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    On-die termination circuit and method for semiconductor memory apparatus
    1.
    发明授权
    On-die termination circuit and method for semiconductor memory apparatus 有权
    半导体存储装置的片上终端电路和方法

    公开(公告)号：US07525337B2

    公开(公告)日：2009-04-28

    申请号：US11602284

    申请日：2006-11-21

    申请人： Jung-Hoon Park ,  Sun-Suk Yang

    发明人： Jung-Hoon Park ,  Sun-Suk Yang

    IPC分类号： H03K17/16 ,  H03K19/003

    CPC分类号： H03K19/0005 ,  G11C5/063 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1078 ,  G11C7/1084 ,  H04L25/0272 ,  H04L25/0298 ,  H04L25/063

    摘要： An on-die termination circuit for semiconductor memory apparatus includes an ODT (On Die Termination) input driving unit that divides an input voltage on the basis of a resistance ratio according to a first code Pcode having at least two bits and outputs a first line voltage, a first ODT control unit that counts the first code or resets the first code to a first set value according to whether or not the first line voltage and a reference voltage match with each other, an ODT output driving unit that divides an input voltage on the basis of the resistance ratio according to the first code and a resistance ratio according to a second code having at least two bits and outputs a second line voltage, and a second ODT control unit that counts the second code or resets the second code to a second set value according to whether or not the second line voltage and the reference voltage are consistent with each other.

    摘要翻译： 用于半导体存储装置的片上终端电路包括：ODT（On Die Termination）输入驱动单元，其根据具有至少两个位的第一代码Pcode <0：N>根据电阻比分割输入电压，以及 输出第一线电压，第一ODT控制单元，其对第一代码进行计数，或者根据第一线电压和参考电压是否彼此匹配来将第一代码重置为第一设定值; ODT输出驱动单元， 根据第一代码和电阻比根据具有至少两个比特的第二代码并输出第二线电压的电阻比分压输入电压，以及计数第二代码或复位的第二ODT控制单元 根据第二线电压和参考电压是否彼此一致，将第二代码设置为第二设定值。

    On-die termination circuit and method for semiconductor memory apparatus
    2.
    发明申请
    On-die termination circuit and method for semiconductor memory apparatus 有权
    半导体存储装置的片上终端电路和方法

    公开(公告)号：US20070146004A1

    公开(公告)日：2007-06-28

    申请号：US11602284

    申请日：2006-11-21

    申请人： Jung-Hoon Park ,  Sun-Suk Yang

    发明人： Jung-Hoon Park ,  Sun-Suk Yang

    IPC分类号： H03K19/003

    CPC分类号： H03K19/0005 ,  G11C5/063 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1078 ,  G11C7/1084 ,  H04L25/0272 ,  H04L25/0298 ,  H04L25/063

    摘要： An on-die termination circuit for semiconductor memory apparatus includes an ODT (On Die Termination) input driving unit that divides an input voltage on the basis of a resistance ratio according to a first code Pcode having at least two bits and outputs a first line voltage, a first ODT control unit that counts the first code or resets the first code to a first set value according to whether or not the first line voltage and a reference voltage match with each other, an ODT output driving unit that divides an input voltage on the basis of the resistance ratio according to the first code and a resistance ratio according to a second code having at least two bits and outputs a second line voltage, and a second ODT control unit that counts the second code or resets the second code to a second set value according to whether or not the second line voltage and the reference voltage are consistent with each other.

    摘要翻译： 用于半导体存储装置的片上终端电路包括：ODT（On Die Termination）输入驱动单元，其根据具有至少两个位的第一代码Pcode <0：N>根据电阻比分割输入电压，以及 输出第一线电压，第一ODT控制单元，其对第一代码进行计数，或者根据第一线电压和参考电压是否彼此匹配来将第一代码重置为第一设定值; ODT输出驱动单元， 根据第一代码和电阻比根据具有至少两个比特的第二代码并输出第二线电压的电阻比分压输入电压，以及计数第二代码或复位的第二ODT控制单元 根据第二线电压和参考电压是否彼此一致，将第二代码设置为第二设定值。

