公开(公告)号：US5125821A

公开(公告)日：1992-06-30

申请号：US429471

申请日：1989-10-31

申请人： Junichi Saeki ,  Isamu Yoshida ,  Aizo Kaneda ,  Kazuhiro Sugino ,  Kunihiko Nishi

发明人： Junichi Saeki ,  Isamu Yoshida ,  Aizo Kaneda ,  Kazuhiro Sugino ,  Kunihiko Nishi

IPC分类号： G01N3/00 ,  G01N33/44

CPC分类号： G01N33/442 ,  G01N2203/0092

摘要： A measuring device for enabling an evaluation of a moldability of a thermosetting resin by determination of parameters suitable for high accuracy forecasting of flow and curing behaviors of the thermosetting resin within a metal mold, as well as a metal mold for molding a thermosetting resin and method for constructing runners of the metal mold which is effective to minimize if not prevent the occurrence of false in moldings. By utilizing unique or peculiar parameters of the thermosetting resin which are not influenced by a molding condition and by conducting a flow simulation with a metal mold having a flow passage of arbitrary dimensions using the determined values for the parameters, a forecasting of a flow in an actual metal mold is enabled so as to preselect optimum molding conditions and flow passage dimensions for a metal mold.

公开(公告)号：US06531760B1

公开(公告)日：2003-03-11

申请号：US09558105

申请日：2000-04-25

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L23495

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0695 ,  H01L2224/85399

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US6072231A

公开(公告)日：2000-06-06

申请号：US066877

申请日：1998-04-28

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US5914530A

公开(公告)日：1999-06-22

申请号：US52981

申请日：1998-04-01

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US5612569A

公开(公告)日：1997-03-18

申请号：US464131

申请日：1995-06-05

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31 ,  H01L23/495 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/32 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/06136 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73215 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  Y10T29/49121

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

摘要翻译： 由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。 鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。 在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小 杂散容量，提高信号传输速率和减少电气噪声。

公开(公告)号：US06720208B2

公开(公告)日：2004-04-13

申请号：US10322672

申请日：2002-12-19

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L2144

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0695 ,  H01L2224/85399

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

摘要翻译： 由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。 鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。 在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小 杂散容量，提高信号传输速率和减少电气噪声。

公开(公告)号：US06204552B1

公开(公告)日：2001-03-20

申请号：US09481398

申请日：2000-01-12

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L23495

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0695 ,  H01L2224/85399

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US6069029A

公开(公告)日：2000-05-30

申请号：US60368

申请日：1998-04-15

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H01L21/44

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

摘要翻译： 由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。 鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。 在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小 杂散容量，提高信号传输速率和减少电气噪声。

公开(公告)号：US6018191A

公开(公告)日：2000-01-25

申请号：US35104

申请日：1998-03-05

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H01L23/52

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US5793099A

公开(公告)日：1998-08-11

申请号：US646031

申请日：1996-05-07

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.