公开(公告)号：US09034729B2

公开(公告)日：2015-05-19

申请号：US12438869

申请日：2007-08-22

申请人： Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Kazuo Okada ,  Yuichi Morita ,  Hiroyuki Shinogi ,  Shinzo Ishibe ,  Yoshinori Seki ,  Takashi Noma

发明人： Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Kazuo Okada ,  Yuichi Morita ,  Hiroyuki Shinogi ,  Shinzo Ishibe ,  Yoshinori Seki ,  Takashi Noma

IPC分类号： H01L21/30 ,  H01L27/146 ,  B81C1/00

CPC分类号： H01L27/14618 ,  B81C1/00269 ,  B81C2203/0118 ,  H01L27/14625 ,  H01L27/14683 ,  H01L27/14685 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2924/00014

摘要： An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting body 5 having a penetration hole 6 penetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substrate 2 with an adhesive layer 4 being interposed therebetween. A device element 1 and wiring layers 3 are formed on the front surface of the semiconductor substrate 2. A second supporting body 7 is attached to the first supporting body 5 with an adhesive layer 8 being interposed therebetween so as to cover the penetration hole 6. The device element 1 is sealed in a cavity 9 surrounded by the semiconductor substrate 2, the first supporting body 5 and the second supporting body 7.

摘要翻译： 本发明的目的是提供一种较小的半导体器件，其制造工艺简化并且制造成本降低，并且制造该半导体器件的方法。 此外，本发明的目的是提供一种具有空腔的半导体器件。 具有穿透孔6的从前表面到后表面穿透的第一支撑体5被粘附在半导体衬底2的前表面上，其间插入有粘合剂层4。 器件元件1和布线层3形成在半导体衬底2的前表面上。第二支撑体7被安装在第一支撑体5上，其中夹有粘合剂层8以覆盖穿透孔6。 器件元件1被密封在由半导体衬底2，第一支撑体5和第二支撑体7包围的空腔9中。

公开(公告)号：US08653612B2

公开(公告)日：2014-02-18

申请号：US12438879

申请日：2007-08-22

申请人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Hiroshi Yamada

发明人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Hiroshi Yamada

IPC分类号： H01L29/84

CPC分类号： H01L27/14625 ,  H01L23/3135 ,  H01L27/14618 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2924/00

摘要： An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A device element 3 is formed on a front surface of a semiconductor substrate 4, and a sealing body 1 is attached to the semiconductor substrate 4 with an adhesive layer 6 being interposed therebetween. A main surface (a back surface) of the sealing body 1 which faces the semiconductor substrate 4 is curved inward, and there is a given space (a cavity 2) between the sealing body 1 and the semiconductor substrate 4. Since the back surface of the sealing body 1 is curved, the sealing body 1 is used as a planoconcave lens (a reverse direction) as well as a sealing member for the device element 3.

摘要翻译： 本发明的目的是提供一种较小的半导体器件，其制造过程被简化并且制造成本降低。 此外，本发明的目的是提供一种具有空腔的半导体器件。 器件元件3形成在半导体衬底4的前表面上，并且密封体1被粘附在半导体衬底4上，其间夹有粘合剂层6。 密封体1的面向半导体基板4的主表面（背面）向内弯曲，并且在密封体1和半导体基板4之间具有给定的空间（空腔2）。由于背面 密封体1弯曲，密封体1用作平凸透镜（反方向）以及用于装置元件3的密封构件。

公开(公告)号：US20090321903A1

公开(公告)日：2009-12-31

申请号：US12438888

申请日：2007-08-22

申请人： Hiroyuki Shinogi ,  Katsuhiko Kitagawa ,  Kazuo Okada ,  Hiroshi Yamada

发明人： Hiroyuki Shinogi ,  Katsuhiko Kitagawa ,  Kazuo Okada ,  Hiroshi Yamada

IPC分类号： H01L23/02 ,  H01L21/50

CPC分类号： H01L27/14618 ,  B81C1/00269 ,  H01L23/315 ,  H01L27/14625 ,  H01L27/14685 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： This invention is directed to offer a semiconductor device in which a cavity space is easily provided in a specific region when a supporting member is bonded to a semiconductor substrate through an adhesive layer, and its manufacturing method. A resist layer is applied to an entire top surface of the semiconductor substrate 2, and exposure to transfer a pattern is performed. By subsequent development and selective removal of the resist layer, the resist layer is formed into a shape of a plurality of columnar structures 4. Then, an adhesive material made of an epoxy resin or the like is applied to the entire top surface of the semiconductor substrate 2. The adhesive material is gathered around the columnar structures 4 by itself to form an adhesive layer 5. Therefore, in contrast, the adhesive layer 5 does not deposit in a region where the cavity is to be formed. Then, the supporting member 6 is bonded through the columnar structures 4 and the adhesive layer 5. By bonding the supporting member 6, there is formed the cavity 7 surrounded with the semiconductor substrate 2, the columnar structures 3 and the supporting member 6.

