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    Lithographic apparatus, device manufacturing method and radiation system
    3.
    发明授权
    Lithographic apparatus, device manufacturing method and radiation system 有权
    光刻设备，设备制造方法和辐射系统

    公开(公告)号：US07309869B2

    公开(公告)日：2007-12-18

    申请号：US11127312

    申请日：2005-05-12

    申请人： Ralph Kurt ,  Levinus Pieter Bakker ,  Frank Jeroen Pieter Schuurmans ,  Jan Evert Van Der Werf

    发明人： Ralph Kurt ,  Levinus Pieter Bakker ,  Frank Jeroen Pieter Schuurmans ,  Jan Evert Van Der Werf

    IPC分类号： G03B27/52

    CPC分类号： B82Y10/00 ,  G03F7/70033 ,  G03F7/7005 ,  G21K1/06

    摘要： A lithographic projection apparatus includes an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the beam of radiation with a pattern in its cross section; a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam of radiation onto a target portion of the substrate, wherein the illumination system has a radiation source and at least one mirror configured to enhance an output of the source. The illumination system may include a second radiation source and at least one mirror positioned between the radiation sources to image the output of the second source onto the first source, thereby enhancing the output of the source. The radiation sources may be operable to emit radiation in the EUV wavelength range.

    摘要翻译： 光刻投影设备包括被配置为提供辐射束的照明系统; 被配置为支撑图案形成装置的支撑件，所述图案形成装置被构造成在其横截面中赋予所述辐射束的图案; 被配置为保持衬底的衬底台和被配置为将所述图案化的辐射束投射到所述衬底的目标部分上的投影系统，其中所述照明系统具有辐射源和至少一个配置成增强所述源的输出的反射镜 。 照明系统可以包括第二辐射源和位于辐射源之间的至少一个反射镜，以将第二源的输出成像到第一源上，从而增强源的输出。 辐射源可以可操作地发射EUV波长范围内的辐射。

    Lithographic apparatus, device manufacturing method and radiation system
    4.
    发明授权
    Lithographic apparatus, device manufacturing method and radiation system 有权
    光刻设备，设备制造方法和辐射系统

    公开(公告)号：US07105837B2

    公开(公告)日：2006-09-12

    申请号：US10844577

    申请日：2004-05-13

    申请人： Ralph Kurt ,  Levinus Pieter Bakker ,  Frank Jeroen Pieter Schuurmans ,  Jan Evert Van Der Werf

    发明人： Ralph Kurt ,  Levinus Pieter Bakker ,  Frank Jeroen Pieter Schuurmans ,  Jan Evert Van Der Werf

    IPC分类号： G21K5/00

    CPC分类号： B82Y10/00 ,  G03F7/70033 ,  G03F7/7005 ,  G21K1/06

    摘要： A lithographic projection apparatus includes an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the beam of radiation with a pattern in its cross section; a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam of radiation onto a target portion of the substrate, wherein the illumination system has a radiation source and at least one mirror configured to enhance an output of the source. The illumination system may include a second radiation source and at least one mirror positioned between the radiation sources to image the output of the second source onto the first source, thereby enhancing the output of the source. The radiation sources may be operable to emit radiation in the EUV wavelength range.

    摘要翻译： 光刻投影设备包括被配置为提供辐射束的照明系统; 被配置为支撑图案形成装置的支撑件，所述图案形成装置被构造成在其横截面中赋予所述辐射束的图案; 被配置为保持衬底的衬底台和被配置为将所述图案化的辐射束投射到所述衬底的目标部分上的投影系统，其中所述照明系统具有辐射源和至少一个配置成增强所述源的输出的反射镜 。 照明系统可以包括第二辐射源和位于辐射源之间的至少一个反射镜，以将第二源的输出成像到第一源上，从而增强源的输出。 辐射源可以可操作地发射EUV波长范围内的辐射。

    Alignment system and lithographic apparatus equipped with such an alignment system
    6.
    发明授权
    Alignment system and lithographic apparatus equipped with such an alignment system 有权
    对准系统和配备这种对准系统的光刻设备

    公开(公告)号：US07283236B2

    公开(公告)日：2007-10-16

    申请号：US10882683

    申请日：2004-07-02

    申请人： Cristian Presura ,  Jan Evert Van Der Werf

    发明人： Cristian Presura ,  Jan Evert Van Der Werf

    IPC分类号： G01B11/00 ,  G03B27/42 ,  G03B27/32 ,  H01L23/544 ,  H01L21/76 ,  G03F9/00 ,  G03C5/00

    CPC分类号： G03F9/7076

    摘要： A marker structure on a substrate includes line elements and trench elements, the line elements and trench elements each having a length in a first direction and being arranged in an alternating repetitive sequence in a second direction perpendicular to the first direction, the alternating repetitive sequence having a sequence length, the marker structure having at least one pitch value, the at least one pitch value being the sum of a line width of one line element and a trench width of one trench element. A width of the line elements varies over the sequence length of the marker structure between a minimum line width value and a maximum line width value, while a width of the trench elements likewise varies over the sequence length of the marker structure between a minimum trench width value and a maximum trench width value. A duty cycle of a pair of a line element and an adjacent trench element is substantially constant over the sequence length of the marker structure. Thus, the pitch value varies from a minimum pitch value to a maximum pitch value over the sequence length.

