公开(公告)号：US07763551B2

公开(公告)日：2010-07-27

申请号：US12059100

申请日：2008-03-31

申请人： Jozef Brcka ,  Song Yun Kang ,  Toshio Nakanishi ,  Peter L. G. Ventzek ,  Minoru Honda ,  Masayuki Kohno

发明人： Jozef Brcka ,  Song Yun Kang ,  Toshio Nakanishi ,  Peter L. G. Ventzek ,  Minoru Honda ,  Masayuki Kohno

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  Y10T29/41

摘要： Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using a radial line slot antenna (RLSA) microwave plasma to deposit SiN by CVD, deposition rate and film uniformity are improved by limiting the amounts of atomic or molecular hydrogen from the gas mixture during the deposition process. A halogen, for example, fluorine, is added to a gas mixture of silane or disilane, ammonia and argon. The halogen scavenges hydrogen from the mixture, and prevents the hydrogen from blocking the nitrogen and silicon atoms and their fragments from bonding to the surface atoms and to grow stoichiometric silicon nitride. Adding the halogen generates free halogen radicals that react with hydrogen to create hydrogen halide, for example, HF or HCl, thereby scavenging the hydrogen.

摘要翻译： 微波等离子体中复合气体混合物中氮化硅的化学气相沉积（CVD）控制了膜厚均匀性和化学计量，沉积速率增加。 在使用径向线槽天线（RLSA）微波等离子体通过CVD沉积SiN的Si 2 H 6 + NH 3 + Ar气体混合物中，通过在沉积过程中限制来自气体混合物的原子或分子氢的量来提高沉积速率和膜均匀性。 将卤素，例如氟加入到硅烷或乙硅烷，氨和氩的气体混合物中。 卤素从混合物中清除氢，并且防止氢阻挡氮和硅原子及其片段与表面原子结合并生长化学计量的氮化硅。 加入卤素产生与氢反应产生卤化氢，例如HF或HCl的游离卤素自由基，从而清除氢。

公开(公告)号：US20090241310A1

公开(公告)日：2009-10-01

申请号：US12059100

申请日：2008-03-31

申请人： Jozef Brcka ,  Song Yun Kang ,  Toshio Nakanishi ,  Peter L.G. Ventzek ,  Minoru Honda ,  Masayuki Kohno

发明人： Jozef Brcka ,  Song Yun Kang ,  Toshio Nakanishi ,  Peter L.G. Ventzek ,  Minoru Honda ,  Masayuki Kohno

IPC分类号： H01L21/00 ,  B66C17/08

CPC分类号： C23C16/345 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  Y10T29/41

摘要： Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using a radial line slot antenna (RLSA) microwave plasma to deposit SiN by CVD, deposition rate and film uniformity are improved by limiting the amounts of atomic or molecular hydrogen from the gas mixture during the deposition process. A halogen, for example, fluorine, is added to a gas mixture of silane or disilane, ammonia and argon. The halogen scavenges hydrogen from the mixture, and prevents the hydrogen from blocking the nitrogen and silicon atoms and their fragments from bonding to the surface atoms and to grow stoichiometric silicon nitride. Adding the halogen generates free halogen radicals that react with hydrogen to create hydrogen halide, for example, HF or HCl, thereby scavenging the hydrogen.

摘要翻译： 微波等离子体中复合气体混合物中氮化硅的化学气相沉积（CVD）控制了膜厚均匀性和化学计量，沉积速率增加。 在使用径向线槽天线（RLSA）微波等离子体通过CVD沉积SiN的Si 2 H 6 + NH 3 + Ar气体混合物中，通过在沉积过程中限制来自气体混合物的原子或分子氢的量来提高沉积速率和膜均匀性。 将卤素，例如氟加入到硅烷或乙硅烷，氨和氩的气体混合物中。 卤素从混合物中清除氢，并且防止氢阻挡氮和硅原子及其片段与表面原子结合并生长化学计量的氮化硅。 加入卤素产生与氢反应产生卤化氢，例如HF或HCl的游离卤素自由基，从而清除氢。

公开(公告)号：US20130217210A1

公开(公告)日：2013-08-22

申请号：US13823690

申请日：2012-07-31

申请人： Jozef Brcka ,  Jacques Faguet ,  Eric M. Lee ,  Hongyu Yue

发明人： Jozef Brcka ,  Jacques Faguet ,  Eric M. Lee ,  Hongyu Yue

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： C23C16/50 ,  A61F2/00 ,  B03C5/005 ,  B03C5/026 ,  C12M3/00 ,  C12M21/08 ,  C12M33/00 ,  C23C16/04 ,  C23C16/48 ,  H01J37/32009 ,  H01J37/32697 ,  H01L21/02612 ,  H01L21/67011

摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

公开(公告)号：US20130192990A1

公开(公告)日：2013-08-01

申请号：US13823701

申请日：2012-07-31

申请人： Jozef Brcka

发明人： Jozef Brcka

IPC分类号： A61F2/00

CPC分类号： C23C16/50 ,  A61F2/00 ,  B03C5/005 ,  B03C5/026 ,  C12M3/00 ,  C12M21/08 ,  C12M33/00 ,  C23C16/04 ,  C23C16/48 ,  H01J37/32009 ,  H01J37/32697 ,  H01L21/02612 ,  H01L21/67011

摘要： A method and apparatus are provided for constructing tissue from cells or other objects by application of temporally and spatially controlled electric fields. Electric field applicators expose a substrate (32) to the electric field controlled to affect the processing medium (28) to achieve a processing effect on the construction of tissue on the substrate (32). Electrical bias is selected to interact with dipole properties of the medium (28) to control the movement of suspended dielectrophoretic cells or other particles in the medium (28) or at the substrate (32). The motion of suspended particles may be affected to cause suspended particles of different properties to follow different paths in the processing medium (28), which may be used to cause the suspended particles to be sorted. The processing medium (28) and electrical bias may be selected to affect the structure, or orientation, of one or more layers on the substrate (32).

摘要翻译： 提供了一种用于通过应用时间和空间控制的电场从电池或其他物体构造组织的方法和装置。 电场施加器将衬底（32）暴露于被控制以影响处理介质（28）的电场，以实现对衬底（32）上的组织的构造的处理效果。 选择电偏压以与介质（28）的偶极子性质相互作用，以控制介质（28）或基板（32）上的悬浮介电泳细胞或其它颗粒的运动。 悬浮颗粒的运动可能受到影响，导致不同性质的悬浮颗粒遵循处理介质（28）中不同的路径，可用于引起悬浮颗粒的分选。 可以选择处理介质（28）和电偏压来影响衬底（32）上的一个或多个层的结构或取向。

公开(公告)号：US08092658B2

公开(公告)日：2012-01-10

申请号：US11835067

申请日：2007-08-07

申请人： Jozef Brcka

发明人： Jozef Brcka

IPC分类号： C23C14/34

CPC分类号： C23C14/046

摘要： A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm−3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.

摘要翻译： 描述了一种沉积系统及其操作方法，用于使用高密度等离子体沉积具有高纵横比特征的保形金属或其它类似的响应性涂层膜。 沉积系统包括等离子体源和用于形成等离子体并将金属蒸气引入沉积系统的分布金属源。 沉积系统被配置为形成具有等离子体密度并产生具有金属密度的金属蒸气的等离子体，其中金属密度与靠近基底的等离子体密度之比小于或等于1。 该比例应至少存在于距衬底表面约一定距离内，该衬底的表面直径约为衬底直径的百分之二十。 在所述衬底的表面上基本上跨越正或负百分之二十五的均匀的比例是理想的。 该比例对于超过1012cm-3的等离子体密度特别有效，并且用于在具有小于特征宽度的一半的最大膜厚度的纳米尺度特征的基底上沉积膜，例如在特征宽度的10％。

公开(公告)号：US20110244128A1

公开(公告)日：2011-10-06

申请号：US12751784

申请日：2010-03-31

申请人： Jozef Brcka ,  Jacques Faguet

发明人： Jozef Brcka ,  Jacques Faguet

IPC分类号： C23C16/44 ,  C23C16/00 ,  B23P15/00 ,  G06G7/50

CPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/45591 ,  C23C16/46 ,  Y10T29/49

摘要： A filament assisted chemical vapor deposition (FACVD) system. The FACVD system includes a gas distribution assembly, heater filament assembly, and a flow plate that is disposed between the gas distribution assembly and the heater filament assembly. The heater filament assembly and the flow plate have a corresponding extent across a dimension of the reactor and are separated by different distances across that extent.

摘要翻译： 长丝辅助化学气相沉积（FACVD）系统。 FACVD系统包括气体分配组件，加热器丝组件和设置在气体分配组件和加热丝组件之间的流动板。 加热器灯丝组件和流动板在反应器的尺寸上具有相应的范围，并且在该范围内被分开不同的距离。

公开(公告)号：US07771562B2

公开(公告)日：2010-08-10

申请号：US11563399

申请日：2006-11-27

申请人： Jozef Brcka

发明人： Jozef Brcka

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： An integrated capacitively-coupled and inductively-coupled device is provided for plasma etching that may be used as a primary or secondary source for generating a plasma to etch substrates. The device is practical for processing advanced semiconductor devices and integrated circuits that require uniform and dense plasma. The invention may be embodied in an apparatus that contains a substrate support, typically including an electrostatic chuck, that controls ion energy by capacitively coupling RF power to the plasma and generating voltage bias on the wafer relative to the plasma potential. An etching electrode is provided opposite the substrate support. An integrated inductive coupling element is provided at the perimeter of the etching electrode that increases plasma density at the perimeter of the wafer, compensating for the radial loss of charged particles toward chamber walls, to produce uniform plasma density above the processed wafer. The device has a capacitive coupling zone in its center for energizing etching ions and an inductive coupling zone at its perimeter of the wafer. Both zones together with plasma create a resonant circuit with the plasma.

