公开(公告)号：US20140084473A1

公开(公告)日：2014-03-27

申请号：US14028523

申请日：2013-09-16

申请人： KWANGJIN MOON ,  SungHee KANG ,  TAESEONG KIM ,  Byung Lyul PARK ,  Yeun-Sang PARK ,  SUKCHUL BANG

发明人： KWANGJIN MOON ,  SungHee KANG ,  TAESEONG KIM ,  Byung Lyul PARK ,  Yeun-Sang PARK ,  SUKCHUL BANG

IPC分类号： H01L23/48 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/30625 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2224/05552

摘要： Provided are semiconductor devices and methods of fabricating the same. The device may include a substrate including a first surface and a second surface opposing each other, a through-silicon-via (TSV) electrode provided in a via hole that may be formed to penetrate the substrate, and an integrated circuit provided adjacent to the through electrode on the first surface. The through electrode includes a metal layer filling a portion of the via hole and an alloy layer filling a remaining portion of the via hole. The alloy layer contains at least two metallic elements, one of which may be the same as that contained in the metal layer, and the other of which may be different from that contained in the metal layer.

摘要翻译： 提供半导体器件及其制造方法。 该器件可以包括包括彼此相对的第一表面和第二表面的衬底，设置在可以形成为穿透衬底的通孔中的穿硅通孔（TSV）电极，以及设置在邻近 通过第一表面上的电极。 贯通电极包括填充通孔的一部分的金属层和填充通孔的剩余部分的合金层。 合金层含有至少两种金属元素，其中之一可以与金属层中的金属元素相同，另一种可能与金属层中所含金属元素不同。

公开(公告)号：US20150332967A1

公开(公告)日：2015-11-19

申请号：US14809159

申请日：2015-07-24

申请人： KWANGJIN MOON ,  SungHee KANG ,  TAESEONG KIM ,  Byung Lyul PARK ,  Yeun-Sang PARK ,  SUKCHUL BANG

发明人： KWANGJIN MOON ,  SungHee KANG ,  TAESEONG KIM ,  Byung Lyul PARK ,  Yeun-Sang PARK ,  SUKCHUL BANG

IPC分类号： H01L21/768 ,  H01L21/306

CPC分类号： H01L23/481 ,  H01L21/30625 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2224/05552

摘要： Provided are semiconductor devices and methods of fabricating the same. The device may include a substrate including a first surface and a second surface opposing each other, a through-silicon-via (TSV) electrode provided in a via hole that may be formed to penetrate the substrate, and an integrated circuit provided adjacent to the through electrode on the first surface. The through electrode includes a metal layer filling a portion of the via hole and an alloy layer filling a remaining portion of the via hole. The alloy layer contains at least two metallic elements, one of which may be the same as that contained in the metal layer, and the other of which may be different from that contained in the metal layer.

摘要翻译： 提供半导体器件及其制造方法。 该器件可以包括包括彼此相对的第一表面和第二表面的衬底，设置在可以形成为穿透衬底的通孔中的穿硅通孔（TSV）电极，以及设置在邻近 通过第一表面上的电极。 贯通电极包括填充通孔的一部分的金属层和填充通孔的剩余部分的合金层。 合金层含有至少两种金属元素，其中之一可以与金属层中的金属元素相同，另一种可能与金属层中所含金属元素不同。

公开(公告)号：US20150137326A1

公开(公告)日：2015-05-21

申请号：US14463645

申请日：2014-08-19

申请人： Pil-Kyu KANG ,  Byung Lyul PARK ,  SungHee KANG ,  TAESEONG KIM ,  TAEYEONG KIM ,  KWANGJIN MOON ,  Jae-Hwa PARK ,  SUKCHUL BANG ,  Seongmin SON ,  JIN HO AN ,  Ho-Jin LEE ,  JEONGGI JIN

发明人： Pil-Kyu KANG ,  Byung Lyul PARK ,  SungHee KANG ,  TAESEONG KIM ,  TAEYEONG KIM ,  KWANGJIN MOON ,  Jae-Hwa PARK ,  SUKCHUL BANG ,  Seongmin SON ,  JIN HO AN ,  Ho-Jin LEE ,  JEONGGI JIN

IPC分类号： H01L23/48 ,  H01L21/311 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer.

摘要翻译： 半导体器件包括具有彼此相对的顶表面和底表面的半导体衬底，设置在半导体衬底的顶表面上并且包括集成电路的层间介质层，设置在层间介电层上的金属间介电层 并且包括电连接到集成电路的至少一个金属互连，设置在金属间电介质层上的上部电介质层，贯穿金属间介电层的贯通电极，层间绝缘层和半导体基板， 所述通孔电介质层包围所述贯通电极，并且使所述通孔与所述半导体基板电绝缘。 通孔电介质层包括上电介质层和层间电介质层之间的一个或多个气隙。