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1.发明授权
公开(公告)号：US5315422A
公开(公告)日：1994-05-24
申请号：US22016
申请日：1993-02-24
CPC分类号： B82Y20/00 , G02F1/3517 , G02F3/00 , G02F1/017 , G02F1/225 , G02F1/3556
摘要： An optical logic element is disclosed which performs an XOR operation through utilization of the high-speed property of light. On each branched waveguide of a Mach-Zehnder interference type optical waveguide there is provided a phase modulating element whose refractive index undergoes a change when it is irradiated by light. The interference type optical waveguide is adapted to provide different optical output levels when the refractive index changes of the phase modulating elements are both zero or a predetermined value and when they differ from each other. Thus, the optical logic element is capable of performing the XOR or XNOR operation at an ultrahigh speed.
摘要翻译： 公开了一种光逻辑元件，其通过利用光的高速特性来执行异或运算。 在马赫曾德尔干涉型光波导的每个分支波导上，提供了一种相位调制元件，其在被光照射时其折射率发生变化。 干涉型光波导适合于当相位调制元件的折射率变化为零或预定值并且当它们彼此不同时，提供不同的光输出电平。 因此，光逻辑元件能够以超高速执行XOR或XOR运算。
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公开(公告)号：US4918496A
公开(公告)日：1990-04-17
申请号：US213608
申请日：1988-06-30
CPC分类号： B82Y20/00 , H01S5/34313 , H01S2302/00 , H01S5/0206 , H01S5/3201 , H01S5/3218 , H01S5/3403 , H01S5/3409 , H01S5/34306
摘要： An infrared emitting device for use in the 2 to 3 .mu.m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 .mu.m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate.
摘要翻译： 一种用于2〜3μm区域的红外发射装置，其阈值电流低，在宽温度范围内工作。 根据本发明，使用InP衬底代替用于2至3μm红外半导体激光器的GaSb衬底和InAs衬底。 此外，作为有源层或覆层，采用与InP衬底的晶格常数不同的多个半导体层之一。
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3.发明授权Wavelength tunable semiconductor laser with narrow band-pass active filter region 失效具有窄带通有源滤波器区域的波长可调谐半导体激光器
公开(公告)号：US4852108A
公开(公告)日：1989-07-25
申请号：US216397
申请日：1988-07-07
申请人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
发明人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
IPC分类号： H01S5/00 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/14
CPC分类号： H01S5/06258 , H01S5/10 , H01S5/1025 , H01S5/12 , H01S5/14 , Y10S372/704
摘要： A semiconductor laser is disclosed in which a light emitting region having a light emitting layer and a waveguide region having a waveguide layer which is coupled to at least one side of the light emitting layer with a high efficiency are integrated on the same substrate; the light emitting region includes an active filter section having a diffraction grating equipped with a band-pass filter function; the light emitting region and the waveguide region are electrically isolated and are each provided with an electrode; and the oscillation wavelength of the semiconductor lase is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section.
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公开(公告)号：US4731641A
公开(公告)日：1988-03-15
申请号：US892479
申请日：1986-08-05
申请人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
IPC分类号： H01L31/107 , H01L31/18 , H01L29/201 , H01L27/14 , H01L31/08
CPC分类号： H01L31/1075 , H01L31/18
摘要： An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
摘要翻译： 具有量子阱层的雪崩光电二极管，其中在载流子倍增区域中形成由两个不同半导体构成的薄膜周期性多层结构，载流子的有效电离系数比由薄膜形成的量子阱层提高， 多层周期性结构，只有电离系数较大的电子注入乘法区域，从而降低APD中的噪声。
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公开(公告)号：US4682196A
公开(公告)日：1987-07-21
申请号：US806746
申请日：1985-12-09
IPC分类号： H01L29/205 , H01L31/0352 , H01L31/11 , H01L27/14 , H01L29/12
CPC分类号： H01L29/205 , H01L31/035281 , H01L31/11 , Y02E10/50
摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
摘要翻译： 一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层 大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一 并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。 根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。 可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。
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公开(公告)号：US4660934A
公开(公告)日：1987-04-28
申请号：US710984
申请日：1985-03-12
CPC分类号： G03F7/095 , G02B5/1857 , G03F7/001 , Y10S359/90
摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
摘要翻译： 制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个 负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。 本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构 （P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。
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公开(公告)号：US4874216A
公开(公告)日：1989-10-17
申请号：US210640
申请日：1988-06-23
IPC分类号： H04B10/27 , G02B6/34 , G02F1/01 , G02F1/015 , G02F1/025 , G02F1/125 , G02F1/313 , H04B10/00 , H04B10/29
CPC分类号： G02B6/12007 , G02B6/29329 , G02B6/29395 , G02F1/3137 , G02F1/0126 , G02F1/3138 , G02F2001/0152 , G02F2001/0154 , G02F2201/305 , G02F2203/055
摘要： A variable-waveguide optical branching filter is disclosed, in which a diffraction grating is formed in the cross region of two crossing waveguides, only light of a particular wavelength which is determined by the period of the diffraction grating is branched to a desired one of the waveguides, and the refractive index of the cross region is changed by control of a voltage or a current, or by way of irradiation with light, thereby changing the wavelength of light to be branched.
