公开(公告)号：US20140051263A1

公开(公告)日：2014-02-20

申请号：US14113134

申请日：2012-04-23

申请人： Kouji Tanaka ,  Hirokazu Ueda

发明人： Kouji Tanaka ,  Hirokazu Ueda

IPC分类号： H01L21/316 ,  H01L21/318

CPC分类号： H01L21/316 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/511 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/318

摘要： This film forming method comprises: a first material gas supply step (A) wherein a first raw material gas is supplied over the substrate to be processed so that a first chemical adsorption layer, which is adsorbed on the substrate by means of the first raw material gas is formed on the substrate to be processed, a second material gas supply step (C) wherein a second raw material that is different from the first raw material gas is supplied over the substrate, on which the first chemical adsorption layer has been formed, so that a second chemical adsorption layer, which is adsorbed by means of the second raw material gas, is formed on the first chemical adsorption layer; and a plasma processing step (E) wherein a plasma processing is carried on at least the first and second chemical adsorption layers using microwave plasma.

摘要翻译： 该成膜方法包括：第一原料气体供给工序（A），其中第一原料气体供给到被处理基板上，使得通过第一原料吸附在基板上的第一化学吸附层 在被处理基板上形成气体，在其上形成有第一化学吸附层的基板上供给与第一原料气体不同的第二原料的第二原料气体供给工序（C） 使得通过第二原料气体吸附的第二化学吸附层形成在第一化学吸附层上; 和等离子体处理步骤（E），其中至少使用微波等离子体对第一和第二化学吸附层进行等离子体处理。

公开(公告)号：US09034774B2

公开(公告)日：2015-05-19

申请号：US14113134

申请日：2012-04-23

申请人： Kouji Tanaka ,  Hirokazu Ueda

发明人： Kouji Tanaka ,  Hirokazu Ueda

IPC分类号： H01L21/31 ,  H01L21/316 ,  C23C16/34 ,  C23C16/455 ,  C23C16/511 ,  H01L21/02 ,  H01L21/318

CPC分类号： H01L21/316 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/511 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/318

摘要： This film forming method comprises: a first material gas supply step (A) wherein a first raw material gas is supplied over the substrate to be processed so that a first chemical adsorption layer, which is adsorbed on the substrate by means of the first raw material gas is formed on the substrate to be processed, a second material gas supply step (C) wherein a second raw material that is different from the first raw material gas is supplied over the substrate, on which the first chemical adsorption layer has been formed, so that a second chemical adsorption layer, which is adsorbed by means of the second raw material gas, is formed on the first chemical adsorption layer; and a plasma processing step (E) wherein a plasma processing is carried on at least the first and second chemical adsorption layers using microwave plasma.

摘要翻译： 该成膜方法包括：第一原料气体供给工序（A），其中第一原料气体供给到被处理基板上，使得通过第一原料吸附在基板上的第一化学吸附层 在被处理基板上形成气体，在其上形成有第一化学吸附层的基板上供给与第一原料气体不同的第二原料的第二原料气体供给工序（C） 使得通过第二原料气体吸附的第二化学吸附层形成在第一化学吸附层上; 和等离子体处理步骤（E），其中至少使用微波等离子体对第一和第二化学吸附层进行等离子体处理。

公开(公告)号：US08497214B2

公开(公告)日：2013-07-30

申请号：US12675289

申请日：2008-08-07

申请人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/302

CPC分类号： H01L21/02164 ,  C23C16/511 ,  H01J37/32192 ,  H01L21/02274 ,  H01L21/31055 ,  H01L21/31116

摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.

摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜 半导体衬底的表面。

公开(公告)号：US08486792B2

公开(公告)日：2013-07-16

申请号：US12992209

申请日：2009-05-11

申请人： Hirokazu Ueda ,  Yoshinobu Tanaka ,  Yusuke Ohsawa ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Hirokazu Ueda ,  Yoshinobu Tanaka ,  Yusuke Ohsawa ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L21/302

CPC分类号： H01L21/76224 ,  C23C16/402 ,  C23C16/511 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/28273 ,  H01L21/31612

摘要： A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber (2) of a plasma processing apparatus (1). A microwave is supplied into the chamber (2), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.

