公开(公告)号：US4580522A

公开(公告)日：1986-04-08

申请号：US706184

申请日：1985-02-27

申请人： Kazumasa Fujioka ,  Sumio Okuno ,  Muneo Mizumoto ,  Hideaki Kamohara ,  Shinjiro Ueda ,  Takao Kuroda ,  Sumio Yamaguchi ,  Naoyuki Tamura

发明人： Kazumasa Fujioka ,  Sumio Okuno ,  Muneo Mizumoto ,  Hideaki Kamohara ,  Shinjiro Ueda ,  Takao Kuroda ,  Sumio Yamaguchi ,  Naoyuki Tamura

IPC分类号： H01L21/203 ,  C30B23/06 ,  C30B23/08 ,  B05C13/00

CPC分类号： C30B23/063

摘要： A rotary substrate holder of a molecular beam epitaxy apparatus including leads-cum-posts serving both as leads for passing a current to a heater for heating a substrate and as posts for supporting the heater. By this arrangement, heat transferred from the heater to a bearing disposed in the vicinity of the heater is minimized in amount, thereby prolonging the service life of the holder and minimizing a heat loss thereof.

摘要翻译： 分子束外延装置的旋转衬底保持器，其包括用作将电流传递到用于加热衬底的加热器的引线的辅助柱和用于支撑加热器的柱。 通过这种布置，从加热器传递到设置在加热器附近的轴承的热量最小化，从而延长保持器的使用寿命并最小化其热损失。

公开(公告)号：US20080012048A1

公开(公告)日：2008-01-17

申请号：US11570658

申请日：2005-12-14

申请人： Takao Kuroda

发明人： Takao Kuroda

IPC分类号： H01L27/148 ,  H01L21/339 ,  H01L29/76

CPC分类号： H01L27/14689 ,  H01L27/14806 ,  H01L29/76833

摘要： In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.

摘要翻译： 在包括通过绝缘层3设置在半导体衬底1上的转移电极2a至2c的结构的半导体器件10中，具有第一导电类型的第一半导体区域4，导电类型的第二半导体区域5 第一导电类型的第三半导体区域6以及直接位于转移电极2a至2c下方的与半导体衬底1的区域重叠的位置。 第二半导体区域5形成在第一半导体区域4上。 第三半导体区域6形成在第二半导体区域5上，使得当第三半导体区域6被耗尽时第二半导体区域5的电位的最大点8的位置比第三半导体区域5的第三半导体区域5的最大点8的位置更深 半导体区域6不存在。

公开(公告)号：US20060119725A1

公开(公告)日：2006-06-08

申请号：US11332885

申请日：2006-01-17

申请人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

发明人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

IPC分类号： H04N5/335

CPC分类号： H04N5/3728 ,  H04N5/357 ,  H04N5/3597

摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

摘要翻译： 在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。 可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。 本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤， 低电压至至少一个电极41,45-47，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压， 施加高电压。

公开(公告)号：US5837565A

公开(公告)日：1998-11-17

申请号：US450621

申请日：1995-05-25

申请人： Takao Kuroda ,  Yasuhiro Shiraki

发明人： Takao Kuroda ,  Yasuhiro Shiraki

IPC分类号： H01L29/812 ,  H01L21/20 ,  H01L21/338 ,  H01L29/201 ,  H01L29/205 ,  H01L29/778 ,  H01L29/80

CPC分类号： H01L29/205 ,  H01L29/7783 ,  Y10S438/938

摘要： Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.

公开(公告)号：US5451802A

公开(公告)日：1995-09-19

申请号：US145347

申请日：1993-10-29

申请人： Hiroyoshi Komobuchi ,  Takao Kuroda

发明人： Hiroyoshi Komobuchi ,  Takao Kuroda

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L29/423 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H01L29/78

CPC分类号： H01L29/42396

摘要： A charge transfer device is provided, which includes: a semiconductor substrate having transfer regions for transferring a signal charge; an insulating film formed on the semiconductor substrate; an electrode layer formed above the transfer regions with the insulating film sandwiched therebetween, the electrode layer having high-resistant portions and low-resistant portions alternately provided; and voltage application means for applying a voltage for changing a surface potential of the transfer regions to the low-resistant portions of the electrode layer.

摘要翻译： 提供电荷转移装置，其包括：具有用于传送信号电荷的转移区域的半导体衬底; 形成在半导体衬底上的绝缘膜; 形成在所述转印区域之上的绝缘膜夹在其间的电极层，所述电极层具有高阻抗部分和低阻抗部分交替设置; 以及电压施加装置，用于将转印区域的表面电位改变为电极层的低电阻部分的电压。

公开(公告)号：US5315137A

公开(公告)日：1994-05-24

申请号：US790782

申请日：1991-11-12

申请人： Masaji Asaumi ,  Takao Kuroda

发明人： Masaji Asaumi ,  Takao Kuroda

IPC分类号： H01L21/339 ,  H01L29/423 ,  H01L29/768 ,  H01L29/796

CPC分类号： H01L29/66954 ,  H01L29/42396 ,  H01L29/76833 ,  H01L29/76858

摘要： The present invention relates to a charge transfer device having high transfer efficiency without leaving over signal charges, a charge transfer device substantially shortened in the gate length so as to enhance the transfer speed, and a method of manufacturing and a method of driving such device. In the charge transfer device of the invention, the n.sup.- diffusion layer is formed on the semiconductor substrate. In the surface region of the n.sup.- diffusion layer, a plurality of n diffusion layers are formed at equal intervals. The interval of the adjacent n diffusion layers is about 5 to 10 .mu.m. On the n.sup.- diffusion layer, an insulation film is formed. On the insulation film, transfer electrodes having two different shapes are formed. The transfer electrodes of these two types are alternately arranged. These transfer electrodes differ in length. The length of the longer transfer electrodes is about twice the length of the shorter transfer electrodes. Furthermore, the right end of the n diffusion layer nearly coincides with the right end of the longer transfer electrodes formed on the gate oxide film in the spatial position.

