公开(公告)号：US08421054B2

公开(公告)日：2013-04-16

申请号：US13351452

申请日：2012-01-17

申请人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

发明人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC分类号： H01L29/04 ,  H01L29/26

CPC分类号： H01L33/382 ,  H01L33/16 ,  H01L33/32

摘要： A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.

摘要翻译： 发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

公开(公告)号：US20120113656A1

公开(公告)日：2012-05-10

申请号：US13351452

申请日：2012-01-17

申请人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

发明人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC分类号： F21V21/00 ,  H01L33/38

CPC分类号： H01L33/382 ,  H01L33/16 ,  H01L33/32

摘要： A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.

摘要翻译： 发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

公开(公告)号：US20120085986A1

公开(公告)日：2012-04-12

申请号：US13321923

申请日：2010-06-09

申请人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

发明人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC分类号： H01L33/04

CPC分类号： H01L33/38 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382

摘要： The light-emitting diode element of this invention includes: an n-type GaN substrate (7), of which the principal surface (7a) is an m plane; and a multilayer structure on the principal surface (7a) of the substrate (7), which includes an n-type semiconductor layer (2), an active layer (3) on a first region (2a) of the upper surface of the n-type semiconductor layer (2), a p-type semiconductor layer (4), an anode electrode layer (5), and a cathode electrode layer (6) on a second region (2b) of the upper surface of the n-type semiconductor layer (2). These layers (2, 3, 4) have all been grown epitaxially through an m-plane growth. The n-type dopant concentration in the substrate (7) and n-type semiconductor layer (2) is 1×1018 cm−3 or less. When viewed perpendicularly to the principal surface (7a), a gap of 4 μm or less is left between the anode and cathode electrode layers (5, 6) and the anode electrode layer (5) is arranged at a distance of 45 μm or less from an edge of the cathode electrode layer (6) that faces the anode electrode layer (5).

摘要翻译： 本发明的发光二极管元件包括：主面（7a）为m面的n型GaN衬底（7）; 以及在基板（7）的主表面（7a）上的多层结构，其包括n型半导体层（2），在n的上表面的第一区域（2a）上的有源层（3） 型半导体层（2），p型半导体层（4），阳极电极层（5）以及在n型上表面的第二区域（2b）上的阴极电极层 半导体层（2）。 这些层（2,3,4）全部通过m平面生长而外延生长。 基板（7）和n型半导体层（2）中的n型掺杂剂浓度为1×1018cm -3以下。 当垂直于主表面（7a）观察时，在阳极和阴极电极层（5,6）之间留下4μm或更小的间隙，并且阳极电极层（5）被布置在45μm或更小的距离处 从所述阴极电极层（6）的与所述阳极电极层（5）相对的边缘。

公开(公告)号：US08587022B2

公开(公告)日：2013-11-19

申请号：US13256061

申请日：2010-12-27

申请人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.

摘要翻译： 氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1， 设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。

公开(公告)号：US20130214288A1

公开(公告)日：2013-08-22

申请号：US13880027

申请日：2012-05-02

申请人： Toshiya Yokogawa ,  Junko Iwanaga ,  Akira Inoue

发明人： Toshiya Yokogawa ,  Junko Iwanaga ,  Akira Inoue

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

摘要： A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10−4≦D≦14.1×10−4. The area of the p-side electrode, S, is in the range of 1×102 μm2≦S≦9×104 μm2. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm2.

摘要翻译： 实施方式的氮化物系半导体发光元件具有半导体层叠结构，该半导体层叠结构具有作为m面的生长面并由GaN系半导体构成。 半导体多层结构包括n型半导体层，p型半导体层，设置在p型半导体层上的p侧电极以及介于n型半导体层和p型半导体层之间的有源层 半导体层。 有源层的厚度与n型半导体层的厚度D之比在1.8×10 -4 @ D @ 14.1×10 -4的范围内。 p侧电极S的面积在1×102mum2 @ S @ 9×104mum2的范围内。 导致外部量子效率最大值的88％的最大电流密度不小于2A / mm2。

公开(公告)号：US08823026B2

公开(公告)日：2014-09-02

申请号：US13880027

申请日：2012-05-02

申请人： Toshiya Yokogawa ,  Junko Iwanaga ,  Akira Inoue

发明人： Toshiya Yokogawa ,  Junko Iwanaga ,  Akira Inoue

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/02 ,  H01L33/16

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

摘要： A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10−4≦D≦14.1×10−4. The area of the p-side electrode, S, is in the range of 1×102 μm2≦S≦9×104 μm2. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm2.

摘要翻译： 实施方式的氮化物系半导体发光元件具有半导体层叠结构，该半导体层叠结构具有作为m面的生长面并由GaN系半导体构成。 半导体多层结构包括n型半导体层，p型半导体层，设置在p型半导体层上的p侧电极以及介于n型半导体层和p型半导体层之间的有源层 半导体层。 有源层的厚度与n型半导体层的厚度D的比值在1.8×10-4＆lt; 1lE; D＆nlE; 14.1×10-4的范围内。 p侧电极S的面积在1×102μm2＆amp; NlE; S＆NlE; 9×104μm2的范围内。 导致外部量子效率最大值的88％的最大电流密度不小于2A / mm2。

公开(公告)号：US20120001223A1

公开(公告)日：2012-01-05

申请号：US13256061

申请日：2010-12-27

申请人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L33/32

CPC分类号： H01L33/14 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.

摘要翻译： 氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1， 设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。

公开(公告)号：US08933543B2

公开(公告)日：2015-01-13

申请号：US13503972

申请日：2011-03-15

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L33/16 ,  H01L21/02 ,  H01L33/40 ,  H01L23/532 ,  H01L33/00 ,  H01L33/32 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01L21/02579 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L23/53247 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/13 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341 ,  H01L2924/00

摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面倾斜不小于1°的角度， 超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。

公开(公告)号：US08729587B2

公开(公告)日：2014-05-20

申请号：US13596849

申请日：2012-08-28

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L33/30 ,  H01L33/50

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L29/045 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/32341

摘要： An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多 超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。 电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。

公开(公告)号：US08334199B2

公开(公告)日：2012-12-18

申请号：US12937758

申请日：2010-03-17

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L21/3205

CPC分类号： H01L21/28575 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。