公开(公告)号：US4241359A

公开(公告)日：1980-12-23

申请号：US882738

申请日：1978-03-02

申请人： Katsutoshi Izumi ,  Masanobu Doken ,  Hisashi Ariyoshi

发明人： Katsutoshi Izumi ,  Masanobu Doken ,  Hisashi Ariyoshi

IPC分类号： H01L27/00 ,  H01L21/02 ,  H01L21/265 ,  H01L21/331 ,  H01L21/762 ,  H01L21/86 ,  H01L27/12 ,  H01L29/06 ,  H01L29/73 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/86 ,  H01L21/26533 ,  H01L21/76264 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/78612 ,  H01L29/78654 ,  H01L21/76267 ,  H01L21/76281 ,  H01L21/76289

摘要： A semiconductor manufacturing method and device made therefrom by forming an insulating SiO.sub.2 film on both surfaces of a silicon substrate using an ion implantation process to form a buried SiO.sub.2 layer within the substrate a predetermined depth beneath one of the substrate surfaces, isolating a body of the substrate layer lying above the buried layer, and forming a semiconductive device in the isolated body. The surface layers of SiO.sub.2 serve to mechanically balance the internal strains generated within the substrate during the formation of the buried layer and thereby prevent the creation of mechanical imperfections in the surface portions of the substrate.

摘要翻译： 一种半导体制造方法和装置，其通过使用离子注入工艺在硅衬底的两个表面上形成绝缘的SiO 2膜，以在衬底内的一个衬底表面之下的预定深度下形成掩埋的SiO 2层， 衬底层位于掩埋层之上，并在隔离体中形成半导体器件。 SiO 2的表面层用于在形成掩埋层期间机械地平衡在衬底内产生的内部应变，从而防止在衬底的表面部分中产生机械缺陷。

公开(公告)号：US4890370A

公开(公告)日：1990-01-02

申请号：US255054

申请日：1988-10-07

申请人： Susumu Fukuda ,  Hisashi Ariyoshi ,  Toru Kasanami

发明人： Susumu Fukuda ,  Hisashi Ariyoshi ,  Toru Kasanami

IPC分类号： H01L41/08 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H2003/021 ,  Y10T29/42

摘要： A manufacturing method for an integrated resonator is disclosed wherein a mass of O.sup.+ ions are implanted into a silicon monocrystal substrate from one side thereof, a buried SiO.sub.2 layer is formed by annealing the ion implanted substrate, an SiO.sub.2 layer is formed on the surface of the substrate by oxidizing it, at least one slit is formed on the SiO.sub.2 layer for etching a predetermined area of the silicon monocrystal layer sandwich between two SiO.sub.2 layers to form a cavity and, a piezo-electric resonator is formed on an area of the surfacial SiO.sub.2 layer corresponding to the cavity in the substrate.

摘要翻译： 公开了一种用于集成谐振器的制造方法，其中O +离子的质​​量从其一侧注入硅单晶衬底中，通过对离子注入衬底进行退火而形成掩埋的SiO 2层，在该表面上形成SiO 2层 在SiO 2层上形成至少一个狭缝，用于蚀刻在两个SiO 2层之间夹层的硅单晶层的预定区域以形成空腔，并且在表面SiO 2的区域上形成压电谐振器 层对应于衬底中的空腔。

公开(公告)号：US5306943A

公开(公告)日：1994-04-26

申请号：US860440

申请日：1992-03-30

申请人： Hisashi Ariyoshi ,  Masaaki Sueyoshi ,  Kouichi Sakamoto ,  Susumu Fukuda

发明人： Hisashi Ariyoshi ,  Masaaki Sueyoshi ,  Kouichi Sakamoto ,  Susumu Fukuda

IPC分类号： H01L21/28 ,  H01L21/329 ,  H01L29/872 ,  H01L29/48

CPC分类号： H01L29/66143 ,  H01L21/28 ,  H01L29/872 ,  Y10S257/916

摘要： A Schottky barrier diode includes a semiconductor substrate, an ohmic electrode formed on a first region of the semiconductor substrate, and a Schottky metal electrode formed on a second region spaced apart from the first region on the semiconductor substrate. The Schottky electrode includes at least one ohmic portion forming an ohmic contact with the semiconductor substrate, whereby rectifying characteristics of the Schottky barrier diode are improved.

