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1.发明授权
公开(公告)号：US5315422A
公开(公告)日：1994-05-24
申请号：US22016
申请日：1993-02-24
CPC分类号： B82Y20/00 , G02F1/3517 , G02F3/00 , G02F1/017 , G02F1/225 , G02F1/3556
摘要： An optical logic element is disclosed which performs an XOR operation through utilization of the high-speed property of light. On each branched waveguide of a Mach-Zehnder interference type optical waveguide there is provided a phase modulating element whose refractive index undergoes a change when it is irradiated by light. The interference type optical waveguide is adapted to provide different optical output levels when the refractive index changes of the phase modulating elements are both zero or a predetermined value and when they differ from each other. Thus, the optical logic element is capable of performing the XOR or XNOR operation at an ultrahigh speed.
摘要翻译： 公开了一种光逻辑元件，其通过利用光的高速特性来执行异或运算。 在马赫曾德尔干涉型光波导的每个分支波导上，提供了一种相位调制元件，其在被光照射时其折射率发生变化。 干涉型光波导适合于当相位调制元件的折射率变化为零或预定值并且当它们彼此不同时，提供不同的光输出电平。 因此，光逻辑元件能够以超高速执行XOR或XOR运算。
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公开(公告)号：US4918496A
公开(公告)日：1990-04-17
申请号：US213608
申请日：1988-06-30
CPC分类号： B82Y20/00 , H01S5/34313 , H01S2302/00 , H01S5/0206 , H01S5/3201 , H01S5/3218 , H01S5/3403 , H01S5/3409 , H01S5/34306
摘要： An infrared emitting device for use in the 2 to 3 .mu.m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 .mu.m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate.
摘要翻译： 一种用于2〜3μm区域的红外发射装置，其阈值电流低，在宽温度范围内工作。 根据本发明，使用InP衬底代替用于2至3μm红外半导体激光器的GaSb衬底和InAs衬底。 此外，作为有源层或覆层，采用与InP衬底的晶格常数不同的多个半导体层之一。
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3.发明授权Wavelength tunable semiconductor laser with narrow band-pass active filter region 失效具有窄带通有源滤波器区域的波长可调谐半导体激光器
公开(公告)号：US4852108A
公开(公告)日：1989-07-25
申请号：US216397
申请日：1988-07-07
申请人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
发明人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
IPC分类号： H01S5/00 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/14
CPC分类号： H01S5/06258 , H01S5/10 , H01S5/1025 , H01S5/12 , H01S5/14 , Y10S372/704
摘要： A semiconductor laser is disclosed in which a light emitting region having a light emitting layer and a waveguide region having a waveguide layer which is coupled to at least one side of the light emitting layer with a high efficiency are integrated on the same substrate; the light emitting region includes an active filter section having a diffraction grating equipped with a band-pass filter function; the light emitting region and the waveguide region are electrically isolated and are each provided with an electrode; and the oscillation wavelength of the semiconductor lase is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section.
