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    Charged particle beam exposure method and apparatus
    1.
    发明授权
    Charged particle beam exposure method and apparatus 失效
    带电粒子束曝光方法和装置

    公开(公告)号：US5892237A

    公开(公告)日：1999-04-06

    申请号：US815436

    申请日：1997-03-11

    申请人： Kenichi Kawakami ,  Hiroshi Yasuda ,  Akio Yamada ,  Tatsuro Ohkawa ,  Mitsuhiro Nakano ,  Atsushi Saito ,  Yoshihisa Ooae

    发明人： Kenichi Kawakami ,  Hiroshi Yasuda ,  Akio Yamada ,  Tatsuro Ohkawa ,  Mitsuhiro Nakano ,  Atsushi Saito ,  Yoshihisa Ooae

    IPC分类号： H01J37/304 ,  H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174

    摘要： In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.

    摘要翻译： 在带电粒子束曝光方法及其装置中，其中用于照射的带电粒子束的强度增加到最大以提高曝光程序的通过量，因此，诸如晶片的样品的温度， 升高并发生热膨胀。 发生的热膨胀基于投射的带电粒子束的强度具有再现性。 因此，通过监视投射的带电粒子束的强度来检测热膨胀系数。 将从热膨胀获取的每个照射位置的移动距离作为用于带电粒子束偏转的补偿值被添加，以提供准确的曝光程序。

    Charged particle beam exposure apparatus
    5.
    发明授权
    Charged particle beam exposure apparatus 失效
    带电粒子束曝光装置

    公开(公告)号：US5966200A

    公开(公告)日：1999-10-12

    申请号：US948478

    申请日：1997-10-10

    申请人： Kenichi Kawakami ,  Tatsuro Ohkawa ,  Kazushi Ishida ,  Akiyoshi Tsuda

    发明人： Kenichi Kawakami ,  Tatsuro Ohkawa ,  Kazushi Ishida ,  Akiyoshi Tsuda

    IPC分类号： H01L21/027 ,  G03F7/20 ,  H01J37/304 ,  H01L21/68 ,  G03B27/42 ,  G01B11/00 ,  G01N21/00

    CPC分类号： G03F7/70716 ,  H01J37/3045 ,  H01L21/681 ,  H01J2237/3175

    摘要： The present invention is a charged particle beam exposure apparatus comprising: a column portion in which an optical system for a charged particle beam is disposed; a chamber to be coupled with the column portion; a movable sample stage located in the chamber for mounting a sample thereon; and a stage position measurement device, having an optical path for measurement, along which a laser beam having a predetermined frequency is projected and is reflected by reflection means provided on the sample stage, and an optical path for reference, which in length almost equals a distance between a starting point of the optical path for measurement and the origin of the optical system in the column portion and for which the length is increased at a rate substantially consistent with a thermal expansion coefficient as material of the chamber is expanded, for measuring a change in position of the sample stage by employing a laser optical signal for measurement, which passes along the optical path for measurement, and a reference laser signal, which passes along the optical path for reference.

    摘要翻译： 本发明是一种带电粒子束曝光装置，包括：列部分，其中设置带电粒子束的光学系统; 与柱部分联接的室; 位于所述室中的可移动的样品台，用于在其上安装样品; 以及台架位置测量装置，具有用于测量的光路，具有预定频率的激光束沿着该光路投射并被设置在样品台上的反射装置反射，以及用于参考的光路，其长度几乎等于 用于测量的光路的起始点和柱部分中的光学系统的原点之间的距离和长度以与作为材料的材料的热膨胀系数基本一致的速率增加的距离被扩大，用于测量 通过采用通过用于测量的光路的测量用的激光光信号和沿光路通过的参考激光信号来改变样品台的位置。

    Method of detecting a deficiency in a charged-particle-beam exposure mask
    6.
    发明授权
    Method of detecting a deficiency in a charged-particle-beam exposure mask 失效
    检测带电粒子束曝光掩模缺陷的方法

    公开(公告)号：US5830612A

    公开(公告)日：1998-11-03

    申请号：US711935

    申请日：1996-09-11

    申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    IPC分类号： G03F1/00 ,  G03F1/20 ,  H01J37/304 ,  H01J37/317 ,  G03F9/00 ,  G03C5/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  G03F1/20 ,  H01J2237/2817 ,  H01J2237/31794

    摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

    摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

    Charged particle-beam exposure device and charged-particle-beam exposure method
    7.
    发明授权
    Charged particle-beam exposure device and charged-particle-beam exposure method 失效
    带电粒子束曝光装置和带电粒子束曝光方法