摘要翻译： 肖特基势垒二极管包括半导体衬底，形成在半导体衬底的第一区域上的欧姆电极和形成在与半导体衬底上的第一区域间隔开的第二区域上的肖特基金属电极。 肖特基电极包括与半导体衬底形成欧姆接触的至少一个欧姆部分，从而提高了肖特基势垒二极管的整流特性。

公开(公告)号：US6008509A

公开(公告)日：1999-12-28

申请号：US998248

申请日：1997-12-24

申请人： Makoto Inai ,  Hiroyuki Seto ,  Fujio Okui ,  Susumu Fukuda ,  Hisashi Ariyoshi

发明人： Makoto Inai ,  Hiroyuki Seto ,  Fujio Okui ,  Susumu Fukuda ,  Hisashi Ariyoshi

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/778 ,  H01L29/80 ,  H01L29/772

CPC分类号： H01L29/802

摘要： A heterostructure insulated-gate field effect transistor comprises a channel layer, barrier layer and a contact layer. The barrier layer is made of a material having an electron affinity smaller than that of the channel layer and equal to that of the contact layer. Due to the single heterostructure, the series resistance between the channel layer and the source (drain) electrode can be decreased without employing complicated selective ion implanting or selective epitaxial growing method.

摘要翻译： 异质结构绝缘栅场效应晶体管包括沟道层，势垒层和接触层。 阻挡层由电子亲和力小于沟道层的电子亲和力的材料制成，并且等于接触层的电子亲和力。 由于单异质结构，可以减少沟道层和源极（漏极）之间的串联电阻，而不需要采用复杂的选择性离子注入或选择性外延生长法。

公开(公告)号：US4845044A

公开(公告)日：1989-07-04

申请号：US239337

申请日：1988-07-28

申请人： Hisashi Ariyoshi ,  Toru Kasanami ,  Susumu Fukuda

发明人： Hisashi Ariyoshi ,  Toru Kasanami ,  Susumu Fukuda

IPC分类号： H01L21/322 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/265 ,  H01L27/12

CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02658 ,  Y10S438/933

摘要： A production method for producing a semiconductor device by growing a crystalline compound semiconductor on a monocrystalline silicon substrate is comprised of a step for forming a transition domain varying from a monocrystalline silicon layer to a polycrystalline silicon layer in the silicon substrate by implanting oxygen ions into the silicon substrate and annealing the silicon substrate and a step for depositing a compound semiconductor layer on the silicon substrate.

摘要翻译： 通过在单晶硅衬底上生长晶体化合物半导体来制造半导体器件的生产方法包括通过将氧离子注入到硅衬底中形成从单晶硅层到硅衬底中的多晶硅层的转变区域的步骤 硅衬底并退火硅衬底以及在硅衬底上沉积化合物半导体层的步骤。

公开(公告)号：US5517162A

公开(公告)日：1996-05-14

申请号：US136582

申请日：1993-10-13

申请人： Hisashi Ariyoshi

发明人： Hisashi Ariyoshi

IPC分类号： H01P1/205 ,  H01P11/00 ,  H05K1/02 ,  H05K1/18 ,  H05K3/34 ,  H01P7/04

CPC分类号： H01P1/2056 ,  H05K1/0243 ,  H05K3/3436 ,  H05K3/3442 ,  H01L2224/10175 ,  H05K2201/09381 ,  H05K2201/10068 ,  H05K2201/10734 ,  H05K2201/10969 ,  H05K2201/10984 ,  H05K2201/2081 ,  H05K3/3431 ,  H05K3/3452 ,  Y02P70/613

摘要： A dielectric resonator device includes a dielectric member, inner conductors provided in the dielectric member, an outer conductor formed on an outer surface of the dielectric member, signal input and output electrodes formed on the outer surface of the dielectric member opposing a mounting substrate and coupled with the inner conductors, and solder bumps formed on the outer conductor on its surface opposing the mounting substrate and on the signal input and output electrodes. By heating the dielectric resonator device opposing the mounting substrate, electrical and mechanical connections may be made therebetween through the solder bumps, while preventing the formation of solder bridges.

摘要翻译： 介质谐振器装置包括电介质构件，设置在电介质构件中的内导体，形成在电介质构件的外表面上的外导体，形成在与安装基板相对的电介质构件的外表面上的信号输入和输出电极， 其内部导体和形成在其表面上的外部导体上的焊料凸块相对于安装基板和信号输入和输出电极。 通过加热与安装基板相对的介质谐振器装置，可以通过焊料凸块在其间形成电气和机械连接，同时防止形成焊接桥。