摘要:
According to the invention an electron beam pattern transfer device with an improved alignment means is provided.A first and a second mark M.sub.1, M.sub.2 for alignment purposes are formed on the surface of the wafer and the wafer holder, respectively. The first mark M.sub.1 is formed on the wafer by conventional lithographic technique and the second mark M.sub.2 consists of a hole or a heavy metal, such as Ta or Ta.sub.2 O.sub.5. A third alignment mark M.sub.3 is provided on the photocathode mask having a position corresponding to M.sub.2 on the wafer holder and spaced a known distance L.sub.2 from an imaginary reference position M.sub.4 on the mask. The first step of the alignment process requires the detection of a relative distance L.sub.1 between the first and second marks M.sub.1, M.sub.2 by conventional detecting means, such as an optical measuring means. In the next step, the relative position of the photocathode mask and the wafer holder is adjusted so that the distance between the marks M.sub.2 and M.sub.3 is made substantially equal to the difference between the distance L.sub.1 and the known distance L.sub. 2.
摘要:
An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.
摘要:
An electron-beam image transfer device includes an evacuated vessel having a main chamber and spare chamber extended therefrom and a specimen holder and mask holder disposed in the main chamber. A subchamber is formed near the spare chamber to house a specimen. The specimen in the subchamber is transferred to the spare chamber by a movable support through an opening which is always kept in an airtight state, and then brought to the specimen holder by a transferring mechanism.
摘要:
A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.
摘要:
According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要:
In a charged beam drawing apparatus for drawing a desired pattern on a sample by deflecting a charged beam on the sample while continuously moving a stage on which the sample is placed, a mark having a line-and-space pattern, in which a plurality of heavy metal marks each having a width equal to a side of the charged beam are arranged with spaces each equal to the width between them, is formed on the sample. The charged beam is radiated onto the mark while the position of the beam is fixed, and at the same time the stage is continuously moved in the longitudinal direction of the mark, thereby detecting a reflected beam from the mark. On the basis of the signal of the detected reflected beam, a relative vibration during the continuous movement of the stage is measured. This makes it possible to measure the relative vibration produced by the continuous movement of the stage, resulting in an increase in drawing accuracy.
摘要:
According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要:
An electron beam type pattern transfer apparatus has a photoelectric mask and a sample in a vacuum container made of non-magnetic material. The photoelectric mask is adapted to receive an ultraviolet ray from a light source and emit photoelectrons corresponding to a predetermined transfer pattern and the sample is disposed in parallel with the photoelectric mask with a predetermined distance left therebetween and illuminated with the photoelectrons to form a resist image thereon which corresponds to the transfer pattern. A power source for applying a voltage for accelerating the photoelectrons emitted is connected between the photoelectric mask and the sample. A pair of focusing magnets are disposed around the axis of the vacuum container such that they are located one at one outer side and one in an opposite outer side of the vacuum container to permit a vertical magnetic field to be created between the photoelectric mask and the sample. The focusing magnets have superconductive coils and are driven in a persistent mode.
摘要:
A fixed-slit type photoelectric microscope comprises an irradiation system for irradiating a linear pattern with light beam, an objective for forming an image of the linear pattern, a single slit disposed at a point conjugate to the linear pattern with respect to the objective, a photoelectric conversion element for converting the light beam from the slit into an electrical signal, a rectifying circuit for rectifying an electrical signal from the photoelectric conversion element, and an indicator for visualizing the rectified signal. The irradiation system generates a pair of polarized light beams with planes of polarization orthogonal to each other and alternately illuminates the linear pattern with the pair of polarized light beams at fixed periods. For deflecting the pair of polarized light beams from the linear pattern in different directions, an optical deflecting element is provided between the linear pattern and the slit. Different portions of the slit are illuminated by the pair of polarized light beams deflected by the optical deflecting elements.
摘要:
An electrostatic chuck plate comprises an electrode plate made of electrically conductive material and a dielectric layer formed on one surface of the electrode plate by flame-spraying dielectric material. The surface region of the dielectric layer is impregnated with plastic material, and the surface of the dielectric layer is smooth and flat. A sample is electrostatically attracted toward the electrode plate and is thus held on the smooth and flat surface of the dielectric layer.