Microwave amplifier
    1.
    发明授权
    Microwave amplifier 失效
    微波放大器

    公开(公告)号:US06310517B1

    公开(公告)日:2001-10-30

    申请号:US09447041

    申请日:1999-11-23

    IPC分类号: H03F316

    摘要: A microwave amplifier (10) of the present invention contains such an arrangement that both an inductor (12) and a resistor (13) are loaded in a parallel manner between a source electrode of a field-effect transistor (11) and the ground. Since the inductor (12) has a stray capacitance component (B), the inductor (12) is resonated at a resonant frequency “f0”. However, since the source electrode of the field-effect transistor (11) is grounded via a resistor (13) connected in parallel to the inductor (12), even when the inductor (12) is opened due to a resonant operation, the field-effect transistor (11) is operated under normal condition. As a result, the operation of the microwave amplifier (10) is stabilized.

    摘要翻译: 本发明的微波放大器(10)具有这样一种布置,使电感器(12)和电阻器(13)以并联的方式加载在场效应晶体管(11)的源电极和地之间。 由于电感器(12)具有杂散电容分量(B),电感器(12)以共振频率“f0”谐振。 然而,由于场效应晶体管(11)的源电极通过并联连接到电感器(12)的电阻器(13)接地,所以即使当由于谐振操作使电感器(12)打开时,场 晶体管(11)在正常条件下工作。 结果,微波放大器(10)的工作稳定。

    Loaded line phase shifter
    3.
    发明授权
    Loaded line phase shifter 失效
    负载线移相器

    公开(公告)号:US5032806A

    公开(公告)日:1991-07-16

    申请号:US496912

    申请日:1990-03-21

    申请人: Kazuhiko Nakahara

    发明人: Kazuhiko Nakahara

    IPC分类号: H01P1/185

    CPC分类号: H01P1/185

    摘要: A loaded line phase shifter using striplines diposed on a semiconductor substrate includes a main stripline having an electrical length of one-half wavelength, loaded striplines connected to respective ends of the main stripline, a field effect transistor having its source electrode and its drain electrode connected to the respective load lines, a bias circuit connected to the gate electrode of the field effect transistor for controlling the bias voltage applied to the gate electrode, and a resonant stripline connected between the source electrode and the drain electrode.

    Flame-retardant adhesive resin composition and adhesive film using the same
    4.
    发明授权
    Flame-retardant adhesive resin composition and adhesive film using the same 有权
    阻燃粘合剂树脂组合物和使用其的粘合膜

    公开(公告)号:US08268940B2

    公开(公告)日:2012-09-18

    申请号:US12530152

    申请日:2008-03-06

    摘要: Disclosed is a halogen- and phosphorus-free flame-retardant adhesive resin composition which can be used in heat contact bonding of adherends at or below 250° C. and is excellent in heat resistance, solder heat resistance after moisture absorption, and processability. Also disclosed is an adhesive film produced from said composition. The flame-retardant adhesive resin composition comprises 65-98% by weight of a silicone unit-containing polyimide resin and 2-35% by weight of an epoxy resin having an acenaphthylene-substituted naphthalene skeleton. The adhesive film produced from the flame-retardant adhesive resin composition is suitable as an adhesive for a laminate for a multiplayer printed circuit board substrate, an adhesive for a hybrid circuit board substrate, and an adhesive for a coverlay film.

    摘要翻译: 公开了一种无卤阻燃粘合树脂组合物,其可用于250℃以下的被粘物的热接触粘合,耐热性,吸湿后的耐焊锡性,加工性优异。 还公开了由所述组合物制备的粘合膜。 阻燃性粘合剂树脂组合物包含65-98重量%的含硅氧烷单元的聚酰亚胺树脂和2-35重量%的具有苊烯取代的萘骨架的环氧树脂。 由阻燃粘合树脂组合物制成的粘合膜适用于多层印刷电路板基板,混合电路板基板用粘合剂和覆盖膜用粘合剂的粘合剂。

    CRYSTALLINE RESIN CURED PRODUCT, CRYSTALLINE RESIN COMPOSITE MATERIAL, AND METHOD FOR PRODUCING THE SAME
    5.
    发明申请
    CRYSTALLINE RESIN CURED PRODUCT, CRYSTALLINE RESIN COMPOSITE MATERIAL, AND METHOD FOR PRODUCING THE SAME 失效
    结晶树脂固化产品,结晶树脂复合材料及其制造方法

