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1.发明授权
公开(公告)号：US5315422A
公开(公告)日：1994-05-24
申请号：US22016
申请日：1993-02-24
CPC分类号： B82Y20/00 , G02F1/3517 , G02F3/00 , G02F1/017 , G02F1/225 , G02F1/3556
摘要： An optical logic element is disclosed which performs an XOR operation through utilization of the high-speed property of light. On each branched waveguide of a Mach-Zehnder interference type optical waveguide there is provided a phase modulating element whose refractive index undergoes a change when it is irradiated by light. The interference type optical waveguide is adapted to provide different optical output levels when the refractive index changes of the phase modulating elements are both zero or a predetermined value and when they differ from each other. Thus, the optical logic element is capable of performing the XOR or XNOR operation at an ultrahigh speed.
摘要翻译： 公开了一种光逻辑元件，其通过利用光的高速特性来执行异或运算。 在马赫曾德尔干涉型光波导的每个分支波导上，提供了一种相位调制元件，其在被光照射时其折射率发生变化。 干涉型光波导适合于当相位调制元件的折射率变化为零或预定值并且当它们彼此不同时，提供不同的光输出电平。 因此，光逻辑元件能够以超高速执行XOR或XOR运算。
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2.发明授权Semiconductor memory operating electrically and optically, retaining information without power supply 失效半导体存储器电和光学操作，保留信息而无需电源
公开(公告)号：US6147901A
公开(公告)日：2000-11-14
申请号：US227618
申请日：1999-01-08
摘要： The present invention provides a semiconductor memory capable of retaining information after removing a power supply and of storing information with an optical input. A memory cell is comprising an n-InP substrate, a first semiconductor (n-InGaAs) layer, a second semiconductor (i-InGaAs) layer, a third semiconductor (p-InGaAs) layer, a fourth semiconductor (i-InGaAs) layer and a fifth semiconductor (n-InGaAs) layer. The first to fifth semiconductor layers are stacked in this order on the n-InP substrate. A bias voltage is applied between the n-InP substrate and the fifth semiconductor layer to control a height of a TBD formed in the above multi-layer structure so that carriers may move and electrons can be stored in one of the second and fourth semiconductor layers.
摘要翻译： 本发明提供一种半导体存储器，其能够在去除电源之后保留信息并且使用光学输入存储信息。 存储单元包括n-InP衬底，第一半导体（n-InGaAs）层，第二半导体（i-InGaAs）层，第三半导体（p-InGaAs）层，第四半导体（i-InGaAs）层 和第五半导体（n-InGaAs）层。 第一至第五半导体层依次堆叠在n-InP衬底上。 在n-InP衬底和第五半导体层之间施加偏置电压以控制在上述多层结构中形成的TBD的高度，使得载流子可以移动，电子可以存储在第二和第四半导体层之一中 。
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公开(公告)号：US5423284A
公开(公告)日：1995-06-13
申请号：US209485
申请日：1994-03-14
申请人： Kohsuke Nishimura , Kazuo Sakai , Yasuyuki Nagao
发明人： Kohsuke Nishimura , Kazuo Sakai , Yasuyuki Nagao
摘要： A method which permits the growth of high-quality crystals of n-type II-VI compound semiconductors containing sulfur, by suppressing the reaction of a group III or VII element as a dopant with a group II material at low temperature. A raw material gas containing an organometallic material of the group III or organic material of the group VII is premixed with a raw material gas containing organic sulfur material, then the premixture is mixed with a raw material gas containing an organometallic material of the group II, and the mixture is used to grow a crystal of an n-type II-VI compound semiconductor on a semiconductor substrate by a metal organic vapor phase epitaxial growth method.
