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公开(公告)号：US20050249253A1
公开(公告)日：2005-11-10
申请号：US11030791
申请日：2005-01-07
CPC分类号： H01S5/227 , H01L33/007 , H01S5/0213 , H01S5/2215 , H01S5/2224 , H01S5/2275 , H01S5/32341 , H01S2301/173
摘要： A semiconductor light-emitting device and a method of manufacture thereof A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminium-containing cladding region or an aluminium-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5). The or each exposed portion of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5) Is then oxidised to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).
摘要翻译： 一种半导体发光器件及其制造方法。一种制造半导体发光器件的方法包括：选择性地蚀刻在氮化物材料体系中制造的半导体层结构（16），并且包括含铝包层区域或铝 - （5）。 蚀刻步骤形成台面（17），并且还暴露含铝包层区域或含铝光导区域（5）的一个或多个部分。 然后，含铝包覆区域或含铝光导区域（5）的暴露部分或含铝的光导引区域（5）被氧化以形成横向邻近并从台面横向延伸的电流阻挡层（18）。 当沉积导电接触层（11）时，电流阻挡层（18）将防止接触层（11）与缓冲层（3）直接接触。
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公开(公告)号：US20050163179A1
公开(公告)日：2005-07-28
申请号：US10974207
申请日：2004-10-27
IPC分类号： H01S5/343 , H01L21/203 , H01S5/30 , H01S5/323 , H01S5/00
CPC分类号： H01S5/32341 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02631 , H01S2304/02
摘要： A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy.
摘要翻译： （Al，Ga，In）N材料系统中制造连续波半导体激光二极管的方法包括：依次生长第一包层区域（4），第一光导区域（5），有源区域 6），第二光导区域（7）和第二包层区域（8）。 第一包层区域（4），第一导光区域（5），有源区域（6），第二光导区域（7）和第二包层区域（8）中的每一个通过分子束外延沉积。
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公开(公告)号：US20050227404A1
公开(公告)日：2005-10-13
申请号：US11082586
申请日：2005-03-17
IPC分类号： H01L21/461 , H01L33/36
CPC分类号： H01L33/36 , H01L2933/0016
摘要： A method of manufacturing a semiconductor light-emitting device is provided. The method includes the step of depositing an electrically conductive material on one or more selected portions of the surface of a semiconductor wafer including a substrate and a layer structure, the layer structure having at least a first semiconductor layer of a first conductivity type and a second semiconductor conductivity layer of a second conductivity type different from the first conductivity type, the first layer being between the second layer and the substrate, such that the electrically conductive material forms a contact to the first semiconductor layer. The method further includes the step of dicing the wafer to form a plurality of light-emitting devices, each light-emitting device having a respective part of the electrically conductive material.
摘要翻译： 提供一种制造半导体发光器件的方法。 该方法包括在包括衬底和层结构的半导体晶片的表面的一个或多个选定部分上沉积导电材料的步骤，该层结构具有至少第一导电类型的第一半导体层和第二导电类型的第二半导体层 不同于第一导电类型的第二导电类型的半导体导电层，第一层在第二层和衬底之间，使得导电材料与第一半导体层形成接触。 该方法还包括切割晶片以形成多个发光器件的步骤，每个发光器件具有导电材料的相应部分。
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公开(公告)号：US07569862B2
公开(公告)日：2009-08-04
申请号：US11030791
申请日：2005-01-07
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , H01L33/007 , H01S5/0213 , H01S5/2215 , H01S5/2224 , H01S5/2275 , H01S5/32341 , H01S2301/173
摘要： A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminum-containing cladding region or an aluminum-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5). The or each exposed portion of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5) is then oxidized to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).
