公开(公告)号：US4850105A

公开(公告)日：1989-07-25

申请号：US196139

申请日：1988-05-19

申请人： Kazuo Nakajima ,  Katsuhiko Tomita

发明人： Kazuo Nakajima ,  Katsuhiko Tomita

IPC分类号： H01L23/28 ,  G01N27/403 ,  H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L23/057 ,  H01L23/14 ,  H01L23/31 ,  H01L23/498 ,  H01L23/50

CPC分类号： H01L21/568 ,  H01L23/057 ,  H01L23/145 ,  H01L23/3121 ,  H01L23/49838 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/24011 ,  H01L2224/24227 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/3011

摘要： A method of removing a lead from a semiconductor tip part is provided by inserting the tip part in a through hole of a substrate. The tip part is equalized in height with substrate by adhering an adhesive tape across the through hole. A gap is left between the tip part and through hole which is filled with an insulative resin. If the substrate already has electrically conductive portions on it, a conductive paste is printed on the substrate between conductive portions and the tip part. If the substrate does not already have them, the conductive portions are formed by the addition of conductive paste on the substrate and which extends to the tip part.

摘要翻译： 通过将前端部插入到基板的通孔中，来提供从半导体尖端部移除引线的方法。 通过将粘合带粘在通孔上，使顶端部与基板高度相等。 在顶端部分和填充有绝缘树脂的通孔之间留有间隙。 如果基板上已经具有导电部分，则在导电部分和尖端部分之间的基板上印刷导电浆料。 如果基板还没有它们，则通过在基板上添加导电浆料并且延伸到尖端部分而形成导电部分。

公开(公告)号：US08404043B2

公开(公告)日：2013-03-26

申请号：US12130863

申请日：2008-05-30

申请人： Kozo Fujiwara ,  Kazuo Nakajima

发明人： Kozo Fujiwara ,  Kazuo Nakajima

IPC分类号： C30B11/00

CPC分类号： C30B29/06 ,  C30B11/003 ,  C30B29/08 ,  C30B29/52

摘要： A high-quality polycrystalline bulk semiconductor having a large crystal grain size is produced by the casting method in which growth is regulated so as to proceed in the same plane direction, i.e., the {110}; plane or {112} plane is disclosed. The process, which is for producing a polycrystalline bulk semiconductor, comprises: a step in which a melt of a semiconductor selected among Si, Ge, and SiGe is held in a crucible; a step in which a bottom part of the crucible is cooled to give a temperature gradient and that part of the melt which is located directly on the crucible bottom is rapidly cooled in the beginning of growth to supercool the melt around the crucible bottom; a step in which the crucible is cooled to grow nuclei on the crucible bottom due to the supercooled state of the melt around the crucible bottom and thereby grow dendritic crystals along the crucible bottom; and a step in which a polycrystalline bulk of the semiconductor is then grown on the upper side of the dendritic crystals.

摘要翻译： 具有大晶粒尺寸的高质量多晶体半导体是通过在同一平面方向（即{110}）上进行调节而进行生长的铸造方法制造的。 平面或{112}平面。 用于制造多晶体半导体的方法包括：将从Si，Ge和SiGe中选择的半导体的熔体保持在坩埚中的步骤; 坩埚的底部被冷却以产生温度梯度并且直接位于坩埚底部上的部分熔体在生长开始时被快速冷却，以使熔化物在坩埚底部过冷; 由于坩埚底部的熔体的过冷状态，坩埚被冷却以在坩埚底部生长核的步骤，从而沿着坩埚底部生长树枝晶体; 并且在树枝状晶体的上侧生长半导体的多晶体的步骤。

公开(公告)号：US08017862B2

公开(公告)日：2011-09-13

申请号：US11583872

申请日：2006-10-20

申请人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

发明人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

IPC分类号： H01L25/00 ,  H01L31/00 ,  H02N6/00

CPC分类号： H01L31/0312 ,  H01L31/077 ,  Y02E10/50

摘要： In growing a single-crystal silicon by the present invention in a Czochralski method, after a surface of a silicon melt is brought into contact with a seed crystal in a crucible, the silicon melt being added with germanium, the single-crystal silicon is pulled while rotated, and the solar-cell single-crystal silicon substrate is sliced from the single-crystal silicon containing germanium, whereby a germanium content of solar-cell single-crystal silicon substrate is set in the range of not less than 0.03 mole % to less than 1.0 mole % when resistivity ranges from 1.4 to 1.9 Ωcm. Therefore, conversion efficiency is enhanced when compared with conventional single-crystal silicon substrates. Accordingly, solar cell power generation costs decreases, so that the single-crystal silicon of the present invention can widely be utilized as the substrate for the solar cell in which the high conversion efficiency is increasingly demanded.

