公开(公告)号：US5188799A

公开(公告)日：1993-02-23

申请号：US854557

申请日：1992-03-19

申请人： Kazuhiko Mori ,  Minoru Kawasaki ,  Shin Yoshida ,  Hiroyuki Murase ,  Takashi Saito ,  Kouji Tanaka ,  Yoshio Shimura

发明人： Kazuhiko Mori ,  Minoru Kawasaki ,  Shin Yoshida ,  Hiroyuki Murase ,  Takashi Saito ,  Kouji Tanaka ,  Yoshio Shimura

IPC分类号： C22C1/10 ,  B23K35/30 ,  C22C9/06 ,  C22C29/18 ,  C22C32/00

CPC分类号： B23K35/302 ,  B23K35/0244 ,  B23K35/0255 ,  B23K35/0261 ,  B23K35/30 ,  C22C9/06

摘要： A wear-resistant copper-base alloy having superior self-lubricity includes, by weight %,Ni: 10.0 to 30.0%;Si: 0.5 to 3%;Co: 2.0 to 15.0%;at least one metal selected from the group consisting of Mo, W, Nb and V:2.0 to 15.0%; andthe balance being Cu and unavoidable impurities, and having a structure in which hard phase grains containing 5 vol% or more of silicide of at least one metal selected from the group consisting of Mo, W, Nb and V are uniformly dispersed in an amount of 10 to 60 vol% in a copper-rich matrix, to which 2.0 to 15.0% of Fe and/or 1.0 to 10.0% of Cr may be further added.

公开(公告)号：US6066191A

公开(公告)日：2000-05-23

申请号：US82193

申请日：1998-05-21

申请人： Kouji Tanaka ,  Takashi Saito ,  Tadashi Oshima

发明人： Kouji Tanaka ,  Takashi Saito ,  Tadashi Oshima

IPC分类号： C22C1/04 ,  C22C27/04 ,  C22C29/18 ,  C22C33/02

CPC分类号： C22C27/04 ,  C22C1/045 ,  C22C29/18

摘要： Disclosed is a hard molybdenum alloy which exhibits an excellent wear resistance against sliding wear and adhesive wear in a high temperature nonlubricating atmosphere, comprising at least one of nickel (Ni) and cobalt (Co) in an amount of from 14.0 to 43.0% by weight, silicon (Si) in an amount of from 3.0 to 8.0% by weight and molybdenum (Mo) in an amount of not less than 20.0% by weight. Also disclosed is a wear resistant alloy which includes the above hard molybdenum alloy as a reinforcing phase.

摘要翻译： 公开了在高温非润滑气氛中表现出优异的抗滑动磨损和耐磨损性的硬钼合金，其包含14.0至43.0重量％的镍（Ni）和钴（Co）中的至少一种 ，硅（Si）为3.0〜8.0重量％，钼（Mo）为20.0重量％以上。 还公开了一种耐磨合金，其包括上述硬钼合金作为增强相。

公开(公告)号：US5854434A

公开(公告)日：1998-12-29

申请号：US785087

申请日：1997-01-21

申请人： Takashi Saito ,  Kouji Tanaka

发明人： Takashi Saito ,  Kouji Tanaka

IPC分类号： C22C33/02 ,  B22F3/12 ,  C22C1/05

CPC分类号： C22C33/0292 ,  B22F2998/10

摘要： A high-modulus iron-based alloy containing at least one boride dispersed in an iron or iron-alloy matrix. The boride may be one of a Group IVa element, or a complex boride of at least one Group Va element and iron. A mixture of an iron or iron-alloy powder and a powder of at least one boride containing a Group IVa or Va element is compacted and sintered to make a shaped high-modulus iron-based alloy product.

摘要翻译： 含有分散在铁或铁合金基质中的至少一种硼化物的高模量铁基合金。 硼化物可以是IVa族元素或至少一种Va族元素和铁的复合硼化物之一。 铁或铁合金粉末与含有IVa或Va族元素的至少一种硼化物的粉末的混合物被压实并烧结以形成成形的高模量铁基合金产品。

公开(公告)号：US08670654B2

公开(公告)日：2014-03-11

申请号：US13879823

申请日：2011-10-13

申请人： Kouji Tanaka ,  Takashi Kiyofuji ,  Norio Kurashige

发明人： Kouji Tanaka ,  Takashi Kiyofuji ,  Norio Kurashige

IPC分类号： H04N5/917

CPC分类号： H04N19/00012 ,  H04N19/149 ,  H04N19/197 ,  H04N19/198 ,  H04N19/593

摘要： An image capturing device (100) is provided with: an image capturing unit (102) which generates, by continuous image capturing, a plurality of pieces of image data which are continuous in the time direction; an image processing unit which corrects a compression rate of the image data on the basis of a correction factor for correcting the image data, and performs compression coding by use of an intra-frame predictive coding system; a data control unit (124) which stores the image data, which has been subjected to the compression coding, in an image storage unit; a current compression rate derivation unit (130) which derives a current compression rate which is an actual compression rate of the image data which has been subjected to the compression coding; a current compression rate holding unit (132) which holds a plurality of current compression rates continuous in the time direction; a subsequent compression rate prediction unit (134) which predicts a subject compression rate, which is a compression rate of image data to be subjected to the subsequent compression coding next time, from the plurality of current compression rates which are held, or from the plurality of current compression rates which are held and the compression rate of the image data to be subjected to the current compression coding this time; and a correction factor derivation unit which derives the correction factor on the basis of the subsequent compression rate.

