公开(公告)号：US20120214303A1

公开(公告)日：2012-08-23

申请号：US13456904

申请日：2012-04-26

申请人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/3205

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

摘要翻译： 本发明的实施方案通常提供形成硅化钴的方法。 在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体 预清洁过程。 该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层 在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US20110086509A1

公开(公告)日：2011-04-14

申请号：US12969445

申请日：2010-12-15

申请人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/285

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

摘要翻译： 本发明的实施方案通常提供形成硅化钴的方法。 在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体 预清洁过程。 该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层 在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US20090004850A1

公开(公告)日：2009-01-01

申请号：US12111923

申请日：2008-04-29

申请人： SESHADRI GANGULI ,  SANG-HO YU ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： SESHADRI GANGULI ,  SANG-HO YU ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/44

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.

摘要翻译： 本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。 在一个实施例中，提供了一种用于在基板上形成含金属硅化物的材料的方法，其包括在气相沉积工艺期间在含硅表面上形成金属硅化物材料，通过在其上顺序地沉积多个金属硅化物层和甲硅烷基层 衬底，在所述金属硅化物材料上沉积金属覆盖层，在退火过程期间加热所述衬底，以及在所述阻挡材料上沉积金属接触材料。 在一个实例中，金属硅化物层和金属覆盖层都含有钴。 钴硅化物材料可以含有约1.9或更大，例如大于约2.0，或约2.2或更大的硅/钴原子比。

公开(公告)号：US20070202254A1

公开(公告)日：2007-08-30

申请号：US11733929

申请日：2007-04-11

申请人： SESHADRI GANGULI ,  SCHUBERT CHU ,  MEI CHANG ,  SANG-HO YU ,  KEVIN MORAES ,  SEE-ENG PHAN

发明人： SESHADRI GANGULI ,  SCHUBERT CHU ,  MEI CHANG ,  SANG-HO YU ,  KEVIN MORAES ,  SEE-ENG PHAN

IPC分类号： C23C16/00

CPC分类号： C23C16/42 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

公开(公告)号：US20130146468A1

公开(公告)日：2013-06-13

申请号：US13314926

申请日：2011-12-08

申请人： HOON KIM ,  SANG HYEOB LEE ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HO YU

发明人： HOON KIM ,  SANG HYEOB LEE ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HO YU

IPC分类号： C23C28/02 ,  C23C16/56 ,  B05D5/12 ,  C23C16/44

CPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/56 ,  C23C28/02 ,  C23C28/023

摘要： Methods for depositing ruthenium-containing films are disclosed herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing layer to a hydrogen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the hydrogen-containing gas exposed ruthenium-containing film may be subsequently exposed to an oxygen-containing gas to at least one of remove at least some carbon from or add oxygen to the ruthenium-containing film. In some embodiments, the deposition and exposure to the hydrogen-containing gas and optionally, the oxygen-containing gas may be repeated to deposit the ruthenium-containing film to a desired thickness.

摘要翻译： 本文公开了沉积含钌膜的方法。 在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上， 并将沉积的含钌层暴露于含氢气体中以从沉积的含钌膜中除去至少一些碳。 在一些实施方案中，暴露含钌的含氟膜的膜随后可以暴露于含氧气体中至少一种，以将至少一些碳从氧钌中除去或添加至含钌膜。 在一些实施方案中，可以重复沉积和暴露于含氢气体和任选地含氧气体，以将含钌膜沉积到所需厚度。

公开(公告)号：US20120012465A1

公开(公告)日：2012-01-19

申请号：US13167001

申请日：2011-06-23

申请人： HOON KIM ,  WEI TI LEE ,  SANG HO YU ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HYEOB LEE

发明人： HOON KIM ,  WEI TI LEE ,  SANG HO YU ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HYEOB LEE

IPC分类号： C25D5/02

CPC分类号： C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76898

摘要： Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).

摘要翻译： 本文提供了用于形成用于互连结构的势垒/种子层的方法。 在一些实施方案中，一种处理基材的方法，所述基材具有形成在基材的第一表面中的开口，所述开口具有侧壁和底部表面，所述方法可以包括形成包含锰（Mn）和至少一种钌的层 （Ru）或钴（Co）在开口的侧壁和底表面上; 以及在所述层上沉积导电材料以填充所述开口。 在一些实施例中，钌（Ru）或钴（Co）之一沉积在开口的侧壁和底表面上。 材料可以通过化学气相沉积（CVD）或物理气相沉积（PVD）沉积。

公开(公告)号：US20110298062A1

公开(公告)日：2011-12-08

申请号：US13116794

申请日：2011-05-26

申请人： SESHADRI GANGULI ,  SANG Ho YU ,  SANG-HYEOB LEE ,  HYOUNG-CHAN HA ,  WEI TI LEE ,  HOON KIM ,  SRINIVAS GANDIKOTA ,  YU LEI ,  KEVIN MORAES ,  XIANMIN TANG

发明人： SESHADRI GANGULI ,  SANG Ho YU ,  SANG-HYEOB LEE ,  HYOUNG-CHAN HA ,  WEI TI LEE ,  HOON KIM ,  SRINIVAS GANDIKOTA ,  YU LEI ,  KEVIN MORAES ,  XIANMIN TANG

IPC分类号： H01L21/28 ,  H01L29/78 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L21/28079 ,  H01L21/28088 ,  H01L21/32051 ,  H01L29/49

摘要： Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.

