摘要:
A microwave amplifier (10) of the present invention contains such an arrangement that both an inductor (12) and a resistor (13) are loaded in a parallel manner between a source electrode of a field-effect transistor (11) and the ground. Since the inductor (12) has a stray capacitance component (B), the inductor (12) is resonated at a resonant frequency “f0”. However, since the source electrode of the field-effect transistor (11) is grounded via a resistor (13) connected in parallel to the inductor (12), even when the inductor (12) is opened due to a resonant operation, the field-effect transistor (11) is operated under normal condition. As a result, the operation of the microwave amplifier (10) is stabilized.
摘要:
A nitrification inhibitor and a soil improver and a fertilizer containing the same are offered which can be utilized in a wide area from a tropical to a temperate zone, and can be easily obtained from natural origin materials. It is a nitrification inhibitor to inhibit soil nitrification, containing as a main component either one of linoleic acid, α-linolenic acid, γ-linolenic acid, and methyl linoleate, or their mixture of two or more. By incorporating this nitrification inhibitor into a soil improver or a fertilizer, nitrification of soil can be effectively inhibited.
摘要:
A loaded line phase shifter using striplines diposed on a semiconductor substrate includes a main stripline having an electrical length of one-half wavelength, loaded striplines connected to respective ends of the main stripline, a field effect transistor having its source electrode and its drain electrode connected to the respective load lines, a bias circuit connected to the gate electrode of the field effect transistor for controlling the bias voltage applied to the gate electrode, and a resonant stripline connected between the source electrode and the drain electrode.
摘要:
Disclosed is a halogen- and phosphorus-free flame-retardant adhesive resin composition which can be used in heat contact bonding of adherends at or below 250° C. and is excellent in heat resistance, solder heat resistance after moisture absorption, and processability. Also disclosed is an adhesive film produced from said composition. The flame-retardant adhesive resin composition comprises 65-98% by weight of a silicone unit-containing polyimide resin and 2-35% by weight of an epoxy resin having an acenaphthylene-substituted naphthalene skeleton. The adhesive film produced from the flame-retardant adhesive resin composition is suitable as an adhesive for a laminate for a multiplayer printed circuit board substrate, an adhesive for a hybrid circuit board substrate, and an adhesive for a coverlay film.
摘要:
Provided are a crystalline resin cured product which shows high thermal conductivity, low thermal expansion, high heat resistance, low moisture absorption, and good gas barrier properties and a crystalline resin composite material produced therefrom. Further provided is a method for producing the crystalline resin cured product and the crystalline resin composite material. The crystalline resin cured product is obtained by the reaction of an aromatic diglycidyl compound or a diglycidyl resin with an aromatic dihydroxy compound or with a dihydroxy resin and it shows a heat of melting of 10 J/g or more in differential thermal analysis while the endothermic peak corresponding to the melting appears in the range of 120 to 320° C. The crystalline resin composite material is obtained by combining the crystalline resin cured product with a filler or a base material. The crystalline resin cured product has a unit represented by -A-O—CH2—CH(OH)—CH2—O—B—, wherein A and B are divalent aromatic groups.
摘要:
According to the present invention, mounting conditions are determined to become closer to a setting value of a parameter regarding electricity consumption. The present invention provides a method of determining mounting conditions under which a piece of equipment mounts a component onto a substrate. The method includes: obtaining a setting value of a parameter regarding electricity consumption required to mount the component; obtaining an actual value of the parameter based on current mounting conditions; and determining new mounting conditions based on a result of comparing the setting value with the actual value.
摘要:
A variable attenuation microwave attenuator includes input and output terminals, a high-pass filter having an electrical length of 90.degree. and transmitting signals with frequencies higher than a cut-off frequency, a first variable resistor connected between the input terminal and an input end of the high-pass filter, and a second variable resistor connected between an output end of the high-pass filter and the output terminal, wherein input signals applied to the input terminal are attenuated by the first and second variable resistors before and after the high-pass filter. Therefore, the variable attenuator can be a lumped parameter circuit, i.e., the high-pass filter including two inductors and a capacitor, without using a transmission line as in the prior art device, so that the size of the device is significantly reduced. Further, since the resistance values of the first and second variable resistors do not change discretely but change continuously, a lot of different values of attenuation can be obtained with high precision. As a result, the gain (attenuation amount) can be controlled with high precision.
摘要:
A microwave switch circuit includes a first impedance conversion circuit, one end of which is connected to an input terminal; a resonance circuit connected between an output of the first impedance conversion circuit and ground and including a parallel connection of a field effect transistor and a resonance inductor; and a second impedance conversion circuit connected between the output of the first impedance conversion circuit and an output terminal. One microwave switch circuit may be connected between an antenna terminal and a signal input terminal and another microwave switch circuit may be connected between the antenna terminal and a signal receiving terminal. The microwave switch circuit output terminal and input terminal may have an impedance of 50 .OMEGA. and the output of the first impedance conversion circuit may have an impedance lower than 50 .OMEGA.. The microwave switch circuit may include one-fourth wavelength transmission lines as the first and second impedance conversion circuits. Consequently, the maximum allowable value of the incident power is increased and withstand power is increased in an antenna switch circuit.
摘要:
Inductive structures having low parasitic capacitances for direct integration in semiconductor integrated circuits. In one embodiment, a generally planar spiral winding is disposed on the surface of a substrate. An electrical connection to the internal end of the spiral is made through electrically conducting vias passing through the substrate. The spiral may be spaced from a substrate surface by a plurality of spaced apart electrically conductive posts having a staggered arrangement between adjacent windings of the spiral. A transformer includes two windings disposed on top of each other on a semiconductor substrate and separated by an electrically insulating film. The windings have a common central opening in which a magnetic material is disposed to improve the inductive coupling between the windings. The transformer may include two helical windings, one surrounding another, each formed with vias and electrical conductors, the inner winding being formed in and on a semiconductor substrate and the outer winding being formed on insulating films disposed on the substrate and extending through the films and substrate. A variable inductor includes inductively coupled spiral windings separated by an insulating film and a current control for controlling the current through one of the spirals and, thereby, the effective inductance of the other spiral.
摘要:
A method of producing MMIC's and the MMIC thus produced having a reproducible quiescent operating point from lot to lot under the same bias conditions. The source to drain saturation current of the amplifier MESFET in the MMIC can vary from lot to lot if the depth of the gate recess varies from lot to lot. As a result, the quiescent operating point of the amplifier under the same bias conditions can vary from lot to lot. A compensated gate bias source, preferably in the form of an extra MESFET on the MMIC, is fabricated at the same time as the amplifier MESFET and thus has a gate recess having a depth which precisely matches that of the amplifier MESFET. The extra MESFET is connected as a compensated gate bias source and has a resistance which is a function of the depth of the gate recess and thus compensates the quiescent operating point of the amplifier MESFET.