摘要翻译： 一种图像拍摄装置（100）具有：图像拍摄单元，通过连续图像捕获生成在时间方向上连续的多个图像数据; 图像处理单元，其基于用于校正图像数据的校正因子校正图像数据的压缩率，并且使用帧内预测编码系统进行压缩编码; 数据控制单元，其将经过压缩编码的图像数据存储在图像存储单元中; 当前压缩率导出单元（130），其导出作为已进行了压缩编码的图像数据的实际压缩率的当前压缩率; 当前压缩率保持单元（132），其保持在时间方向上连续的多个当前压缩率; 一个后续的压缩率预测单元（134），其从所保持的多个当前压缩率或从多个预定压缩率预测作为下一次压缩编码的图像数据的压缩率的对象压缩率 保持当前的压缩率以及本次要进行当前压缩编码的图像数据的压缩率; 以及校正因子导出单元，其基于随后的压缩率导出校正因子。

公开(公告)号：US20140051263A1

公开(公告)日：2014-02-20

申请号：US14113134

申请日：2012-04-23

申请人： Kouji Tanaka ,  Hirokazu Ueda

发明人： Kouji Tanaka ,  Hirokazu Ueda

IPC分类号： H01L21/316 ,  H01L21/318

CPC分类号： H01L21/316 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/511 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/318

摘要： This film forming method comprises: a first material gas supply step (A) wherein a first raw material gas is supplied over the substrate to be processed so that a first chemical adsorption layer, which is adsorbed on the substrate by means of the first raw material gas is formed on the substrate to be processed, a second material gas supply step (C) wherein a second raw material that is different from the first raw material gas is supplied over the substrate, on which the first chemical adsorption layer has been formed, so that a second chemical adsorption layer, which is adsorbed by means of the second raw material gas, is formed on the first chemical adsorption layer; and a plasma processing step (E) wherein a plasma processing is carried on at least the first and second chemical adsorption layers using microwave plasma.

摘要翻译： 该成膜方法包括：第一原料气体供给工序（A），其中第一原料气体供给到被处理基板上，使得通过第一原料吸附在基板上的第一化学吸附层 在被处理基板上形成气体，在其上形成有第一化学吸附层的基板上供给与第一原料气体不同的第二原料的第二原料气体供给工序（C） 使得通过第二原料气体吸附的第二化学吸附层形成在第一化学吸附层上; 和等离子体处理步骤（E），其中至少使用微波等离子体对第一和第二化学吸附层进行等离子体处理。

公开(公告)号：US08397921B2

公开(公告)日：2013-03-19

申请号：US12682626

申请日：2007-10-12

申请人： Hideo Utsunomiya ,  Takao Abe ,  Kouji Tanaka

发明人： Hideo Utsunomiya ,  Takao Abe ,  Kouji Tanaka

IPC分类号： B01D21/24

CPC分类号： C02F1/24 ,  B01D21/0084 ,  B01D21/04 ,  B01D21/2433 ,  B01D21/34 ,  C02F2301/066 ,  C02F2303/12

摘要： A spraying means is arranged on the scum-flowing wall surface side of wall surfaces forming a scum inlet of a scum discharging mechanism. The spraying means sprays pressured water upward along the wall surface on the scum-flowing side from when a part of the scum inlet is submerged in water until the scum begins to flow into the scum inlet. As a result, even large lumps of scum exceeding 10 cm in thickness (diameter) may be lead smoothly into a pipe by the pressured water, and the amount of discharged water accompanying scum discharge may be reduced to 1/20 to 1/30 than by a conventional scum removing apparatus.

摘要翻译： 在形成浮渣机构的浮渣入口的壁面的浮渣壁面侧设有喷涂装置。 从浮渣入口的一部分浸入水中直到浮渣开始流入浮渣入口时，喷雾装置沿着浮渣侧的壁表面向上喷射加压水。 结果，即使大于10cm厚的浮渣（直径）也可以通过加压水顺利地进入管道，并且伴随浮渣排出的排出水量可以减少到1/20至1/30的1/20至1/30 通过常规的浮渣除去装置。

公开(公告)号：US20120037407A1

公开(公告)日：2012-02-16

申请号：US13266269

申请日：2010-04-10

申请人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Kohei Watanuki ,  Kouji Tanaka

发明人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Kohei Watanuki ,  Kouji Tanaka

IPC分类号： H05K1/03 ,  C23C16/50 ,  B32B17/06 ,  C23C16/40

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  Y02E10/548

摘要： It has been found out that, among transparent conductive layers, a zinc oxide layer has a function of preventing diffusion of sodium. An electronic apparatus is obtained which uses the zinc oxide layer as an electrode of the electronic apparatus and also as a diffusion preventing layer for preventing diffusion of sodium from a glass substrate.