摘要翻译： 提供用于等离子体蚀刻的集成电容耦合和电感耦合器件，其可以用作用于产生等离子体以蚀刻衬底的初级或次级源。 该器件适用于需要均匀和致密等离子体的先进半导体器件和集成电路。 本发明可以体现在一种装置中，该装置包含通常包括静电卡盘的基板支架，其通过将RF功率电容耦合到等离子体并且相对于等离子体电位产生晶片上的电压偏置来控制离子能量。 在衬底支撑件相对设置蚀刻电极。 在蚀刻电极的周边处提供集成的电感耦合元件，其增加晶片周边处的等离子体密度，补偿带电粒子朝向室壁的径向损耗，以在处理的晶片之上产生均匀的等离子体密度。 该器件在其中心具有电容耦合区，用于激励蚀刻离子和在晶片周边的感应耦合区。 两个区域与等离子体一起产生与等离子体的谐振电路。

公开(公告)号：US07566477B2

公开(公告)日：2009-07-28

申请号：US11096156

申请日：2005-03-31

申请人： Jozef Brcka

发明人： Jozef Brcka

IPC分类号： C23C16/00 ,  C23C16/06

CPC分类号： C23C16/4481 ,  C23C16/16 ,  C23C16/45523

摘要： A system and method for vaporizing a solid film precursor and transporting the film precursor vapor using a precursor valve system to control delivery. The film precursor vaporization system is positioned above and coupled to the process chamber. The precursor valve system, coupled to the film precursor vaporization system, is utilized to open and close the flow of film precursor vapor from the film precursor vaporization system to the process chamber.

摘要翻译： 用于蒸发固体膜前体并使用前体阀系统输送膜前体蒸气以控制输送的系统和方法。 膜前体蒸发系统位于处理室上方并且耦合到处理室。 耦合到膜前体蒸发系统的前体阀系统用于打开和关闭膜前体蒸气从膜前体蒸发系统到处理室的流动。

公开(公告)号：US20080081482A1

公开(公告)日：2008-04-03

申请号：US11536902

申请日：2006-09-29

申请人： Jozef Brcka ,  Rodney L. Robison ,  Takashi Horiuchi

发明人： Jozef Brcka ,  Rodney L. Robison ,  Takashi Horiuchi

IPC分类号： H01L21/302 ,  G01C25/00 ,  G01F25/00

CPC分类号： H01J37/3299 ,  H01J37/32935 ,  H01L22/12 ,  H01L22/20

摘要： Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition structures for calibrating a plasma process. The selective-redeposition structures receive a controllable and/or measurable amount of redeposited material during the plasma process.

摘要翻译： 用于校准在诸如电离物理气相沉积装置的等离子体处理装置中进行的等离子体处理的校准晶片和方法。 校准晶片包括用于校准等离子体工艺的一个或多个选择性再沉积结构。 选择性再沉积结构在等离子体工艺期间接收可控和/或可测量的再沉积材料。

公开(公告)号：US20070131544A1

公开(公告)日：2007-06-14

申请号：US11302768

申请日：2005-12-14

申请人： Jozef Brcka ,  Rodney Robison

发明人： Jozef Brcka ,  Rodney Robison

IPC分类号： C23C14/00

CPC分类号： C23C14/358 ,  H01J37/321 ,  H01J37/32495 ,  H01J37/32623 ,  H01J37/32633

摘要： Enhanced reliability and performance stability of a deposition baffle is provided in ionized physical vapor deposition (iPVD) processing tool in which a high density plasma is coupled into a chamber from an external antenna through a dielectric window. A deposition baffle with slots protects the window. The deposition baffle has slots through it. The width of the slots at the window side of the baffle is different from the width of the slots at the plasma side of the baffle. Preferably, the ratio of width of the slots at the window side is preferably less than the width at the plasma side. The slots have sidewalls at the plasma side that are arc spray coated. The ratio of the baffle thickness to slot width, or the slot's aspect ratio, is less than 8:1, and preferably less than 6:1. The deposition baffle is spaced less than 1 mm from the window, and preferably less than 0.5 mm from the window.

摘要翻译： 在电离物理气相沉积（iPVD）处理工具中提供了沉积挡板的增强的可靠性和性能稳定性，其中高密度等离子体通过电介质窗从外部天线耦合到室中。 具有槽的沉积挡板保护窗户。 沉积挡板具有通过其的槽。 挡板窗口侧的槽宽度与挡板等离子体侧的槽宽不同。 优选地，窗口侧的狭槽的宽度比优选小于等离子体侧的宽度。 槽在等离子体侧具有被电弧喷涂的侧壁。 挡板厚度与槽宽度的比率或槽的长宽比小于8:1，优选小于6:1。 沉积挡板距离窗口间隔小于1mm，并且优选地距离窗口小于0.5mm。