公开(公告)号：US5119155A

公开(公告)日：1992-06-02

申请号：US619616

申请日：1990-11-29

申请人： Katsuhiko Hieda ,  Tohru Ozaki

发明人： Katsuhiko Hieda ,  Tohru Ozaki

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10829

摘要： In a semiconductor memory device, a trench is formed in a surface of a memory cell forming region of the substrate. The overall surface of the memory cell forming region, inclusive of the inner wall of the trench, is covered with an insulator film. A capacitor is formed on the inner surface of the trench through the insulator film. A MOSFET is formed in a semiconductor layer formed on a surface of a flat portion of the substrate. One of the source and drain regions of the MOSFET reaches the periphery of the trench so as to be connected to a storage node electrode of the capacitor.

摘要翻译： 在半导体存储器件中，在衬底的存储单元形成区域的表面上形成沟槽。 存储单元形成区域的整个表面（包括沟槽的内壁）被绝缘膜覆盖。 通过绝缘膜在沟槽的内表面上形成电容器。 MOSFET形成在形成在基板的平坦部分的表面上的半导体层中。 MOSFET的源极和漏极区域之一到达沟槽的周边，以便连接到电容器的存储节点电极。

公开(公告)号：US5747844A

公开(公告)日：1998-05-05

申请号：US736279

申请日：1996-10-24

申请人： Masami Aoki ,  Takashi Yamada ,  Hiroshi Takato ,  Tohru Ozaki ,  Katsuhiko Hieda ,  Akihiro Nitayama

发明人： Masami Aoki ,  Takashi Yamada ,  Hiroshi Takato ,  Tohru Ozaki ,  Katsuhiko Hieda ,  Akihiro Nitayama

IPC分类号： H01L21/822 ,  G11C11/401 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10817 ,  H01L27/0207 ,  H01L27/10852 ,  H01L27/10882 ,  Y10S257/907

摘要： A plurality of bit line contacts provided on one bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL and a plurality of bit line contacts provided on an adjacent bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL which is different from the space in which a corresponding one of the bit line contacts formed on the former bit line is arranged.

公开(公告)号：US5578847A

公开(公告)日：1996-11-26

申请号：US402570

申请日：1995-03-13

申请人： Masami Aoki ,  Takashi Yamada ,  Hiroshi Takato ,  Tohru Ozaki ,  Katsuhiko Hieda ,  Akihiro Nitayama

发明人： Masami Aoki ,  Takashi Yamada ,  Hiroshi Takato ,  Tohru Ozaki ,  Katsuhiko Hieda ,  Akihiro Nitayama

IPC分类号： H01L21/822 ,  G11C11/401 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10817 ,  H01L27/0207 ,  H01L27/10852 ,  H01L27/10882 ,  Y10S257/907

摘要： A plurality of bit line contacts provided on one bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL and a plurality of bit line contacts provided on an adjacent bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL which is different from the space in which a corresponding one of the bit line contacts formed on the former bit line is arranged.

摘要翻译： 设置在一个位线BL上的多个位线触点布置在每个设置在每个相邻的两个字线WL之间的每隔一个空间中，并且设置在相邻位线BL上的多个位线触点彼此布置 每个相邻的两个字线WL之间的空间不同于其中布置在前位线上形成的位线触点中的相应一个的空间。

公开(公告)号：US5488242A

公开(公告)日：1996-01-30

申请号：US156931

申请日：1993-11-24

申请人： Kazumasa Sunouchi ,  Hiroshi Takato ,  Tohru Ozaki ,  Naoko Okabe ,  Katsuhiko Hieda ,  Fumio Horiguchi ,  Akihiro Nitayama ,  Takashi Yamada ,  Kouji Hasimoto ,  Satosi Inoue

发明人： Kazumasa Sunouchi ,  Hiroshi Takato ,  Tohru Ozaki ,  Naoko Okabe ,  Katsuhiko Hieda ,  Fumio Horiguchi ,  Akihiro Nitayama ,  Takashi Yamada ,  Kouji Hasimoto ,  Satosi Inoue