摘要翻译： 本文提供了金属门结构及其形成方法。 在一些实施例中，在具有形成在高k电介质层中的特征的衬底上形成金属栅极结构的方法可以包括在电介质层顶部的特征内沉积第一层; 在所述特征内在所述第一层顶部沉积包含钴或镍的第二层; 以及在第二层顶部沉积包括特征内的金属的第三层以填充该特征，其中第一层或第二层中的至少一层形成润湿层以形成后续沉积层的成核层，其中第一层 第二层或第三层形成功函数层，并且其中第三层形成栅电极。

公开(公告)号：US20110312148A1

公开(公告)日：2011-12-22

申请号：US13155520

申请日：2011-06-08

申请人： HOON KIM ,  SANG-HYEOB LEE ,  SANG HO YU ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA

发明人： HOON KIM ,  SANG-HYEOB LEE ,  SANG HO YU ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA

IPC分类号： H01L21/02 ,  B82Y40/00

CPC分类号： H01L28/65 ,  B82Y40/00 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L28/91

摘要： Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.

摘要翻译： 本文提供了沉积含钌膜的方法。 在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上， 并将沉积的含钌膜暴露于含氧气体中以从沉积的含钌膜中除去至少一些碳。 在一些实施方案中，含氧气体暴露的含钌膜可以在含氢气体中退火以从含钌膜中除去至少一些氧。 在一些实施例中，可以重复沉积，曝光和退火，以将含钌膜沉积到期望的厚度。

公开(公告)号：US20120141667A1

公开(公告)日：2012-06-07

申请号：US13315906

申请日：2011-12-09

申请人： HOON KIM ,  SANG HO YU ,  SESHADRI GANGULI

发明人： HOON KIM ,  SANG HO YU ,  SESHADRI GANGULI

IPC分类号： C23C16/06 ,  C25D5/02

CPC分类号： C25D5/02 ,  C23C14/046 ,  C23C14/185 ,  C23C16/045 ,  C23C16/06 ,  H01L21/76843 ,  H01L21/76873

摘要： Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and the bottom surface of the opening, the layer having a first surface adjacent to the sidewall and bottom surface of the opening and a second surface opposite the first surface, wherein the second surface comprises predominantly at least one of ruthenium (Ru) or cobalt (Co) and wherein a predominant quantity of manganese (Mn) in the layer is not disposed proximate the second surface; and depositing a conductive material on the layer to fill the opening.

摘要翻译： 本文提供了用于形成用于互连结构的势垒/种子层的方法。 在一些实施方案中，一种处理基材的方法，所述基材具有形成在基材的第一表面中的开口，所述开口具有侧壁和底部表面，所述方法可以包括形成包含锰（Mn）和至少一种钌的层 （Ru）或钴（Co）在所述开口的侧壁和底表面上，所述层具有与所述开口的侧壁和底表面相邻的第一表面和与所述第一表面相对的第二表面，其中所述第二表面主要包括 钌（Ru）或钴（Co）中的至少一种，并且其中该层中主要量的锰（Mn）不靠近第二表面设置; 以及在所述层上沉积导电材料以填充所述开口。

公开(公告)号：US20070054487A1

公开(公告)日：2007-03-08

申请号：US11470466

申请日：2006-09-06

申请人： PAUL MA ,  KAVITA SHAH ,  DIEN-YEH WU ,  SESHADRI GANGULI ,  CHRISTOPHE MARCADAL ,  FREDERICK WU ,  SCHUBERT CHU

发明人： PAUL MA ,  KAVITA SHAH ,  DIEN-YEH WU ,  SESHADRI GANGULI ,  CHRISTOPHE MARCADAL ,  FREDERICK WU ,  SCHUBERT CHU

IPC分类号： H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846

摘要： Embodiments of the invention provide a method for depositing ruthenium materials on a substrate by various vapor deposition processes, such as atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD). In one aspect, the process has little or no initiation delay and maintains a fast deposition rate while forming a ruthenium material. The ruthenium material may be deposited with good step coverage, strong adhesion, and contains a low carbon concentration for high electrical conductivity. The method for depositing the ruthenium material on a substrate generally includes sequentially exposing the substrate to a pyrrolyl ruthenium precursor and a reagent during the ALD process. The pyrrolyl ruthenium precursor contains ruthenium and at least one pyrrolyl ligand. In some examples, the reagent may contain a plasma of ammonia, nitrogen, or hydrogen during a PE-ALD process. In other examples, a reducing gas may be used during a thermal ALD process.