摘要翻译： 本发明涉及一种电荷转移装置，其具有高的转印效率而不会离开信号电荷，电荷转移装置基本上缩短了栅极长度，从而提高了传送速度，以及一种制造方法和驱动该装置的方法。 在本发明的电荷转移装置中，在半导体衬底上形成n-扩散层。 在n扩散层的表面区域中，以等间隔形成多个n个扩散层。 相邻n个扩散层的间隔约为5〜10μm。 在n-扩散层上形成绝缘膜。 在绝缘膜上形成具有两种不同形状的转印电极。 这两种类型的转移电极交替排列。 这些转移电极的长度不同。 较长的传输电极的长度约为短传输电极长度的两倍。 此外，n扩散层的右端几乎与在空间位置上形成在栅极氧化膜上的较长传输电极的右端重合。

公开(公告)号：US4783702A

公开(公告)日：1988-11-08

申请号：US921493

申请日：1986-10-22

申请人： Yoshiaki Sone ,  Takao Kuroda

发明人： Yoshiaki Sone ,  Takao Kuroda

IPC分类号： H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/357 ,  H04N5/3725 ,  H04N5/3728 ,  H04N3/14

CPC分类号： H04N3/1568

摘要： A solid state image sensing device which transfers unnecessary signal charges accumulated at photoelectric conversion devices by a first charge pulse in a vertical blanking period to vertical transferring means and throws out the unnecessary signal charges using throw-away means. The necessary signal charges accumulated in the photoelectric conversion devices in such period after the first charge pulse are transferred by a second charge pulse to the vertical transferring means, a horizontal transferring means and a signal detecting means, thereby to issue a video signal.

摘要翻译： 一种固态图像感测装置，其将在光电转换装置中积累的不必要的信号电荷通过垂直消隐期间的第一充电脉冲传送到垂直传送装置，并且使用丢弃装置来抛出不必要的信号电荷。 在将第一充电脉冲通过第二充电脉冲传送到垂直传送装置，水平传送装置和信号检测装置之后的这段时间内累积在光电转换装置中的必要信号电荷，从而发出视频信号。

公开(公告)号：US08138819B2

公开(公告)日：2012-03-20

申请号：US12458484

申请日：2009-07-14

申请人： Takao Kuroda

发明人： Takao Kuroda

IPC分类号： H03K17/04

CPC分类号： H03K17/166

摘要： A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal.

公开(公告)号：US08064854B2

公开(公告)日：2011-11-22

申请号：US11898111

申请日：2007-09-10

申请人： Koji Yoshida ,  Takao Kuroda

发明人： Koji Yoshida ,  Takao Kuroda

IPC分类号： H01Q11/12

CPC分类号： G07C9/00309 ,  G07C2009/00333

摘要： In a transmitter device of a smart entry system for a vehicle, a transmitter antenna is provided between a variable power circuit and the ground, and is controlled by a switching circuit to transmit a searching radio wave. The transmission power of the antenna, that is, a range of reach of the searching radio wave is variably controlled by a drive output voltage applied to the antenna by a variable power circuit, which converts a battery voltage to the drive output voltage. Data to be transmitted in the searching radio wave is not used to modulate the drive output voltage but is used in an ON/OFF control of the switching circuit.

摘要翻译： 在用于车辆的智能进入系统的发射机装置中，发射机天线设置在可变功率电路和地之间，并由切换电路控制以发射搜索无线电波。 天线的发射功率，即搜索无线电波的到达范围由可变功率电路施加到天线的驱动输出电压可变地控制，该可变功率电路将电池电压转换为驱动输出电压。 在搜索电波中要发送的数据不用于调制驱动输出电压，而是用于开关电路的ON / OFF控制。

公开(公告)号：US20100013542A1

公开(公告)日：2010-01-21

申请号：US12458484

申请日：2009-07-14

申请人： Takao Kuroda

发明人： Takao Kuroda

IPC分类号： H03K17/687

CPC分类号： H03K17/166

摘要： A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal.

摘要翻译： 控制电路控制与电源电压和地之间的电负载串联连接的驱动晶体管。 控制电路包括一端连接到驱动晶体管的电源电压侧的上拉电阻，用于检测从驱动晶体管流到地的电流的电流检测电阻，包括起动晶体管的电流镜电路 连接在上拉晶体管和电流检测电阻之间。 电流镜电路提供电流的反射镜电流。 控制电路还包括电流源电路，用于根据镜电流向驱动晶体管的控制端提供驱动电流，以响应于外部控制信号导通驱动晶体管。