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L27/02 ,  H01L29/68 ,  H01L29/92

CPC分类号： H01L27/10829

摘要： In a DRAM having a structure in which a storage node electrode is formed via an insulator film in a trench formed in a memory cell region to thereby form a capacitor, and in which the storage node electrode is connected in the source/drain regions of a MOSFET through a storage node contact formed in a part of the insulator film, the trench is disposed so as to deviate widthwise in a channel region of the MOSFET, so that the distance between adjacent element regions is reduced without causing misalignment of masks used in the formation of the storage node contact, thereby to provide a miniaturized high-reliability DRAM. In addition, the storage node contact and the trench can be formed in large size.

摘要翻译： 在具有通过形成在存储单元区域中的沟槽中的绝缘膜形成存储节点电极从而形成电容器的结构的DRAM中，并且其中存储节点电极连接在源极/漏极区域 MOSFET通过形成在绝缘膜的一部分中的存储节点接触，沟槽设置成在MOSFET的沟道区域中宽度偏离，使得相邻元件区域之间的距离减小，而不会导致在 形成存储节点接触，从而提供小型化的高可靠性DRAM。 此外，存储节点接触和沟槽可以形成为大尺寸。

公开(公告)号：US20120139024A1

公开(公告)日：2012-06-07

申请号：US13050297

申请日：2011-03-17

申请人： Takayuki TOBA ,  Tohru Ozaki

发明人： Takayuki TOBA ,  Tohru Ozaki

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/11524 ,  H01L27/11534 ,  H01L29/66825

摘要： In one embodiment, a nonvolatile semiconductor memory includes a memory cell array, a first silicon nitride film and a second silicon nitride film. The memory cell array includes NAND cell units. Each of the NAND cell units has memory cell transistors, a source-side select gate transistor and a drain-side select gate transistor. The source-side select gate transistors is disposed in such a manner as to face each other and the drain-side select gate transistors is disposed in such a manner as to face each other. The first silicon nitride film is present in a region between the source-side select gate transistors and is disposed at a position lowest from the upper surface of the semiconductor substrate. The second silicon nitride film is formed in a region between the drain-side select gate transistors and is disposed at a position lowest from the upper surface of the semiconductor substrate.

摘要翻译： 在一个实施例中，非易失性半导体存储器包括存储单元阵列，第一氮化硅膜和第二氮化硅膜。 存储单元阵列包括NAND单元单元。 每个NAND单元单元具有存储单元晶体管，源极选择栅极晶体管和漏极侧选择栅极晶体管。 源极侧选择栅极晶体管以彼此面对的方式设置，并且漏极侧选择栅极晶体管以彼此面对的方式设置。 第一氮化硅膜存在于源极选择栅晶体管之间的区域中，并且设置在从半导体衬底的上表面最低的位置。 第二氮化硅膜形成在漏极侧选择栅晶体管之间的区域中，并且设置在从半导体衬底的上表面最低的位置。

公开(公告)号：US20100320518A1

公开(公告)日：2010-12-23

申请号：US12869502

申请日：2010-08-26

申请人： Tohru Ozaki

发明人： Tohru Ozaki

IPC分类号： H01L27/06

CPC分类号： H01L28/60 ,  G11C11/22 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a semiconductor device including: a transistor including: a source, a drain and a gate; first and second plugs on the source and the drain; a third plug on the gate to have a top face higher than that of the first plug; an interlayer insulating film covering the transistor and the first to the third plugs; a ferroelectric capacitor on the interlayer insulating film, one electrode thereof being connected to the first plug; a barrier film covering surfaces of the ferroelectric capacitor and the interlayer insulating film to prevent a substance affecting the ferroelectric capacitor from entering therethrough; and fourth and fifth plugs disposed on the second and the third plugs and connected thereto through connection holes formed in the barrier film.