摘要翻译： 通过抑制III族或VII族元素作为掺杂剂与II族材料在低温下的反应，允许生长含有硫的n型II-VI化合物半导体的高质量晶体的方法。 将含有III族有机金属材料或VII族有机材料的原料气体与含有机硫材料的原料气体预混合，然后将预混合物与含有II族有机金属材料的原料气体混合， 并且通过金属有机气相外延生长法将混合物用于在半导体衬底上生长n型II-VI化合物半导体的晶体。
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4.发明授权Method for manufacturing nitrogen-doped group II-VI compound semiconductor thin films 失效氮掺杂基团II-VI化合物半导体薄膜的制造方法
公开(公告)号：US5450813A
公开(公告)日：1995-09-19
申请号：US205953
申请日：1994-03-03
申请人： Kohsuke Nishimura , Yasuyuki Nagao , Kazuo Sakai
发明人： Kohsuke Nishimura , Yasuyuki Nagao , Kazuo Sakai
IPC分类号： C30B23/08 , C30B25/02 , C30B29/48 , H01L21/205 , H01L21/363 , H01L21/365 , H01L33/28 , C30B23/06
CPC分类号： C30B25/02 , C30B29/48 , Y10T117/10 , Y10T117/1016
摘要： Nitrogen-doped group II-VI compound semiconductor thin film manufacturing method and apparatus which are applicable to an MOVPE process. The group II-VI compound semiconductor thin film manufacturing method according to the present invention is characterized by the use of osmium as a catalyst to activate nitrogen molecules. The growth device according to the present invention has a construction wherein a nitrogen gas introducing pipe for blowing a nitrogen gas against a semiconductor substrate is disposed in a reaction chamber for growing the group II-VI compound semiconductor thin film by the MOVPE process and the osmium is disposed between the semiconductor substrate and the nitrogen gas introducing pipe.
摘要翻译： 适用于MOVPE工艺的氮掺杂基团II-VI化合物半导体薄膜制造方法和装置。 根据本发明的II-VI族化合物半导体薄膜制造方法的特征在于使用锇作为催化剂活化氮分子。 根据本发明的生长装置具有这样的结构，其中用于将氮气吹向半导体衬底的氮气引入管设置在用于通过MOVPE工艺生长II-VI族化合物半导体薄膜的反应室中，并且锇 设置在半导体衬底和氮气引入管之间。
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公开(公告)号：US06403391B1
公开(公告)日：2002-06-11
申请号：US09481075
申请日：2000-01-11
申请人： Kohsuke Nishimura , Yasuyuki Nagao
发明人： Kohsuke Nishimura , Yasuyuki Nagao
IPC分类号： H01L2100
CPC分类号： H01L33/346
摘要： At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Since the one conductivity type nanostructure PS layer is formed by anodizing the non-degenerate n-type crystalline silicon layer whose thickness is established in advance, the thickness which can provides a maximum luminescence efficiency can be obtained correctly. Then a semiconductor light emitting device whose luminescence efficiency is improved without increasing an unnecessary series resistance is provided. An inexpensive semiconductor light emitting device having a large light emitting area can be provided, since silicon wafer having a large diameter can be employed as the material for light emission.
摘要翻译： 包括至少一个导电类型的纳米结构PS层，其厚度被控制，并且包括相反导电型纳米结构PS层和与这两个侧面接触布置的一个导电型介孔结构PS层。 由于通过阳极氧化预先形成厚度的非简并型n型结晶硅层来形成一个导电型纳米结构PS层，所以可以正确地获得可提供最大发光效率的厚度。 然后提供一种在不增加不必要的串联电阻的情况下提高发光效率的半导体发光器件。 可以提供具有大的发光面积的便宜的半导体发光器件，因为可以使用具有大直径的硅晶片作为发光材料。
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公开(公告)号：US4702791A
公开(公告)日：1987-10-27
申请号：US879905
申请日：1986-06-30
申请人： Yoshinori Mimura , Yasuyuki Nagao
发明人： Yoshinori Mimura , Yasuyuki Nagao
CPC分类号： C23C16/407 , C23C16/40 , C30B25/02 , C30B29/22 , C30B29/225
摘要： A method is disclosed for manufacturing a bismuth-containing oxide single crystal, in which vapor of bismuth or alkylated bismuth and vapor of an organic compound of other metal ion components of a crystal are introduced into a heated reaction chamber to be reacted with oxygen gas, so that the desired bismuth-containing oxide single crystal is deposited on a substrate prepared in the reaction chamber. A Bi.sub.12 SiO.sub.20 single oxide crystal can be produced by the use of bismuth or alkylated bismuth and alkylated silicon or silicon alkoxide or by the use of bismuth or alkylated bismuth and alkylated germanium or germanium alkoxide. A (Y.sub.1--x Bi.sub.x).sub.3 Fe.sub.5 O.sub.12 single crystal can be poduced by the use of bismuth or alkylated bismuth yttrium alkoxide and carbonyl iron.
