Lithography evaluating method, semiconductor device manufacturing method and program medium
    3.
    发明申请
    Lithography evaluating method, semiconductor device manufacturing method and program medium 审中-公开
    光刻评估方法,半导体器件制造方法和程序介质

    公开(公告)号:US20050167661A1

    公开(公告)日:2005-08-04

    申请号:US10994242

    申请日:2004-11-23

    CPC分类号: G03F7/70616

    摘要: A lithography evaluating method comprises preparing a substrate, the substrate including a semiconductor substrate and a wiring structure including at least one wiring layer formed on the semiconductor substrate, partitioning the substrate into a plurality of regions to be evaluated, and obtaining a value of property relating to the wiring structure previously, and evaluating proximity effect on each of the plurality of regions to be evaluated based on the value of the property relating to the wiring structure.

    摘要翻译: 光刻评估方法包括准备衬底,所述衬底包括半导体衬底和布线结构,所述布线结构包括形成在所述半导体衬底上的至少一个布线层,将所述衬底划分成多个要评估的区域,并获得相关的属性值 并且基于与布线结构相关的属性的值来评估要评估的多个区域中的每一个上的接近效应。

    Focus monitoring method
    4.
    发明授权
    Focus monitoring method 有权
    聚焦监测方法

    公开(公告)号:US08023759B2

    公开(公告)日:2011-09-20

    申请号:US11947239

    申请日:2007-11-29

    申请人: Kazuo Tawarayama

    发明人: Kazuo Tawarayama

    IPC分类号: G06K9/40

    CPC分类号: G03F7/70641

    摘要: According to an aspect of the present invention, there is provided a method of monitoring a focus position on a surface of a wafer for an exposure apparatus which transfers by exposure a pattern formed on a mask onto the wafer, including tilting at least one of the mask and an exposure area on the wafer and performing exposure while the mask and the exposure area have a relative angle, to form two spurious resolution images of the pattern of the mask in the exposure area; measuring positions of the two spurious resolution images formed in the exposure area and detecting an optimal focus position of the exposure apparatus on the basis of a middle point between the measured positions of the two spurious resolution images.

    摘要翻译: 根据本发明的一个方面,提供了一种监视用于曝光装置的晶片表面上的聚焦位置的方法,该曝光装置通过曝光将形成在掩模上的图案转印到晶片上,包括使至少一个 掩模和曝光区域,并且在掩模和曝光区域具有相对角度的同时执行曝光,以在曝光区域中形成掩模图案的两个伪分辨率图像; 测量形成在曝光区域中的两个伪分辨率图像的位置,并且基于两个伪分辨率图像的测量位置之间的中间点来检测曝光装置的最佳聚焦位置。

    Extreme ultraviolet light source apparatus and method of adjusting the same
    5.
    发明授权
    Extreme ultraviolet light source apparatus and method of adjusting the same 有权
    极紫外光源装置及其调整方法

    公开(公告)号:US08067757B2

    公开(公告)日:2011-11-29

    申请号:US12696759

    申请日:2010-01-29

    申请人: Kazuo Tawarayama

    发明人: Kazuo Tawarayama

    IPC分类号: G01N21/33 G01N21/00 H05H1/24

    CPC分类号: G03F7/70033

    摘要: An extreme ultraviolet light source apparatus includes a main body including a supply section to which an extreme ultraviolet radiation seed is supplied, and an emission part configured to emit extreme ultraviolet, an excitation unit provided in the main body and configured to generate a plasma by exciting the extreme ultraviolet radiation seed, an optical condensing unit provided in the main body and configured to converge extreme ultraviolet, which is radiated from the plasma, at the emission part, a trap provided between the excitation unit and the optical condensing unit, a first positioning mechanism connected to the trap and configured to adjust at least one of a position and an angle of the trap, and a measuring unit configured to measure a far field distribution image of the plasma on the basis of the extreme ultraviolet which is emitted from the emission part, thereby to operate the first positioning mechanism.