    Phase change memory device
    4.
    发明授权
    Phase change memory device 有权
    相变存储器件

    公开(公告)号：US07906773B2

    公开(公告)日：2011-03-15

    申请号：US12382781

    申请日：2009-03-24

    申请人： Seung-Pil Ko ,  Jae-Hee Oh ,  Jung-Hoon Park ,  Yoon-Jong Song ,  Jae-Hyun Park ,  Dong-Won Lim

    发明人： Seung-Pil Ko ,  Jae-Hee Oh ,  Jung-Hoon Park ,  Yoon-Jong Song ,  Jae-Hyun Park ,  Dong-Won Lim

    IPC分类号： H01L21/00

    CPC分类号： H01L45/144 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1683

    摘要： A semiconductor device includes an insulating layer on a substrate, a first electrode in the insulating layer having a first upper surface and a second upper surface, a second electrode in the insulating layer spaced apart from the first electrode by a first distance and having a third upper surface and a fourth upper surface, the third upper surface being disposed at a substantially same level as the first upper surface, and the fourth upper surface being disposed at a substantially same level as the second upper surface, a first phase change material pattern covering a part of the first upper surface of the first electrode, and a second phase change material pattern covering a part of the third upper surface of the second electrode, wherein an interface region between the second phase change pattern and the second electrode is spaced apart from an interface region between the first phase change pattern and the first electrode by a second distance greater than the first distance.

    摘要翻译： 半导体器件在衬底上包括绝缘层，绝缘层中的第一电极具有第一上表面和第二上表面，绝缘层中的第二电极与第一电极隔开第一距离，并具有第三距离 上表面和第四上表面，所述第三上表面设置在与所述第一上表面基本相同的高度，所述第四上表面设置在与所述第二上表面基本相同的水平面上，所述第一相变材料图案覆盖 第一电极的第一上表面的一部分和覆盖第二电极的第三上表面的一部分的第二相变材料图案，其中第二相变图案和第二电极之间的界面区域与 所述第一相变图案和所述第一电极之间的界面区域大于所述第一距离的第二距离。

    Semiconductor memory device
    5.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US07889595B2

    公开(公告)日：2011-02-15

    申请号：US12346134

    申请日：2008-12-30

    申请人： Jung-Hoon Park

    发明人： Jung-Hoon Park

    IPC分类号： G11C8/00

    CPC分类号： G11C7/1072 ,  G11C7/1078 ,  G11C7/109 ,  G11C7/1093 ,  G11C7/22 ,  G11C7/222 ,  G11C8/18 ,  G11C2207/2254 ,  H03L7/00

    摘要： A semiconductor memory device includes a clock inputting unit configured to receive a system clock and a data clock, a clock dividing unit configured to divide a frequency of the data clock to generate a data division clock and determining a phase of the data division clock according to a division control signal, a phase dividing unit configured to generate a plurality of multiple-phase data division clocks each having a predetermined phase difference according to the data division clock, and a first phase detecting unit configured to detect a phase of the system clock based on a predetermined selection clock among the multiple-phase data division clocks, and generate the division control signal according to the detection result.

    摘要翻译： 一种半导体存储器件，包括：时钟输入单元，被配置为接收系统时钟和数据时钟;时钟分频单元，被配置为分频数据时钟的频率以产生数据分频时钟，并根据 分割控制信号，相位分割单元，被配置为根据数据分时钟产生各自具有预定相位差的多个多相数据分时钟;第一相位检测单元，被配置为基于系统时钟的相位检测 在多相数据分时钟之间的预定选择时钟上，并根据检测结果产生除法控制信号。

    On-die termination circuit of semiconductor memory apparatus
    6.
    发明授权
    On-die termination circuit of semiconductor memory apparatus 有权
    半导体存储装置的片上终端电路

    公开(公告)号：US07800397B2

    公开(公告)日：2010-09-21

    申请号：US11878924

    申请日：2007-07-27

    申请人： Jung-Hoon Park

    发明人： Jung-Hoon Park

    IPC分类号： H03K17/16 ,  H03K19/003

    CPC分类号： G11C7/1051 ,  G11C5/063 ,  G11C7/1057 ,  H03K19/0005

    摘要： An on-die termination circuit of a semiconductor memory apparatus includes a comparator that compares a voltage corresponding to a normal code with a reference voltage to output a comparison signal. A code adjusting unit varies the normal code according to the comparison signal, outputs the varied normal code, and resets the normal code to a predetermined reset code or a variable fuse code.

