公开(公告)号：US06121163A

公开(公告)日：2000-09-19

申请号：US599270

申请日：1996-02-09

申请人： Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma ,  Mohan K. Bhan ,  Sudhakar Subrahmanyam

发明人： Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma ,  Mohan K. Bhan ,  Sudhakar Subrahmanyam

IPC分类号： C30B29/18 ,  C23C16/40 ,  C23C16/50 ,  H01L21/205 ,  H01L21/316 ,  H05H1/24

CPC分类号： H01J37/32082 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/31629

摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

摘要翻译： 一种用于在界面处沉积具有改进的膜质量的层的方法和装置。 该方法包括以下步骤：将惰性气体引入处理室并通过以选定的增加的速率向腔室施加RF功率从惰性气体形成等离子体。 在RF功率达到全功率之后，引入包括反应气体的处理气体以沉积该层。 在优选的实施方案中，反应气体是四乙氧基硅烷。 在另一优选实施方案中，工艺气体还包括氟。

公开(公告)号：US6050506A

公开(公告)日：2000-04-18

申请号：US23437

申请日：1998-02-13

申请人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

发明人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

IPC分类号： C23C16/44 ,  C23C16/455 ,  B05B1/14

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of metals. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduce flow impedance is particularly useful for CVD of copper.

摘要翻译： 用于在化学气相沉积（CVD）中分散气体在晶片上的喷头，特别是用于金属CVD。 孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。 这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下可以消除喷头表面背面的第二个穿孔板，从而减少液体夹带气体的流动阻抗和所需的压力 ，其倾向于在较高压力下沉积。 减少流阻抗对于铜的CVD特别有用。

公开(公告)号：US06319728B1

公开(公告)日：2001-11-20

申请号：US09092477

申请日：1998-06-05

申请人： Mohan K. Bhan ,  Ling Chen ,  Bo Zheng ,  Justin Jones ,  Seshadri Ganguli ,  Timothy Levine ,  Samuel Wilson ,  Mei Chang

发明人： Mohan K. Bhan ,  Ling Chen ,  Bo Zheng ,  Justin Jones ,  Seshadri Ganguli ,  Timothy Levine ,  Samuel Wilson ,  Mei Chang

IPC分类号： H01L2144

CPC分类号： H01L21/76862 ,  C23C16/18 ,  C23C16/56 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76876 ,  H01L21/76886

摘要： A method for reducing the resistivity of a copper layer on a wafer. A moisture containing seed layer of copper is formed over a layer of material on a wafer. The copper seed layer is treated by either heat or ions from a plasma to anneal out moisture thereby reducing its resistivity and improving its adhesion to the underlying layer. A moisture free copper layer is then deposited on top of the “clean” or treated copper seed layer.

摘要翻译： 一种降低晶片上铜层电阻率的方法。 在晶片上的一层材料上形成含水分的铜种籽层。 铜种子层通过来自等离子体的热或离子来处理以退出水分，从而降低其电阻率并改善其与下层的粘附性。 然后将无水分的铜层沉积在“干净”或处理的铜籽晶层的顶部。

公开(公告)号：US06410089B1

公开(公告)日：2002-06-25

申请号：US09513723

申请日：2000-02-24

申请人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

发明人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

IPC分类号： C23C1680

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of copper in a thermal process using a precursor such as HFAC-Cu-TMVS. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduced flow impedance is particularly useful for CVD of copper.

摘要翻译： 用于在化学气相沉积（CVD）中在晶片上分配气体的喷头，特别是使用诸如HFAC-Cu-TMVS的前体的热处理中的CVD CVD。 孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。 这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下，可以消除喷头表面背面的第二多孔板，从而减少液体夹带气体的流动阻抗和所需的压力 ，其倾向于在较高压力下沉积。 减小的流阻抗对于铜的CVD是特别有用的。

公开(公告)号：US06291028B1

公开(公告)日：2001-09-18

申请号：US09608786

申请日：2000-06-30

申请人： Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma ,  Mohan K. Bhan ,  Sudhakar Subrahmanyam

发明人： Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma ,  Mohan K. Bhan ,  Sudhakar Subrahmanyam

IPC分类号： C23C16505

CPC分类号： H01J37/32082 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/31629

摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

摘要翻译： 一种用于在界面处沉积具有改进的膜质量的层的方法和装置。 该方法包括以下步骤：将惰性气体引入处理室并通过以选定的增加的速率向腔室施加RF功率从惰性气体形成等离子体。 在RF功率达到全功率之后，引入包括反应气体的处理气体以沉积该层。 在优选的实施方案中，反应气体是四乙氧基硅烷。 在另一优选实施方案中，工艺气体还包括氟。

公开(公告)号：US06289843B1

公开(公告)日：2001-09-18

申请号：US09643320

申请日：2000-08-21

申请人： Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma ,  Mohan K. Bhan ,  Sudhakar Subrahmanyam

发明人： Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma ,  Mohan K. Bhan ,  Sudhakar Subrahmanyam

IPC分类号： C23C1600

CPC分类号： H01J37/32082 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/31629

摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

公开(公告)号：US06573181B1

公开(公告)日：2003-06-03

申请号：US09698820

申请日：2000-10-26

申请人： Ramanujapuram A. Srinivas ,  Mohan K. Bhan ,  Jennifer Kopp

发明人： Ramanujapuram A. Srinivas ,  Mohan K. Bhan ,  Jennifer Kopp

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/02046 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/76814 ,  H01L21/76855 ,  H01L21/76856 ,  Y10S438/963

摘要： A method of forming a contact in an integrated circuit including forming a dielectric layer over a silicon substrate, etching a contact hole through the dielectric layer, exposing the etched contact hole to a plasma formed from a preclean gas comprising nitrogen trifluoride and helium and, thereafter, depositing a titanium layer within the contact hole by a plasma CVD process, where the plasma CVD process heats the substrate to a temperature less than or equal to 650° C.

摘要翻译： 一种在集成电路中形成接触的方法，包括在硅衬底上形成电介质层，蚀刻通过电介质层的接触孔，将蚀刻的接触孔暴露于由包含三氟化氮和氦的预清洁气体形成的等离子体，之后 ，通过等离子体CVD工艺在接触孔中沉积钛层，其中等离子体CVD工艺将衬底加热至低于或等于650℃的温度。