公开(公告)号：US6106625A

公开(公告)日：2000-08-22

申请号：US023852

申请日：1998-02-13

申请人： Keith Koai ,  Mark Johnson ,  Mei Chang ,  Lawrence Chung Lei

发明人： Keith Koai ,  Mark Johnson ,  Mei Chang ,  Lawrence Chung Lei

IPC分类号： C23C16/50 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/0206

摘要： A plasma reaction chamber particularly configured for chemical vapor deposition of titanium nitride with a TDMAT precursor, the deposition including a plasma step. Gas is injected from a gas cavity in a showerhead electrode assembly through a large number of showerhead holes into the processing region over the wafer. The showerhead electrode is capable of being RF energized to create a plasma of a gas in the processing region. The showerhead electrode and other parts of the assembly are cooled by a cooling plate disposed above the gas cavity and connected to a rim of the showerhead electrode. A convolute water-cooling channel is formed in the cooling plate having a small cross section and numerous bends so as to create turbulent flow, thus aiding thermal transfer. The water cooling plate is connected to the showerhead electrode across a large horizontal interface, thus also aiding thermal flow. An edge ring assembly is positioned in a peripheral recess at the top of heater pedestal supporting the wafer next to the processing region. The showerhead is insulated from the chamber body by an isolator having a downwardly sloping lower surface facing the processing region. Thereby, the isolator by itself or in combination with a plasma confinement ring around the wafer confines the plasma to the process area and induces the exhaust to flow downwardly from the processing region. The assembly includes a Z-shaped heat shield disposed between the walls of the recess and of the pedestal side and other parts of the ring assembly with gaps between the various members, thereby promoting thermal isolation in the edge region as well as protecting the side of the pedestal.

摘要翻译： 一种等离子体反应室，特别配置用于化学气相沉积氮化钛与TDMAT前体，沉积包括等离子体步骤。 气体通过大量喷头孔从喷头电极组件中的气腔注入到晶片上的处理区域中。 喷头电极能够被RF激励以在处理区域中产生气体的等离子体。 淋浴头电极和组件的其它部分由设置在气腔上方并连接到喷头电极的边缘的冷却板冷却。 在具有小横截面和多次弯曲的冷却板中形成卷积水冷却通道，以产生湍流，从而有助于热转印。 水冷却板通过大的水平界面连接到喷头电极，从而也有助于热流。 边缘环组件位于加热器支架的顶部的周边凹部中，该加热器底座支撑处理区域旁边的晶片。 淋浴头通过隔离器与腔体绝缘，隔离器具有面向加工区域的向下倾斜的下表面。 因此，隔离器本身或与晶片周围的等离子体约束环组合限制了等离子体到处理区域并且引起排气从处理区域向下流动。 组件包括设置在凹部的壁之间的基座侧的Z形隔热罩和环形组件的其它部件之间的间隙，从而促进边缘区域中的热隔离以及保护边缘区域的侧面 基座。

公开(公告)号：US6063441A

公开(公告)日：2000-05-16

申请号：US982727

申请日：1997-12-02

申请人： Keith Koai ,  Lawrence Chung-Lai Lei ,  Mei Chang ,  Mark S. Johnson

发明人： Keith Koai ,  Lawrence Chung-Lai Lei ,  Mei Chang ,  Mark S. Johnson

IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/0206

摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. The processing chamber includes a chamber lid assembly having an isolator ring member that has a sloping surface for confirming the plasma within a processing zone of the processing chamber while the wafer is being processed therein. A method for forming a CVD layer on a wafer comprising elevating the pedestal until an upper pedestal surface of the pedestal extends above a lower edge of the isolator ring member.

