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102 条记录 (耗时 0.033 秒)

    Sputtering method and sputtering device
    1.
    发明申请
    Sputtering method and sputtering device 审中-公开
    溅射法和溅射装置

    公开(公告)号：US20070114122A1

    公开(公告)日：2007-05-24

    申请号：US11599058

    申请日：2006-11-14

    申请人： Keiji Ishibashi ,  Shunichi Wakayanagi

    发明人： Keiji Ishibashi ,  Shunichi Wakayanagi

    IPC分类号： C23C14/32 ,  C23C14/00

    CPC分类号： C23C14/35 ,  C23C14/0617 ,  C23C14/505 ,  H01J37/3408 ,  H01J37/3455

    摘要： It is an object of the invention to provide sputtering method and a sputtering device which can provide a uniform film-thickness distribution over the entire area of the substrate. A substrate as an object for a film-forming process and a target formed of a film-forming material are arranged in a container so as to oppose to each other, and a film is formed on a substrate while reciprocating a magnet arranged on the side of the target opposite from the substrate in parallel with the surface of the target, and rotating the substrate by a rotating unit (rotating mechanism). The film is formed while reciprocating the magnet and rotating the substrate by the rotating unit (rotating mechanism) after having set the film-thickness distribution of the thin film formed on the substrate along the longitudinal direction of the magnet to be thicker in the center portion of the substrate than the both end portion thereof.

    摘要翻译： 本发明的目的是提供溅射方法和溅射装置，其能够在基板的整个区域上提供均匀的膜厚度分布。 将作为成膜工序的目的的基板和由成膜材料形成的靶设置在彼此相对的容器中，并且在基板上形成膜，同时使布置在侧面上的磁铁往复运动 的与靶的表面平行的与基板相反的靶，并且通过旋转单元（旋转机构）旋转基板。 在将磁体的形成在基板上的薄膜的膜厚分布设定为较厚的中心部分之后，通过旋转单元（旋转机构）使磁体往复运动并旋转基板而形成薄膜 比其两端部分。

    Production method of compound semiconductor member
    2.
    发明授权
    Production method of compound semiconductor member 失效
    化合物半导体部件的制造方法

    公开(公告)号：US08115927B2

    公开(公告)日：2012-02-14

    申请号：US12622971

    申请日：2009-11-20

    申请人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

    发明人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

    IPC分类号： G01J4/00

    CPC分类号： G01N21/211

    摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

    摘要翻译： 1.一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光谱椭圆偏光测定的工序; 以及通过使用通过光谱椭圆偏振测量获得的光学常数的光谱，使用包含对应于化合物半导体部件的带隙的波长的波长带中的光谱来评估化合物半导体部件的表面的损伤的步骤。

    Nitride semiconductor light emitting device and method for forming the same
    3.
    发明授权
    Nitride semiconductor light emitting device and method for forming the same 有权
    氮化物半导体发光器件及其形成方法

    公开(公告)号：US07973322B2

    公开(公告)日：2011-07-05

    申请号：US12440643

    申请日：2008-04-17

    申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

    发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

    IPC分类号： H01L29/00 ,  H01L21/00

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

    摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

    摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

    Compound semiconductor substrate, semiconductor device, and processes for producing them
    4.
    发明授权
    Compound semiconductor substrate, semiconductor device, and processes for producing them 有权
    复合半导体衬底，半导体器件及其制造方法

    公开(公告)号：US07863609B2

    公开(公告)日：2011-01-04

    申请号：US12753535

    申请日：2010-04-02

    申请人： Keiji Ishibashi ,  Fumitake Nakanishi

    发明人： Keiji Ishibashi ,  Fumitake Nakanishi

    IPC分类号： H01L21/00 ,  H01L21/31 ,  H01L29/786

    CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/00 ,  C30B33/12

    摘要： A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer 12 at the surface of the compound semiconductor substrate 10 contained the chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and the oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, Si was reduced at an interface between the compound semiconductor substrate 10 and an epitaxial layer 14 formed thereon and, as a result, the electric resistance at the interface was reduced.