    公开(公告)号:US20100016473A1

    公开(公告)日:2010-01-21

    申请号:US12312369

    申请日:2007-11-08

    IPC分类号: C08L63/00 C08G59/06

    摘要: Provided are a crystalline resin cured product which shows high thermal conductivity, low thermal expansion, high heat resistance, low moisture absorption, and good gas barrier properties and a crystalline resin composite material produced therefrom. Further provided is a method for producing the crystalline resin cured product and the crystalline resin composite material. The crystalline resin cured product is obtained by the reaction of an aromatic diglycidyl compound or a diglycidyl resin with an aromatic dihydroxy compound or with a dihydroxy resin and it shows a heat of melting of 10 J/g or more in differential thermal analysis while the endothermic peak corresponding to the melting appears in the range of 120 to 320° C. The crystalline resin composite material is obtained by combining the crystalline resin cured product with a filler or a base material. The crystalline resin cured product has a unit represented by -A-O—CH2—CH(OH)—CH2—O—B—, wherein A and B are divalent aromatic groups.

    摘要翻译: 提供一种显示出高导热性,低热膨胀,高耐热性,低吸湿性和良好阻气性的结晶树脂固化产物和由其制备的结晶树脂复合材料。 另外提供了结晶性树脂固化物和结晶性树脂复合材料的制造方法。 结晶性树脂固化物通过芳香族二缩水甘油基化合物或二缩水甘油基树脂与芳香族二羟基化合物或二羟基树脂的反应而得到,并且在差热分析中显示出10J / g以上的熔融热,同时吸热 对应于熔化的峰出现在120〜320℃的范围内。结晶性树脂复合材料通过将结晶性树脂固化物与填料或基材结合而得到。 结晶性树脂固化物具有由-A-O-CH 2 -CH(OH)-CH 2 -O-B-表示的单元,其中A和B是二价芳族基团。

    Variable attenuation microwave attenuator
    7.
    发明授权
    Variable attenuation microwave attenuator 失效
    可变衰减微波衰减器

    公开(公告)号:US5502421A

    公开(公告)日:1996-03-26

    申请号:US409043

    申请日:1995-03-23

    申请人: Kazuhiko Nakahara

    发明人: Kazuhiko Nakahara

    CPC分类号: H03H11/245

    摘要: A variable attenuation microwave attenuator includes input and output terminals, a high-pass filter having an electrical length of 90.degree. and transmitting signals with frequencies higher than a cut-off frequency, a first variable resistor connected between the input terminal and an input end of the high-pass filter, and a second variable resistor connected between an output end of the high-pass filter and the output terminal, wherein input signals applied to the input terminal are attenuated by the first and second variable resistors before and after the high-pass filter. Therefore, the variable attenuator can be a lumped parameter circuit, i.e., the high-pass filter including two inductors and a capacitor, without using a transmission line as in the prior art device, so that the size of the device is significantly reduced. Further, since the resistance values of the first and second variable resistors do not change discretely but change continuously, a lot of different values of attenuation can be obtained with high precision. As a result, the gain (attenuation amount) can be controlled with high precision.

    摘要翻译: 可变衰减微波衰减器包括输入和输出端子,电气长度为90度的高通滤波器和传输频率高于截止频率的信号;第一可变电阻器,连接在输入端子和输入端子的输入端之间 高通滤波器和连接在高通滤波器的输出端和输出端之间的第二可变电阻器,其中施加到输入端子的输入信号由高频滤波器之前和之后的第一和第二可变电阻器衰减, 通过滤波器。 因此,可变衰减器可以是集中参数电路,即包括两个电感器和电容器的高通滤波器,而不使用如现有技术的器件中的传输线,使得器件的尺寸显着降低。 此外,由于第一和第二可变电阻器的电阻值不是离散地改变而是连续变化,所以可以以高精度获得大量不同的衰减值。 结果,可以高精度地控制增益(衰减量)。

    Microwave switch circuit and an antenna apparatus
    8.
    发明授权
    Microwave switch circuit and an antenna apparatus 失效
    微波开关电路和天线装置