    摘要翻译： 半导体存储装置的片上终端电路包括比较器，其将与正常码相对应的电压与参考电压进行比较，以输出比较信号。 代码调整单元根据比较信号改变普通代码，输出变化的普通代码，并将普通代码复位到预定的复位代码或可变的熔丝代码。

    Non-volatile memory devices and methods of programming the same
    7.
    发明授权
    Non-volatile memory devices and methods of programming the same 有权
    非易失性存储器件和编程方法相同

    公开(公告)号：US07502263B2

    公开(公告)日：2009-03-10

    申请号：US11606285

    申请日：2006-11-30

    申请人： Jung-Hoon Park

    发明人： Jung-Hoon Park

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0483 ,  G11C8/08 ,  G11C16/12

    摘要： A non-volatile semiconductor memory device and method of programming the non-volatile semiconductor memory device are disclosed. The non-volatile semiconductor memory device includes a selected word-line and unselected word-lines including at least one unselected word-line to which a first voltage signal is applied. The selected word-line is coupled to a selected memory transistor and receives a program voltage signal in response to a program voltage enable signal. A first voltage signal is applied to the at least one unselected word-line. The first voltage signal has a voltage level of a reduced pass voltage signal before the program voltage enable signal is activated and has a voltage level of a pass voltage signal while the program voltage enable signal is activated.

    摘要翻译： 公开了非易失性半导体存储器件和非易失性半导体存储器件的编程方法。 非易失性半导体存储器件包括选择的字线和包括施加了第一电压信号的至少一个未选择字线的未选择字线。 所选择的字线被耦合到选定的存储晶体管，并且响应于编程电压使能信号而接收编程电压信号。 第一电压信号被施加到至少一个未选择的字线。 第一电压信号在编程电压使能信号被激活之前具有降低的通过电压信号的电压电平，并且在编程电压使能信号被激活时具有通过电压信号的电压电平。

    FERROELECTRIC RANDOM ACCESS MEMORY AND METHODS OF FABRICATING THE SAME
    8.
    发明申请
    FERROELECTRIC RANDOM ACCESS MEMORY AND METHODS OF FABRICATING THE SAME 审中-公开
    电磁随机存取存储器及其制造方法

    公开(公告)号：US20080087926A1

    公开(公告)日：2008-04-17

    申请号：US11853039

    申请日：2007-09-11

    申请人： Jung-Hoon Park ,  Heung-Jin Joo

    发明人： Jung-Hoon Park ,  Heung-Jin Joo

    IPC分类号： H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/57

    摘要： A method of forming a ferroelectric random access memory includes sequentially forming a conductive pattern, an etch-stop layer, a ferroelectric capacitor and an interlayer dielectric on a semiconductor substrate, which includes a first region and a second region. The ferroelectric capacitor is formed on the first region and the conductive pattern is formed on the second region. The interlayer dielectric is patterned to simultaneously form a first opening to expose a top surface of the ferroelectric capacitor and a second opening to expose a top surface of the etch-stop layer. The patterned interlayer dielectric is annealed in an ambient atmosphere, including oxygen atoms. The etch-stop layer exposed through the second opening is etched to expose a top surface of the conductive pattern. First and second top plugs are formed to connect to the ferroelectric capacitor and the conductive pattern through the first and second openings, respectively.

