公开(公告)号：US07164147B2

公开(公告)日：2007-01-16

申请号：US10839261

申请日：2004-05-06

申请人： Jung-hyun Lee ,  Young-soo Park ,  Won-tae Lee

发明人： Jung-hyun Lee ,  Young-soo Park ,  Won-tae Lee

IPC分类号： H01L29/02

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a heating portion interposed between a transistor and a data storing portion, and a metal interconnection layer connected to the data storing portion. The data storing portion includes a chalcogenide material layer which undergoes a phase change due to heating of the heating portion to store data therein. The heating material layer is disposed under the chalcogenide material layer, and the top surface of the heating material layer is oxidized using a plasma oxidation process to increase a resistance value. Accordingly, the heat capacity necessary for the chalcogenide material layer can be transmitted using a small amount of current, and current used in the semiconductor memory device can be further reduced.

摘要翻译： 提供一种半导体存储器件及其制造方法。 半导体存储器件包括插入在晶体管和数据存储部分之间的加热部分和连接到数据存储部分的金属互连层。 数据存储部分包括由加热部分的加热而发生相变以在其中存储数据的硫族化物材料层。 加热材料层设置在硫族化物材料层的下方，利用等离子体氧化法使发热体层的顶面氧化，使电阻值增大。 因此，可以使用少量的电流来传输硫族化物材料层所需的热容量，并且可以进一步减少在半导体存储器件中使用的电流。

公开(公告)号：US07501307B2

公开(公告)日：2009-03-10

申请号：US11650972

申请日：2007-01-09

申请人： Jung-hyun Lee ,  Young-soo Park ,  Won-tae Lee

发明人： Jung-hyun Lee ,  Young-soo Park ,  Won-tae Lee

IPC分类号： H01L21/00

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storing portion, wherein the data storing portion includes a chalcogenide material layer, which undergoes a phase change due to a heating of the heating portion, for storing data therein.

摘要翻译： 在半导体存储器件及其制造方法中，具有晶体管和数据存储部分的半导体存储器件包括夹在晶体管和数据存储部分之间的加热部分和连接到数据存储部分的金属互连层， 其中所述数据存储部分包括由于所述加热部分的加热而发生相变的硫族化物材料层，用于在其中存储数据。

公开(公告)号：US20070108433A1

公开(公告)日：2007-05-17

申请号：US11650972

申请日：2007-01-09

申请人： Jung-hyun Lee ,  Young-soo Park ,  Won-tae Lee

发明人： Jung-hyun Lee ,  Young-soo Park ,  Won-tae Lee

IPC分类号： H01L47/00

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storing portion, wherein the data storing portion includes a chalcogenide material layer, which undergoes a phase change due to a heating of the heating portion, for storing data therein.

摘要翻译： 在半导体存储器件及其制造方法中，具有晶体管和数据存储部分的半导体存储器件包括夹在晶体管和数据存储部分之间的加热部分和连接到数据存储部分的金属互连层， 其中所述数据存储部分包括由于所述加热部分的加热而发生相变的硫族化物材料层，用于在其中存储数据。

公开(公告)号：US07789992B2

公开(公告)日：2010-09-07

申请号：US11414417

申请日：2006-05-01

申请人： Won-tae Lee

发明人： Won-tae Lee

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC分类号： H01J37/32422 ,  H01J37/321 ,  H01J37/32357

摘要： A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma generation area; a first channel fluidly communicating the first opening with the plasma generation area; a second channel fluidly communicating the second opening with the plasma generation area; a coil disposed on an outer surface of the first chamber and which generates a magnetic field to generate a plasma in the plasma generation area; and an acceleration part disposed within the first and second chambers and configured to separate the plasma into a positive ion and an electron, accelerate the positive ion and the electron, and discharge the positive ion and electron through the first and the second channels.