    公开(公告)号：US6137111A

    公开(公告)日：2000-10-24

    申请号：US84952

    申请日：1998-05-28

    申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    IPC分类号： G03F1/00 ,  G03F1/20 ,  H01J37/304 ,  H01J37/317 ,  G03F9/00 ,  H01J37/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  G03F1/20 ,  H01J2237/2817 ,  H01J2237/31794

    摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

    摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

    Charged-particle-beam exposure device and charged-particle-beam exposure method
    8.
    发明授权
    Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
    带电粒子束曝光装置和带电粒子束曝光方法

    公开(公告)号：US06222195B1

    公开(公告)日：2001-04-24

    申请号：US09637119

    申请日：2000-08-11

    申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    IPC分类号： G03F900

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/2817 ,  H01J2237/31794

    摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

    摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在使带电粒子束通过相同的孔之后，在包含与物体基本上在与物体相同的高度的表面上的标记的区域上扫描带电粒子束; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

    Method and apparatus for charged particle beam exposure
    9.
    发明授权
    Method and apparatus for charged particle beam exposure 失效
    带电粒子束曝光的方法和装置

    公开(公告)号：US6015975A

    公开(公告)日：2000-01-18

    申请号：US956437

    申请日：1997-10-23

    申请人： Kenichi Kawakami ,  Masahiko Susa ,  Kobayashi Katsuhiko ,  Akio Yamada ,  Koichi Yamashita ,  Naoki Nishio

    发明人： Kenichi Kawakami ,  Masahiko Susa ,  Kobayashi Katsuhiko ,  Akio Yamada ,  Koichi Yamashita ,  Naoki Nishio

    IPC分类号： H01J37/20 ,  G03F7/20 ,  H01J37/147 ,  H01J37/302 ,  H01L21/027

    CPC分类号： H01J37/3023 ,  G03F7/2065 ,  H01J2237/31766

    摘要： The present invention is a method of charged particle beam exposure wherein an area of an exposure pattern is exposed by irradiating a sample with a charged particle beam while moving said sample, comprising: a step of generating speed data including the speed distribution in a direction of movement of the sample in accordance with secondary data which is generated from a pattern data including at least data of the exposure pattern and data of an exposure position, and includes at least density information of the exposure pattern; and a step of irradiating the sample with the charged particle beam in accordance with the pattern data while being moved at variable speed in accordance with the speed data. According to the invention, the through-put is improved very much without any defect of the exposure.

    摘要翻译： 本发明是一种带电粒子束曝光的方法，其中通过在移动所述样品的同时照射具有带电粒子束的样品来暴露曝光图案的区域，包括：产生速度数据的步骤，所述速度数据包括沿着 根据从包括曝光图案的数据和曝光位置的数据的图案数据生成的二次数据，移动样品，并且至少包括曝光图案的浓度信息; 以及根据速度数据以可变速度移动时，根据图案数据用带电粒子束照射样品的步骤。 根据本发明，透气性得到改善，没有任何曝光缺陷。

    Differential amplifier
    10.
    发明授权
    Differential amplifier 有权
    差分放大器

    公开(公告)号：US08384480B2

    公开(公告)日：2013-02-26

    申请号：US13244467

    申请日：2011-09-24

    申请人： Michimasa Yamaguchi ,  Kenichi Kawakami

    发明人： Michimasa Yamaguchi ,  Kenichi Kawakami

    IPC分类号： H03F3/45

    CPC分类号： H03F3/45179 ,  H03F2203/45318 ,  H03F2203/45394 ,  H03F2203/45396

    摘要： A differential amplifier includes first and second current paths, each connected between first and second power supplies (PS) and respectively outputting first and second differential output signals. The first current path includes: first transistor, selectively interconnected between the first PS and a first output terminal, its gate receiving one differential input signal; second transistor, connected between the second PS and the first output terminal, its gate receiving the other differential input signal; and first switch circuit. The second current path includes: third transistor, selectively interconnected between the second PS and a second output terminal, its gate receiving one differential input signal; fourth transistor, connected between the first PS and the second output terminal, its gate receiving the other differential input signal; and second switch circuit. One of the first and second switch circuits is connected to the first PS and the other is connected to the second PS.

    摘要翻译： 差分放大器包括第一和第二电流路径，每个电流路径连接在第一和第二电源（PS）之间，并分别输出第一和第二差分输出信号。 第一电流路径包括：第一晶体管，选择性地互连在第一PS和第一输出端之间，其栅极接收一个差分输入信号; 第二晶体管，连接在第二PS和第一输出端之间，其栅极接收另一个差分输入信号; 和第一开关电路。 第二电流路径包括：第三晶体管，选择性地互连在第二PS和第二输出端之间，其栅极接收一个差分输入信号; 第四晶体管，连接在第一PS和第二输出端之间，其栅极接收另一个差分输入信号; 和第二开关电路。 第一和第二开关电路中的一个连接到第一PS，另一个连接到第二PS。