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    Semiconductor thin film and process for production thereof
    3.
    发明授权
    Semiconductor thin film and process for production thereof 有权
    半导体薄膜及其制造方法

    公开(公告)号：US07528408B2

    公开(公告)日：2009-05-05

    申请号：US11342602

    申请日：2006-01-31

    申请人： Kazuo Takeda ,  Jun Gotou ,  Masakazu Saito ,  Makoto Ohkura ,  Takeshi Satou ,  Hiroshi Fukuda ,  Takeo Shiba

    发明人： Kazuo Takeda ,  Jun Gotou ,  Masakazu Saito ,  Makoto Ohkura ,  Takeshi Satou ,  Hiroshi Fukuda ,  Takeo Shiba

    IPC分类号： H01L29/10

    CPC分类号： C30B29/06 ,  C30B13/00 ,  Y10S117/904

    摘要： To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

    摘要翻译： 为了改善多晶非晶硅的激光退火工艺，以高通量形成具有大晶粒直径的硅薄膜，本发明涉及通过用脉冲激光照射形成在基板上的半导体薄膜进行结晶的工艺 。 该方法包括具有将激光成形为线性光束的装置以及通过穿过垂直于线性光束的相移条纹图案来周期性和空间地调制脉冲激光在线性光束的长轴方向上的强度的装置 长轴，并且对于每一次射出，共同形成由在被线束束照射的整个区域上沿一定方向生长的晶体的多晶膜。

    Method of manufacturing an active matrix substrate and an image display device using the same
    7.
    发明授权
    Method of manufacturing an active matrix substrate and an image display device using the same 有权
    制造有源矩阵基板的方法和使用其的图像显示装置

    公开(公告)号：US07022558B2

    公开(公告)日：2006-04-04

    申请号：US10712712

    申请日：2003-11-14

    申请人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

    发明人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

    IPC分类号： H01L21/00

    CPC分类号： H01L21/0268 ,  B23K26/0622 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78645

    摘要： The present invention provides a manufacturing method of a high performance active matrix substrate at a high throughput with a less expensive apparatus, and an image display device using the active matrix substrate. On a stage moving in the short axis direction X and long axis direction Y on a rail, a glass substrate is carried, which has an amorphous silicon semiconductor film formed. Polycrystallized and large grain silicon film may be obtained by intensity modulating the pulsed laser beam in a line beam shape by means of a phase shift mask with a periodicity in the long axis direction Y of the laser beam, moving the laser beam randomly in the modulation direction of the amorphous silicon semiconductor film formed on the glass substrate to expose to crystallize the film. The image display device may incorporate an active matrix substrate having active elements such as thin film transistors formed by this silicon film.

    摘要翻译： 本发明以较低成本的装置提供高产量的高性能有源矩阵基板的制造方法以及使用有源矩阵基板的图像显示装置。 在轨道上沿短轴方向X和长轴方向Y移动的台架上，承载形成有非晶硅半导体膜的玻璃基板。 通过利用在激光束的长轴方向Y上具有周期性的相移掩模以线束形式对脉冲激光束进行强度调制，可以获得多晶硅和大晶粒硅膜，在激光束的随机调制 在玻璃基板上形成的非晶硅半导体膜的方向露出以使膜结晶。 该图像显示装置可以包括具有有源元件的有源矩阵基板，例如由该硅膜形成的薄膜晶体管。

    Method of manufacturing an active matrix substrate and an image display device using the same
    8.
    发明授权
    Method of manufacturing an active matrix substrate and an image display device using the same 有权
    制造有源矩阵基板的方法和使用其的图像显示装置

    公开(公告)号：US07655950B2

    公开(公告)日：2010-02-02

    申请号：US11341681

    申请日：2006-01-30

    申请人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

    发明人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

    IPC分类号： H01L29/04

    CPC分类号： H01L21/0268 ,  B23K26/0622 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78645

    摘要： The present invention provides a manufacturing method of a high performance active matrix substrate at a high throughput with a less expensive apparatus, and an image display device using the active matrix substrate. On a stage moving in the short axis direction X and long axis direction Y on a rail, a glass substrate is carried, which has an amorphous silicon semiconductor film formed. Polycrystallized and large grain silicon film may be obtained by intensity modulating the pulsed laser beam in a line beam shape by means of a phase shift mask with a periodicity in the long axis direction Y of the laser beam, moving the laser beam randomly in the modulation direction of the amorphous silicon semiconductor film formed on the glass substrate to expose to crystallize the film. The image display device may incorporate an active matrix substrate having active elements such as thin film transistors formed by this silicon film.

    摘要翻译： 本发明以较低成本的装置提供高产量的高性能有源矩阵基板的制造方法以及使用有源矩阵基板的图像显示装置。 在轨道上沿短轴方向X和长轴方向Y移动的台架上，承载形成有非晶硅半导体膜的玻璃基板。 通过利用在激光束的长轴方向Y上具有周期性的相移掩模以线束形式对脉冲激光束进行强度调制，可以获得多晶硅和大晶粒硅膜，在激光束的随机调制 在玻璃基板上形成的非晶硅半导体膜的方向露出以使膜结晶。 该图像显示装置可以包括具有有源元件的有源矩阵基板，例如由该硅膜形成的薄膜晶体管。