摘要翻译： 提供了用于分离和加速等离子体的中性束蚀刻装置。 该装置包括：第一室，具有在其一侧形成的第一开口; 第二室，具有在其一侧形成的第二开口，并设置在第一室内，形成等离子体产生区域; 使第一开口与等离子体产生区域流体连通的第一通道; 使所述第二开口与所述等离子体产生区域流体连通的第二通道; 设置在所述第一室的外表面上并在所述等离子体产生区域中产生磁场以产生等离子体的线圈; 以及加速部，其设置在所述第一和第二室内并且被配置为将所述等离子体分离成正离子和电子，加速所述正离子和所述电子，并且通过所述第一和第二通道排出所述正离子和电子。

公开(公告)号：US20070013284A1

公开(公告)日：2007-01-18

申请号：US11406341

申请日：2006-04-19

申请人： Won-tae Lee

发明人： Won-tae Lee

IPC分类号： H01J17/26 ,  H01J61/28

CPC分类号： H05H1/54 ,  H01J27/16 ,  H01J37/32357 ,  H01J37/32467

摘要： A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a channel comprising an inner wall, an outer wall spaced apart from the inner wall by a distance for encircling the inner wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas to generate a plasma beam and to accelerate the generated plasma beam toward the outlet port, wherein a coating layer comprising a first layer composed of a carbon nano tube is formed on at least one of the inner wall, the outer wall, and the end wall of the channel.

摘要翻译： 提供了一种等离子体加速装置和具有该等离子体加速装置的等离子体处理系统。 该装置包括一个通道，该通道包括内壁，与内壁隔开一定距离以围绕内壁的外壁，以及连接到内壁和外壁的端部的端壁，以形成出口 墙的另一端; 气体供给部，其向所述通道的内部供给气体; 以及等离子体产生和加速部分，以向气体供应电离能以产生等离子体束并且将所产生的等离子体束加速到出口，其中包括由碳纳米管组成的第一层的涂层至少形成 通道的内壁，外壁和端壁中的一个。

公开(公告)号：US07602111B2

公开(公告)日：2009-10-13

申请号：US11406341

申请日：2006-04-19

申请人： Won-tae Lee

发明人： Won-tae Lee

IPC分类号： H01J27/00 ,  C23C14/00 ,  C23F1/02 ,  H01J7/24

CPC分类号： H05H1/54 ,  H01J27/16 ,  H01J37/32357 ,  H01J37/32467

摘要： A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a channel comprising an inner wall, an outer wall spaced apart from the inner wall by a distance for encircling the inner wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas to generate a plasma beam and to accelerate the generated plasma beam toward the outlet port, wherein a coating layer comprising a first layer composed of a carbon nano tube is formed on at least one of the inner wall, the outer wall, and the end wall of the channel.

摘要翻译： 提供了一种等离子体加速装置和具有该等离子体加速装置的等离子体处理系统。 该装置包括一个通道，该通道包括内壁，与内壁隔开一定距离以围绕内壁的外壁，以及连接到内壁和外壁的端部的端壁，以形成出口 墙的另一端; 气体供给部，其向所述通道的内部供给气体; 以及等离子体产生和加速部分，以向气体供应电离能以产生等离子体束并且将所产生的等离子体束加速到出口，其中包括由碳纳米管组成的第一层的涂层至少形成 通道的内壁，外壁和端壁中的一个。

公开(公告)号：US06756733B2

公开(公告)日：2004-06-29

申请号：US10107244

申请日：2002-03-28

申请人： Young-mo Kim ,  Hidekazu Hatanaka ,  Won-tae Lee ,  Yoon-jeong Lee

发明人： Young-mo Kim ,  Hidekazu Hatanaka ,  Won-tae Lee ,  Yoon-jeong Lee

IPC分类号： H01J1749

CPC分类号： H01J11/12 ,  H01J11/40

摘要： In a plasma display panel, front and rear substrates are arranged separated a predetermined distance from each other and to face each other, forming a discharge space. A plurality of first electrodes are formed on an inner surface of the rear substrate. A first dielectric layer is formed on the inner surface of the rear substrate to cover the first electrodes. A plurality of barrier ribs are formed between the first electrodes on the inner surface of the rear substrate, sectioning the discharge space. A fluorescent substance layer is formed on a surface of the first dielectric layer and side surfaces of the barrier ribs. A first protective film formed on the surface of the first fluorescent layer. A plurality of second electrodes are formed corresponding to the first electrodes on an inner surface of the front substrate. A second dielectric layer formed on the inner surface of the front substrate to cover the second electrodes. A second fluorescent layer formed on the surface of the second dielectric layer. A second protective film is formed on the surface of the second fluorescent layer. A predetermined discharge gas sealed in the discharge space. Thus, a discharge voltage can be reduced and deterioration of fluorescent substance can be prevented. Also, generation of visual rays increases to improve brightness.