摘要翻译： 本发明旨在提供一种半导体器件及其制造方法，其中当支撑构件通过粘合剂层结合到半导体衬底时，在特定区域中容易设置空腔。 将抗蚀剂层施加到半导体衬底2的整个顶表面，并且进行曝光以转印图案。 通过随后的抗蚀剂层的显影和选择性去除，将抗蚀剂层形成为多个柱状结构体4的形状。然后，将由环氧树脂等制成的粘合剂材料施加到半导体的整个顶表面 基材2.粘合剂材料自身聚集在柱状结构4周围以形成粘合剂层5.因此，相反，粘合剂层5不会沉积在要形成空腔的区域中。 然后，支撑部件6通过柱状结构体4和粘合剂层5接合。通过粘合支撑部件6，形成有被半导体基板2，柱状结构体3和支撑部件6包围的空腔7。

公开(公告)号：US20070145590A1

公开(公告)日：2007-06-28

申请号：US11639411

申请日：2006-12-15

申请人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L23/52

CPC分类号： H01L27/14618 ,  H01L27/14636 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/10 ,  H01L2924/00014

摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。

公开(公告)号：US08766408B2

公开(公告)日：2014-07-01

申请号：US11714906

申请日：2007-03-07

申请人： Takashi Noma ,  Shigeki Otsuka ,  Yuichi Morita ,  Kazuo Okada ,  Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

发明人： Takashi Noma ,  Shigeki Otsuka ,  Yuichi Morita ,  Kazuo Okada ,  Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

IPC分类号： H01L21/00

CPC分类号： H01L23/3128 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/49816 ,  H01L24/10 ,  H01L24/13 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/3511 ,  H01L2924/00

摘要： A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.

摘要翻译： 封装的半导体器件通过简化的制造工艺制造，并且在成本，厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后，形成保护层，该保护层在与焊盘电极对应的位置处具有开口，并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处，在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。

公开(公告)号：US07986021B2

公开(公告)日：2011-07-26

申请号：US11639410

申请日：2006-12-15

申请人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L31/0232

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L27/14625 ,  H01L31/0203 ,  H01L31/02327 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。

公开(公告)号：US07633133B2

公开(公告)日：2009-12-15

申请号：US11639411

申请日：2006-12-15

申请人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L31/0203 ,  H01L31/0216 ,  H01L31/0224

CPC分类号： H01L27/14618 ,  H01L27/14636 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/10 ,  H01L2924/00014

摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。

公开(公告)号：US20070145420A1

公开(公告)日：2007-06-28

申请号：US11639410

申请日：2006-12-15

申请人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L27/148

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L27/14625 ,  H01L31/0203 ,  H01L31/02327 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。

公开(公告)号：US08148811B2

公开(公告)日：2012-04-03

申请号：US12438888

申请日：2007-08-22

申请人： Hiroyuki Shinogi ,  Katsuhiko Kitagawa ,  Kazuo Okada ,  Hiroshi Yamada

发明人： Hiroyuki Shinogi ,  Katsuhiko Kitagawa ,  Kazuo Okada ,  Hiroshi Yamada

IPC分类号： H01L23/12 ,  H01L31/0232

CPC分类号： H01L27/14618 ,  B81C1/00269 ,  H01L23/315 ,  H01L27/14625 ,  H01L27/14685 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： This invention is directed to offer a semiconductor device in which a cavity space is easily provided in a specific region when a supporting member is bonded to a semiconductor substrate through an adhesive layer, and its manufacturing method. A resist layer is applied to an entire top surface of the semiconductor substrate 2, and exposure to transfer a pattern is performed. By subsequent development and selective removal of the resist layer, the resist layer is formed into a shape of a plurality of columnar structures 4. Then, an adhesive material made of an epoxy resin or the like is applied to the entire top surface of the semiconductor substrate 2. The adhesive material is gathered around the columnar structures 4 by itself to form an adhesive layer 5. Therefore, in contrast, the adhesive layer 5 does not deposit in a region where the cavity is to be formed. Then, the supporting member 6 is bonded through the columnar structures 4 and the adhesive layer 5. By bonding the supporting member 6, there is formed the cavity 7 surrounded with the semiconductor substrate 2, the columnar structures 3 and the supporting member 6.

摘要翻译： 本发明旨在提供一种半导体器件及其制造方法，其中当支撑构件通过粘合剂层结合到半导体衬底时，在特定区域中容易设置空腔。 将抗蚀剂层施加到半导体衬底2的整个顶表面，并且进行曝光以转印图案。 通过随后的抗蚀剂层的显影和选择性去除，将抗蚀剂层形成为多个柱状结构体4的形状。然后，将由环氧树脂等制成的粘合剂材料施加到半导体的整个顶表面 基材2.粘合剂材料自身聚集在柱状结构4周围以形成粘合剂层5.因此，相反，粘合剂层5不会沉积在要形成空腔的区域中。 然后，支撑部件6通过柱状结构体4和粘合剂层5接合。通过粘合支撑部件6，形成有被半导体基板2，柱状结构体3和支撑部件6包围的空腔7。

公开(公告)号：US20100065929A1

公开(公告)日：2010-03-18

申请号：US12438879

申请日：2007-08-22

申请人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Hiroshi Yamada

发明人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Hiroshi Yamada

IPC分类号： H01L29/84 ,  H01L31/0232

CPC分类号： H01L27/14625 ,  H01L23/3135 ,  H01L27/14618 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2924/00

摘要： An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A device element 3 is formed on a front surface of a semiconductor substrate 4, and a sealing body 1 is attached to the semiconductor substrate 4 with an adhesive layer 6 being interposed therebetween. A main surface (a back surface) of the sealing body 1 which faces the semiconductor substrate 4 is curved inward, and there is a given space (a cavity 2) between the sealing body 1 and the semiconductor substrate 4. Since the back surface of the sealing body 1 is curved, the sealing body 1 is used as a planoconcave lens (a reverse direction) as well as a sealing member for the device element 3.

摘要翻译： 本发明的目的是提供一种较小的半导体器件，其制造过程被简化并且制造成本降低。 此外，本发明的目的是提供一种具有空腔的半导体器件。 器件元件3形成在半导体衬底4的前表面上，并且密封体1被粘附在半导体衬底4上，其间夹有粘合剂层6。 密封体1的面向半导体基板4的主表面（背面）向内弯曲，并且在密封体1和半导体基板4之间存在给定的空间（空腔2）。由于背面 密封体1弯曲，密封体1用作平凸透镜（反方向）以及用于装置元件3的密封构件。