摘要翻译： 公开了一种用于制造含铋氧化物单晶的方法，其中将铋或烷基化铋的蒸气和其它金属离子组分的有机化合物的蒸气引入加热的反应室中以与氧气反应， 使得所需的含铋氧化物单晶沉积在反应室中制备的基板上。 Bi12SiO20单氧化物晶体可以通过使用铋或烷基化铋和烷基化硅或硅烷醇盐或通过使用铋或烷基化铋和烷基化锗或锗烷氧化物来生产。 A（Y1-xBix）3Fe5O12单晶可以通过使用铋或烷基化铋钇醇氧化物和羰基铁来提高。
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公开(公告)号：US06782201B2
公开(公告)日：2004-08-24
申请号：US09731587
申请日：2000-12-07
申请人： Shu Yamamoto , Tetsuya Miyazaki , Yasuyuki Nagao , Tomohiro Otani
发明人： Shu Yamamoto , Tetsuya Miyazaki , Yasuyuki Nagao , Tomohiro Otani
IPC分类号： H04B1008
CPC分类号： H04J14/0291 , H04J14/0283 , H04Q2011/0058 , H04Q2011/0081
摘要： A four fiber ring network optical switching circuit capable of realizing the bridge function at times of the span switching and the ring switching economically by a very compact structure is disclosed. A four fiber ring network optical switching circuit is formed by a 10×8 optical matrix switch having ten input ports and eight output ports, and two branching elements adapted to branch each one of two optical signals among eight optical signals that are inputs of the four fiber ring network optical switching circuit, into two identical optical signals, and to enter the two identical optical signals into two input ports of the 10×8 optical matrix switch such that the eight optical signals are entered into the ten input ports of the 10×8 optical matrix switch as ten optical signals.
摘要翻译： 公开了一种能够通过非常紧凑的结构经济地实现跨度切换时的桥接功能和环形开关的四光纤环网光交换电路。 四光纤环网光交换电路由具有十个输入端口和八个输出端口的10×8光矩阵开关形成，并且两个分支元件适合于在作为四个光纤环的输入的八个光信号之中分支两个光信号中的每一个 网络光交换电路分成两个相同的光信号，并将两个相同的光信号输入到10x8光矩阵开关的两个输入端口，使得八个光信号进入10x8光矩阵开关的十个输入端口，为十 光信号。
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公开(公告)号：US4559573A
公开(公告)日：1985-12-17
申请号：US440299
申请日：1982-11-09
申请人： Shinsuke Tanaka , Fujio Tanaka , Yasuyuki Nagao , Nobutake Imamura , Chuichi Ota
发明人： Shinsuke Tanaka , Fujio Tanaka , Yasuyuki Nagao , Nobutake Imamura , Chuichi Ota
IPC分类号： G11B11/10 , G11B5/66 , G11B5/72 , G11B11/105 , G11C13/06 , H01F10/12 , H01F10/13 , H01F10/14 , G11B23/00
CPC分类号： G11B5/72 , G11B11/10586 , G11B5/66 , Y10S428/90 , Y10T428/12549
摘要： A magneto-optical recording medium having an easy axis of magnetization in a direction perpendicular to the film surface, characterized in that a readout medium layer, a reflection layer and a recording medium layer are sequentially disposed in a direction of the incidence of a reading-out light, thereby to increase a reproduced output.