摘要翻译： 在等离子体显示面板中，将前后基板配置成彼此分开预定距离并且彼此面对，形成放电空间。 多个第一电极形成在后基板的内表面上。 在后基板的内表面上形成第一电介质层以覆盖第一电极。 在后基板的内表面上的第一电极之间形成多个隔肋，对放电空间进行切片。 在第一电介质层的表面和隔壁的侧面形成有荧光物质层。 形成在第一荧光层的表面上的第一保护膜。 在前基板的内表面上对应于第一电极形成多个第二电极。 形成在前基板的内表面上以覆盖第二电极的第二电介质层。 形成在第二介电层的表面上的第二荧光层。 在第二荧光层的表面上形成第二保护膜。 密封在放电空间中的预定放电气体。 因此，可以降低放电电压，并且可以防止荧光物质的劣化。 此外，视线的产生增加以提高亮度。

公开(公告)号：US06346775B1

公开(公告)日：2002-02-12

申请号：US09562891

申请日：2000-05-01

申请人： Won-tae Lee ,  Wong-bong Choi ,  In-taek Han ,  Jeong-hee Lee ,  Se-gi Yu

发明人： Won-tae Lee ,  Wong-bong Choi ,  In-taek Han ,  Jeong-hee Lee ,  Se-gi Yu

IPC分类号： H01J130

CPC分类号： B82Y10/00 ,  H01J1/32 ,  H01J11/12 ,  H01J11/40 ,  H01J43/06 ,  H01J65/04 ,  Y10S977/939 ,  Y10S977/952

摘要： A secondary electron amplification structure employing carbon nanotube and a plasma display panel and back light using the same are provided. The secondary electron amplification structure is formed by stacking a MgO film, a film of a fluoride such as MgF2, CaF2 or LiF, or a film of an oxide such as Al2O3, ZnO, CaO, SrO, SiO2 or La2O3 on a carbon nanotube (CNT), which functions to increase the secondary electron emission coefficient caused by electrons or ions.

摘要翻译： 提供了使用碳纳米管和等离子体显示面板的二次电子放大结构和使用其的背光。 二次电子放大结构通过在碳纳米管上层叠MgO膜，氟化物如MgF 2，CaF 2或LiF的膜或氧化物如Al 2 O 3，ZnO，CaO，SrO，SiO 2或La 2 O 3的膜而形成， CNT），其用于增加由电子或离子引起的二次电子发射系数。

公开(公告)号：US07609002B2

公开(公告)日：2009-10-27

申请号：US11410933

申请日：2006-04-26

申请人： Won-tae Lee

发明人： Won-tae Lee

IPC分类号： H01J7/24

CPC分类号： H05H1/54 ,  H01J27/024 ,  H01J27/143 ,  H01J37/321 ,  H01J37/32357

摘要： A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.

摘要翻译： 一种等离子体加速装置和等离子体处理系统，其有效地提高等离子体束的漂移速度，并且制造简单并且构造简单。 通道包括在通道的端部处开口的出口端口。 气体供应部分在通道中供应气体。 等离子体发生器为通道中的气体提供电离能以产生等离子体束。 等离子体加速部分包括在通道中彼此间隔开预定距离横向布置的多个格栅，用于将由等离子体发生器产生的等离子体束用电场加速到通道的出口。 等离子体加速装置和等离子体处理系统比使用由磁场和次级电流引起的电磁力的传统加速装置更有效地提高等离子体束的漂移速度。

公开(公告)号：US20070024201A1

公开(公告)日：2007-02-01

申请号：US11410933

申请日：2006-04-26

申请人： Won-tae Lee

发明人： Won-tae Lee

IPC分类号： H01J7/24

CPC分类号： H05H1/54 ,  H01J27/024 ,  H01J27/143 ,  H01J37/321 ,  H01J37/32357

摘要： A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.

摘要翻译： 一种等离子体加速装置和等离子体处理系统，其有效地提高等离子体束的漂移速度，并且制造简单并且构造简单。 通道包括在通道的端部处开口的出口端口。 气体供应部分在通道中供应气体。 等离子体发生器为通道中的气体提供电离能以产生等离子体束。 等离子体加速部分包括在通道中彼此间隔开预定距离横向布置的多个格栅，用于将由等离子体发生器产生的等离子体束用电场加速到通道的出口。 等离子体加速装置和等离子体处理系统比使用由磁场和次级电流引起的电磁力的传统加速装置更有效地提高等离子体束的漂移速度。