摘要:
Disclosed is an apparatus and method for transmitting/receiving data using a low-density parity check (LDPC) coding scheme in a communication system. The method includes generating a multi-user data packet containing data to be transmitted to a plurality of users, encoding the multi-user data packet as a BCC and an LDPC code, and transmitting the encoded multi-user data packet to the plurality of users. In the method, the encoding of the multi-user data packet encodes MPDU subframes corresponding to each of the plurality of users in the multi-user data packet as the LDPC code, and calculates information on a length in LDPC encoding, corresponding to the encoding of the multi-user data packet as the LDPC code.
摘要:
Disclosed is an apparatus and method for transmitting/receiving data using a low-density parity check (LDPC) coding scheme in a communication system. The method includes generating a multi-user data packet containing data to be transmitted to a plurality of users, encoding the multi-user data packet as a BCC and an LDPC code, and transmitting the encoded multi-user data packet to the plurality of users. In the method, the encoding of the multi-user data packet encodes MPDU subframes corresponding to each of the plurality of users in the multi-user data packet as the LDPC code, and calculates information on a length in LDPC encoding, corresponding to the encoding of the multi-user data packet as the LDPC code.
摘要:
The present invention relates to a blind type curtain, and more specifically to a blind type curtain, obtained by forming several blind unit pieces formed on rear surface of the textile curtain at regular interval, such that the functions such as light beam regulation, sight-blocking, soundproofing, anti-cold, and anti-rat can be performed, and the function such as interior can be simultaneously performed, by which these functions are further magnified, of which the manufacture and handling is easy, used as a combined use of indoor and outdoor, and which provides no concern about noise and breakage. That is, a membrane shaped blind unit piece 2 is prepared by forming several blind unit pieces protrusively formed in a row direction at regular interval, preparing a connecting yarn on rear side of the blind unit piece, weaving the upper and lower end of the connecting yarn with the upper and lower end of a space of rear side of the blind unit piece to maintain the protrusion of the unit piece, and folding the lower end of the blind unit piece 2 forcibly.
摘要:
Disclosed herein is a method of manufacturing a thin film transistor including titanium oxides as an active layer and the structure of the thin film transistor film manufactured using the method. The thin film transistor includes: a substrate; an active layer formed on the substrate using polycrystalline or amorphous titanium oxides; and an insulating layer formed on the active layer. Further, the method of manufacturing the thin film transistor includes: forming a substrate; forming an active layer on the substrate using polycrystalline or amorphous titanium oxides; and forming an insulating layer on the active layer. The present invention is advantageous in that the performance of the thin film transistor can be improved, the thin film transistor can be manufactured at low cost, harmful environmental problems can be solved, and the thin film transistor can be widely applied to various electronic apparatuses including, but not limited to, integrated drivers in active-matrix displays and transparent electronic devices.
摘要:
A thin film transistor includes a gate electrode, a gate insulating layer on the gate electrode, a semiconductor on the gate insulating layer, and a drain electrode and a source electrode on the semiconductor and spaced apart from each other. Each of the drain electrode and the source electrode includes a first metal diffusion preventing layer which prevents diffusion of metal atoms, and a second metal diffusion preventing layer on the first metal diffusion preventing layer. At least one of the first and second metal diffusion preventing layers includes grains in a columnar structure, which are in a direction substantially perpendicular to a lower layer. First grain boundaries of the first metal diffusion preventing layer and second grain boundaries of the second metal diffusion preventing layer are substantially discontinuous in a direction perpendicular to the semiconductor.
摘要:
A wireless local area network (WLAN) system is disclosed. The WLAN system includes a first access point (AP), and a second AP which has a same service set identifier (SSID) as that of the first AP, wherein the first AP and the second AP are configured to respectively perform a network address translation (NAT) and have a same virtual media access control (MAC) address. The WLAN system according to the present disclosure supports successful roaming between APs which belong to different networks regardless of the type of the wireless terminal.
摘要:
A nonvolatile memory device and a method of operating the same are provided. The method includes performing a plurality of program operations on a plurality of memory cells each to be programmed to one of a plurality of program states, performing a program-verify operation on programmed memory cells associated with each of the plurality of program states, the program-verify operation comprises, selecting one of the plurality of offsets based on a noise level of a common source line associated with a programmed memory cell, using the selected offset to select one of a first verify voltage and a second verify voltage higher than the first verify voltage, and verifying a program state of the programmed memory cell using the first verify voltage and the second verify voltage.
摘要:
A method of operating a non-volatile memory device includes performing an erasing operation to memory cells associated with a plurality of string selection lines (SSLs), the memory cells associated with the plurality of SSLs constituting a memory block, and verifying the erasing operation to second memory cells associated with a second SSL after verifying the erasing operation to first memory cells associated with a first SSL.
摘要:
A programming method for a nonvolatile memory device includes performing a LSB programming operation programming all LSB logical pages, and thereafter performing a MSB programming operation programming all MSB logical pages, wherein during the LSB programming operation a selected MLC is programmed to a negative intermediate program state. A program sequence for the LSB and MSB programming operations may be sequential or non-sequential in relation to an order arranged of word lines.
摘要:
Provided are a non-volatile memory device in which time required for programming may be saved, and a method of driving the same. The non-volatile memory device may include a memory cell array with a plurality of memory cells; an input/output buffer having a storage unit that stores data and indicator bits representing information regarding the data; a data scanning unit that receives the stored data from the input/output buffer in units of scanning, and that scans the received data, the received data being selectively programmed in the memory cells according to a result of scanning the data; and/or a control logic unit that controls the data stored in the input/output buffer in units of scanning to be selectively supplied to the data scanning unit based on the states of the indicator bits.