摘要翻译： 公开了一种可变波导光分波器，其中在两个交叉波导的交叉区域中形成衍射光栅，只有由衍射光栅的周期确定的特定波长的光被分支到所需的一个 波导，并且通过控制电压或电流或通过照射光来改变交叉区域的折射率，从而改变要分支的光的波长。
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公开(公告)号：US4805975A
公开(公告)日：1989-02-21
申请号：US143820
申请日：1988-01-13
申请人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
发明人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
CPC分类号： G02B6/29338 , G02F1/3515
摘要： An optical waveguide switch is disclosed in which at least two optical waveguides intersect at a predetermined angle to each other to provide, on both sides of the intersection region, input side optical waveguide regions for receiving incident light and output side optical waveguide regions for outputting guided light, and in which the incident light is input into one of the input side optical waveguide regions and is output from a desired one of the output side optical waveguide regions. In accordance with the present invention, an optically nonlinear material whose refractive index undergoes a substantial variation, depending on the intensity of incident light, is disposed in the intersection region. A loop is provided in association with a corresponding one of the input side optical waveguide regions for essentially branching the guided light in the corresponding waveguide output side optical waveguide region for feedback to the corresponding input side optical waveguide region.
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公开(公告)号：US4665527A
公开(公告)日：1987-05-12
申请号：US669093
申请日：1984-11-06
CPC分类号： H01S5/18394 , H01S5/0424 , H01S5/0425
摘要： A distributed feedback semiconductor laser, in which a DFB region is formed by a plurality of first semiconductor layers and a plurality of second semiconductor layers larger in energy gap than the first semiconductor layers which are alternately arranged on a substrate with a period for developing a Bragg reflection at a desired wavelength. A p-type region is formed in a part of the DFB region in a manner to provide a plane of junction across the plurality of first semiconductor layers and the plurlaity of second semiconductor layers while an n-type region is formed in the remaining part of the DFB region. The plurality of first semiconductor layers and the plurality of second semiconductor layers are alternately deposited to form the DFB region.
摘要翻译： 一种分布式反馈半导体激光器，其中DFB区域由多个第一半导体层形成，并且能量间隔大于第一半导体层的多个第二半导体层，该第二半导体层交替布置在具有用于显影布拉格的周期的基板上 在所需波长的反射。 在DFB区域的一部分中，以提供跨越多个第一半导体层的结的平面和第二半导体层的多重性的方式形成p型区域，而在其余部分中形成n型区域 DFB区域。 多个第一半导体层和多个第二半导体层交替沉积以形成DFB区域。
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公开(公告)号：US4653058A
公开(公告)日：1987-03-24
申请号：US487124
申请日：1983-04-21
CPC分类号： H01S5/0264 , H01S5/12 , H01S5/2275
摘要： A distributed feedback semiconductor laser with a monitor, which has periodic corrugations on a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of a current into said light emitting layer. In accordance with the present invention, a laser region forming said distributed feedback semiconductor laser and a monitor region for detecting the output of said laser region are disposed on the same substrate. A gap between said monitor region and said laser region is filled with a semiconductor of an energy bandgap larger than that of the light emitting layer of said laser region.
摘要翻译： 一种具有监视器的分布式反馈半导体激光器，其在光的行进方向上的发光层或邻接层上具有周期性波纹，并且通过将电流注入到所述发光层中而进行激光振荡。 根据本发明，形成所述分布式反馈半导体激光器的激光区域和用于检测所述激光区域的输出的监视区域设置在同一基板上。 所述监测区域和所述激光区域之间的间隙填充有比所述激光区域的发光层的能带隙大的能带隙的半导体。
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