公开(公告)号：US20080201244A1

公开(公告)日：2008-08-21

申请号：US11706505

申请日：2007-02-15

Applicant: Katherine Johnson

Inventor： Katherine Johnson

IPC: G06Q10/00

CPC classification number: G06Q10/08 ,  G06Q10/087

Abstract: An Internet-facilitated storage, shipping, cleaning and maintenance service and method thereof, wherein the repeated, time-consuming management and organization of personal belongings, the burdensome process of packing, and the increasingly complicated chore of carrying and/or checking luggage may be essentially eliminated.

Abstract translation: 一种互联网便利的存储，运输，清洁和维护服务及其方法，其中重复，耗时的个人财物的管理和组织，繁重的包装过程以及日益复杂的携带和/或检查行李的烦恼可以是 基本消除。

公开(公告)号：US20060237740A1

公开(公告)日：2006-10-26

申请号：US10525406

申请日：2003-08-18

Applicant: Valerie Bousquet ,  Stewart Hooper ,  Jennifer Barnes ,  Katherine Johnson ,  Jonathan Heffernan

Inventor： Valerie Bousquet ,  Stewart Hooper ,  Jennifer Barnes ,  Katherine Johnson ,  Jonathan Heffernan

IPC: H01L29/20 ,  H01L21/20

CPC classification number: C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631

Abstract: A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminium to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminium mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10−4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10−8 mbar and aluminium is supplied at a beam equivalent pressure of at least 1 10−8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminium enables a second (Al,Ga)N layer, having a different aluminium mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.

Abstract translation: 通过分子束外延生长AlGaN半导体层结构的方法包括向生长室供应氨，镓和铝，从而通过MBE在设置在生长室中的衬底上生长第一（Al，Ga）N层。 第一（Al，Ga）N层具有非零的铝摩尔分数。 以至少1×10 -4巴的光束当量压力供应氨，镓以至少1×10 -8巴的光束当量压力供应，铝是 在生长步骤期间以至少1×10 -8 mbar的束当量压力供应。 一旦生长了第一（Al，Ga）N层，则改变镓和/或铝的供应速率使得能够形成具有与第一（Al，Ga）N不同的铝摩尔分数的第二（Al，Ga）N层 层由MBE在第一（Al，Ga）N层上生长。 可以重复该过程以生长（Al，Ga）N多层结构。

公开(公告)号：US20050163179A1

公开(公告)日：2005-07-28

申请号：US10974207

申请日：2004-10-27

Applicant: Stewart Hooper ,  Valerie Bousquet ,  Katherine Johnson ,  Matthias Kauer ,  Jonathan Heffernan

Inventor： Stewart Hooper ,  Valerie Bousquet ,  Katherine Johnson ,  Matthias Kauer ,  Jonathan Heffernan

IPC: H01S5/343 ,  H01L21/203 ,  H01S5/30 ,  H01S5/323 ,  H01S5/00

CPC classification number: H01S5/32341 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02631 ,  H01S2304/02

Abstract: A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy.

Abstract translation: （Al，Ga，In）N材料系统中制造连续波半导体激光二极管的方法包括：依次生长第一包层区域（4），第一光导区域（5），有源区域 6），第二光导区域（7）和第二包层区域（8）。 第一包层区域（4），第一导光区域（5），有源区域（6），第二光导区域（7）和第二包层区域（8）中的每一个通过分子束外延沉积。

公开(公告)号：US08500667B2

公开(公告)日：2013-08-06

申请号：US12241258

申请日：2008-09-30

Applicant: Katherine Johnson

Inventor： Katherine Johnson

IPC: A61F5/00

CPC classification number: A61F13/069

Abstract: A device for treatment of limbs affected with Lymphedema. The device is a crevice collar which fits into depressed areas and crevices created by over-hanging lobules and protrusions of tissue so that the tissue may be comfortably wrapped with a pressure wrap with exacerbating sores and crevice areas in the skin caused by the Lymphedema.