    摘要翻译： 形成铁电随机存取存储器的方法包括：在包括第一区域和第二区域的半导体衬底上依次形成导电图案，蚀刻停止层，铁电电容器和层间电介质。 铁电电容器形成在第一区域上，导电图案形成在第二区域上。 图案化层间电介质以同时形成第一开口以暴露铁电电容器的顶表面和第二开口以暴露蚀刻停止层的顶表面。 图案化的层间电介质在包括氧原子的环境气氛中退火。 通过第二开口暴露的蚀刻停止层被蚀刻以暴露导电图案的顶表面。 形成第一和第二顶部插头，以分别通过第一和第二开口连接到铁电电容器和导电图案。

    FeRAM device and method for manufacturing the same
    9.
    发明授权
    FeRAM device and method for manufacturing the same 失效
    FeRAM器件及其制造方法

    公开(公告)号：US07294876B2

    公开(公告)日：2007-11-13

    申请号：US11325633

    申请日：2006-01-03

    申请人： Heung-Jin Joo ,  Bon-Jae Koo ,  Jung-Hoon Park

    发明人： Heung-Jin Joo ,  Bon-Jae Koo ,  Jung-Hoon Park

    IPC分类号： H01L29/76 ,  H01L21/8242

    CPC分类号： H01L27/11507 ,  H01L21/76846 ,  H01L21/7687 ,  H01L27/11502 ,  H01L28/57 ,  H01L28/65

    摘要： An embodiment of the FeRAM includes a ferroelectric capacitor including a bottom electrode, a ferroelectric layer, and a top electrode. Strontium ruthenium oxide is formed between the bottom electrode and the ferroelectric layer and between the ferroelectric layer and the top electrode. A diffusion barrier layer including strontium ruthenium oxide and iridium is formed between the top electrode and a direct cell contact plug coupled to a plate line interconnecting top electrodes of ferroelectric capacitors. Thus, diffusion of nitrogen or metallic materials produced in subsequent processes is suppressed to prevent degradation of the ferroelectric layer.

    摘要翻译： FeRAM的一个实施例包括具有底部电极，铁电体层和顶部电极的铁电电容器。 在底电极和铁电层之间以及铁电层和顶电极之间形成氧化钌。 包括氧化钌和铱的扩散阻挡层形成在顶部电极和连接到互连铁电电容器的顶部电极的板线的直接电池接触插塞之间。 因此，抑制了在后续工艺中产生的氮或金属材料的扩散以防止铁电层的劣化。

    Apparatus for on-die termination of semiconductor memory and method of operating the same
    10.
    发明申请
    Apparatus for on-die termination of semiconductor memory and method of operating the same 有权
    用于半导体存储器的管芯端接的装置及其操作方法

    公开(公告)号：US20070236248A1

    公开(公告)日：2007-10-11

    申请号：US11646467

    申请日：2006-12-28

    申请人： Jung-Hoon Park

    发明人： Jung-Hoon Park

    IPC分类号： H03K17/16

    CPC分类号： G11C7/1048 ,  G11C5/063 ,  G11C2207/2254 ,  H04L25/0298

    摘要： The apparatus for on-die termination of a semiconductor memory includes a first ODT (On-Die Termination) voltage generating unit that outputs a first line voltage by calibrating an input voltage with a resistance ratio according to a first code having at least two bits; a first code calibrating unit that counts the first code according to the result of a comparison between the first line voltage and a reference voltage, stops the code count when the first code reaches a maximum value or a minimum value, and stores a code value based on a final count; a second ODT voltage generating unit that outputs a second line voltage by calibrating an input voltage with a resistance ratio according to the first code and a second code having at least two bits; and a second code calibrating unit that counts the second code according to the result of a comparison between the second line voltage and the reference voltage, stops the code count when the second code reaches the maximum value or the minimum value, and stores a code value based on a final count.

    摘要翻译： 用于半导体存储器的管芯端接的装置包括：第一ODT（片上端接）电压产生单元，其通过根据具有至少两个位的第一代码的电阻比校准具有电阻比的输出电压来输出第一线电压; 第一代码校准单元，根据第一线电压和参考电压之间的比较结果对第一代码进行计数，当第一代码达到最大值或最小值时停止代码计数，并存储基于代码值的代码值 最后一个数字 第二ODT电压产生单元，通过根据第一代码校准具有电阻比的输入电压和具有至少两个比特的第二代码来输出第二线路电压; 以及第二代码校准单元，其根据第二线电压和参考电压之间的比较结果对第二代码进行计数，当第二代码达到最大值或最小值时停止代码计数，并且存储代码值 基于最终计数。