摘要:
A meter module includes a meter panel in which meters and indication lamps are mounted, a centralized control circuit board in which control circuits for car electric devices including the meters and indication lamps are installed, an electric junction box for distribution of power, input and output signals and for integration of earth lines, and a module case. The electric junction box is formed by setting a bus-bar circuit board and an insulator cover in the module case. The centralized control circuit board and the meter panel are fixed over the electric junction box, whereby the meter panel, the centralized control circuit board and the electric junction box are intensively incorporated. The above arrangement simplifies electric wiring in the instrument panel portion of car and facilitates assembling of the electric devices such as the meter panel. A wiring harness protector includes a protector main body for protecting a wiring harness therein and a cover. A plurality of through holes are concentrated in the cover, and a plurality of connectors in the wiring harness set in the protector main body are set through the corresponding through holes in a direction perpendicular to the wiring harness extending direction. The connectors are fixed through a connector stopper to form a multipolar connector. The wiring harness protector simplifies the wiring harness, especially the wiring arrangement of instrument panel harness, and facilitates setting and assembling of wiring harness.
摘要:
A meter module includes a meter panel in which meters and indication lamps are mounted, a centralized control circuit board in which control circuits for a vehicle's electrical devices (including meters and indication lamps) are installed, an electric junction box for distribution of power, input and output signals and for integration of earth lines, and a module case. The electric junction box is formed by setting a bus-bar circuit board and an insulator cover in the module case. The electric junction box is formed by setting a bus-bar circuit board and an insulator cover in the module case. The centralized control circuit board and the meter panel are fixed over the electric junction box, whereby the meter panel, the centralized control circuit board and the electric junction box are intensively incorporated. Thus, the electric wiring in the instrument panel portion of the vehicle is simplified and this facilitates setting and assembling of the electric devices such as the meter panel. Furthermore, a wiring harness protector includes a protector main body for protecting a wiring harness therein and a cover. A plurality of through holes are concentrated in the cover, and a plurality of connectors in the wiring harness set in the protector main body are set through the corresponding through holes in a direction perpendicular to the wiring harness extending direction. The connectors are fixed through a connector stopper to form a multipolar connector. The wiring harness protector simplifies the wiring harness, especially the wiring arrangement of instrument panel wiring harness, and facilitates setting and assembling of the wiring harness.
摘要:
An instrument panel with meters/indicating lamps and their drive circuits implemented therein, a centralized control circuit board provided with control circuits for vehicle-mounted electric equipment including the meters/indicating lamps, and an electric junction box for distributing power sources and input/output signals for the vehicle-mounted electric equipment and for integrating ground wires, are gathered and integrally united. Electric wiring and installation of electric instruments such as an instrument panel in the dashboard portion of an automobile are facilitated.
摘要:
A meter module assembly includes a combination meter panel implemented with meters/indicating lamps and a drive circuit thereof, an electric junction box integrating functional circuits to distribute and control power sources and input/output signals for vehicle-mounted electric equipment including the meters/indicating lamps, and a switch unit integrating switches for vehicle-mounted electric equipment. The combination meter panel, the electric junction box, and the switch unit are integrally united. The electric junction box is integrally combined with the switch unit at the rear surface of the unit being arranged side by side with the combination meter panel. The electric junction box is electrically connected with the combination meter panel by a flexible circuit board.
摘要:
Disclosed is an electric connection box integral with an ignition switch to be incorporated into an instrument panel in an automobile. The electric connection box, which is to be disposed in an instrument panel, includes in its internal circuit protect parts such as a fuse and the like and a branch circuit (a bus bar circuit) having circuits respectively to be connected directly with an ignition circuit, thereby connecting the ignition circuit directly with the branch circuit, whereby an ignition switch and the circuit protect parts are integrated into the electric connection box.
摘要:
An electric junction box installed in an automotive instrument panel incorporates the meter board and its associated switch circuits as the internal circuit of the box. The electric junction box has an internal busbar circuit having branches that are directly connected to the meter board and the switch circuits so that they form an integral part of the internal circuit of the junction box.
摘要:
A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element.
摘要:
A semiconductor device includes: a semiconductor substrate with a principal plane; a base region disposed on the principal plane; a source region disposed on the principal plane in the base region to be shallower than the base region; a drain region disposed on the principal plane, and spaced to the base region; a trench disposed on the principal plane; a trench gate electrode disposed in the trench through a trench gate insulation film; a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film; and an impurity diffusion region having high concentration of impurities and disposed in a portion of the base region to be a channel region facing the planer gate electrode.
摘要:
A wire (12) is formed on an insulating film (10) on a semiconductor substrate (1). The wire (12) is covered by silicon nitride film (14), inorganic SOG film (20) and TEOS film (21). A thin film resistance element (30) of chromium silicon (CrSi) is formed on the upper surface of the TEOS film (21). The acute angle (taper angle) at which a line connecting the local maximum and minimum points of a step on the upper surface of the TEOS film (21) beneath the area where the thin film resistance element (30) is formed intersects to the surface of the substrate (1) is set to 10° or less.
摘要:
A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.