摘要翻译： 将硅化合物气体，氧化气体和稀有气体供给到等离子体处理装置（1）的室（2）中。 微波供应到室（2）中，并且在目标衬底上用微波产生的等离子体形成氧化硅膜。 稀有气体的分压比为硅化合物气体，氧化气体和稀有气体的总气体压力的10％以上，硅化合物气体和氧化气体的有效流量比（氧化气体 /硅化合物气体）不小于3但不大于11。

公开(公告)号：US20080181025A1

公开(公告)日：2008-07-31

申请号：US12077852

申请日：2008-03-21

申请人： Hirokazu Ueda

发明人： Hirokazu Ueda

IPC分类号： G11C7/00

CPC分类号： G11C8/08 ,  G11C11/4085 ,  G11C11/413

摘要： Word line driver circuitry for selectively charging and discharging one or more word lines is provided. The driver circuitry uses a dual transistor topology, where a first transistor is driven by a signal, DOUT, and a second transistor is driven by a time-delayed complement of the DOUT, DOUT_BAR. The time delay prevents DOUT_BAR from changing its state immediately after DOUT changes state. As result, both the first and second transistors are turned ON at the same time for a predetermined of time. It is during this time that the voltage on the word line is rapidly driven to a LOW voltage. When the second transistor turns OFF, high impedance circuitry limits the flow of leakage current. This minimizes leakage current when the word line is OFF and when short circuit conditions are present between two or more word lines or between a word line and a bit line.

公开(公告)号：US20110074013A1

公开(公告)日：2011-03-31

申请号：US12992209

申请日：2009-05-11

申请人： Hirokazu Ueda ,  Yoshinobu Tanaka ,  Yusuke Ohsawa ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Hirokazu Ueda ,  Yoshinobu Tanaka ,  Yusuke Ohsawa ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/31 ,  C01B33/113 ,  H01L23/48

CPC分类号： H01L21/76224 ,  C23C16/402 ,  C23C16/511 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/28273 ,  H01L21/31612

摘要： A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber (2) of a plasma processing apparatus (1). A microwave is supplied into the chamber (2), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.

摘要翻译： 将硅化合物气体，氧化气体和稀有气体供给到等离子体处理装置（1）的室（2）中。 微波供应到室（2）中，并且在目标衬底上用微波产生的等离子体形成氧化硅膜。 稀有气体的分压比为硅化合物气体，氧化气体和稀有气体的总气体压力的10％以上，硅化合物气体和氧化气体的有效流量比（氧化气体 /硅化合物气体）不小于3但不大于11。

公开(公告)号：US5218330A

公开(公告)日：1993-06-08

申请号：US701112

申请日：1991-05-17

申请人： Kenzi Omiya ,  Hideo Sugawara ,  Hiroshi Suzuki ,  Hirokazu Ueda

发明人： Kenzi Omiya ,  Hideo Sugawara ,  Hiroshi Suzuki ,  Hirokazu Ueda

IPC分类号： H01P7/04

CPC分类号： H01P7/04

摘要： A dielectric TEM resonator, whose resonant frequency is adjustable in both directions after being incorporated in a circuit, is disclosed. A first dielectric TEM resonator comprises a metal member disposed near an open end of a resonator body and coupled to an inner or outer conductor of the resonator body. The resonant frequency is adjusted by adjusting a distance between the open end and the metal member. A dielectric material of a second dielectric TEM resonator is partially exposed, and a dielectric board for mounting the resonator body is also exposed in a corresponding part to the exposed part of the dielectric material. The exposed part of the dielectric board is partially covered with a metal plate. The resonant frequency is adjusted by adjusting the covered area.

摘要翻译： 公开了一种电介质TEM谐振器，其谐振频率在并入电路之后在两个方向上可调节。 第一电介质TEM谐振器包括设置在谐振器本体的开口端附近并耦合到谐振器本体的内导体或外导体的金属构件。 通过调整开口端和金属构件之间的距离来调节谐振频率。 第二电介质TEM谐振器的电介质材料被部分地暴露，并且用于安装谐振器体的电介质板也暴露在介电材料的暴露部分的对应部分中。 电介质板的暴露部分被金属板部分覆盖。 通过调整覆盖面积来调节谐振频率。

