-
公开(公告)号：US20100314707A1
公开(公告)日：2010-12-16
申请号：US12484096
申请日：2009-06-12
IPC分类号： H01L29/872 , H01L21/22 , H01L21/33
CPC分类号： H01L29/407 , H01L29/36 , H01L29/8725
摘要： Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conductivity type within a portion of the semiconductor layer. The graded portion is located adjacent to the top surface of the semiconductor layer, and the graded net doping concentration therein decreasing in value with distance from the top surface of the semiconductor layer. The exemplary device also comprises an electrode disposed at the first surface of the semiconductor layer and adjacent to the graded portion.
摘要翻译： 公开了制造半导体器件的半导体器件和方法。 示例性实施例包括第一导电类型的半导体层，其具有在半导体层的一部分内的第一导电类型的第一表面，第二表面和等级净掺杂浓度。 分级部分位于与半导体层的顶表面相邻的位置，并且其中的渐变网络掺杂浓度随距离半导体层的顶表面的距离而减小。 示例性器件还包括设置在半导体层的第一表面并且与渐变部分相邻的电极。
-
公开(公告)号：US08492837B2
公开(公告)日：2013-07-23
申请号：US13283496
申请日：2011-10-27
IPC分类号： H01L29/872
CPC分类号： H01L29/407 , H01L29/36 , H01L29/8725
摘要： Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conductivity type within a portion of the semiconductor layer. The graded portion is located adjacent to the top surface of the semiconductor layer, and the graded net doping concentration therein decreasing in value with distance from the top surface of the semiconductor layer. The exemplary device also comprises an electrode disposed at the first surface of the semiconductor layer and adjacent to the graded portion.
摘要翻译： 公开了制造半导体器件的半导体器件和方法。 示例性实施例包括第一导电类型的半导体层，其具有在半导体层的一部分内的第一导电类型的第一表面，第二表面和渐变网掺杂浓度。 分级部分位于与半导体层的顶表面相邻的位置，并且其中的渐变网络掺杂浓度随距离半导体层的顶表面的距离而减小。 示例性器件还包括设置在半导体层的第一表面并且与渐变部分相邻的电极。
-
公开(公告)号：US20120037982A1
公开(公告)日：2012-02-16
申请号：US13283496
申请日：2011-10-27
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/407 , H01L29/36 , H01L29/8725
摘要： Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conductivity type within a portion of the semiconductor layer. The graded portion is located adjacent to the top surface of the semiconductor layer, and the graded net doping concentration therein decreasing in value with distance from the top surface of the semiconductor layer. The exemplary device also comprises an electrode disposed at the first surface of the semiconductor layer and adjacent to the graded portion.
摘要翻译： 公开了制造半导体器件的半导体器件和方法。 示例性实施例包括第一导电类型的半导体层，其具有在半导体层的一部分内的第一导电类型的第一表面，第二表面和等级净掺杂浓度。 分级部分位于与半导体层的顶表面相邻的位置，并且其中的渐变网络掺杂浓度随距离半导体层的顶表面的距离而减小。 示例性器件还包括设置在半导体层的第一表面并且与渐变部分相邻的电极。
-
公开(公告)号：US08049276B2
公开(公告)日：2011-11-01
申请号：US12484096
申请日：2009-06-12
IPC分类号： H01L29/66
CPC分类号： H01L29/407 , H01L29/36 , H01L29/8725
摘要： Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conductivity type within a portion of the semiconductor layer. The graded portion is located adjacent to the top surface of the semiconductor layer, and the graded net doping concentration therein decreasing in value with distance from the top surface of the semiconductor layer. The exemplary device also comprises an electrode disposed at the first surface of the semiconductor layer and adjacent to the graded portion.
摘要翻译： 公开了制造半导体器件的半导体器件和方法。 示例性实施例包括第一导电类型的半导体层，其具有在半导体层的一部分内的第一导电类型的第一表面，第二表面和等级净掺杂浓度。 分级部分位于与半导体层的顶表面相邻的位置，并且其中的渐变网络掺杂浓度随距离半导体层的顶表面的距离而减小。 示例性器件还包括设置在半导体层的第一表面并且与渐变部分相邻的电极。
-
5.发明授权Trench-gate field effect transistor with channel enhancement region and methods of forming the same 有权沟道栅场效应晶体管具有沟道增强区及其形成方法公开(公告)号：US07923776B2
公开(公告)日：2011-04-12
申请号：US12698746
申请日：2010-02-02
申请人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
发明人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
IPC分类号： H01L29/772
CPC分类号： H01L29/7827 , H01L21/26586 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A field effect transistor includes a body region of a first conductivity type in a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminating within the semiconductor region. A source region of the second conductivity type extends in the body region adjacent the gate trench. The source region and an interface between the body region and the semiconductor region define a channel region therebetween which extends along the gate trench sidewall. A channel enhancement region of the second conductivity type is formed adjacent the gate trench. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.