摘要翻译： 一种制造半导体发光器件的方法包括选择性地蚀刻在氮化物材料体系中制造并包括含铝包层区域或含铝光导区域（5）的半导体层结构（16）。 蚀刻步骤形成台面（17），并且还暴露含铝包层区域或含铝光导区域（5）的一个或多个部分。 然后将含铝包覆区域或含铝光导区域（5）的暴露部分或每个暴露部分氧化，以形成横向邻近并从台面横向延伸的电流阻挡层（18）。 当沉积导电接触层（11）时，电流阻挡层（18）将防止接触层（11）与缓冲层（3）直接接触。
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公开(公告)号：US20080014667A1
公开(公告)日：2008-01-17
申请号：US11774662
申请日：2007-07-09
申请人： Stewart HOOPER , Matthias Kauer , Jonathan Heffernan , Joanna Alderman , Jennifer Barnes , Valerie Bousquet , Takeshi Kamikawa , Yoshiyuki Takahira
发明人： Stewart HOOPER , Matthias Kauer , Jonathan Heffernan , Joanna Alderman , Jennifer Barnes , Valerie Bousquet , Takeshi Kamikawa , Yoshiyuki Takahira
IPC分类号： H01L33/00
CPC分类号： H01S5/028 , H01L33/007 , H01S5/005 , H01S5/0202 , H01S5/0282 , H01S2304/02 , H01S2304/12
摘要： A method of modifying the optical properties of a processed nitride semiconductor light-emitting device initially comprises disposing the processed nitride semiconductor light-emitting device in a vacuum chamber. One or more nitride semiconductor layers are then grown by molecular beam epitaxy thereby to modify the optical properties of the processed light-emitting device. Activated nitrogen, for example from a plasma source, is supplied to the vacuum chamber during growth of the nitride semiconductor layer(s). The use of activated nitrogen reduces the growth temperature required for the growth of the nitride semiconductor layer(s), as the need for thermal activation of a nitrogen species is eliminated. Moreover, use of a growth method such as, for example, plasma-assisted MBE to grow the nitride semiconductor layer(s) allows much more precise control of their thickness and composition.
摘要翻译： 改进加工的氮化物半导体发光器件的光学特性的方法最初包括将经处理的氮化物半导体发光器件设置在真空室中。 然后通过分子束外延生长一个或多个氮化物半导体层，从而改变经处理的发光器件的光学性质。 在氮化物半导体层的生长期间，例如来自等离子体源的活性氮被供应到真空室。 活性氮的使用降低了氮化物半导体层生长所需的生长温度，因为氮物质的热活化被消除。 此外，使用诸如例如等离子体辅助MBE的生长方法来生长氮化物半导体层可以更精确地控制它们的厚度和组成。
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公开(公告)号：US07867799B2
公开(公告)日：2011-01-11
申请号：US10974207
申请日：2004-10-27
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02631 , H01S2304/02
摘要： A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy.
摘要翻译： （Al，Ga，In）N材料系统中制造连续波半导体激光二极管的方法包括：依次生长第一包层区域（4），第一光导区域（5），有源区域 6），第二光导区域（7）和第二包层区域（8）。 第一包层区域（4），第一导光区域（5），有源区域（6），第二光导区域（7）和第二包层区域（8）中的每一个通过分子束外延沉积。
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公开(公告)号：US20100265976A1
公开(公告)日：2010-10-21
申请号：US12741217
申请日：2008-10-21
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02631 , H01S5/221 , H01S5/2216 , H01S5/2231 , H01S5/32341
摘要： A III-nitride compound device which has a layer of AlInN (7) having a non-zero In content, for example acting as a current blocking layer, is described. The layer of AlInN (7) has at least aperture defined therein. The layer of AlInN (7) is grown with a small lattice-mismatch with an underlying layer, for example an underlying GaN layer, thus preventing added crystal strain in the device. By using optimised growth conditions the resistivity of the AlInN is made higher than 102 ohm·cm thus preventing current flow when used as a current blocking layer in a multilayer semiconductor device with layers having smaller resistivity. As a consequence, when the AlInN layer has an opening and is placed in a laser diode device, the resistance of the device is lower resulting in a device with better performance.
