公开(公告)号：US20110024853A1

公开(公告)日：2011-02-03

申请号：US12892961

申请日：2010-09-29

申请人： Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

发明人： Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

IPC分类号： H01L29/66

CPC分类号： H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a manufacturing method of a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element substrate having a semiconductor element formed using a single crystal semiconductor region, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element substrate and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are fixed together.

摘要翻译： 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供了一种高可靠性的半导体器件的制造方法，其不被外部局部压力破坏，而且产率高。 在具有使用单晶半导体区域形成的半导体元件的元件基板上设置有有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，进行加热和压接 由此制造半导体器件，元件基板和有机化合物的高强度纤维或无机化合物浸渍有机树脂的结构体固定在一起。

公开(公告)号：US20110233556A1

公开(公告)日：2011-09-29

申请号：US13157338

申请日：2011-06-10

申请人： Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

发明人： Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

IPC分类号： H01L29/786

CPC分类号： H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.

摘要翻译： 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。 在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，加热和压接 由此制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。

公开(公告)号：US20100200663A1

公开(公告)日：2010-08-12

申请号：US12767909

申请日：2010-04-27

申请人： Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hisashi OHTANI ,  Takuya TSURUME

发明人： Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hisashi OHTANI ,  Takuya TSURUME

IPC分类号： G06K19/07 ,  H01L29/12 ,  H01L23/538

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1255

摘要： In the present application, is disclosed a method of manufacturing a flexible semiconductor device having an excellent reliability and tolerance to the loading of external pressure. The method includes the steps of: forming a separation layer over a substrate having an insulating surface; forming an element layer including a semiconductor element comprising a non-single crystal semiconductor layer, over the separation layer; forming an organic resin layer over the element layer; providing a fibrous body formed of an organic compound or an inorganic compound on the organic resin layer; heating the organic resin layer; and separating the element layer from the separation layer. This method allows the formation of a flexible semiconductor device having a sealing layer in which the fibrous body is impregnated with the organic resin.

摘要翻译： 在本申请中，公开了一种制造柔性半导体器件的方法，所述柔性半导体器件对外部压力的加载具有优异的可靠性和耐受性。 该方法包括以下步骤：在具有绝缘表面的基底上形成分离层; 在分离层上形成包括非单晶半导体层的半导体元件的元件层; 在元件层上形成有机树脂层; 在有机树脂层上提供由有机化合物或无机化合物形成的纤维体; 加热有机树脂层; 并将元件层与分离层分离。 该方法允许形成具有密封层的柔性半导体器件，其中纤维体浸渍有机树脂。

公开(公告)号：US20090065590A1

公开(公告)日：2009-03-12

申请号：US12204320

申请日：2008-09-04

申请人： Tomoyuki AOKI ,  Takuya TSURUME ,  Hiroki ADACHI ,  Nozomi HORIKOSHI ,  Hisashi OHTANI

发明人： Tomoyuki AOKI ,  Takuya TSURUME ,  Hiroki ADACHI ,  Nozomi HORIKOSHI ,  Hisashi OHTANI

IPC分类号： G06K19/077 ,  H01L21/56 ,  H01L23/29

CPC分类号： H01L23/29 ,  G06K19/07749 ,  H01L21/563 ,  H01L23/145 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/60 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/09701 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10T428/31522 ,  H01L2924/00

摘要： A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

摘要翻译： 形成包括薄膜晶体管的分离层和半导体元件层。 形成与半导体元件层电连接的导电树脂。 包含纤维和有机树脂层的第一密封层形成在半导体元件层和导电树脂上。 在第一密封层，半导体元件层和分离层中形成凹槽。 将液体滴入槽中以分离分离层和半导体元件层。 去除导电树脂上的第一密封层以形成开口。 一组第一密封层和半导体元件层被分成芯片。 芯片结合到形成在基材上的天线。 形成包括纤维和有机树脂层的第二密封层，以覆盖天线和芯片。

公开(公告)号：US20110186949A1

公开(公告)日：2011-08-04

申请号：US13084996

申请日：2011-04-12

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO ,  Takaaki KOEN ,  Yuto YAKUBO ,  Makoto YANAGISAWA ,  Hisashi OHTANI ,  Eiji SUGIYAMA ,  Nozomi HORIKOSHI

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO ,  Takaaki KOEN ,  Yuto YAKUBO ,  Makoto YANAGISAWA ,  Hisashi OHTANI ,  Eiji SUGIYAMA ,  Nozomi HORIKOSHI

IPC分类号： H01L29/66

CPC分类号： G06K19/07735 ,  G06K19/07722 ,  G06K19/07794 ,  H01L23/295 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.

