公开(公告)号：US11883926B2

公开(公告)日：2024-01-30

申请号：US17319637

申请日：2021-05-13

Applicant: Kioxia Corporation

Inventor： Takahiko Kawasaki ,  Yukiteru Matsui ,  Akifumi Gawase

IPC: B24B37/26 ,  B24B37/24 ,  B24B53/017 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105 ,  H01L23/532

CPC classification number: B24B37/26 ,  B24B37/24 ,  B24B53/017 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76805 ,  H01L21/76819 ,  H01L21/76895 ,  H01L23/53257

Abstract: A polishing pad is described. The polishing pad includes a surface having plural recess portions, and a substrate is polished by the surface. In the pad, an average width of the recess portions at one area of the surface in a direction parallel to the surface is 20 μm or less, and an average density of the recess portions at one area of the surface is 1,300/mm2 or more.

公开(公告)号：US11534886B2

公开(公告)日：2022-12-27

申请号：US16806558

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Mikiya Sakashita ,  Yukiteru Matsui ,  Akifumi Gawase

IPC: B24B37/20 ,  B24B37/04 ,  H01L21/306 ,  H01L21/67

Abstract: According to one embodiment, a polishing apparatus includes a holder for holding a polishing pad for polishing a surface of a substrate. A plurality of pressing members are configured to press a back surface side of the polishing pad while held by the holder. A driving unit is configured to selectively move pressing members in a direction towards the surface of the substrate so as to press the back surface side of the polishing pad.

公开(公告)号：US20210299814A1

公开(公告)日：2021-09-30

申请号：US17010729

申请日：2020-09-02

Applicant: KIOXIA CORPORATION

Inventor： Mikiya SAKASHITA ,  Yumiko Kataoka ,  Yukiteru Matsui

IPC: B24B37/015 ,  B24B37/013 ,  C09G1/02

Abstract: According to one embodiment, a polishing method includes supplying a polishing agent to be between a polishing pad and to-be-polished surface, then polishing the to-be-polished surface with the polishing agent while rotating at least one of the to-be-polished surface and the polishing pad. The polishing agent includes abrasive grains and an organic polymer. The organic polymer makes a reversible phase transition between a gel state and a sol state depending on temperature.

公开(公告)号：US12300499B2

公开(公告)日：2025-05-13

申请号：US17447343

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Mikiya Sakashita ,  Yukiteru Matsui

IPC: H01L21/306 ,  B24B1/00 ,  B24B37/015 ,  B24B37/04 ,  B24B37/10 ,  B24B41/06 ,  C09G1/02 ,  C09G1/18 ,  H01L21/321

Abstract: A polishing solution according to an embodiment includes an exothermic agent that generates heat through application of an alternating magnetic field thereto, and a viscosity modifier that undergoes a reversible phase transition between a gel state and a sol state depending on temperature.

公开(公告)号：US11986920B2

公开(公告)日：2024-05-21

申请号：US17010729

申请日：2020-09-02

Applicant: KIOXIA CORPORATION

Inventor： Mikiya Sakashita ,  Yumiko Kataoka ,  Yukiteru Matsui

IPC: B24B37/015 ,  B24B37/013 ,  C08L1/08 ,  C09G1/02

CPC classification number: B24B37/015 ,  B24B37/013 ,  C09G1/02 ,  C08L1/08

Abstract: According to one embodiment, a polishing method includes supplying a polishing agent to be between a polishing pad and to-be-polished surface, then polishing the to-be-polished surface with the polishing agent while rotating at least one of the to-be-polished surface and the polishing pad. The polishing agent includes abrasive grains and an organic polymer. The organic polymer makes a reversible phase transition between a gel state and a sol state depending on temperature.

公开(公告)号：US10985027B2

公开(公告)日：2021-04-20

申请号：US16820888

申请日：2020-03-17

Applicant: Kioxia Corporation

Inventor： Akifumi Gawase ,  Yukiteru Matsui ,  Mikiya Sakashita

IPC: H01L21/31 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/033

Abstract: A method for manufacturing a semiconductor device according to an embodiment includes: forming a first layer on a semiconductor substrate, a surface of the first layer having a first plane of which distance from the semiconductor substrate is a first distance and a second plane of which distance from the semiconductor substrate is a second distance smaller than the first distance, and a difference between the first distance and the second distance being 30 nm or more; performing planarization processing on the first layer to have the difference of less than 30 nm; forming a second layer directly on the first layer after performing the planarization processing; supplying a resist to the second layer; bringing a template having a pattern into contact with the resist to form a resist layer to which the pattern has been transferred; and etching the second layer using the resist layer as a mask.