摘要翻译： 在通过本发明的单晶硅以切克劳斯基法生长单晶硅之后，在将熔融硅表面与坩埚中的晶种接触之后，将硅熔体加入锗，将单晶硅拉出 同时旋转，并且从含单晶硅的锗切片太阳能电池单晶硅基板，由此将太阳能电池单晶硅基板的锗含量设定在不小于0.03摩尔％的范围内，相对于 当电阻率范围为1.4至1.9（OHgr·cm）时小于1.0摩尔％。 因此，与传统的单晶硅衬底相比，转换效率提高。 因此，太阳能电池发电成本降低，使得本发明的单晶硅可以广泛地用作其中越来越需要高转换效率的太阳能电池的基板。

公开(公告)号：US07117719B2

公开(公告)日：2006-10-10

申请号：US10497665

申请日：2001-12-05

申请人： Susumu Sawafuji ,  Masahiro Tomoeda ,  Kazuo Nakajima

发明人： Susumu Sawafuji ,  Masahiro Tomoeda ,  Kazuo Nakajima

IPC分类号： G01B13/10 ,  G01B13/00

CPC分类号： G01B13/10 ,  G01B13/16

摘要： In a measuring apparatus 10, an arm 36 is lowered to insert a measuring sphere 30 into a hole 22A in a workpiece 22, and further the measuring sphere 30 is lowered in the depth direction of the hole 22A. Thereby, the back pressure of compressed air is detected at a plurality of locations by an A/E (air/electricity) converter 18. The detected value is compared with the master reference value by a controller 20 to convert the detected value into the inside diameter of the hole 22A. Thereby, the shape of various holes can be measured.

摘要翻译： 在测量装置10中，臂36下降以将测量球30插入到工件22中的孔22A中，并且测量球30在孔22A的深度方向上下降。由此，背压 的压缩空气通过A / E（空气/电力）转换器18在多个位置处被检测。 通过控制器20将检测值与主基准值进行比较，以将检测值转换成孔22A的内径。由此，可以测量各种孔的形状。

公开(公告)号：US20050034756A1

公开(公告)日：2005-02-17

申请号：US10860060

申请日：2004-06-04

申请人： Kazuo Nakajima ,  Noritaka Usami ,  Toru Ujihara ,  Kozo Fujiwara

发明人： Kazuo Nakajima ,  Noritaka Usami ,  Toru Ujihara ,  Kozo Fujiwara

IPC分类号： C30B19/00 ,  C30B19/10 ,  C30B19/12 ,  C30B29/06 ,  H01L21/208 ,  H01L31/04 ,  H01L31/18 ,  H01L31/00

CPC分类号： H01L31/1804 ,  C30B19/00 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02625 ,  Y02E10/547 ,  Y02P70/521

摘要： A Si melt is contacted to a main surface of a Si substrate made of metallurgical Si raw material to conduct liquid phase epitaxy within a temperature range around Si melting point and to form a Si crystal thin film on the main surface of the Si substrate.

摘要翻译： Si熔融物与由冶金Si原料制成的Si衬底的主表面接触，以在Si熔点附近的温度范围内进行液相外延生长，并在Si衬底的主表面上形成Si晶体薄膜。

公开(公告)号：US4065984A

公开(公告)日：1978-01-03

申请号：US569015

申请日：1975-04-17

申请人： Kazuo Nakajima

发明人： Kazuo Nakajima

IPC分类号： B62M11/16 ,  F16H3/44 ,  F16H5/12

CPC分类号： B62M11/16

摘要： A bicycle speed change mechanism in which five speeds are obtained with mechanism contained internally within the hub of a bicycle wheel. A pair of planetary gear mechanisms are mounted on a hub axle within a hub body, and two separate speed change rods are provided to selectively and separately control operation of the planetary gear mechanisms to obtain five numerically-different drive ratios. The separate speed change rods are manipulated at the control of the bicycle rider to select gear ratios ranging from the lowest to the highest available gear.

摘要翻译： 一种自行车变速机构，其中获得具有内部在自行车车轮的轮毂内的机构的五个速度。 一对行星齿轮机构安装在轮毂体内的轮毂轴上，并提供两个单独的变速杆，用于选择性地并且分别地控制行星齿轮机构的操作以获得五个数字不同的传动比。 单独的变速杆在自行车骑行者的控制下被操纵以选择从最低到最高可用齿轮的传动比。

公开(公告)号：US4052914A

公开(公告)日：1977-10-11

申请号：US566722

申请日：1975-04-10

申请人： Kazuo Nakajima

发明人： Kazuo Nakajima

IPC分类号： B62M11/16 ,  F16H3/44

CPC分类号： B62M11/16

摘要： The present invention relates to an internally accommodated three-stage speed change mechanism and an internally accommodated five-stage speed mechanism applicable to a bicycle, in which inside a hub body incorporating a portion of a speed change mechanism a first planetary gear mechanism is accommodated and a first speed changing rod is provided for controlling the first planetary gear mechanism, the ring gear of which is slidably moved by first the speed changing rod and the planetary gear of which remains axially fixed regardless of the first speed change rod.Further, a second planetary gear mechanism is assembled additionally to the aforesaid planetary gear mechanism and a second speed changing rod controlling the revolution and torque transmitting process of a sun gear of the second planetary gear mechanism is provided.