摘要翻译： 场效应晶体管包括在第二导电类型的半导体区域中的第一导电类型的体区。 栅极沟槽延伸穿过身体区域并终止在半导体区域内。 第二导电类型的源极区域在与栅极沟槽相邻的体区中延伸。 源极区域和主体区域和半导体区域之间的界面限定其间沿着栅极沟槽侧壁延伸的沟道区域。 第二导电类型的沟道增强区域形成在栅极沟槽附近。 沟道增强区域部分地延伸到沟道区的下部，从而减小沟道区的电阻。
-
公开(公告)号：US08043913B2
公开(公告)日：2011-10-25
申请号：US13075091
申请日：2011-03-29
申请人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
发明人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L21/26586 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A method of forming a field effect transistor includes: forming a trench in a semiconductor region; forming a shield electrode in the trench; performing an angled sidewall implant of impurities of the first conductivity type to form a channel enhancement region adjacent the trench; forming a body region of a second conductivity type in the semiconductor region; and forming a source region of the first conductivity type in the body region, the source region and an interface between the body region and the semiconductor region defining a channel region therebetween, the channel region extending along the trench sidewall. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.
摘要翻译： 形成场效应晶体管的方法包括：在半导体区域中形成沟槽; 在沟槽中形成屏蔽电极; 执行第一导电类型的杂质的成角度的侧壁注入，以形成与沟槽相邻的沟道增强区域; 在半导体区域中形成第二导电类型的体区; 并且在所述体区域中形成所述第一导电类型的源极区域，所述源极区域和所述体区域与所述半导体区域之间的界面在所述体区域中形成沟道区域，所述沟道区域沿着所述沟槽侧壁延伸。 沟道增强区域部分地延伸到沟道区的下部，从而减小沟道区的电阻。
-
公开(公告)号：US20090230465A1
公开(公告)日：2009-09-17
申请号：US12404909
申请日：2009-03-16
申请人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
发明人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
IPC分类号： H01L29/772
CPC分类号： H01L29/7827 , H01L21/26586 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A field effect transistor includes a body region of a first conductivity type over a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminates within the semiconductor region. At least one conductive shield electrode is disposed in the gate trench. A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode. A shield dielectric layer insulates the at lease one conductive shield electrode from the semiconductor region. A gate dielectric layer insulates the gate electrode from the body region. The shield dielectric layer is formed such that it flares out and extends directly under the body region.
摘要翻译： 场效应晶体管包括在第二导电类型的半导体区域上的第一导电类型的体区。 栅极沟槽延伸穿过身体区域并终止在半导体区域内。 至少一个导电屏蔽电极设置在栅极沟槽中。 栅极电极设置在栅极沟槽中，但与至少一个导电屏蔽电极绝缘。 屏蔽介电层绝缘至少一个导电屏蔽电极与半导体区域。 栅极电介质层使栅电极与体区绝缘。 屏蔽电介质层形成为使其伸出并直接延伸到身体区域下方。
-
8.发明申请Power Semiconductor Devices Having Termination Structures and Methods of Manufacture 有权具有终端结构和制造方法的功率半导体器件公开(公告)号：US20080135931A1
公开(公告)日：2008-06-12
申请号：US12032123
申请日：2008-02-15
申请人： Ashok Challa , Alan Elbanhawy , Thomas E. Grebs , Nathan L. Kraft , Dean E. Probst , Rodney S. Ridlay , Steven P. Sapp , Qi Wang , Chongman Yun , J.G. Lee , Peter H. Wilson , Joseph A. Yedinak , J.Y. Jung , H.C. Jang , Babak S. Sanl , Richard Stokes , Gary M. Dolny , John Mytych , Becky Losee , Adam Selsley , Robert Herrick , James J. Murphy , Gordon K. Madson , Bruce D. Marchant , Christopher L. Rexer , Christopher B. Kocon , Debra S. Woolsey
发明人： Ashok Challa , Alan Elbanhawy , Thomas E. Grebs , Nathan L. Kraft , Dean E. Probst , Rodney S. Ridlay , Steven P. Sapp , Qi Wang , Chongman Yun , J.G. Lee , Peter H. Wilson , Joseph A. Yedinak , J.Y. Jung , H.C. Jang , Babak S. Sanl , Richard Stokes , Gary M. Dolny , John Mytych , Becky Losee , Adam Selsley , Robert Herrick , James J. Murphy , Gordon K. Madson , Bruce D. Marchant , Christopher L. Rexer , Christopher B. Kocon , Debra S. Woolsey
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/407 , H01L21/26586 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/6835 , H01L23/4952 , H01L23/49816 , H01L29/0623 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/1095 , H01L29/165 , H01L29/402 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/4933 , H01L29/495 , H01L29/66348 , H01L29/66734 , H01L29/7396 , H01L29/7802 , H01L29/7804 , H01L29/7805 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7815 , H01L29/7828 , H01L29/7831 , H01L2221/6834 , H01L2221/68363 , H01L2224/16 , H01L2924/01012 , H01L2924/01019 , H01L2924/01078 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/1532 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H02M3/00 , H02M3/33592 , H02M7/48 , Y02B70/1475 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material.
