摘要:
A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.
摘要:
A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.
摘要:
A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.
摘要:
In one exemplary embodiment, a method includes: forming at least one first monolayer of first material on a surface of a substrate by performing a first plurality of cycles of atomic layer deposition; thereafter, annealing the formed at least one first monolayer of first material under a first inert atmosphere at a first temperature between about 650° C. and about 900° C.; thereafter, forming at least one second monolayer of second material by performing a second plurality of cycles of atomic layer deposition, where the formed at least one second monolayer of second material at least partially overlies the annealed at least one first monolayer of first material; and thereafter, annealing the formed at least one second monolayer of second material under a second inert atmosphere at a second temperature between about 650° C. and about 900° C.
摘要:
A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.
摘要:
In one exemplary embodiment, a method includes: forming at least one first monolayer of first material on a surface of a substrate by performing a first plurality of cycles of atomic layer deposition; thereafter, annealing the formed at least one first monolayer of first material under a first inert atmosphere at a first temperature between about 650° C. and about 900° C.; thereafter, forming at least one second monolayer of second material by performing a second plurality of cycles of atomic layer deposition, where the formed at least one second monolayer of second material at least partially overlies the annealed at least one first monolayer of first material; and thereafter, annealing the formed at least one second monolayer of second material under a second inert atmosphere at a second temperature between about 650° C. and about 900° C.
摘要:
A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack.
摘要:
A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack.
摘要:
A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electromagnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.
摘要:
A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.