摘要翻译： 根据本发明的一个方面，提供了一种半导体器件，包括：晶体管，包括：源极，漏极和栅极; 源极和漏极上的第一和第二插头; 栅极上的第三个插头具有高于第一插头的顶面; 覆盖晶体管和第一至第三插头的层间绝缘膜; 层间绝缘膜上的铁电电容器，其一个电极连接到第一插头; 覆盖铁电电容器和层间绝缘膜的表面的阻挡膜，以防止影响铁电电容器的物质进入其中; 以及设置在第二和第三插头上的第四和第五插头，并且通过形成在阻挡膜中的连接孔与其连接。

公开(公告)号：US07816717B2

公开(公告)日：2010-10-19

申请号：US12020210

申请日：2008-01-25

申请人： Tohru Ozaki

发明人： Tohru Ozaki

IPC分类号： H01L21/00 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  Y10S257/905 ,  Y10S257/906 ,  Y10S257/908

摘要： A semiconductor memory device, comprising: a semiconductor substrate; a memory cell section comprising a memory transistor provided on the semiconductor substrate, the memory transistor including a first gate electrode provided on the semiconductor substrate with a gate insulating film interposed therebetween, and a source and drain provided at both sides of the first gate electrode on the semiconductor substrate, and a ferroelectric capacitor provided above the memory transistor, the ferroelectric capacitor including a first electrode film connected to any one of a source and drain of the memory transistor, a second electrode film connected to the other one of the drain and source of the memory transistor, and a ferroelectric film provided between the first electrode film and the second electrode film, the memory cell section having the memory transistor and the ferroelectric capacitor connected in parallel to each other; and a select transistor section, comprising a select transistor provided at an end of the memory cell section, the select transistor including a second gate electrode provided on the semiconductor substrate with the gate insulating film interposed therebetween, and a source and drain provided at both sides of the second gate electrode on the semiconductor substrate, and a third electrode film connected to the source and drain of the select transistor and connected to a bit line via a bit line contact.

摘要翻译： 一种半导体存储器件，包括：半导体衬底; 存储单元部分，包括设置在所述半导体衬底上的存储晶体管，所述存储晶体管包括设置在所述半导体衬底上的栅极绝缘膜之间的第一栅电极，以及设置在所述第一栅电极的两侧的源极和漏极， 所述半导体衬底和设置在所述存储晶体管上方的强电介质电容器，所述强电介质电容器包括连接到所述存储晶体管的源极和漏极中的任一个的第一电极膜，连接到所述漏极和源极中的另一个的第二电极膜 以及设置在第一电极膜和第二电极膜之间的铁电体膜，具有彼此并联连接的存储晶体管和强电介质电容器的存储单元部分; 以及选择晶体管部分，包括设置在存储单元部分的一端的选择晶体管，所述选择晶体管包括设置在半导体衬底上的栅极绝缘膜之间的第二栅电极，以及设置在两侧的源极和漏极 的第二栅极电极，以及连接到选择晶体管的源极和漏极并经由位线接触连接到位线的第三电极膜。

公开(公告)号：US20100163943A1

公开(公告)日：2010-07-01

申请号：US12559358

申请日：2009-09-14

申请人： Tohru Ozaki

发明人： Tohru Ozaki

IPC分类号： H01L27/115 ,  H01L21/8246

CPC分类号： H01L27/11507 ,  H01L21/76895 ,  H01L28/55

摘要： A memory includes a first interlayer on transistors; a first and second plugs connected to the transistor; ferroelectric capacitors; a second interlayer covering a side surface of the capacitor; a local interconnection connecting the second plug to the upper electrode, wherein two upper electrodes adjacent to each other on the second plug are connected to the second plug, the lower electrodes adjacent to each other on the first plug are connected to the first plug, cell blocks comprising the connected capacitors are arranged, cell blocks adjacent to each other are arranged to be shifted by a half pitch of the local interconnection, a first gap between two capacitors adjacent to each other on the second plug is larger than twice a thickness of the second interlayer, and a second gap between the cell blocks adjacent to each other is smaller than twice the thickness of the second interlayer.