摘要翻译： 已经发现，在透明导电层中，氧化锌层具有防止钠扩散的功能。 获得使用氧化锌层作为电子设备的电极的电子设备，并且还用作防止钠从玻璃基板扩散的扩散防止层。

公开(公告)号：US20100275981A1

公开(公告)日：2010-11-04

申请号：US12809447

申请日：2008-12-12

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kouji Tanaka

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kouji Tanaka

IPC分类号： H01L31/04 ,  H01L31/18

CPC分类号： H01L31/18 ,  C23C16/24 ,  C23C16/511 ,  H01L31/028 ,  H01L31/04 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1816 ,  Y02E10/547 ,  Y02P70/521

摘要： An apparatus and method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber 10 which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit 40 which supplies plasma excitation gas to a plasma excitation region in the chamber 10, a pressure regulation unit 70 which regulates pressure in the chamber 10, a second gas supply unit 50 which supplies raw gas to a plasma diffusion region in the chamber 10, a microwave application unit 20 which applies microwaves into the chamber 10, and a bias voltage application unit 60 which selects and applies a substrate bias voltage to the substrate W according to the type of gas.

摘要翻译： 一种用于制造光电转换元件的装置和方法以及光电转换元件，该装置和方法能够高效地用微波等离子体形成膜，防止氧气混合，并减少缺陷数量。 本发明提供一种通过使用微波等离子体CVD在基板上形成半导体叠层膜的光电转换元件制造装置100。 该装置包括：腔室10，其是容纳基底的封闭空间，其上安装有用于薄膜形成的被检体基底;第一气体供给单元40，其向等离子体激发区域提供等离子体激发气体; 调节室10内的压力的压力调节单元70，向室10中的等离子体扩散区域供给原料气体的第二气体供给单元50，将微波施加到室10中的微波施加单元20以及偏置电压 应用单元60，其根据气体的类型选择并施加衬底偏置电压到衬底W.

公开(公告)号：US20090243044A1

公开(公告)日：2009-10-01

申请号：US12382540

申请日：2009-03-18

申请人： Kouji Tanaka ,  Seiya Isozaki

发明人： Kouji Tanaka ,  Seiya Isozaki

IPC分类号： H01L29/06 ,  H01L21/78

CPC分类号： H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor wafer with a scribe line region and a plurality of element forming regions partitioned by the scribe line region, the semiconductor wafer including: conductive patterns formed in the scribe line region; and an island-shaped passivation film formed above at least a conductive pattern, which is or may be exposed to a side surface of a semiconductor chip obtained by dicing the semiconductor wafer along the scribe line region, among the conductive patterns, so that the island-shaped passivation film is opposed to the conductive pattern.

摘要翻译： 本发明提供一种半导体晶片，其具有划线区域和由划线区域划分的多个元件形成区域，所述半导体晶片包括形成在划线区域中的导电图案; 以及形成在至少导电图案之上的岛状钝化膜，该导电图案在导电图案之中形成或可以暴露于通过沿着划线区域切割半导体晶片而获得的半导体芯片的侧表面，使得岛 形状的钝化膜与导电图案相对。

公开(公告)号：US07435360B2

公开(公告)日：2008-10-14

申请号：US10803880

申请日：2004-03-19

申请人： Kazuhiko Oda ,  Tetsuji Maruno ,  Akira Sasaki ,  Kouji Tanaka

发明人： Kazuhiko Oda ,  Tetsuji Maruno ,  Akira Sasaki ,  Kouji Tanaka

IPC分类号： H01B1/02 ,  H01G4/08 ,  B01F3/12 ,  B32B5/16

CPC分类号： H01G4/0085 ,  C22C1/1084 ,  H01B1/16 ,  H01B1/22 ,  Y10T428/2982 ,  Y10T428/2991

摘要： A manufacturing method of conductive paste comprising arranging process (S20 to S23) of ceramics particles, arranging process (S10 to S14) of wetted metal particles, forming process (S30) of slurry wherein metal particles and ceramics particles are mixed and dispersion treatment process (S32) by applying collision to the slurry. The arranging process of wetted metal particles comprises, a process (S12) of adding solvent, compatible with organic component in conductive paste and incompatible with water, to undried water washed metal particles, a process (S18) of adding surfactant, a process (S14) of separating water from the metal particles and a process (S15) of adding acetone or the other second solvent.

摘要翻译： 一种导电性糊剂的制造方法，其特征在于，包括配置陶瓷粒子的工序（S 20〜S 23），将润湿金属粒子的配置工序（S10〜S14），将金属粒子和陶瓷粒子混合的浆料的制造工序（S30） 和分散处理方法（S32）。 润湿金属颗粒的布置方法包括：向未干燥的水洗金属颗粒中加入与导电糊中的有机组分相容的与水不相容的溶剂的方法（S 12），添加表面活性剂的方法（S18） （S14）和将丙酮或其它第二溶剂加入的方法（S15）。