    摘要翻译： 根据本发明的化合物半导体衬底10由III族氮化物组成，其表面层12含有不低于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物 以及表面为O以上且3.0at％以上且15.0at％以下的氧化物。 本发明人进行了详细的研究，并且新发现，当化合物半导体基板10的表面上的表面层12含有不小于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物时，以Cl 并且氧化物以O计为3.0at％且不大于15.0at％时，在化合物半导体衬底10和形成在其上的外延层14之间的界面处Si还原，结果，电阻 在界面缩小。

    COMPOUND SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PROCESSES FOR PRODUCING THEM
    5.
    发明申请
    COMPOUND SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PROCESSES FOR PRODUCING THEM 有权
    化合物半导体衬底，半导体器件及其制造方法

    公开(公告)号：US20100224963A1

    公开(公告)日：2010-09-09

    申请号：US12753535

    申请日：2010-04-02

    申请人： Keiji Ishibashi ,  Fumitake Nakanishi

    发明人： Keiji Ishibashi ,  Fumitake Nakanishi

    IPC分类号： H01L29/20 ,  H01L29/02

    CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/00 ,  C30B33/12

    摘要： A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer 12 at the surface of the compound semiconductor substrate 10 contained the chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and the oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, Si was reduced at an interface between the compound semiconductor substrate 10 and an epitaxial layer 14 formed thereon and, as a result, the electric resistance at the interface was reduced.

    摘要翻译： 根据本发明的化合物半导体衬底10由III族氮化物组成，其表面层12含有不低于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物 以及表面为O以上且3.0at％以上且15.0at％以下的氧化物。 本发明人进行了详细的研究，并且新发现，当化合物半导体基板10的表面上的表面层12含有不小于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物时，以Cl 并且氧化物以O计为3.0at％且不大于15.0at％时，在化合物半导体衬底10和形成在其上的外延层14之间的界面处Si还原，结果，电阻 在界面缩小。

    Hydrogen atom generation source in vacuum treatment apparatus, and hydrogen atom transportation method
    6.
    发明授权
    Hydrogen atom generation source in vacuum treatment apparatus, and hydrogen atom transportation method 有权
    真空处理装置中的氢原子产生源，氢原子输运法

    公开(公告)号：US07771701B2

    公开(公告)日：2010-08-10

    申请号：US11816726

    申请日：2005-07-15

    申请人： Hironobu Umemoto ,  Atsushi Masuda ,  Koji Yoneyama ,  Keiji Ishibashi ,  Manabu Ikemoto

    发明人： Hironobu Umemoto ,  Atsushi Masuda ,  Koji Yoneyama ,  Keiji Ishibashi ,  Manabu Ikemoto

    IPC分类号： C01B3/02 ,  B01J19/02 ,  B05D7/22 ,  C23C16/22

    CPC分类号： C23C16/4404 ,  H01J37/32477 ,  H01J37/32871

    摘要： In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation source formed therein of a member surrounding the hydrogen atom generation source is coated with SiO2. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation source in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.

    摘要翻译： 在真空处理装置中的氢原子产生源中，能够有效地抑制氢原子与真空处理装置的处理室的内壁面的接触和输送通路的内壁面的复合，并被返回 形成氢分子，其中形成有围绕氢原子产生源的构件的氢原子产生源的面向空间的表面的至少一部分被涂覆有SiO 2。 在将真空处理装置中由氢原子产生源产生的氢原子转移到所需位置的氢原子输送方法中，氢原子通过内壁表面被SiO 2涂覆的输送通道输送。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FORMING THE SAME
    8.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FORMING THE SAME 有权
    氮化物半导体发光器件及其形成方法

    公开(公告)号：US20100059759A1

    公开(公告)日：2010-03-11

    申请号：US12440643

    申请日：2008-04-17

    申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

    发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

    摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

    摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。