Abstract translation: 用于治疗受淋巴水肿影响的四肢的装置。 该装置是缝合衣领，其适合于由悬垂的小叶和组织的突起产生的凹陷区域和缝隙，使得组织可以舒适地用压力包裹包裹，由淋巴水肿引起的皮肤中的加重疮和裂缝区域。

公开(公告)号：US20050249253A1

公开(公告)日：2005-11-10

申请号：US11030791

申请日：2005-01-07

Applicant: Katherine Johnson ,  Stewart Hooper ,  Valerie Bousquet ,  Matthias Kauer ,  Jonathan Heffernan

Inventor： Katherine Johnson ,  Stewart Hooper ,  Valerie Bousquet ,  Matthias Kauer ,  Jonathan Heffernan

IPC: H01S5/042 ,  H01L21/00 ,  H01L33/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323

CPC classification number: H01S5/227 ,  H01L33/007 ,  H01S5/0213 ,  H01S5/2215 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/32341 ,  H01S2301/173

Abstract: A semiconductor light-emitting device and a method of manufacture thereof A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminium-containing cladding region or an aluminium-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5). The or each exposed portion of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5) Is then oxidised to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).

Abstract translation: 一种半导体发光器件及其制造方法。一种制造半导体发光器件的方法包括：选择性地蚀刻在氮化物材料体系中制造的半导体层结构（16），并且包括含铝包层区域或铝 - （5）。 蚀刻步骤形成台面（17），并且还暴露含铝包层区域或含铝光导区域（5）的一个或多个部分。 然后，含铝包覆区域或含铝光导区域（5）的暴露部分或含铝的光导引区域（5）被氧化以形成横向邻近并从台面横向延伸的电流阻挡层（18）。 当沉积导电接触层（11）时，电流阻挡层（18）将防止接触层（11）与缓冲层（3）直接接触。

公开(公告)号：US20050170537A1

公开(公告)日：2005-08-04

申请号：US10974226

申请日：2004-10-27

Applicant: Stewart Hooper ,  Valerie Bousquet ,  Katherine Johnson ,  Jonathan Heffernan

Inventor： Stewart Hooper ,  Valerie Bousquet ,  Katherine Johnson ,  Jonathan Heffernan

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/06 ,  H01S5/02 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01L33/007 ,  H01L33/06 ,  H01S5/0213 ,  H01S5/34333 ,  H01S2304/00 ,  H01S2304/02

Abstract: A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers (11,13,15,17) with each pair of barrier layers being separated by a quantum well layer (12,14,16), comprises annealing each barrier layer (11,13,15,17) separately. Each barrier layer (11,13,15,17) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.

Abstract translation: 一种制造半导体发光器件的有源区的方法，其中有源区包括多个势垒层（11,13,15,17），其中每对势垒层被量子阱层（12 ，14,16）包括分别对每个阻挡层（11,13,15,17）进行退火。 一旦其已经生长，并且在层在阻挡层上生长之后，每个阻挡层（11,13,15,17）被退火。 通过本发明的方法生长的器件具有比通过具有单一退火步骤的常规制造工艺制造的器件显着更高的光功率输出。

公开(公告)号：US06778714B1

公开(公告)日：2004-08-17

申请号：US09523353

申请日：2000-03-10

Applicant: Yair Kipman ,  David Wolin ,  Katherine Johnson

Inventor： Yair Kipman ,  David Wolin ,  Katherine Johnson

IPC: G06K920

CPC classification number: H04N1/02815 ,  G01N21/276 ,  G01N21/94 ,  G01N2021/8663 ,  H04N1/0282 ,  H04N1/0287 ,  H04N1/107 ,  H04N1/193

Abstract: A portable image analysis system including a hand held head assembly with an imaging window in the bottom of a housing, at least one light source in the housing directed at the imaging window, and an imaging device in the housing optically coupled to the imaging window. A computer, coupled to the hand held head assembly includes an imaging quality analysis program and a monitor for displaying images in the imaging window of the housing captured by the imaging device of the hand held head assembly for performing in situ image quality measurements.