摘要翻译： 存储器包括晶体管上的第一中间层; 连接到所述晶体管的第一和第二插头; 铁电电容器; 覆盖所述电容器的侧表面的第二夹层; 将第二插头连接到上电极的局部互连，其中在第二插头上彼此相邻的两个上电极连接到第二插头，在第一插头上彼此相邻的下电极连接到第一插头单元 包括连接的电容器的块被布置成彼此相邻的单元块被布置成以局部互连的半间距偏移，在第二插头上彼此相邻的两个电容器之间的第一间隙大于 第二中间层和彼此相邻的电池块之间的第二间隙小于第二中间层的厚度的两倍。

公开(公告)号：US20090127602A1

公开(公告)日：2009-05-21

申请号：US12252451

申请日：2008-10-16

申请人： Tohru Ozaki

发明人： Tohru Ozaki

IPC分类号： H01L29/51 ,  H01L21/02 ,  G11C11/22 ,  H01L29/68

CPC分类号： H01L27/11507 ,  H01L21/76831 ,  H01L21/76897 ,  H01L27/11502 ,  H01L28/55

摘要： This disclosure concerns a memory including transistors provided on a substrate; ferroelectric capacitors provided on the transistors, the ferroelectric capacitors respectively including a ferroelectric film provided between a lower electrode and an upper electrode; and a barrier film covering a first side surface of the ferroelectric capacitor, and blocking passing of hydrogen, wherein adjacent two of the ferroelectric capacitors connected in the lower electrode form one capacitor unit, a plurality of the capacitor units connected in the upper electrode form one capacitor chain, the capacitor units are arranged with a deviation of a half pitch of the capacitor unit in adjacent plurality of capacitor chains, and when D1 is a distance between the adjacent ferroelectric capacitors within the capacitor unit, D2 is a distance between the adjacent capacitor chains, and D3 is a distance between the adjacent capacitor units within the capacitor chain, D3 is larger than D1 and D2.

摘要翻译： 本公开涉及包括设置在基板上的晶体管的存储器; 设置在晶体管上的铁电电容器，铁电电容器分别包括设置在下电极和上电极之间的铁电体膜; 以及覆盖所述强电介质电容器的第一侧面的阻挡膜和阻挡氢的通过，其中，连接在所述下部电极中的相邻的两个所述铁电电容器形成一个电容器单元，在所述上部电极中连接的多个所述电容器单元形成一个 电容器链，电容器单元在相邻的多个电容器链中以电容器单元的半间距的偏差排列，并且当D1是电容器单元内的相邻强电介质电容器之间的距离时，D2是相邻电容器之间的距离 链，D3是电容器链内的相邻电容器单元之间的距离，D3大于D1和D2。

公开(公告)号：US07312488B2

公开(公告)日：2007-12-25

申请号：US11134414

申请日：2005-05-23

申请人： Tohru Ozaki ,  Iwao Kunishima

发明人： Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L29/76

CPC分类号： H01L27/11507 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11509 ,  H01L28/57

摘要： There is provided a semiconductor storage device comprising a ferroelectric capacitor superior in barrier capability against penetration of hydrogen from all directions including a transverse direction. The device comprises a transistor formed on a semiconductor substrate, the ferroelectric capacitor formed above the transistor and including a lower electrode, a ferroelectric film, and an upper electrode, a first hydrogen barrier film which continuously surrounds side portions of a ferroelectric capacitor cell array constituted of a plurality of ferroelectric capacitors, and a second hydrogen barrier film which is formed above the ferroelectric capacitor cell array and which is brought into contact with the first hydrogen barrier film in the whole periphery.

摘要翻译： 提供了一种包括铁电电容器的半导体存储装置，该铁电电容器的阻挡能力优于氢气从包括横向的所有方向渗透。 该器件包括形成在半导体衬底上的晶体管，形成在晶体管上方并包括下电极，铁电体膜和上电极的铁电电容器，连续围绕构成的铁电电容器单元阵列的侧部的第一氢阻挡膜 的多个强电介质电容器，以及形成在铁电体电容器单元阵列上方并与整个周边与第一氢阻挡膜接触的第二氢阻挡膜。