    摘要翻译： 衬底上的标记结构包括线元件和沟槽元件，线元件和沟槽元件各自具有在第一方向上的长度并且在垂直于第一方向的第二方向上以交替的重复序列排列，所述交替重复序列具有 序列长度，所述标记结构具有至少一个间距值，所述至少一个间距值是一个线形元件的线宽和一个沟槽元件的沟槽宽度之和。 线元素的宽度在标记结构的序列长度之间在最小线宽度值和最大线宽度值之间变化，而沟槽元件的宽度同样在标记结构的序列长度之间变化，最小沟宽度 值和最大沟槽宽度值。 一对线元件和相邻沟槽元件的占空比在标记结构的序列长度上基本上是恒定的。 因此，音调值在序列长度上从最小音调值变化到最大音调值。

    Lithographic apparatus and device manufacturing method
    7.
    发明授权
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号：US07012673B2

    公开(公告)日：2006-03-14

    申请号：US10866077

    申请日：2004-06-14

    申请人： Aleksey Yurievich Kolesnychenko ,  Jan Evert Van Der Werf

    发明人： Aleksey Yurievich Kolesnychenko ,  Jan Evert Van Der Werf

    IPC分类号： G03B27/42 ,  G03B27/52

    CPC分类号： G03F7/70341

    摘要： Liquid is supplied to a space between a projection system of a lithographic apparatus and a substrate, but there is a space between the liquid and the substrate. An evanescent field may be formed between the liquid and the substrate allowing some photons to expose the substrate. Due to the refractive index of the liquid, the resolution of the system may be improved and liquid on the substrate may be avoided.

    摘要翻译： 液体被供应到光刻设备的投影系统和基板之间的空间，但在液体和基板之间存在空间。 可以在液体和基底之间形成一个ev逝场，使一些光子露出基底。 由于液体的折射率，可以改善系统的分辨率，并且可以避免衬底上的液体。

    Method of detecting mask defects, a computer program and reference substrate
    9.
    发明授权
    Method of detecting mask defects, a computer program and reference substrate 有权
    检测掩模缺陷的方法，计算机程序和参考基板

    公开(公告)号：US07307712B2

    公开(公告)日：2007-12-11

    申请号：US10693603

    申请日：2003-10-27

    申请人： Jan Evert Van Der Werf ,  Auke Jan Mud

    发明人： Jan Evert Van Der Werf ,  Auke Jan Mud

    IPC分类号： G01N21/00

    CPC分类号： G03F7/7065

    摘要： A method of detecting mask defects in which a reference substrate is patterned by the mask immediately after manufacture of the mask is disclosed. The reference substrate is stored in clean conditions while IC manufacture takes place. When a mask defect is suspected, a resist coated substrate, the test substrate, is patterned by exposure of the mask. The patterns on the reference substrate and the test substrate are compared to determine if there is a mask defect. The location of the mask defect can be found by scanning smaller areas of the patterns.

    摘要翻译： 公开了一种在制造掩模之后立即检测掩模缺陷的方法，其中通过掩模对参考基板进行图案化。 参考基板在IC制造过程中保存在干净的状态。 当怀疑掩模缺陷时，通过掩模的曝光将抗蚀剂涂覆的基底（即测试基底）图案化。 比较参考基板和测试基板上的图案，以确定是否存在掩模缺陷。 掩模缺陷的位置可以通过扫描图案的较小区域来找到。

    Method of measuring overlay
    10.
    发明授权
    Method of measuring overlay 有权
    测量覆盖层的方法

    公开(公告)号：US07277185B2

    公开(公告)日：2007-10-02

    申请号：US11153316

    申请日：2005-06-16

    申请人： Rene Monshouwer ,  Jacobus Hermanus Maria Neijzen ,  Jan Evert Van Der Werf

    发明人： Rene Monshouwer ,  Jacobus Hermanus Maria Neijzen ,  Jan Evert Van Der Werf

    IPC分类号： G01B11/02 ,  G01B11/00

    CPC分类号： G03F7/70633 ,  G03F7/70675 ,  G03F9/7049 ,  G03F9/7084

    摘要： In a method of measuring, in a lithographic manufacturing process using a lithographic projection apparatus, overlay between a resist layer, in which a mask pattern is to be imaged, and a substrate, use is made of an alignment-measuring device forming part of the apparatus and of specific overlay marks in the substrate and resist layer. These marks have periodic structures with periods which cannot be resolved by the alignment device, but generate an interference pattern having a period corresponding to the period of a reference mark of the alignment device.

    摘要翻译： 在使用光刻投影装置的光刻制造工艺中，在要成像掩模图案的抗蚀剂层与基板之间进行覆盖的测量方法中，使用对准测量装置形成部分 设备和基板和抗蚀剂层中的特定覆盖标记。 这些标记具有周期性结构，其周期不能由对准装置解决，而是产生具有对应于对准装置的参考标记的周期的周期的干涉图案。