公开(公告)号：US5196066A

公开(公告)日：1993-03-23

申请号：US783416

申请日：1991-10-28

申请人： Motoo Kusuda ,  Hirokazu Ueda ,  Hitoshi Masuda

发明人： Motoo Kusuda ,  Hirokazu Ueda ,  Hitoshi Masuda

IPC分类号： B22C23/02 ,  B05B9/04 ,  B05B13/00 ,  B05B15/00

CPC分类号： B05B15/003 ,  B05B9/0403

摘要： A facing material spray apparatus including a first tank for housing a facing material and regulating its concentration, first agitating means for agitating the facing material in the first tank, a second tank, for receiving the facing material from the first tank, provided in the vicinity of the first tank with its bottom positioned below the bottom of the first tank, second agitating means for agitating the facing material in the second tank, a connecting pipe for connecting the first and second tanks to each other and causing the facing material in the first tank to naturally flow into the second tank, a valve attached to the connecting pipe for opening and closing a facing material supply passage, a facing pump removably attached to the second tank for sucking the facing material in the second tank, a nozzle attached to the facing pump through a hose for spraying the sucked facing material on a mold, and a facing material receiving base provided in the vicinity of the second tank for receiving the facing material sprayed on the mold and recovering the received facing material to the second tank by virtue of its natural flow.

摘要翻译： 一种面向材料喷涂装置，包括用于容纳面料并调节其浓度的第一罐，用于搅拌第一罐中的面料的第一搅拌装置，用于接收来自第一罐的面向材料的第二罐，设置在附近 所述第一罐的底部位于所述第一罐的底部下方的第二搅拌装置，用于搅拌所述第二罐中的所述面料的第二搅拌装置，用于将所述第一罐和所述第二罐相互连接并使所述第一罐中的所述面材料 罐自然流入第二罐，附接到连接管的阀，用于打开和关闭面向材料供给通道;可拆卸地附接到第二罐的面对泵，用于吸入第二罐中的面料，附接到第二罐的喷嘴 通过软管将吸入的面料材料喷射到模具上，以及设置在第二罐体f附近的面对材料容纳基座 或接收喷射在模具上的面料，并且通过其自然流动将接收到的面材料回收到第二罐。

公开(公告)号：US5166088A

公开(公告)日：1992-11-24

申请号：US719737

申请日：1991-06-25

申请人： Hirokazu Ueda ,  Hirotoshi Kawahira

发明人： Hirokazu Ueda ,  Hirotoshi Kawahira

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S148/136 ,  Y10S438/97

摘要： A method of manufacturing a semiconductor device, includes the steps of: forming a first insulating layer (3), having at a surface thereof a concave area to which a contact hole is to be formed and a convex area, on a semiconductor substrate (7); forming a high resistance portion (4) including polycrystalline silicon, on the convex area; and forming a protection layer (2) including SiN on the first insulating layer and the high resistance portion. The method also includes the steps of: removing a portion of the formed protection layer at the concave area such that the removed portion includes an area to form the contact hole and is larger than the area to form the contact hole; and forming a second insulating layer (5) including at least boron as an impurity on the protection layer and the first insulating layer. The method further includes the steps of: forming the contact hole at the concave area from the second insulating layer to a surface of the semiconductor substrate by means of an etching technique; and forming a metal wiring (6) in the contact hole and on the second insulating layer.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底（7）上形成第一绝缘层（3），在其表面具有形成有接触孔的凹面积和凸区域 ）; 在所述凸区域上形成包括多晶硅的高电阻部分（4）; 以及在所述第一绝缘层和所述高电阻部分上形成包括SiN的保护层（2）。 该方法还包括以下步骤：在凹入区域移除形成的保护层的一部分，使得去除部分包括形成接触孔的区域，并且大于形成接触孔的区域; 以及在所述保护层和所述第一绝缘层上形成至少包含作为杂质的硼的第二绝缘层（5）。 该方法还包括以下步骤：通过蚀刻技术在第二绝缘层的凹陷区域形成接触孔到半导体衬底的表面; 以及在所述接触孔和所述第二绝缘层上形成金属布线（6）。

公开(公告)号：US20130292700A1

公开(公告)日：2013-11-07

申请号：US13981048

申请日：2012-01-23

申请人： Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

发明人： Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

IPC分类号： H01L29/20 ,  H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

摘要翻译： 一种制造半导体器件的方法，该半导体器件包括构成半导体层并包括形成栅极绝缘膜的GaN（氮化镓），其中在氮化物层上形成选自SiO 2膜和Al 2 O 3膜中的至少一种膜 通过使用微波等离子体形成含GaN的GaN，并且将形成的膜用作栅极绝缘膜的至少一部分。