摘要翻译： 衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。 本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。 放置在基座上的优选地也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。 处理室包括具有隔离器环构件的腔室盖组件，该隔离器环构件具有倾斜表面，用于在晶片处理期间确认处理室的处理区域内的等离子体。 一种用于在晶片上形成CVD层的方法，包括升高基座，直到基座的上基座表面延伸到隔离器环构件的下边缘的上方。

公开(公告)号：US20050194100A1

公开(公告)日：2005-09-08

申请号：US11120456

申请日：2005-05-03

申请人： David Or ,  Keith Koai ,  Hiroyuki Takahama ,  Takahiro Ito ,  Koji Ota ,  Hiroshi Sato

发明人： David Or ,  Keith Koai ,  Hiroyuki Takahama ,  Takahiro Ito ,  Koji Ota ,  Hiroshi Sato

IPC分类号： C23C16/44 ,  C23C16/458 ,  H01L21/687 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01L21/68742 ,  C23C16/4401 ,  C23C16/4583

摘要： A substrate support is provided that features a lift pin having at least one larger diameter shoulder section that forms a relief region between the lift pin and a guide hole disposed through a substrate support. The shoulder section minimizes contact between the substrate support and lift pin guide hole, thereby reducing pin scratching, particle generation, component wear, and increasing the useful life of the pin. In another embodiment, a flat-bottom tip is provided to promote self-standing of the lift pin, reducing pin tilting or leaning of the lift pin within the guide hole.

公开(公告)号：US6050506A

公开(公告)日：2000-04-18

申请号：US23437

申请日：1998-02-13

申请人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

发明人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

IPC分类号： C23C16/44 ,  C23C16/455 ,  B05B1/14

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of metals. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduce flow impedance is particularly useful for CVD of copper.

摘要翻译： 用于在化学气相沉积（CVD）中分散气体在晶片上的喷头，特别是用于金属CVD。 孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。 这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下可以消除喷头表面背面的第二个穿孔板，从而减少液体夹带气体的流动阻抗和所需的压力 ，其倾向于在较高压力下沉积。 减少流阻抗对于铜的CVD特别有用。

公开(公告)号：US20060240542A1

公开(公告)日：2006-10-26

申请号：US11426555

申请日：2006-06-26

申请人： Eric Schieve ,  Keith Koai ,  David Or ,  Rene Correa

发明人： Eric Schieve ,  Keith Koai ,  David Or ,  Rene Correa

IPC分类号： C12M1/34

CPC分类号： H01L21/68742 ,  C23C16/4582 ,  H01L21/68785

摘要： An apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a yoke comprising a curved surface with a first slot formed therethrough, a base comprising a first surface adapted to support the substrate support and a curved second surface, wherein the curved second surface mates with the curved surface of the yoke and a first slot is formed through the curved second surface of the base, and a first threaded member disposed through the first slot in the yoke and the first slot in the base.

摘要翻译： 提供了一种用于将衬底支撑件定位在处理室内的装置。 在一个实施例中，一种用于定位衬底支撑件的装置包括轭，该轭包括具有穿过其形成的第一槽的弯曲表面，基部包括适于支撑衬底支撑件的第一表面和弯曲的第二表面，其中弯曲的第二表面与 轭的弯曲表面和第一槽形成为穿过基座的弯曲的第二表面，并且第一螺纹构件设置成穿过轭的第一槽和基座中的第一槽。

公开(公告)号：US06410089B1

公开(公告)日：2002-06-25

申请号：US09513723

申请日：2000-02-24

申请人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

发明人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

IPC分类号： C23C1680

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of copper in a thermal process using a precursor such as HFAC-Cu-TMVS. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduced flow impedance is particularly useful for CVD of copper.

摘要翻译： 用于在化学气相沉积（CVD）中在晶片上分配气体的喷头，特别是使用诸如HFAC-Cu-TMVS的前体的热处理中的CVD CVD。 孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。 这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下，可以消除喷头表面背面的第二多孔板，从而减少液体夹带气体的流动阻抗和所需的压力 ，其倾向于在较高压力下沉积。 减小的流阻抗对于铜的CVD是特别有用的。