Abstract translation: 一种便携式图像分析系统，包括在壳体底部具有成像窗口的手持式头部组件，指向成像窗口的壳体中的至少一个光源以及光学耦合到成像窗口的壳体中的成像装置。 耦合到手持式头组件的计算机包括成像质量分析程序和用于在手持式头组件的成像装置捕获的壳体的成像窗口中显示图像的监视器，用于执行原位图像质量测量。

公开(公告)号：US20100081980A1

公开(公告)日：2010-04-01

申请号：US12241258

申请日：2008-09-30

Applicant: KATHERINE JOHNSON

Inventor： KATHERINE JOHNSON

IPC: A61F5/00 ,  A61B19/00

CPC classification number: A61F13/069

Abstract: A device for treatment of limbs affected with Lymphedema. The device is a crevice collar which fits into depressed areas and crevices created by over-hanging lobules and protrusions of tissue so that the tissue may be comfortably wrapped with a pressure wrap with exacerbating sores and crevice areas in the skin caused by the Lymphedema.

Abstract translation: 用于治疗受淋巴水肿影响的四肢的装置。 该装置是缝合衣领，其适合于由悬挂的小叶和组织的突起产生的凹陷区域和缝隙，使得组织可以舒适地用压力包裹包裹，由淋巴水肿引起的皮肤中的加重疮和裂缝区域。

公开(公告)号：US20060121637A1

公开(公告)日：2006-06-08

申请号：US10536706

申请日：2003-11-27

Applicant: Stewart Hooper ,  Katherine Johnson ,  Valerie Bousquet ,  Jonathan Heffernan

Inventor： Stewart Hooper ,  Katherine Johnson ,  Valerie Bousquet ,  Jonathan Heffernan

IPC: H01L21/00

CPC classification number: C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262

Abstract: A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ammonia and Cp2Mg are supplied to an MBE growth chamber; to grow p-type AlGaN, aluminium is additionally supplied to the growth chamber. The growth process of the invention produces a p-type carrier concentration, as measured by room temperature Hall effect measurements, of up to 2 1017 cm-3, without the need for any post-growth step of activating the dopant atoms.

Abstract translation: 通过分子束外延（MBE）生长p型氮化物半导体材料的方法使用双（环戊二烯基）镁（Cp2Mg）作为镁掺杂剂原子的来源。 使用氨气作为MBE生长过程的氮前体。 为了生长p型GaN，例如，通过本发明的方法，将镓，氨和Cp2Mg供给至MBE生长室; 为了生长p型AlGaN，另外向生长室供给铝。 本发明的生长方法通过室温霍尔效应测量产生高达2×1017cm-3的p型载流子浓度，而不需要任何激活掺杂剂原子的后期生长步骤。

公开(公告)号：US20050227404A1

公开(公告)日：2005-10-13

申请号：US11082586

申请日：2005-03-17

Applicant: Katherine Johnson ,  Stewart Hooper ,  Valerie Bousquet ,  Matthias Kauer ,  Jonathan Heffernan

Inventor： Katherine Johnson ,  Stewart Hooper ,  Valerie Bousquet ,  Matthias Kauer ,  Jonathan Heffernan

IPC: H01L21/461 ,  H01L33/36

CPC classification number: H01L33/36 ,  H01L2933/0016

Abstract: A method of manufacturing a semiconductor light-emitting device is provided. The method includes the step of depositing an electrically conductive material on one or more selected portions of the surface of a semiconductor wafer including a substrate and a layer structure, the layer structure having at least a first semiconductor layer of a first conductivity type and a second semiconductor conductivity layer of a second conductivity type different from the first conductivity type, the first layer being between the second layer and the substrate, such that the electrically conductive material forms a contact to the first semiconductor layer. The method further includes the step of dicing the wafer to form a plurality of light-emitting devices, each light-emitting device having a respective part of the electrically conductive material.

Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括在包括衬底和层结构的半导体晶片的表面的一个或多个选定部分上沉积导电材料的步骤，该层结构具有至少第一导电类型的第一半导体层和第二导电类型的第二半导体层 不同于第一导电类型的第二导电类型的半导体导电层，第一层在第二层和衬底之间，使得导电材料与第一半导体层形成接触。 该方法还包括切割晶片以形成多个发光器件的步骤，每个发光器件具有导电材料的相应部分。