    摘要翻译: 一种极紫外光源装置包括:主体,其包括供给极紫外线辐射种子的供给部和被配置为发射极紫外线的发射部;激励部,设置在主体中,并且被配置为通过激励产生等离子体 所述极紫外辐射种子,设置在所述主体中并且被配置为在所述发射部分处会聚从所述等离子体辐射的极紫外线的聚光单元,设置在所述激发单元和所述光聚焦单元之间的陷阱,第一定位 连接到所述陷阱并被配置为调整所述陷阱的位置和角度中的至少一个的机构,以及测量单元,其被配置为基于从所述发射器发射的所述极紫外线来测量所述等离子体的远场分布图像 从而操作第一定位机构。

    MICROFABRICATION APPARATUS AND DEVICE MANUFACTURING METHOD
    6.
    发明申请
    MICROFABRICATION APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    微生物装置和装置制造方法

    公开(公告)号:US20090095711A1

    公开(公告)日:2009-04-16

    申请号:US12237806

    申请日:2008-09-25

    IPC分类号: B44C1/22 B29C43/02

    摘要: A microfabrication apparatus for pressing an original plate including a pattern down on a substrate to transfer the pattern on the substrate includes a first measurement unit for measuring relative positional displacement between the substrate and the plate above the substrate, a position correction unit for correcting relative position between the substrate and the plate such that the pattern is to be transferred on a first predetermined position of the substrate based on the relative positional displacement measured by the first measurement unit, a pressing unit for pressing the plate above the substrate down on the substrate to transfer the pattern on the substrate in a state that the relative positional displacement between the substrate and the plate is corrected by the position correction unit, and a second measurement unit for measuring relative positional relationship between the pattern transferred on the substrate and a pattern previously formed on the substrate.

    摘要翻译: 一种用于将包括图案的原稿板压在基板上以将图案转印到基板上的微加工装置包括:第一测量单元,用于测量基板和基板上方的板之间的相对位置偏移;位置校正单元,用于校正相对位置 在基板和板之间,基于由第一测量单元测量的相对位置位移,将图案转印到基板的第一预定位置上;按压单元,用于将基板上方的基板向下压在基板上, 在通过位置校正单元校正基板和板之间的相对位置偏移的状态下,在基板上转印图案;以及第二测量单元,用于测量在基板上传送的图案与先前形成的图案之间的相对位置关系 在基板上。

    PATTERNING METHOD AND TEMPLATE
    7.
    发明申请
    PATTERNING METHOD AND TEMPLATE 审中-公开
    绘图方法和模板

    公开(公告)号:US20140061969A1

    公开(公告)日:2014-03-06

    申请号:US13721631

    申请日:2012-12-20

    IPC分类号: B29C59/00

    CPC分类号: B29C59/002 G03F7/0002

    摘要: According to one embodiment, a patterning method includes releasing the template from the cured imprint resist, aligning an alignment mark formed in the non-imprint portion of the template with the transfer pattern of the alignment pattern without causing the alignment mark to contact the imprint resist, and causing the main pattern and the alignment pattern of the template to contact an imprint resist that is supplied to a shot region adjacent to the cured imprint resist and uncured. The method includes curing the imprint resist of the adjacent shot region in the state of the template being in contact to form the transfer pattern of the main pattern and the transfer pattern of the alignment pattern in the imprint resist.

    摘要翻译: 根据一个实施例,图案化方法包括从固化的压印抗蚀剂释放模板,将形成在模板的非印制部分中的对准标记与对准图案的转印图案对准,而不会使对准标记接触印记抗蚀剂 并且使得模板的主图案和对准图案与供给到与固化的印记抗蚀剂相邻的未被照射的照射区域的印刷抗蚀剂接触。 该方法包括在模板接触状态下固化相邻拍摄区域的抗印刷抗蚀剂,以形成印模抗蚀剂中主图案的转印图案和对准图案的转印图案。

    Exposure method, reticle, and method of manufacturing semiconductor device
    8.
    发明授权
    Exposure method, reticle, and method of manufacturing semiconductor device 有权
    曝光方法,掩模版和制造半导体器件的方法

    公开(公告)号:US06558852B1

    公开(公告)日:2003-05-06

    申请号:US09604723

    申请日:2000-06-28

    IPC分类号: G03F900

    摘要: An exposure method forms, in a shot area on a reticle, marks to measure arrangement errors that may occur between adjacent device patterns, transfers the marks from the reticle onto a wafer through exposure and development processes using an exposure system, measures arrangement errors according to the marks on the wafer, calculates four error components from the measured arrangement errors, and corrects the exposure system according to the calculated error components. This method eliminates superposition errors from the next exposure process, thereby effectively using the shot areas of exposure systems.

    摘要翻译: 曝光方法在掩模版的拍摄区域中形成标记以测量相邻装置图案之间可能发生的布置误差,通过使用曝光系统的曝光和显影处理将标线转印到晶片上,根据 晶片上的标记根据测量的布置误差计算出四个误差分量,并根据计算的误差分量校正曝光系统。 该方法消除了下一次曝光过程中的叠加误差,从而有效地利用曝光系统的拍摄区域。