摘要翻译： 一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。 半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。 在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。 其中一个结构体设置在片上天线和增强天线之间。 在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω·cm 2 / cm 2的导电膜。

公开(公告)号：US20110114936A1

公开(公告)日：2011-05-19

申请号：US13010362

申请日：2011-01-20

申请人： Kengo AKIMOTO ,  Hisashi OHTANI ,  Misako HIROSUE

发明人： Kengo AKIMOTO ,  Hisashi OHTANI ,  Misako HIROSUE

IPC分类号： H01L51/52

CPC分类号： H01L27/124 ,  H01L27/3244 ,  H01L2227/323

摘要： It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.

摘要翻译： 本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。 根据本发明的显示装置包括：包括一种导电类型的杂质区的半导体层; 栅极绝缘层，栅极电极层和与一个导电类型的杂质区域接触的布线层，设置在半导体层上; 导电层，其形成在所述栅绝缘层上并与所述布线层接触; 与导电层接触的第一电极层; 设置在所述第一电极层上的电致发光层; 以及第二电极层，其中所述布线层与所述第一电极层电连接，其间插入有导电层。

公开(公告)号：US20090134395A1

公开(公告)日：2009-05-28

申请号：US12358617

申请日：2009-01-23

申请人： Hisashi OHTANI ,  Yasushi OGATA

发明人： Hisashi OHTANI ,  Yasushi OGATA

IPC分类号： H01L27/15 ,  H01L33/00

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/78645

摘要： A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.

摘要翻译： 形成具有大介电常数的第一绝缘薄膜，例如氮化硅膜，以覆盖与源极线处于同一层的源极线和金属布线。 在第一绝缘膜上形成平坦度高的第二绝缘膜。 通过蚀刻第二绝缘膜在第二绝缘膜中形成开口，以选择性地暴露第一绝缘膜。 在第二绝缘膜和开口中形成用作遮光膜的导电膜，由此首先将绝缘膜用作电介质，由此在导电膜和金属布线之间形成像素的辅助电容器。 可以通过在辅助电容器形成液晶分子的取向紊乱（即，旋错）的大的选择区域中来增加有效孔径比。

公开(公告)号：US20080286950A1

公开(公告)日：2008-11-20

申请号：US12175481

申请日：2008-07-18

申请人： Akiharu MIYANAGA ,  Hisashi OHTANI ,  Yasuhiko TAKEMURA

发明人： Akiharu MIYANAGA ,  Hisashi OHTANI ,  Yasuhiko TAKEMURA

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  A61B18/20 ,  A61B2018/20359 ,  B23K26/08 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which the crystallized film is further exposed to a laser light for improving the crystallinity. The concentration of the catalyst metal in the semiconductor film and the location of the region to be added with the catalyst metal are so selected in order that a desired crystallinity and a desired crystal structure such as a vertical crystal growth or lateral crystal growth can be obtained. Further, active elements and driver elements of a circuit substrate for an active matrix type liquid crystal device are formed by such semiconductor devices having a desired crystallinity and crystal structure respectively.

摘要翻译： 制造使用结晶半导体膜的半导体器件。 通过向催化剂金属提供非晶硅膜以促进其结晶，然后加热进行热结晶，形成结晶半导体膜，随后将结晶膜进一步暴露于激光以提高结晶度。 选择半导体膜中的催化剂金属的浓度和添加有催化剂金属的区域的位置，以便可以获得期望的结晶度和期望的晶体结构，例如垂直晶体生长或横向晶体生长 。 此外，用于有源矩阵型液晶装置的电路基板的有源元件和驱动元件分别由具有期望的结晶度和晶体结构的这种半导体器件形成。

公开(公告)号：US20130001581A1

公开(公告)日：2013-01-03

申请号：US13587109

申请日：2012-08-16

申请人： Hisashi OHTANI ,  Yasushi OGATA

发明人： Hisashi OHTANI ,  Yasushi OGATA

IPC分类号： H01L29/786

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/78645

摘要： A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with the first insulating film serving as a dielectric.

摘要翻译： 形成具有大介电常数的第一绝缘薄膜，例如氮化硅膜，以覆盖与源极线处于同一层的源极线和金属布线。 在第一绝缘膜上形成平坦度高的第二绝缘膜。 通过蚀刻第二绝缘膜在第二绝缘膜中形成开口，以选择性地暴露第一绝缘膜。 在第二绝缘膜和开口中形成用作遮光膜的导电膜，由此在第一绝缘膜用作电介质的状态下，在导电膜和金属布线之间形成像素的辅助电容器。

公开(公告)号：US20120108049A1

公开(公告)日：2012-05-03

申请号：US13338366

申请日：2011-12-28

申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

IPC分类号： H01L21/28

CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。