。
-
9.发明申请Hydride Compounds with Silicon and Germanium Core Atoms and method of Synthesizing Same 失效具有硅和锗核原子的氢化物化合物及其合成方法公开(公告)号：US20120020864A1
公开(公告)日：2012-01-26
申请号：US13180961
申请日：2011-07-12
Applicant: John Kouvetakis , Cole J. Ritter, III , John Tolle
Inventor： John Kouvetakis , Cole J. Ritter, III , John Tolle
IPC: C01B33/04
CPC classification number: C01B33/04 , C01B6/06 , Y10S148/058
Abstract: A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
Abstract translation: 提供了一种用于合成式（H3Ge）4-xSiHx的硅 - 锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配位体的化合物组合， 形成硅 - 锗氢化物。 具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。 三氟甲磺酸硅烷可以是H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。 该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。 三氟甲磺酸硅烷可以包括H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括将H3GeSiH 2（OSO 2 CF 3）与KGeH 3组合， 形成了。
-
10.发明授权Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon 失效基于在Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件公开(公告)号：US07582891B2
公开(公告)日：2009-09-01
申请号：US11663024
申请日：2005-09-16
Applicant: John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
Inventor： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC: H01L29/739
CPC classification number: G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
Abstract: Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer and their uses are provided.
Abstract translation: 提供了具有通过Sn1-xGex缓冲层在Si（100）上生长无应变的至少一个量子阱异质结的半导体结构及其用途。
-
-
-
-
-
-
-
-
-
Search Results
19
records
(took 0.022 seconds)