    公开(公告)号:US5485130A

    公开(公告)日:1996-01-16

    申请号:US378876

    申请日:1995-01-24

    IPC分类号: H01P1/15 H01P5/02

    CPC分类号: H01P1/15

    摘要: A microwave switch circuit includes a first impedance conversion circuit, one end of which is connected to an input terminal; a resonance circuit connected between an output of the first impedance conversion circuit and ground and including a parallel connection of a field effect transistor and a resonance inductor; and a second impedance conversion circuit connected between the output of the first impedance conversion circuit and an output terminal. One microwave switch circuit may be connected between an antenna terminal and a signal input terminal and another microwave switch circuit may be connected between the antenna terminal and a signal receiving terminal. The microwave switch circuit output terminal and input terminal may have an impedance of 50 .OMEGA. and the output of the first impedance conversion circuit may have an impedance lower than 50 .OMEGA.. The microwave switch circuit may include one-fourth wavelength transmission lines as the first and second impedance conversion circuits. Consequently, the maximum allowable value of the incident power is increased and withstand power is increased in an antenna switch circuit.

    摘要翻译: 微波开关电路包括第一阻抗转换电路,其一端连接到输入端; 连接在所述第一阻抗转换电路的输出和地之间并包括场效应晶体管和谐振电感器的并联连接的谐振电路; 以及连接在第一阻抗转换电路的输出端和输出端子之间的第二阻抗变换电路。 一个微波开关电路可以连接在天线端子和信号输入端子之间,另一个微波开关电路可以连接在天线端子和信号接收端子之间。 微波开关电路输出端子和输入端子的阻抗可以为50欧姆,第一阻抗转换电路的输出阻抗可能低于50欧姆。 微波开关电路可以包括作为第一和第二阻抗转换电路的四分之一波长传输线。 因此,在天线开关电路中,入射功率的最大允许值增加并且耐受功率增加。

    Inductive structures for semiconductor integrated circuits
    9.
    发明授权
    Inductive structures for semiconductor integrated circuits 失效
    半导体集成电路的电感结构

    公开(公告)号:US5095357A

    公开(公告)日:1992-03-10

    申请号:US567170

    申请日:1990-08-14

    摘要: Inductive structures having low parasitic capacitances for direct integration in semiconductor integrated circuits. In one embodiment, a generally planar spiral winding is disposed on the surface of a substrate. An electrical connection to the internal end of the spiral is made through electrically conducting vias passing through the substrate. The spiral may be spaced from a substrate surface by a plurality of spaced apart electrically conductive posts having a staggered arrangement between adjacent windings of the spiral. A transformer includes two windings disposed on top of each other on a semiconductor substrate and separated by an electrically insulating film. The windings have a common central opening in which a magnetic material is disposed to improve the inductive coupling between the windings. The transformer may include two helical windings, one surrounding another, each formed with vias and electrical conductors, the inner winding being formed in and on a semiconductor substrate and the outer winding being formed on insulating films disposed on the substrate and extending through the films and substrate. A variable inductor includes inductively coupled spiral windings separated by an insulating film and a current control for controlling the current through one of the spirals and, thereby, the effective inductance of the other spiral.

    Method of producing an MMIC and the integrated circuit produced thereby
    10.
    发明授权
    Method of producing an MMIC and the integrated circuit produced thereby 失效
    制造MMIC的方法和由此产生的集成电路

    公开(公告)号:US4990973A

    公开(公告)日:1991-02-05

    申请号:US436615

    申请日:1989-11-15

    CPC分类号: H01L27/0605 H03F1/306

    摘要: A method of producing MMIC's and the MMIC thus produced having a reproducible quiescent operating point from lot to lot under the same bias conditions. The source to drain saturation current of the amplifier MESFET in the MMIC can vary from lot to lot if the depth of the gate recess varies from lot to lot. As a result, the quiescent operating point of the amplifier under the same bias conditions can vary from lot to lot. A compensated gate bias source, preferably in the form of an extra MESFET on the MMIC, is fabricated at the same time as the amplifier MESFET and thus has a gate recess having a depth which precisely matches that of the amplifier MESFET. The extra MESFET is connected as a compensated gate bias source and has a resistance which is a function of the depth of the gate recess and thus compensates the quiescent operating point of the amplifier MESFET.