摘要翻译： 本发明涉及一种适用于自行车的内部容纳的三级变速机构和内部容纳的五级转速机构，其中，包括容纳有第一行星齿轮机构的变速机构的一部分的轮毂体内， 第一变速杆被设置用于控制第一行星齿轮机构，其环形齿轮首先被变速杆可滑动地移动，行星齿轮的行星齿轮保持轴向固定，而与第一变速杆无关。

公开(公告)号：US08406379B2

公开(公告)日：2013-03-26

申请号：US12733361

申请日：2008-08-28

申请人： Hiroshi Okuda ,  Kazuo Nakajima ,  Kozo Fujiwara

发明人： Hiroshi Okuda ,  Kazuo Nakajima ,  Kozo Fujiwara

IPC分类号： G21K1/06 ,  G01N23/20

CPC分类号： G21K1/06 ,  C30B29/06 ,  C30B29/08 ,  C30B29/607 ,  C30B33/02 ,  G21K2201/062 ,  G21K2201/064 ,  G21K2201/067

摘要： In one embodiment of the present invention, a curvature distribution crystal lens of the present invention is obtained via press-molding. In the case of a Ge single crystal plate, a temperature for the press-molding is in a range 1° C. to 120° C. lower than a melting point. In the case of a Si single crystal plate, a temperature for the press-molding is in a range 1° C. to 200° C. lower than a melting point. The curvature distribution crystal lens has a crystal lattice plane forming a 1D cylindrically curved surface or a 1D logarithmically curved surface whose valley is in a direction perpendicular to a direction having a maximum curvature, the direction having the maximum curvature being within 30° from a [001] or [1-10] direction in a (110) plane. As a result, it is possible to make an integrated reflection intensity uniform and to make a half-value width uniform in a wide range. Consequently, it is possible to achieve a curvature distribution crystal lens having a wide incident angle range and a high light focusing accuracy.

摘要翻译： 在本发明的一个实施例中，本发明的曲率分布晶体透镜是通过压制成型获得的。 在Ge单晶板的情况下，加压成型的温度比熔点低1℃〜120℃。 在Si单晶板的情况下，加压成型的温度在比熔点低1℃〜200℃的范围内。 曲率分布晶体透镜具有形成1D圆柱形曲面的晶格面或1D对数曲面，其谷在与具有最大曲率的方向垂直的方向上，具有最大曲率的方向与[ 001]或[1-10]方向。 结果，可以使整体反射强度均匀，并使宽度范围内的半值宽度均匀。 因此，可以实现具有宽入射角范围和高聚焦精度的曲率分布晶体透镜。

公开(公告)号：US07075827B2

公开(公告)日：2006-07-11

申请号：US09754632

申请日：2001-01-04

申请人： Kazuo Aoyama ,  Hiroshi Sawada ,  Akira Nagoya ,  Kazuo Nakajima ,  Tadashi Shibata

发明人： Kazuo Aoyama ,  Hiroshi Sawada ,  Akira Nagoya ,  Kazuo Nakajima ,  Tadashi Shibata

IPC分类号： G11C16/04

CPC分类号： G11C27/005 ,  G06F15/7867 ,  G06N3/0635 ,  H03K5/133 ,  H03K19/08 ,  H03K19/0813 ,  H03K19/17736 ,  H03K19/17748 ,  H03K19/1776 ,  H03K19/1778 ,  H03K2005/00156

摘要： A function reconfigurable semiconductor device is provided. The function reconfigurable semiconductor device includes a plurality of function cells, each of the function cells being a basic unit which realizes a function; each of the function cells including a plurality of threshold elements; each of the threshold elements including means which stores a threshold value; and wherein a function which is realized by the function cell is determined by determining the threshold value in each of the threshold elements. In addition, the semiconductor device includes a nonvolatile memory which stores data for realizing the function in the function cells.

公开(公告)号：US20050005715A1

公开(公告)日：2005-01-13

申请号：US10497665

申请日：2001-12-05

申请人： Susumu Sawafuji ,  Masahiro Tomoeda ,  Kazuo Nakajima

发明人： Susumu Sawafuji ,  Masahiro Tomoeda ,  Kazuo Nakajima

IPC分类号： G01B13/08 ,  G01B13/10 ,  G01B13/16

CPC分类号： G01B13/10 ,  G01B13/16

摘要： In a measuring apparatus 10, an arm 36 is lowered to insert a measuring sphere 30 into a hole 22A in a workpiece 22, and further the measuring sphere 30 is lowered in the depth direction of the hole 22A. Thereby, the back pressure of compressed air is detected at a plurality of locations by an A/E converter 18. The detected value is compared with the master reference value by a controller 20 to convert the detected value into the inside diameter of the hole 22A. Thereby, the shape of various holes can be measured.

摘要翻译： 在测量装置10中，臂36下降以将测量球30插入到工件22中的孔22A中，并且测量球30在孔22A的深度方向上下降。 由此，通过A / E转换器18在多个位置检测压缩空气的背压。通过控制器20将检测值与主基准值进行比较，将检测值转换为孔22A的内径 。 由此，可以测量各种孔的形状。