摘要翻译： 一种在与膜表面垂直的方向上具有易磁化轴的磁光记录介质，其特征在于，读出介质层，反射层和记录介质层依次设置在读取 - 从而增加再现的输出。
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9.发明授权Semiconductor light emitting device having nanostructure porous silicon and mesostructure porous silicon 失效具有纳米结构多孔硅和介观结构多孔硅的半导体发光器件
公开(公告)号：US6037612A
公开(公告)日：2000-03-14
申请号：US150276
申请日：1998-09-09
申请人： Kohsuke Nishimura , Yasuyuki Nagao
发明人： Kohsuke Nishimura , Yasuyuki Nagao
CPC分类号： H01L33/346
摘要： At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Since the one conductivity type nanostructure PS layer is formed by anodizing the non-degenerate n-type crystalline silicon layer whose thickness is established in advance, the thickness which can provides a maximum luminescence efficiency can be obtained correctly. Then a semiconductor light emitting device whose luminescence efficiency is improved without increasing an unnecessary series resistance is provided. An inexpensive semiconductor light emitting device having a large light emitting area can be provided, since silicon wafer having a large diameter can be employed as the material for light emission
摘要翻译： 包括至少一个导电类型的纳米结构PS层，其厚度被控制，并且包括相反导电型纳米结构PS层和与这两个侧面接触布置的一个导电型介孔结构PS层。 由于通过阳极氧化预先形成厚度的非简并型n型结晶硅层来形成一个导电型纳米结构PS层，所以可以正确地获得可提供最大发光效率的厚度。 然后提供一种在不增加不必要的串联电阻的情况下提高发光效率的半导体发光器件。 可以提供具有大的发光面积的便宜的半导体发光器件，因为可以使用具有大直径的硅晶片作为发光材料
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公开(公告)号：US5105302A
公开(公告)日：1992-04-14
申请号：US484045
申请日：1990-02-22
申请人： Yasuyuki Nagao , Yoshinori Mimura
发明人： Yasuyuki Nagao , Yoshinori Mimura
IPC分类号： G02F1/03
CPC分类号： G02F1/0338
摘要： A spatial light modulator is disclosed, in which a low dark resistance single-crystal plate is used which is formed of Bi.sub.12 MO.sub.20 (where M is Si, Ge or Ti) or similar type crystal, doped with phosphorus (P) in the range of 0.03.ltoreq.P.ltoreq.0.2 in atomic percentage to provide a dark resistivity far lower than that of an undoped crystal, and a high dark resistance layer, which is of the same crystal structure as that of the single-crystal plate and lattice-matched therewith and has photoconductivity, electro-optic effect and a high dark resistivity, is provided on the light incident side of the single-crystal plate. A tapered low dark resistance single-crystal plate may be used which is formed of Bi.sub.12 MO.sub.20 (where M=Si, Ge, or Ti) or similar sillenite type crystal, doped with phosphorus (P) in the range of 0.03.ltoreq.P.ltoreq.0.2 in atomic percentage to provide a dark resistivity far lower than that of a phosphorus-free crystal, and a high dark resistance layer, which has the same crystal structure as that of the tapered single-crystal plate and produces photoconductivity and the electro-optic effect and a high dark resistivity, is provided on the light incident side of the tapered single-crystal plate, whereby the image write sensitivity and resolution can be made uniform throughout the device.
摘要翻译： 公开了一种空间光调制器，其中使用由Bi12MO20（其中M是Si，Ge或Ti）或类似类型的晶体，掺杂磷（P）在0.03的范围内形成的低暗电阻单晶板
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