摘要翻译： 半导体功率器件包括第一导电类型的漂移区域，在漂移区域上方延伸并且具有与第一导电类型相反的第二导电类型的阱区域，延伸穿过阱区域并进入漂移区域的有源沟槽，源极区域 具有形成在邻近有源沟槽的阱区中的第一导电类型，以及在阱区下延伸并设置在器件的有源区的外边缘处的第一端接沟槽。 有源沟槽的侧壁和底部衬有介电材料，并且基本上填充有形成上电极的第一导电层和形成下电极的第二导电层，上电极设置在下电极之上， 电介质材料。 第一端接沟槽可以衬有一层电介质材料，其比在有源沟槽侧壁上的电介质材料更厚，并且基本上填充有导电材料。
-
公开(公告)号：US07504303B2
公开(公告)日：2009-03-17
申请号：US11441386
申请日：2006-05-24
申请人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
发明人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L21/26586 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A method for forming a shielded gate field effect transistor includes the following steps. Trenches extending into a silicon region are formed using a mask that includes a protective layer. A shield dielectric layer lining sidewalls and bottom of each trench is formed. A shield electrode is formed in a bottom portion of each trench. Protective spacers are formed along upper sidewalls of each trench. An inter-electrode dielectric is formed over the shield electrode. The protective spacers and the protective layer of the mask prevent formation of inter-electrode dielectric along the upper sidewalls of each trench and over mesa surfaces adjacent each trench. A gate electrode is formed in each trench over the inter-electrode dielectric.
摘要翻译： 一种用于形成屏蔽栅极场效应晶体管的方法包括以下步骤。 使用包括保护层的掩模形成延伸到硅区域中的沟槽。 形成在每个沟槽的侧壁和底部内衬的屏蔽电介质层。 屏蔽电极形成在每个沟槽的底部。 保护间隔物沿每个沟槽的上侧壁形成。 在屏蔽电极上形成电极间电介质。 保护间隔物和掩模的保护层防止沿着每个沟槽的上侧壁和与每个沟槽相邻的台面表面形成电极间电介质。 在电极间电介质的每个沟槽中形成栅电极。
-
公开(公告)号：US07416948B2
公开(公告)日：2008-08-26
申请号：US11551992
申请日：2006-10-23
申请人： Nathan L. Kraft , Ashok Challa , Steven P. Sapp , Hamza Yilmaz , Daniel Calafut , Dean E. Probst , Rodney S. Ridley , Thomas E. Grebs , Christopher B. Kocon , Joseph A. Yedinak , Gary M. Dolny
发明人： Nathan L. Kraft , Ashok Challa , Steven P. Sapp , Hamza Yilmaz , Daniel Calafut , Dean E. Probst , Rodney S. Ridley , Thomas E. Grebs , Christopher B. Kocon , Joseph A. Yedinak , Gary M. Dolny
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： A field effect transistor is formed as follows. Trenches are formed in a semiconductor region of a first conductivity type. Each trench is partially filled with one or more materials. A dual-pass angled implant is carried out to implant dopants of a second conductivity type into the semiconductor region through an upper surface of the semiconductor region and through upper trench sidewalls not covered by the one or more material. A high temperature process is carried out to drive the implanted dopants deeper into the mesa region thereby forming body regions of the second conductivity type between adjacent trenches. Source regions of the first conductivity type are then formed in each body region.
摘要翻译： 场效应晶体管如下形成。 沟槽形成在第一导电类型的半导体区域中。 每个沟槽部分地填充有一种或多种材料。 执行双通角度注入以通过半导体区域的上表面和不被一种或多种材料覆盖的上沟槽侧壁将第二导电类型的掺杂剂注入半导体区域。 进行高温处理以将注入的掺杂剂更深地驱动到台面区域中，从而在相邻的沟槽之间形成第二导电类型的体区。 然后在每个身体区域中形成第一导电类型的源区域。
-
-
-
-
-
-
-
-
-
搜索结果
59 条记录 (耗时 0.03 秒)