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公开(公告)号：US4731641A
公开(公告)日：1988-03-15
申请号：US892479
申请日：1986-08-05
申请人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
IPC分类号： H01L31/107 , H01L31/18 , H01L29/201 , H01L27/14 , H01L31/08
CPC分类号： H01L31/1075 , H01L31/18
摘要： An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
摘要翻译： 具有量子阱层的雪崩光电二极管，其中在载流子倍增区域中形成由两个不同半导体构成的薄膜周期性多层结构，载流子的有效电离系数比由薄膜形成的量子阱层提高， 多层周期性结构，只有电离系数较大的电子注入乘法区域，从而降低APD中的噪声。
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公开(公告)号：US4682196A
公开(公告)日：1987-07-21
申请号：US806746
申请日：1985-12-09
IPC分类号： H01L29/205 , H01L31/0352 , H01L31/11 , H01L27/14 , H01L29/12
CPC分类号： H01L29/205 , H01L31/035281 , H01L31/11 , Y02E10/50
摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
摘要翻译： 一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层 大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一 并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。 根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。 可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。
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公开(公告)号：US4660934A
公开(公告)日：1987-04-28
申请号：US710984
申请日：1985-03-12
CPC分类号： G03F7/095 , G02B5/1857 , G03F7/001 , Y10S359/90
摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
摘要翻译： 制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个 负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。 本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构 （P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。
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公开(公告)号：US4795225A
公开(公告)日：1989-01-03
申请号：US143816
申请日：1988-01-13
申请人： Kazuo Sakai , Yuichi Matsushima , Katsuyuki Utaka
发明人： Kazuo Sakai , Yuichi Matsushima , Katsuyuki Utaka
CPC分类号： B82Y20/00 , G02F1/01708 , G02F1/3138 , G02F2001/0152
摘要： An optical switch is disclosed in which a switching section for switching the optical path of an incident light is formed in a region where two semiconductor optical waveguides cross each other. The switching section is composed of n-, i-, p-, i- and n-type semiconductor layers laminated in that order, each i-type layer being formed by a superlattice layer composed of a plurality of semiconductor thin films so that the i-type layer is higher in the effective refractive index and smaller in the effective energy gap than each n-type layer. The impurity concentrations of the n-, i-, p-, i-, and n-type layers and the thicknesses of the i-, p-, and i-type layers are determined so that the i-, p- and i-type layers are depleted in a thermal equilibrium state.
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公开(公告)号：US4701930A
公开(公告)日：1987-10-20
申请号：US764217
申请日：1985-08-09
摘要： A distributed feedback semiconductor laser, in which the periodic corrugations in the first region and the second region of the light emitting region of the DFB laser have different lengths or depths to make the intensities of the Bragg reflection of the first region and the second region different from each other, thereby obtaining asymmetrical light outputs from the both sides of the DFB laser.
摘要翻译： 分布式反馈半导体激光器，其中DFB激光器的发光区域的第一区域和第二区域中的周期性波纹具有不同的长度或深度，以使得第一区域和第二区域的布拉格反射的强度不同 从而从DFB激光器的两侧获得不对称的光输出。
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公开(公告)号：US4653059A
公开(公告)日：1987-03-24
申请号：US688566
申请日：1985-01-03
摘要： A distributed feedback semiconductor laser which has periodic corrugations formed in a light emitting layer or an adjoining layer to extend in the direction of travel of light. A window region formed by a semiconductor layer larger in energy gap than the light emitting layer is provided on the extension line of one end of a laser region formed in the light emitting layer. The length of the window region is so limited as to prevent substantial reflection of laser output light in the window region. The end face of the laser on the opposite side from the window region is coated with a film for increasing reflectivity.
摘要翻译： 一种分布式反馈半导体激光器，其具有在发光层或相邻层中形成的周期性波纹，以在光的行进方向上延伸。 由形成在发光层的激光区域的一端的延长线上设置由能隙比发光层大的半导体层形成的窗口区域。 窗口区域的长度被限制以防止激光输出光在窗口区域中的实质反射。 在与窗口区域相反的一侧上的激光器的端面涂覆有用于增加反射率的膜。
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公开(公告)号：US4648096A
公开(公告)日：1987-03-03
申请号：US660934
申请日：1984-10-15
摘要： A distributed feedback semiconductor laser which has periodic corrugations in a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of carriers into said light emitting layer. In accordance with the present invention, there are provided, in the neighborhood of the center of a laser region, a region for changing the phase of the periodic corrugations by about 180 degrees, and, on the extension of the laser oscillation region at both sides thereof, a window region formed of a semiconductor larger in energy gap but smaller in refractive index than the light emitting layer, the length of the window region being so limited as to prevent substantial reflection of laser output light in the window region.
摘要翻译： 一种分布式反馈半导体激光器，其在光的行进方向上在发光层或邻接层中具有周期性波纹，并通过将载流子注入所述发光层来执行激光振荡。 根据本发明，在激光区域的中心附近设置用于将周期性波纹的相位改变约180度的区域，并且在两侧的激光振荡区域的延伸上 由能隙较大且折射率小于发光层的半导体形成的窗口区域，窗口区域的长度受到限制，以防止激光输出光在窗口区域中的实质反射。
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