摘要翻译： 描述了具有例如用作电流阻挡层的非零In含量的AlInN（7）层的III族氮化物复合器件。 AlInN（7）的层至少具有限定在其中的孔。 AlInN（7）的层与下层（例如下面的GaN层）以较小的晶格失配生长，从而防止在器件中增加晶体应变。 通过使用优化的生长条件，使AlInN的电阻率高于102欧姆·厘米，从而防止在具有较小电阻率层的多层半导体器件中用作电流阻挡层时的电流流动。 结果，当AlInN层具有开口并且放置在激光二极管器件中时，器件的电阻较低，导致具有更好性能的器件。
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公开(公告)号：US08975618B2
公开(公告)日：2015-03-10
申请号：US13075366
申请日：2011-03-30
IPC分类号： H01L31/072 , H01L31/055 , B82Y20/00 , H01L31/0352 , H01L31/052
CPC分类号： H01L31/055 , B82Y20/00 , H01L31/0304 , H01L31/03046 , H01L31/035236 , H01L31/0543 , Y02E10/52 , Y02E10/544
摘要： A resonant tunneling device includes a first semiconductor material with an energy difference between valence and conduction bands of Eg1, and a second semiconductor material with an energy difference between valence and conduction bands of Eg2, wherein Eg1 and Eg2 are different from one another. The device further includes an energy selectively transmissive interface connecting the first and second semiconductor materials.
摘要翻译： 谐振隧穿装置包括具有Eg1的价带和导带之间的能量差的第一半导体材料和具有Eg2的价带和导带之间的能量差的第二半导体材料，其中Eg1和Eg2彼此不同。 该装置还包括连接第一和第二半导体材料的能量选择性透射界面。
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公开(公告)号：US20120248413A1
公开(公告)日：2012-10-04
申请号：US13075366
申请日：2011-03-30
IPC分类号： H01L31/072
CPC分类号： H01L31/055 , B82Y20/00 , H01L31/0304 , H01L31/03046 , H01L31/035236 , H01L31/0543 , Y02E10/52 , Y02E10/544
摘要： A resonant tunneling device includes a first semiconductor material with an energy difference between valence and conduction bands of Eg1, and a second semiconductor material with an energy difference between valence and conduction bands of Eg2, wherein Eg1 and Eg2 are different from one another. The device further includes an energy selectively transmissive interface connecting the first and second semiconductor materials.
摘要翻译： 谐振隧穿装置包括具有Eg1的价带和导带之间的能量差的第一半导体材料和具有Eg2的价带和导带之间的能量差的第二半导体材料，其中Eg1和Eg2彼此不同。 该装置还包括连接第一和第二半导体材料的能量选择性透射界面。
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公开(公告)号：US07504322B2
公开(公告)日：2009-03-17
申请号：US11558972
申请日：2006-11-13
申请人： Matthias Kauer
发明人： Matthias Kauer
IPC分类号： H01L21/84
CPC分类号： H01L33/0095 , H01L21/02389 , H01L21/0254 , H01L21/02579 , H01L21/02631 , H01L21/02664 , H01L33/105 , H01L33/145 , H01L33/305 , H01L33/465 , H01S5/18308 , H01S5/18341 , H01S5/2226 , H01S5/32341
摘要： A method of growing a semiconductor layer structure comprises growing a first semiconductor layer and incorporating hydrogen into the first semiconductor layer. One or more further semiconductor layers are then grown over the first semiconductor layer to form a semiconductor layer structure. A selected portion of the first semiconductor layer is then annealed so as to change the electrical resistance of the selected portion of the first semiconductor layer. The electrical resistance of the one or more further semiconductor layers that have been grown over the first semiconductor layer is not significantly changed by the annealing step. The invention may be used, for example, to create a current aperture in a semiconductor layer within a semiconductor layer structure.
摘要翻译： 生长半导体层结构的方法包括生长第一半导体层并将氢掺入第一半导体层。 然后在第一半导体层上生长一个或多个其它半导体层以形成半导体层结构。 然后对第一半导体层的选定部分进行退火，以改变第一半导体层的选定部分的电阻。 通过退火步骤，已经在第一半导体层上生长的一个或多个其它半导体层的电阻没有显着变化。 本发明可以用于例如在半导体层结构内的半导体层中形成电流孔。
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